siemens dioden
Abstract: leistungstransistoren thyristor capacitive discharge ignition Leistungsdiode car ignition circuit diagram of mosfet BUZ 384 car ignition chip die npn transistor Siemens Halbleiter
Text: Technische Angaben Erläuterungen der Datenblattwerte Qualität und Zuverlässigkeit Technical Inform ation Explanation o f Data Sheet Parameters Q uality and R eliability SIEM ENS 1 Übersicht 1.1 SIPM OS-Leistungstransistoren Leistungstransistoren im Bereich 5 0 V .
|
OCR Scan
|
SIL00001
MILSTD-883,
siemens dioden
leistungstransistoren
thyristor capacitive discharge ignition
Leistungsdiode
car ignition circuit diagram
of mosfet BUZ 384
car ignition
chip die npn transistor
Siemens Halbleiter
|
PDF
|
11S2
Abstract: BUZ11 BUZ11A BUZ11S2
Text: SIEMENS SIPMOS Power MOS Transistors BUZ 11 BUZ 11A BUZ 11S2 = 50 . . 60 V ^DS = 26 . . 30 A h "•DSfoni = 0.04 . . 0.055 Q Rn • • • • N channel Enhancement mode Avalanche-proof Package: T Q -2 2 0 A B 1 Type Ordering code BUZ 11 C67078-A1301-A2
|
OCR Scan
|
C67078-A1301-A2
C67078-S1301-A3
C67078-S1301-A5
11/11A
11S2
BUZ11
BUZ11A
BUZ11S2
|
PDF
|
a42168
Abstract: No abstract text available
Text: SIEMENS SIPMOS Power MOS Transistor BUZ 12 AL = 50 V = 42 A ^Dsion = 0.035 Q VDS Io • • N channel E nhancem ent mode • • • Logic level Avalanche-proof Package: TO -220 A B 1) TVpe Ordering code B U Z 1 2 AL C 6 7 0 78-S 1 33 2-A 3 Maximum Ratings
|
OCR Scan
|
SIL0000150
a42168
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS SIPMOS Power MOS Transistor VDS lD ^D S o n • • • • • BUZ 11 AL = 50 V = 26 A = 0.055 Q N channel E nhancem ent mode Logic level A valanche-proof Package: T O -2 2 0 A B ') Type Ordering code BUZ 11 AL C 6 70 78-S 1 33 0-A 3 Maximum Ratings
|
OCR Scan
|
SIL0000117
SIL00032
SIL0000127
|
PDF
|
of mosfet BUZ 384
Abstract: simple SL 100 NPN Transistor leistungstransistoren ANALOG DEVICES bar code on the lable test transistors Siemens Dioden fgs npn
Text: SIEMENS Technische Angaben Technical Information 1 Übersicht 1 Overview 1.1 SIPMOS-Leistungstransistoren 1.1 SIPMOS Power Transistors Leistungstransistoren im Bereich 5 0 V . 1000 V und 10 m fi . 8 Q Power transistors in the 50 V to 1000 V and 10 mQ to 8 Q range
|
OCR Scan
|
SIL00001
SIL00002
MILSTD-883,
of mosfet BUZ 384
simple SL 100 NPN Transistor
leistungstransistoren
ANALOG DEVICES bar code on the lable
test transistors
Siemens Dioden
fgs npn
|
PDF
|
UZ12A
Abstract: a42168
Text: SIEMENS SIPMOS Power MOS Transistors BUZ 12 BUZ12A VDS = 50 V Io = 42 A * ds o„> = 0 .0 2 8 /0 .0 3 5 O • • • • N channel Enhancement mode Avalanche-proof Package: TO-220 AB ' Type Ordering code BUZ 12 C67078-S1331-A2 BUZ 12 A C67078-S1331-A3 Maximum Ratings
|
OCR Scan
|
BUZ12A
O-220
C67078-S1331-A2
C67078-S1331-A3
SIL0000143
UZ12A
a42168
|
PDF
|