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Skyworks Solutions Inc SI8947BD-IS4 POWER ISOLATION
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DigiKey	SI8947BD-IS4	Tube	1,355		1	1 $6.42 10 $5.769 100 $6.42 1000 $4.02384 10000 $3.22392	Buy Now
Skyworks Solutions Inc SI8946BD-IS4R POWER ISOLATION
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DigiKey	SI8946BD-IS4R	Cut Tape	1,250		1	1 $7.52 10 $5.137 100 $3.832 1000 $3.29386 10000 $3.29386	Buy Now
	SI8946BD-IS4R	Reel	1,250		1,250	1 - 10 - 100 - 1000 - 10000 $3.22392	Buy Now
	SI8946BD-IS4R	Digi-Reel	1,250		1	1 $6.42 10 $5.769 100 $4.7268 1000 $4.02384 10000 $4.02384	Buy Now
Richardson RFPD	SI8946BD-IS4R				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Skyworks Solutions Inc SI8931D-IS4R POWER ISOLATION
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DigiKey	SI8931D-IS4R	Cut Tape	1,112		1	1 $8.08 10 $5.548 100 $4.1592 1000 $3.58684 10000 $3.58684	Buy Now
Skyworks Solutions Inc SI8922BB-IS ISOLATED ANALOG AMPLIFIER
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DigiKey	SI8922BB-IS	Tube	345		1	1 $7.23 10 $4.929 100 $7.23 1000 $3.11057 10000 $2.85	Buy Now
Mouser Electronics	SI8922BB-IS		110			1 $6.3 10 $4.93 100 $3.42 1000 $3.11 10000 $2.85	Buy Now
Skyworks Solutions Inc SI8922BD-IS4 POWER ISOLATION
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DigiKey	SI8922BD-IS4	Tube	305		1	1 $7.52 10 $5.137 100 $7.52 1000 $3.264 10000 $3	Buy Now

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SI89 Datasheets (144)

Part	Manufacturer	Description	Datasheet Type	PDF
SI8900B-A01-GS	Silicon Laboratories	Data Acquisition - Analog to Digital Converters (ADC), Integrated Circuits (ICs), IC ADC 10BIT SRL/UART SOIC	Original	PDF
SI8900B-A01-GSR	Silicon Laboratories	Data Acquisition - Analog to Digital Converters (ADC), Integrated Circuits (ICs), IC ADC 10BIT SRL/UART SOIC	Original	PDF
SI8900D-A01-GS	Silicon Laboratories	Data Acquisition - Analog to Digital Converters (ADC), Integrated Circuits (ICs), IC ADC 10BIT SRL/UART SOIC	Original	PDF
SI8900D-A01-GSR	Silicon Laboratories	Data Acquisition - Analog to Digital Converters (ADC), Integrated Circuits (ICs), IC ADC 10BIT SRL/UART SOIC	Original	PDF
Si8900EDB	Vishay Intertechnology	Bi-Directional N-Channel 20-V (D-S) MOSFET	Original	PDF
SI8900EDB	Vishay Siliconix	MOSFETs	Original	PDF
Si8900EDB	Vishay Telefunken	Bi-directional N-channel 20-v (d-s) Mosfet	Original	PDF
SI8900EDB-T2-E1	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 5.4A 10-MFP	Original	PDF
SI-8900L	Sanken Electric	Separate Excitation Switching Type with Transformer	Original	PDF
SI8901A	Siliconix	DMOS Double Balanced Mixers	Scan	PDF
SI8901B-A01-GS	Silicon Laboratories	Data Acquisition - Analog to Digital Converters (ADC), Integrated Circuits (ICs), IC ADC 10BIT I2C/SRL SOIC	Original	PDF
SI8901B-A01-GSR	Silicon Laboratories	Data Acquisition - Analog to Digital Converters (ADC), Integrated Circuits (ICs), IC ADC 10BIT I2C/SRL SOIC	Original	PDF
SI8901B-A02-GS	Silicon Laboratories	IC ADC 10BIT SAR 16SOIC	Original	PDF
SI8901B-A02-GSR	Silicon Laboratories	IC ADC 10BIT SAR 16SOIC	Original	PDF

SI8901CY	Siliconix	DMOS Double Balanced Mixers	Scan	PDF
SI8901D-A01-GS	Silicon Laboratories	Data Acquisition - Analog to Digital Converters (ADC), Integrated Circuits (ICs), IC ADC 10BIT I2C/SRL SOIC	Original	PDF
SI8901D-A01-GSR	Silicon Laboratories	Data Acquisition - Analog to Digital Converters (ADC), Integrated Circuits (ICs), IC ADC 10BIT I2C/SRL SOIC	Original	PDF
SI8901D-A02-GS	Silicon Laboratories	IC ADC 10BIT I2C/SRL SOIC	Original	PDF
SI8901D-A02-GSR	Silicon Laboratories	IC ADC 10BIT I2C/SRL SOIC	Original	PDF
SI8901EDB	Vishay Siliconix	MOSFETs	Original	PDF

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SI89 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
8900E Abstract: J-STD-020A Si8900EDB sn 4060 Text: Si8900EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 20 7 0.026 @ VGS = 3.7 V 6.8 0.034 @ VGS = 2.5 V 5.0 0.040 @ VGS = 1.8 V 5.5 Bump Side View S2 7 6 IS1S2 (A) 0.024 @ VGS = 4.5 V	Original	Si8900EDB S-21474--Rev. 26-Aug-02 8900E J-STD-020A sn 4060	PDF
10-SPROCKET Abstract: No abstract text available Text: Tape Information Vishay Siliconix MICRO FOOTr 5x2: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Si8900EDB-T2 4.000.10 4.000.10 +0.10 1.50 -0.00 A 2.000.05 B 1.75  0.10 B 5.50  0.05 12.0 +0.30 -0.10 SECTION A-A A SECTION B-B NOTES: 1. 10-sprocket hole pitch cumulative tolerance 0.2.	Original	275-mm Si8900EDB-T2 10-sprocket 93-5211-x) 92-5210-x) T-04476--Rev. 30-Aug-04	PDF
Si8904EDB Abstract: No abstract text available Text: Si8904EDB Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 30 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 4.9 0.060 at VGS = 2.5 V 4.2 • TrenchFET Power MOSFET • Ultra-Low RSS(on) and 22.5 mΩ Maximum Effective On-Resistance	Original	Si8904EDB 8904E 18-Jul-08	PDF
c 5706 Abstract: AN609 Si8900EDB Text: Si8900EDB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si8900EDB AN609 08-Aug-07 c 5706	PDF
Si8902EDB-T2-E1 Abstract: Si8902EDB t2 955 e S8304 Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21	Original	Si8902EDB 18-Jul-08 Si8902EDB-T2-E1 t2 955 e S8304	PDF
SI8407DB Abstract: 8902E Si8902EDB Text: Device Orientation—MICRO FOOTr Packages Vishay Siliconix Device Orientation Options for MOSFETs Part Numbers: Si8407DB Si8902EDB MICRO FOOTr 2X3: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Part Number Method Si8407DB T2 Si8902EDB T2 Device on Tape Orientation 8902E	Original	Si8407DB Si8902EDB 275-mm 8902E 8902E	PDF
7009 A 8290 Abstract: SI8901 AN609 Si8901EDB Text: Si8901EDB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si8901EDB AN609 08-Aug-07 7009 A 8290 SI8901	PDF
8902E Abstract: J-STD-020A Si8902EDB Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET	Original	Si8902EDB 8902E 08-Apr-05 8902E J-STD-020A	PDF
Untitled Abstract: No abstract text available Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21	Original	Si8902EDB 8902E 8902E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Si8900EDB Abstract: No abstract text available Text: Tape Information Vishay Siliconix MICRO FOOTr 5x2: 0.8−mm PITCH, 0.275−mm BUMP HEIGHT Si8900EDB−T2 4.00"0.10 4.00"0.10 +0.10 O1.50 - 0.00 A 2.00"0.05 0.279"0.02 B BO B 1.75 " 0.10 5.50 " 0.05 12.0 +0.30 - 0.10 5_ MAX SECTION A-A A 5_ MAX AO KO SECTION B-B	Original	275-mm Si8900EDB-T2 10-sprocket 93-5211-x) 92-5210-x) T-02077--Rev. 13-May-02 93-5224-x Si8900EDB	PDF
Untitled Abstract: No abstract text available Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET	Original	Si8902EDB 8902E 8902E 63Sn/37Pb S-40861--Rev. 03-May-04	PDF
SI8901EDB Abstract: No abstract text available Text: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) IS1S2 (A) 0.060 @ VGS = −4.5 V −4.4 −20 0.080 @ VGS = −2.5 V −3.9 0.105 @ VGS = −1.8 V −3.4 TrenchFETr Power MOSFET	Original	Si8901EDB 8901E 8901E Si8901EDB-T2Note 63Sn/37Pb S-40852--Rev. 03-May-04	PDF
Untitled Abstract: No abstract text available Text: Si8902EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VSS (V) 20 rSS(on) (W) ISS (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET	Original	Si8902EDB 8902E 8902E 63Sn/37Pb S-20616--Rev. 13-May-02	PDF
si8900 Abstract: AN-635 Text: Si8900/1/2 I SOLA TED M ONITORING ADC Features   ADC 3  input channels 10-bit resolution 2 µs conversion time  Isolated serial I/O port  UART I  2 Si8900 C/SMbus (Si8901) MHz SPI port (Si8902)  2.5	Original	Si8900/1/2 10-bit Si8900) Si8901) Si8902) 60-year UL1577 si8900 AN-635	PDF

Untitled Abstract: No abstract text available Text: Tape Information Vishay Siliconix MICRO FOOT 2 x 3: 0.8 mm PITCH, 0.275 mm BUMP HEIGHT Si8407DB-T2, Si8902EDB-T2 4.00 0.10 4.00 0.10 + 0.10 Ø 1.50 - 0.00 A 2.00 0.05 B 1.75 0.10 B 5.50 0.05 12.0 + 0.30 - 0.10 SECTION A-A A SECTION B-B Notes 1. 10 sprocket hole pitch cumulative tolerance ± 0.2.	Original	Si8407DB-T2 Si8902EDB-T2 93-5211-X) 92-5210-X) C10-0948-Rev. 11-Oct-10 93-5223-X 11-Oct-10	PDF
Untitled Abstract: No abstract text available Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21	Original	Si8902EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET	Original	Si8901EDB 8901E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET	Original	Si8901EDB 8901E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: Si8902AEDB www.vishay.com Vishay Siliconix N-Channel 24 V D-S MOSFET FEATURES PRODUCT SUMMARY 24 • TrenchFET power MOSFET RS1S2 (Ω) Max. IS1S2 (A) a 0.028 at VGS = 4.5 V 5.9 • Small 2.4 mm x 1.6 mm outline 0.029 at VGS = 3.7 V 5.8 • Thin 0.6 mm max. height	Original	Si8902AEDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
J-STD-020A Abstract: Si8902EDB Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET	Original	Si8902EDB 8902E S-50066--Rev. 17-Jan-05 J-STD-020A	PDF
Si8902EDB Abstract: J-STD-020A Text: Si8902EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET	Original	Si8902EDB 8902E 63Sn/37Pb S-20802--Rev. 01-Jul-02 J-STD-020A	PDF
Untitled Abstract: No abstract text available Text: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET	Original	Si8901EDB 8901E Si8901EDB-T2-E1 11-Mar-11	PDF
SI8901 Abstract: J-STD-020A Si8901EDB Text: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) IS1S2 (A) 0.060 @ VGS = −4.5 V −4.4 −20 0.080 @ VGS = −2.5 V −3.9 0.105 @ VGS = −1.8 V −3.4 TrenchFETr Power MOSFET	Original	Si8901EDB 8901E S-50066--Rev. 17-Jan-05 SI8901 J-STD-020A	PDF
J-STD-020A Abstract: Si8904EDB Text: Si8904EDB Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 30 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 4.9 0.060 @ VGS = 2.5 V 4.2 TrenchFETr Power MOSFET Ultra-Low rSS(on) and 22.5-mW Maximum Effective On-Resistance	Original	Si8904EDB 8904E P/N340 S-50066--Rev. 17-Jan-05 J-STD-020A	PDF

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SI89 Datasheets (144)

SI89 Datasheets Context Search

8900E

10-SPROCKET

Si8904EDB

c 5706

Si8902EDB-T2-E1

SI8407DB

7009 A 8290

8902E

Untitled

Si8900EDB

Untitled

SI8901EDB

Untitled

si8900

Untitled

Untitled

Untitled

Untitled

Untitled

J-STD-020A

Si8902EDB

Untitled

SI8901

J-STD-020A