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    SILICON EPITAXIAL MESA DIODE Search Results

    SILICON EPITAXIAL MESA DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    SILICON EPITAXIAL MESA DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR 1C6622 TECHNICAL DATA DATASHEET 345, REV B SILICON ULTRA-FAST RECOVERY EPITAXIAL RECTIFIER DIE Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Glass passivated Epitaxial Diode with Mesa Structure


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    1C6622 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data - January 1999 GVD30600 SERIES SPRAGIH-GOODMAN ELECTRONICS, INC. W IDEBAND HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS « Mesa Epitaxial Silicon Construction • Silicon Dioxide Passivated > Superior Wide Range Linear Characteristics


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    GVD30600 GVD30601-004 GVD30602-004 GVD30603-004 GVD30601-001 GVD30602-001 GVD30603-001 PDF

    GVD30422-001

    Abstract: No abstract text available
    Text: Preliminary Data - January 1999 GVD30400 SERIES SPRAGUE-GOODMAN ELECTRONICS, INC. W IDEBAND HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS • Mesa Epitaxial Silicon Construction > Silicon Dioxide Passivated • Superior Wide Range Linear Characteristics


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    GVD30400 GVD30422-004 GVD30432-004 GVD30442-004 GVD30422-001 GVD30432-001 GVD30442-001 GVD30452-001 GVD30462-001 OT-23 PDF

    DH724

    Abstract: DH730 DH732
    Text: TUNING VARACTOR Silicon hyperabrupt junction tuning varactor SILICON HYPERABRUPT JUNCTION TUNING VARACTOR Description This series of silicon tuning varactors consists of hyperabrupt epitaxial devices. They incorporate a passivated mesa technology. Packaged or chip devices are available for VHF linear electronic tuning.


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    EH724 EH726 EH728 EH730 EH732 CTO/CT20 DH724 DH726 DH728 DH730 DH732 PDF

    DH736

    Abstract: DH737 DH735 varactor KU BAND F27D DH733 M208 EH736
    Text: TUNING VARACTOR Microwave silicon hyperabrupt junction tuning varactor MICROWAVE SILICON HYPERABRUPT JUNCTION TUNING VARACTOR Description This series of silicon tuning varactors consists of hyperabrupt epitaxial devices. They incorporate a passivated mesa technology. Packaged or chip devices are available for linear electronic tuning up to


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    EH733 EH734 EH735 EH736 EH737 EH738 DH733 DH734 DH735 DH736 DH737 varactor KU BAND F27D M208 PDF

    MicroMetrics MHV 500 series

    Abstract: MHV500 MHV513 MHV512 MHV503 MHV502 MHV501 MHV504 MHV507 "Tuning Varactors"
    Text: Microwave Hyperabrupt Tuning Varactors Description The MicroMetrics MHV 500 series Microwave Hyperabrupt Tuning Varactors are silicon epitaxial mesa devices with high reliability glass passivation which ensures optimum VCO settling time and flat post tuning


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    charact00 MHV500 MHV501 MHV502 MHV503 MHV504 MHV505 MHV506 MHV507 MHV508 MicroMetrics MHV 500 series MHV500 MHV513 MHV512 MHV503 MHV502 MHV501 MHV504 MHV507 "Tuning Varactors" PDF

    micrometrics vco

    Abstract: MHV502
    Text: Microwave Hyperabrupt Tuning Varactors Description The MicroMetrics MHV 500 series Microwave Hyperabrupt Tuning Varactors are silicon epitaxial mesa devices with high reliability glass passivation which ensures optimum VCO settling time and flat post tuning


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    chara2400 MHV500 MHV501 MHV502 MHV503 MHV504 MHV505 MHV506 MHV507 MHV508 micrometrics vco MHV502 PDF

    gc15002-00

    Abstract: GC15005
    Text: GC15001 GC15013 TUNING DIODES Frequency Linear Tuning Varactors TM RoHS Compliant KEY FEATURES A Frequency Linear Tuning Varactor FLTVAR is a silicon epitaxial mesa device, designed to provide wideband Linear Tuning in VCO and filter applications.


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    GC15001 GC15013 GC15xxxx gc15002-00 GC15005 PDF

    GC15000

    Abstract: TM 937 GC15001 GC15001-00 GC15002-00 GC15003-00 GC15004-00 GC15013 GC15002
    Text: GC15001 GC15013 TUNING DIODES Frequency Linear Tuning Varactors TM RoHS Compliant KEY FEATURES A Frequency Linear Tuning Varactor FLTVAR is a silicon epitaxial mesa device, designed to provide wideband Linear Tuning in VCO and filter applications.


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    GC15001 GC15013 GC15xxxx GC15000 TM 937 GC15001 GC15001-00 GC15002-00 GC15003-00 GC15004-00 GC15013 GC15002 PDF

    1C5552

    Abstract: No abstract text available
    Text: 1C5552 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4312, REV- STANDARD RECOVERY SILICON RECTIFIER DIE Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features: • • • • Glasspassivated Epitaxial Diode with Mesa Structure


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    1C5552 1C5552 PDF

    Untitled

    Abstract: No abstract text available
    Text: Tuning Varactors FREQUENCY LINEAR TUNING VARACTORS DESCRIPTION APPLICATIONS A Frequency Linear Tuning Varactor FLTVAR TM is a silicon epitaxial mesa device, designed to provide wideband Linear Tuning in VCO and filter applications. These diodes feature ceramic glass or thermal oxide


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    GC1513 PDF

    Untitled

    Abstract: No abstract text available
    Text: TUNING VARACTOR Plastic package Surface Mount Silicon abrupt tuning varactor SOT23 SURFACE MOUNT SILICON ABRUPT TUNING VARACTOR Description This series of silicon tuning varactors have an epitaxial mesa design with a high temperature passivation. This technology is used to produce abrupt tuning varactor in SOT23 package. This family


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    DH71000 applicati51 DH71010-53 DH71016-53 DH71020-53 DH71030-53 DH71045-53 DH71067-53 DH71100-53 DH71010-54 PDF

    DH71000

    Abstract: varactor diode capacitance range varactor DH71010 DH71030-70 tuning varactor
    Text: TUNING VARACTOR Plastic package Surface Mount Silicon abrupt tuning varactor SOT23 SURFACE MOUNT SILICON ABRUPT TUNING VARACTOR Description This series of silicon tuning varactors have an epitaxial mesa design with a high temperature passivation. This technology is used to produce abrupt tuning varactor in SOT23 package. This family


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    DH71000 inclu0-60 DH71030-60 DH71045-60 DH71067-60 DH71100-60 DH71010-51 DH71016-51 DH71020-51 DH71030-51 varactor diode capacitance range varactor DH71010 DH71030-70 tuning varactor PDF

    Untitled

    Abstract: No abstract text available
    Text: GC15001 GC15013 TUNING DIODES Frequency Linear Tuning Varactors TM RoHS Compliant K EY FEAT U RES A Frequency Linear Tuning Varactor FLTVAR is a silicon epitaxial mesa device, designed to provide wideband Linear Tuning in VCO and filter applications.


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    GC15001 GC15013 paralle013 GC15xxxx PDF

    varactor diode parameter

    Abstract: tuning varactor CT25 Q62702-B70 BBY33
    Text: Silicon Tuning Varactor ● BBY 33 BB-2 Tuning varactor in passivated Mesa technology epitaxial design Type Marking Ordering Code Pin Configuration Package1) BBY 33 BB-2 – Q62702-B70 Cathode: black dot, heat sink C1 Maximum Ratings Parameter Symbol Values


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    Q62702-B70 varactor diode parameter tuning varactor CT25 Q62702-B70 BBY33 PDF

    Q62702-B70

    Abstract: varactor diode parameter bby33 T marking varactor diode
    Text: SIEMENS Silicon Tuning Varactor BBY 33 BB-2 • Tuning varactor in passivated Mesa technology epitaxial design Type Marking BBY 33 BB-2 Ordering Code Pin Configuration Package1’ Q62702-B70 Cathode: black dot, heat sink C1 i — XI -4 EHA07001 Maximum Ratings


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    Q62702-B70 EHA07001 6535t a235bDS varactor diode parameter bby33 T marking varactor diode PDF

    Untitled

    Abstract: No abstract text available
    Text: TUNING VARACTOR Plastic package, Surface Mount hyperabrupt tuning varactor PLASTIC PACKAGE, SURFACE MOUNT HYPERABRUPT TUNING VARACTOR Description This series of silicon tuning varactors consists of hyperabrupt epitaxial devices. They incorporate a passivated mesa technology. This family is designed for a low cost medium to high volume market that


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    DH76000 mainly2-60 DH76022-51 DH76033 DH76033-60 DH76033-51 DH76047 DH76047-60 DH76047-51 DH76068 PDF

    Untitled

    Abstract: No abstract text available
    Text: TUNING VARACTOR Plastic package, Surface Mount hyperabrupt tuning varactor PLASTIC PACKAGE, SURFACE MOUNT HYPERABRUPT TUNING VARACTOR Description This series of silicon tuning varactors consists of hyperabrupt epitaxial devices. They incorporate a passivated mesa technology. This family is designed for a low cost medium to high volume market that


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    DH76000 DH77000 maDH76100-53 DH76150-53 DH77033-53 DH77047-53 DH77068-53 DH77100-53 DH77150-53 DH76010-54 PDF

    varactor APPLICATION

    Abstract: tuning varactor DH76022-51 DH76010 VARACTOR DIODE
    Text: TUNING VARACTOR Plastic package, Surface Mount hyperabrupt tuning varactor PLASTIC PACKAGE, SURFACE MOUNT HYPERABRUPT TUNING VARACTOR Description This series of silicon tuning varactors consists of hyperabrupt epitaxial devices. They incorporate a passivated mesa technology. This family is designed for a low cost medium to high volume market that


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    DH76000 HH76150 OD323 OT143 DH76010-53 DH76015-53 DH76022-53 DH76033-53 DH76047-53 DH76068-53 varactor APPLICATION tuning varactor DH76022-51 DH76010 VARACTOR DIODE PDF

    mesa diode

    Abstract: bxy21ca silicon epitaxial mesa diode
    Text: BXY21 CA Depletion-layer varactors BXY 21 CA is an epitaxial silicon mesa diode in a ceramic case. It is suitable for use as frequency converter and mixer in the GHz range. Type O rder num ber BXY 21 CA Q 62702-X54 0.06 4.15. W e ig h t app ro x. 1 . 4 g M axim um ratings 7amb = 25°C


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    BXY21 Q62702-X54 mesa diode bxy21ca silicon epitaxial mesa diode PDF

    DH736

    Abstract: DH735 dh 736 OF IC 733
    Text: V SILICON TUNING VAR ACTORS This series o f Si m icrow ave tuning varactors consists o f h yperabrupt epitaxial devices. They incorporate a passivated mesa tech n olog y. P acka g ed or chip devices are a va ila b le for linear e le ctron ic tuning up to the Ku band.


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    PDF

    BXY10

    Abstract: BXY13D BXY10C Z6 DIODE BXY13 BXY11 BXY10D BXY11E BXY13C DIODE G06
    Text: B X Y 10 C, 10 D, 11 E, 13 C, 13 D, 14 E Charge storage varactors for frequency multiplication Epitaxial silicon mesa diodes in a ceramic microwave case T yp e B X Y 10 C BXY10D BXY11E BXY13C B X Y 13 D B X Y 14 E T h e rm a l r e s is t a n c e Junction to case


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    BXY10 BXY10C BXY10D BXY11E BXY13C BXY13 BXY14 Q60223-Y10-C Q60223-Y10-D Q60223-Y11 BXY13D Z6 DIODE BXY11 DIODE G06 PDF

    IMPATT-Diode

    Abstract: impatt impatt diode IMPATT silicon 14A1 BGY12A BGY12B BGY13A BGY13B BGY14A
    Text: BGY12A, -12: B, -13 A, -13 B, -14 A, -14 B IMPATT-diodes for C and X band Avalanche transit tim e ATT diodes BGY 12 A, -12 IB , -13 A, -13 B, -1 4 A and 14 B are silicon epitaxial mesa devices w ith m ultilayer glass passivation. IM P A TT-diodes are suitable fo r generating and am plifying m icrow ave pow er directly from the DC


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    BGY12A, BGY12A Q62702-G BGY12B BGY13A BGY13B IMPATT-Diode impatt impatt diode IMPATT silicon 14A1 BGY14A PDF

    construction of varactor diode

    Abstract: GVD60100 GVD90009 GVD30503-001 GVD60200 SG-950 GVD1404-001 silicon epitaxial mesa diode GVD90007 GVD20433-001
    Text: Sprague-Goodman ENGINEERING BULLETIN SG-950 VARACTOR DIODES Sprague-Goodman Electronics, Inc. 1700 SHAMES DRIVE, WESTBURY, NY 11590 TEL: 516-334-8700 • FAX: 516-334-8771 E-MAIL: info@spraguegoodman.com VARACTOR DIODES SG-950 SUPER HYPERABRUPT TUNING VARACTOR DIODES


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    SG-950 construction of varactor diode GVD60100 GVD90009 GVD30503-001 GVD60200 SG-950 GVD1404-001 silicon epitaxial mesa diode GVD90007 GVD20433-001 PDF