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Skyworks Solutions Inc SI8902D-A01-GS IC ADC 10BIT SAR 16SOIC
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Skyworks Solutions Inc SI8902B-A01-GS IC ADC 10BIT SAR 16SOIC
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Skyworks Solutions Inc SI8902B-A01-GSR IC ADC 10BIT SAR 16SOIC
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Skyworks Solutions Inc SI8902D-A01-GSR IC ADC 10BIT SAR 16SOIC
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Vishay Siliconix SI8902EDB-T2-E1 MOSFET 2N-CH 20V 3.9A 6MICROFOOT
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SI8902 Datasheets (9)

Part	Manufacturer	Description	Datasheet Type	PDF
SI8902AEDB-T2-E1	Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - N-CHANNEL 24-V (D-S) MOSFET	Original	PDF
SI8902B-A01-GS	Silicon Laboratories	Data Acquisition - Analog to Digital Converters (ADC), Integrated Circuits (ICs), IC ADC 10BIT SPI/SRL SOIC	Original	PDF
SI8902B-A01-GSR	Silicon Laboratories	Data Acquisition - Analog to Digital Converters (ADC), Integrated Circuits (ICs), IC ADC 10BIT SPI/SRL SOIC	Original	PDF
SI8902D-A01-GS	Silicon Laboratories	Data Acquisition - Analog to Digital Converters (ADC), Integrated Circuits (ICs), IC ADC 10BIT SPI/SRL SOIC	Original	PDF
SI8902D-A01-GSR	Silicon Laboratories	Data Acquisition - Analog to Digital Converters (ADC), Integrated Circuits (ICs), IC ADC 10BIT SPI/SRL SOIC	Original	PDF
SI8902EDB	Vishay Siliconix	Bi-Directional N-Channel 20-V (D-S) MOSFET	Original	PDF
SI8902EDB	Vishay Siliconix	MOSFETs	Original	PDF
SI8902EDB-T2-E1	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 3.9A 6-MFP	Original	PDF
SI-8902L	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF

SI8902 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Si8902EDB-T2-E1 Abstract: Si8902EDB t2 955 e S8304 Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21	Original	Si8902EDB 18-Jul-08 Si8902EDB-T2-E1 t2 955 e S8304	PDF
SI8407DB Abstract: 8902E Si8902EDB Text: Device Orientation—MICRO FOOTr Packages Vishay Siliconix Device Orientation Options for MOSFETs Part Numbers: Si8407DB Si8902EDB MICRO FOOTr 2X3: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Part Number Method Si8407DB T2 Si8902EDB T2 Device on Tape Orientation 8902E	Original	Si8407DB Si8902EDB 275-mm 8902E 8902E	PDF
8902E Abstract: J-STD-020A Si8902EDB Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET	Original	Si8902EDB 8902E 08-Apr-05 8902E J-STD-020A	PDF
Untitled Abstract: No abstract text available Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21	Original	Si8902EDB 8902E 8902E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET	Original	Si8902EDB 8902E 8902E 63Sn/37Pb S-40861--Rev. 03-May-04	PDF
Untitled Abstract: No abstract text available Text: Si8902EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VSS (V) 20 rSS(on) (W) ISS (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET	Original	Si8902EDB 8902E 8902E 63Sn/37Pb S-20616--Rev. 13-May-02	PDF
si8900 Abstract: AN-635 Text: Si8900/1/2 I SOLA TED M ONITORING ADC Features   ADC 3  input channels 10-bit resolution 2 µs conversion time  Isolated serial I/O port  UART I  2 Si8900 C/SMbus (Si8901) MHz SPI port (Si8902)  2.5	Original	Si8900/1/2 10-bit Si8900) Si8901) Si8902) 60-year UL1577 si8900 AN-635	PDF
Untitled Abstract: No abstract text available Text: Tape Information Vishay Siliconix MICRO FOOT 2 x 3: 0.8 mm PITCH, 0.275 mm BUMP HEIGHT Si8407DB-T2, Si8902EDB-T2 4.00 0.10 4.00 0.10 + 0.10 Ø 1.50 - 0.00 A 2.00 0.05 B 1.75 0.10 B 5.50 0.05 12.0 + 0.30 - 0.10 SECTION A-A A SECTION B-B Notes 1. 10 sprocket hole pitch cumulative tolerance ± 0.2.	Original	Si8407DB-T2 Si8902EDB-T2 93-5211-X) 92-5210-X) C10-0948-Rev. 11-Oct-10 93-5223-X 11-Oct-10	PDF
Untitled Abstract: No abstract text available Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21	Original	Si8902EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: Si8902AEDB www.vishay.com Vishay Siliconix N-Channel 24 V D-S MOSFET FEATURES PRODUCT SUMMARY 24 • TrenchFET power MOSFET RS1S2 (Ω) Max. IS1S2 (A) a 0.028 at VGS = 4.5 V 5.9 • Small 2.4 mm x 1.6 mm outline 0.029 at VGS = 3.7 V 5.8 • Thin 0.6 mm max. height	Original	Si8902AEDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
J-STD-020A Abstract: Si8902EDB Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET	Original	Si8902EDB 8902E S-50066--Rev. 17-Jan-05 J-STD-020A	PDF
Si8902EDB Abstract: J-STD-020A Text: Si8902EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET	Original	Si8902EDB 8902E 63Sn/37Pb S-20802--Rev. 01-Jul-02 J-STD-020A	PDF
7404 Abstract: 7404 not 7404 data sheet AN609 Si8902EDB Text: Si8902EDB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si8902EDB AN609 10-Aug-07 7404 7404 not 7404 data sheet	PDF
Untitled Abstract: No abstract text available Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21	Original	Si8902EDB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF

Untitled Abstract: No abstract text available Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21	Original	Si8902EDB 8902E 8902E 11-Mar-11	PDF
Si8407DB Abstract: Si8902EDB Text: Tape Information Vishay Siliconix MICRO FOOTr 2x3: 0.8−mm PITCH, 0.275−mm BUMP HEIGHT Si8407DB−T2, Si8902EDB−T2 4.00"0.10 4.00"0.10 +0.10 O1.50 - 0.00 A 2.00"0.05 0.279"0.02 B BO B 1.75 " 0.10 5.50 " 0.05 12.0 +0.30 - 0.10 5_ MAX SECTION A-A A 5_ MAX	Original	275-mm Si8407DB-T2 Si8902EDB-T2 10-sprocket 93-5211-x) 92-5210-x) S-31501--Rev. 14-Jul-03 Si8407DB Si8902EDB	PDF
Si8902EDB Abstract: No abstract text available Text: SPICE Device Model Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si8902EDB 18-Jul-08	PDF
Si8407DB-T2 Abstract: No abstract text available Text: Tape Information Vishay Siliconix MICRO FOOTr 2x3: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Si8407DB-T2, Si8902EDB-T2 4.00"0.10 4.00"0.10 +0.10 O1.50−0.00 A 2.00"0.05 B B 1.75 " 0.10 5.50 " 0.05 12.0 +0.30 −0.10 SECTION A-A A SECTION B-B NOTES: 1. 10 sprocket hole pitch cumulative tolerance "0.2 mm.	Original	275-mm Si8407DB-T2 Si8902EDB-T2 92-5210-x) S-40510--Rev. 17-May-04	PDF
SI8902 Abstract: SI8902D-A01-GS si8901 Text: Si8900/1/2 I SOLA TED M ONITORING ADC Features   ADC 3  input channels 10-bit resolution 2 µs conversion time  Isolated serial I/O port  UART I  2 Si8900 C/SMbus (Si8901) MHz SPI port (Si8902)  2.5	Original	Si8900/1/2 10-bit Si8900) Si8901) Si8902) 60-year UL1577 SI8902 SI8902D-A01-GS si8901	PDF
J-STD-020A Abstract: Si8902EDB Text: Si8902EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET	Original	Si8902EDB 8902E 63Sn/37Pb S-21337--Rev. 05-Aug-02 J-STD-020A	PDF
Untitled Abstract: No abstract text available Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • TrenchFET Power MOSFET	Original	Si8902EDB 8902E 8902E 18-Jul-08	PDF
G-263 Abstract: No abstract text available Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET	Original	Si8902EDB 8902E 8902E 63Sn/37Pb S-32415--Rev. 24-Nov-03 G-263	PDF
Untitled Abstract: No abstract text available Text: Si8902EDB Vishay Siliconix New Product Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET	Original	Si8902EDB 8902E 8902E 63Sn/37Pb S-31863--Rev. 15-Sep-03	PDF
Si8902EDB Abstract: Si8902EDB-T2-E1 Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21	Original	Si8902EDB 11-Mar-11 Si8902EDB-T2-E1	PDF

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SI8902 Datasheets (9)

SI8902 Datasheets Context Search

Si8902EDB-T2-E1

SI8407DB

8902E

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si8900

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J-STD-020A

Si8902EDB

7404

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Si8407DB

Si8902EDB

Si8407DB-T2

SI8902

J-STD-020A

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G-263

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Si8902EDB