SIC IGBT Search Results

SIC IGBT Result Highlights (5)

Part	Manufacturer	Description
MG800FXF1ZMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
MG250YD2YMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 2200 V, 250 A, 2-153A1A
GT30J110SRA	Toshiba Electronic Devices & Storage Corporation	IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N)
TW030Z120C	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET, 1200 V, 60 A, 0.041 Ω@18V, TO-247-4L(X)

SIC IGBT Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Application Note AN-10A: Driving SiC Junction Transistors SJT with Off-the-Shelf Silicon IGBT Gate Drivers: Single-Level Drive Concept Introduction GeneSiC Semiconductor is commercializing 1200 V and 1700 V SiC Junction Transistors (SJT) with current ratings ranging from 4 A to 16 A. SiC	Original	AN-10A: Oct-2011. Nov-2011. GA06JT12-247	PDF
SEMISOUTH Abstract: 1200v 30A to247 JFETs SiC jfets downhole ASJD1200R045 Text: ADVANCED INFORMATION Silicon Carbide SiC Schottky Diodes and JFETs Die Inside Why SiC for your Military, Aerospace SiC JFETs • 1200V & 1700V Breakdown Voltages and Down-hole Applications? • Extreme Performance • Operation Beyond Mil Temp - Elevated Temp Range (TJ), -55oC to +200oC	Original	-55oC 200oC 260oC* MIL-PRF-19500 O-257) O-257 SEMISOUTH 1200v 30A to247 JFETs SiC jfets downhole ASJD1200R045	PDF
SCS205KG Abstract: SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ Text: SiC Power Devices vol.3 The Industry's First Mass-Produced "Full SiC" Power Modules ROHM now oﬀers SiC power devices featuring a number of characteristics, including: high breakdown voltage, low power consumption, and high-speed switching operation not provided by conventional silicon devices.	Original	000A-class) 56P6733E 1500SG SCS205KG SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ	PDF
APT9402 Abstract: No abstract text available Text: TECHNOLOGY Breakthrough High Temperature Electrical Performance of SiC “Super” Junction Transistors SiC are being explored for power electronic conversion applications The SiC based 1200 V/220 mÙ Super Junction Transistors SJTs feature high temperature (> 300 °C) operation capability, faster switching transitions (< 20 ns), extremely	Original	com/micnotes/APT9402 APT9402	PDF
FF600R12IS4F Abstract: No abstract text available Text: Technische Information / technical information FF600R12IS4F IGBT-Module IGBT-modules PrimePACK 2 Modul mit schnellem IGBT2 und SiC Diode für hochfrequentes Schalten PrimePACK™2 with fast IGBT2 and SiC diode for high switching frequency IGBT-Wechselrichter / IGBT-inverter	Original	FF600R12IS4F FF600R12IS4F	PDF
Untitled Abstract: No abstract text available Text: GA35XCP12-247 IGBT/SiC Diode Co-pack Features Package • Optimal Punch Through OPT technology • SiC freewheeling diode • Positive temperature coefficient for easy paralleling • Extremely fast switching speeds • Temperature independent switching behavior of SiC rectifier	Original	GA35XCP12-247 247AB Ac155	PDF
FF600R12IS4F Abstract: No abstract text available Text: Technische Information / technical information FF600R12IS4F IGBT-Module IGBT-modules PrimePACK 2 Modul mit schnellem IGBT2 und SiC Diode für hochfrequentes Schalten und NTC PrimePACK™2 module with fast IGBT2 and SiC Diode for high frequency switching and NTC	Original	FF600R12IS4F FF600R12IS4F	PDF
Untitled Abstract: No abstract text available Text: GA35XCP12-247 IGBT/SiC Diode Co-pack Features Package • Optimal Punch Through OPT technology • SiC freewheeling diode • Positive temperature coefficient for easy paralleling • Extremely fast switching speeds • Temperature independent switching behavior of SiC rectifier	Original	GA35XCP12-247 247AB Ac155	PDF
Untitled Abstract: No abstract text available Text: Technische Information / technical information FF600R12IS4F IGBT-Module IGBT-modules PrimePACK 2 Modul mit schnellem IGBT2, SiC Diode und NTC für hochfrequentes Schalten PrimePACK™2 with fast IGBT2, SiC diode and NTC for high switching frequency IGBT-Wechselrichter / IGBT-inverter	Original	FF600R12IS4F	PDF
Untitled Abstract: No abstract text available Text: Hybrid Si-IGBT/SiC Rectifier co-packs and SiC JBS Rectifiers offering superior surge current capability and reduced power losses S.G. Sundaresana,*, C. Sturdevant, H. Issa, M. Marripelly, E. Lieser and R. Singh GeneSiC Semiconductor, 43670 Trade Center Pl, Suite 155, Dulles, Virginia 20166, USA.	Original	GA100XCP12	PDF
Untitled Abstract: No abstract text available Text: GB100XCP12-227 IGBT/SiC Diode Co-pack VCES = ICM = VCE SAT = Features Package •         RoHS Compliant Optimal Punch Through (OPT) technology SiC freewheeling diode Positive temperature coefficient for easy paralleling Extremely fast switching speeds	Original	GB100XCP12-227	PDF
Untitled Abstract: No abstract text available Text: SPM1005 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 5287, Rev. C 600 VOLT, 16 AMP LOW LOSS ULTRAFAST IGBT THREE PHASE BRIDGE MODULE WITH SiC FREEWHEELING DIODE Features • SiC Free wheel diode – zero reverse recovery loss  Isolated base plate  Low thermal impedance	Original	SPM1005	PDF
CW2013 Abstract: sic marking e6 Text: SENSITRON SEMICONDUCTOR SPM1001 Technical Data DATASHEET 5361, Rev. - THREE-PHASE IGBT BRIDGE with SiC DIODES, BRAKE MOSFET and INTEGRATED BRAKE RESISTOR DESCRIPTION: • 600 VOLT, 50 AMP, THREE PHASE IGBT BRIDGE  SILICON CARBIDE SiC 20A 600V ANTI PARALLEL DIODES – ZERO RECOVERY AND NO	Original	SPM1001 CW2013 sic marking e6	PDF
Untitled Abstract: No abstract text available Text: GB100XCP12-227 IGBT/SiC Diode Co-pack VCES = ICM = VCE SAT = Features Package •         RoHS Compliant Optimal Punch Through (OPT) technology SiC freewheeling diode Positive temperature coefficient for easy paralleling Extremely fast switching speeds	Original	GB100XCP12-227	PDF

Untitled Abstract: No abstract text available Text: GA100JT12-227 Normally – OFF Silicon Carbide Junction Transistor Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier	Original	GA100JT12-227 OT-227 GA100JT12-227 GA100JT12 833E-48 073E-26 398E-9	PDF
Untitled Abstract: No abstract text available Text: 10-PZ123BA080MR-M909L28Y flow 3xBOOST0-SiC 1200V/80mΩ Features flow 0 12mm housing ● SiC-Power MOSFET´s and Schottky Diodes ● 3 channel boost topology ● Ultra Low Inductance with integrated DC-capacitors ● Switching frequency >100kHz ●Temperature sensor	Original	10-PZ123BA080MR-M909L28Y 200V/80mâ 100kHz	PDF
solar inverters circuit diagram Abstract: 10 amp smps SMPS CIRCUIT DIAGRAM USING TRANSISTORS solar inverter circuit 220AC INVERTER circuit diagram of high power smps STPSC806D 15 amp diodes 40 v 20 amp, diode STPSC606D Text: 600 V SiC diodes PFC boost diodes in high-power SMPS and freewheeling diodes in high-frequency inverters Targeting the industrial and PFC functions in SMPS applications, these SiC structured Schottky diodes exhibit a 4 times better dynamic characteristic and 15% less	Original	O-220AC STPSC606D STPSC606G-TR STPSC806D STPSC806G-TR STPSC1006D solar inverters circuit diagram 10 amp smps SMPS CIRCUIT DIAGRAM USING TRANSISTORS solar inverter circuit 220AC INVERTER circuit diagram of high power smps STPSC806D 15 amp diodes 40 v 20 amp, diode STPSC606D	PDF
Untitled Abstract: No abstract text available Text: GA10SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier	Original	GA10SICP12-247 O-247AB 427E-12 1373E-12 0E-03 GA10SICP12 55E-15 71739E-05 40E-10 00E-10	PDF
Untitled Abstract: No abstract text available Text: GA50SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier	Original	GA50SICP12-227 OT-227 833E-48 073E-26 398E-9 026E-09 0E-03 GA50SIPC12 99E-16 3E-05	PDF
Untitled Abstract: No abstract text available Text: GA10SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier	Original	GA10SICP12-263 O-263-7L) 427E-12 1373E-12 0E-03 GA10SICP12 55E-15 71739E-05 40E-10 00E-10	PDF
Untitled Abstract: No abstract text available Text: Application Note AN-10B: Driving SiC Junction Transistors SJT : Two-Level Gate Drive Concept Introduction Two-Level SJT Gate Drive Circuit GeneSiC Semiconductor is commercializing 1200 V and 1700 V SiC Junction Transistors (SJTs) with current ratings ranging from 3 A to 50	Original	AN-10B: AN-10A Nov-2011. GA06JT12-247	PDF
solar inverters circuit diagram Abstract: 10 amp smps circuit diagram of high power smps solar power inverter Circuit diagram SMPS CIRCUIT DIAGRAM 220AC INVERTER solar inverter circuit 15 amp diodes smps inverter circuit emi filter inverter motor supply Text: 600 V SiC diodes PFC boost diodes in high-power SMPS and freewheeling diodes in high-frequency inverters Targeting the industrial and PFC functions in SMPS applications, these SiC structured Schottky diodes exhibit a 4 times better dynamic characteristic and 15% less	Original	O-220AC STPSC406D STPSC406B-TR STPS606D STPSC606G-TR STPSC806D STPSC1006D solar inverters circuit diagram 10 amp smps circuit diagram of high power smps solar power inverter Circuit diagram SMPS CIRCUIT DIAGRAM 220AC INVERTER solar inverter circuit 15 amp diodes smps inverter circuit emi filter inverter motor supply	PDF
Untitled Abstract: No abstract text available Text: GA20SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier	Original	GA20SICP12-247 O-247AB 0SICP12 GA20SICP12 833E-48 073E-26 752E-12 01E-09 50E-03	PDF
Untitled Abstract: No abstract text available Text: GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier	Original	GA100SICP12-227 833E-48 073E-26 398E-9 026E-09 0E-03 GA100SIPC12 99E-16 3E-05 86E-09	PDF

SIC IGBT Search Results

SIC IGBT Result Highlights (5)

SIC IGBT Datasheets Context Search

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SEMISOUTH

SCS205KG

APT9402

FF600R12IS4F

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FF600R12IS4F

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CW2013

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solar inverters circuit diagram

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solar inverters circuit diagram

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