SILICON BIPOLAR TRANSISTOR Search Results

SILICON BIPOLAR TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
GT30J110SRA	Toshiba Electronic Devices & Storage Corporation	IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N)
TLP5702H	Toshiba Electronic Devices & Storage Corporation	Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L
TLP5705H	Toshiba Electronic Devices & Storage Corporation	Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L

SILICON BIPOLAR TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Bipolar Junction Transistor Abstract: 414 rf transistor AT-420 Text: RF and Microwave Silicon Bipolar␣ Transistors Characteristics The silicon bipolar transistor is a semiconductor device, with amplification due to current gain. The advantages silicon bipolar transistors have over other transistor types include mature technology both in the understanding of the device physics and	Original	AT-640 AT-414/415 AT-420 Bipolar Junction Transistor 414 rf transistor	PDF
high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz Abstract: Glossary of Microwave Transistor Terminology Text: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .	Original	5966-3085E high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz Glossary of Microwave Transistor Terminology	PDF
high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz Abstract: S11A1 Glossary of Microwave Transistor Terminology Text: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .	Original	5966-3085E high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz S11A1 Glossary of Microwave Transistor Terminology	PDF
IC 8088 Abstract: MA4T64535 "Semiconductor Master" thurlby power supply MA4T645 micro X ODS-512 MA4T64500 Text: Preliminary Specification High Reliability Semiconductor Silicon Bipolar Low Noise Transistor V1.00 ODS 512 Outline Features x x x x ML4T645-S-512 fT to 9 GHz Low Noise Figure Silicon Dioxide and Silicon Dioxide Passivation Space Qualified Description The ML4T645 is a NPN small signal silicon bipolar transistor, well	Original	ML4T645-S-512 ML4T645 IC 8088 MA4T64535 "Semiconductor Master" thurlby power supply MA4T645 micro X ODS-512 MA4T64500	PDF
HP346A Abstract: D2030 5091-9311E 47433 W02 SOT23 AT-30511 AT-31011 AT-32033 ATF-10236 Hewlett-Packard transistor microwave Text: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors	Original		PDF
bipolar transistor s-parameter Abstract: bipolar transistor ghz s-parameter 200 mil BeO package RF NPN POWER TRANSISTOR 2.5 GHZ 20-50-200 TRANSISTOR 12 GHZ RF TRANSISTOR 2.5 GHZ s parameter ic-110 RF POWER TRANSISTOR NPN vhf RF NPN POWER TRANSISTOR 3 GHZ Text: AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description Features The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is designed	Original	AT-64023 AT-64023 5965-8916E 5989-2658EN bipolar transistor s-parameter bipolar transistor ghz s-parameter 200 mil BeO package RF NPN POWER TRANSISTOR 2.5 GHZ 20-50-200 TRANSISTOR 12 GHZ RF TRANSISTOR 2.5 GHZ s parameter ic-110 RF POWER TRANSISTOR NPN vhf RF NPN POWER TRANSISTOR 3 GHZ	PDF
yg 2025 Abstract: HP346A 2305 isolator AT-30511 AT-31011 AT-32033 ATF-10236 AN-G004 equivalent transistor K 3532 Text: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors	Original	5964-3854E yg 2025 HP346A 2305 isolator AT-30511 AT-31011 AT-32033 ATF-10236 AN-G004 equivalent transistor K 3532	PDF
HBFP0450 Abstract: HBFP-0450 LL1608-FH2N7S MGA-52543 Silicon Bipolar Transistor HBFP-0450 ADS MODEL 20NF2 agilent semiconductor Text: A 400, 900 and 1800 MHz Buffer/Driver Amplifier using the Agilent HBFP-0450 Silicon Bipolar Transistor Application Note 1206 Introduction Agilent Technologies’ HBFP-0450 is a high performance isolated collector silicon bipolar transistor housed in 4-lead SC-70 SOT-343	Original	HBFP-0450 SC-70 OT-343) HBFP-0450 HBFP0450 5968-4957E LL1608-FH2N7S MGA-52543 Silicon Bipolar Transistor HBFP-0450 ADS MODEL 20NF2 agilent semiconductor	PDF
b 595 transistor Abstract: transistor 5 Amp 700 volt MA4T24300 transistor b 595 MA4T24335 Text: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistor MA4T243 Series MA4T243 Series Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features • • • • • Case Style Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor	Original	MA4T243 MA4T24300 b 595 transistor transistor 5 Amp 700 volt transistor b 595 MA4T24335	PDF
transistor zo 107 Abstract: AT-32063 AT-32063-BLK AT-32063-TR1 4046 IC d 1879 sc 107 transistor Text: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package.	Original	AT-32063 AT-32063 OT-363 OT-363 SC-70) transistor zo 107 AT-32063-BLK AT-32063-TR1 4046 IC d 1879 sc 107 transistor	PDF
8 pin ic 3844 for 5 volts Abstract: AT-32063 AT-32063-BLK AT-32063-TR1 transistor zo 107 Text: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package.	Original	AT-32063 AT-32063 OT-363 OT-363 SC-70) 5965-1234E 5965-8921E 8 pin ic 3844 for 5 volts AT-32063-BLK AT-32063-TR1 transistor zo 107	PDF
PC3223TB Abstract: marking c3j C1f TRANSISTOR marking c1d PC3223TB-E3 PC2708TB PC2709TB UPC3223TB PC3223TB-E3-A PC2710TB Text: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3223TB 5 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3223TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz fmax UHS0 Ultra High Speed Process silicon bipolar process.	Original	UPC3223TB PC3223TB HS350 WS260 IR260 PU10491EJ01V0DS marking c3j C1f TRANSISTOR marking c1d PC3223TB-E3 PC2708TB PC2709TB UPC3223TB PC3223TB-E3-A PC2710TB	PDF
mount chip transistor 332 Abstract: SOT-23 TRANSISTOR 548 MA4T64500 Text: Silicon Bipolar High fT Low Noise Microwave Transistor MA4T645 Series MA4T645 Series Silicon Bipolar High fT Low Noise Microwave Transistors Features • • • • • • • Case Style fT to 9 GHz Low Noise Figure High Associated Gain Hermetic and Surface Mount Packages Available	Original	MA4T645 mount chip transistor 332 SOT-23 TRANSISTOR 548 MA4T64500	PDF
PTH hole diameter vs lead resistor Abstract: common emitter amplifier circuit designing W105 0805CS-080XMBC HBFP-0405 HBFP0420 HBFP-0420 HBPF-0405 common base amplifier circuit designing Text: 800 to 950 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors Application Note 1161 Introduction Avago Technologies’ HBFP-0405 and HBFP-0420 are high performance isolated collector silicon bipolar transistors housed in 4-lead SC-70 SOT-343 surface	Original	HBFP-0405 HBFP-0420 HBFP-0420 SC-70 OT-343) HBFP0420 PTH hole diameter vs lead resistor common emitter amplifier circuit designing W105 0805CS-080XMBC HBPF-0405 common base amplifier circuit designing	PDF

at 64000 Abstract: at64000 S21E at-64000 Text: AT-64000 Up to 4 GHz Linear Power Silicon Bipolar Transistor Chip Data Sheet Description Features The AT-64000 of Avago Technologies is a high performance NPN silicon bipolar transistor. This device is designed for use in medium power, wideband amplifier and oscillator applications operating over	Original	AT-64000 AT-64000 AT-64000-GP4 AV01-0274EN at 64000 at64000 S21E	PDF
AT-420 Abstract: No abstract text available Text: H EW LETT' mLlíM PA CK A R D RF and Microwave Silicon Bipolar Transistors Characteristics The silicon bipolar transistor is a semiconductor device, with amplification due to current gain. The advantages silicon bipolar transistors have over other transistor types include mature	OCR Scan	AT-414/415 AT-420	PDF
AT605 Abstract: No abstract text available Text: RF and M icrowave S ilicon Bipolar Transistors The silicon bipolar transistor is a semiconductor device, with amplification due to current gain. The advantages silicon bipolar transistors have over other transistor types include m ature technology both in the	OCR Scan	AT-420 AT-214 AT-005 AT-016. AT605	PDF
2N6665 Abstract: MA42001-509 MA42001 MA42010 Text: Silicon Low Noise Bipolar Transistors MA42000 Series Description NPN SILICON PLANAR TRANSISTORS This series of NPN silicon bipolar transistors is designed to provide low noise figures at frequencies from 10 to 750 MHz. These transistors have flat noise figures over a wide	OCR Scan	MA42000 2N6665 MA42001 MA42014 MA42002 MA42004 MA42003 MA42005 MA42006 MA42008 MA42001-509 MA42010	PDF
SVI 3104 c Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720 Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or	OCR Scan	AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720	PDF
Untitled Abstract: No abstract text available Text: 11 T> m Sb4E514 MA42000 Series Description 000145D Ö « n i C M/A-COM Silicon Low Noise Bipolar Transistors SEMICOND-iBRLNGTON . T ' 3 I ~ *? NPN SILICON PLANAR TRANSISTORS This series of NPN silicon bipolar transistors is designed to provide low noise figures at frequencies from 10 to 750	OCR Scan	Sb4E514 000145D MA42000 2N6665 MA42001 MA42014 MA42002 MA42004 MA42003 MA42005	PDF
AT-310 Abstract: AT-31011 AT-31033 SAI SOT23 Text: Thal mLßm HP AE CWKLAERTDT Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data - I AT-31011 AT-31033 Features Description • High Perform ance Bipolar	OCR Scan	AT-31011 AT-31033 AT-31011: AT-31033: OT-143 OT-143 AT-31011) OT-23 AT-31033) AT-310 SAI SOT23	PDF
low noise transistors rf Abstract: No abstract text available Text: Silicon Low Noise Bipolar Transistors Features • LOW NOISE THROUGH 2.5 GHz ■ HERMETIC PACKAGE ■ CAN BE SCREENED TO JAN, JANTX, JANTXV LEVELS Description The series of Silicon NPN bipolar transistors are designed for low noise amplifiers in the frequency range of 60 MHz	OCR Scan		PDF
uPC1158H2 Abstract: PC1158H2 UPC1158H UPC1158 PC1158H PC1158 O72C PC11 microphone amplifier with alc S3NAB Text: BIPOLAR ANALOG INTEGRATED CIRCUIT JUL PC1158H2 LOW NOISE PREAMPLIFIER WITH AUTOMATIC LEVEL CONTROL SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT DESCRIPTION The uPC 1158H2 is a silicon monolithic integrated circuit designed for high gain, low noise preamplifier	OCR Scan	PC1158H2 uPC1158H2 L42752S s-78K PC1158H2 UPC1158H UPC1158 PC1158H PC1158 O72C PC11 microphone amplifier with alc S3NAB	PDF
Untitled Abstract: No abstract text available Text: Power Silicon Bipolar Transistors S e le ctio n G u id e .4-2	OCR Scan		PDF

SILICON BIPOLAR TRANSISTOR Search Results

SILICON BIPOLAR TRANSISTOR Result Highlights (5)

SILICON BIPOLAR TRANSISTOR Datasheets Context Search

Bipolar Junction Transistor

high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

IC 8088

HP346A

bipolar transistor s-parameter

yg 2025

HBFP0450

b 595 transistor

transistor zo 107

8 pin ic 3844 for 5 volts

PC3223TB

mount chip transistor 332

PTH hole diameter vs lead resistor

at 64000

AT-420

AT605

2N6665

SVI 3104 c

Untitled

AT-310

low noise transistors rf

uPC1158H2

Untitled