BYX42-300
Abstract: BYX42 BYX42-300R rectifier to4
Text: BYX42 SERIES PH I L I P S INTERNATIONAL 711DÖ5b D D m b S b SbE D GDI • P H I N T -01-/7 SILICON RECTIFIER DIODES Diffused silicon rectifier diodes in DO-4 metal envelopes, intended fo r power rectifier applications. The series consists o f the following types:
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BYX42
BYX42-300
BYX42-300R
1200R.
711002b
7Z72552
711005b
rectifier to4
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BYX98
Abstract: BYX98-300R T-Oi-17 BYX98-300
Text: BYX98 SERIES T - O l- I T PHILIPS INTERNATIONAL IPHIN TllDÖEb GQMlfcibM T1S 5bE D RECTIFIER DIODES Silicon rectifier diodes in DO-4 metal envelopes, intended for use in power rectifier applications. The series consists of the following types: Normal polarity cathode to stud : BYX98-300to 1200.
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BYX98
BYX98-300to
BYX98-300R
1200R.
BYX98-300
BYX98
T-Oi-17
711D0Sb
7Z722SS
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SEM 5027A
Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Text: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES
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PHS803
Abstract: rectifier 802 D8755 IEC134 PHS801 PHS802 PHS804 ultra fast pulse generator Philips FA 153
Text: N A UE R PHILIPS/DISCRETE ObE D • ^ 5 3 = 1 3 1 ' 00111=71 3 ■ PHS801 SERIES H t - 0 3 - I 9 ULTRA FAST RECOVERY RECTIFIER DIODES The PHS801 series devices are glass-passivated, high efficiency silicon rectifier diodes featuring low
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PHS801
PHS801,
PHS802,
PHS803
PHS804.
M1572
rectifier 802
D8755
IEC134
PHS802
PHS804
ultra fast pulse generator
Philips FA 153
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BY509
Abstract: diode BY509 GQ11G1S 7Z82239 T-03-09 T0309
Text: mz N AMER PHILIPS /DISCRETE QbE D u_ _ ^53^31 GQ11Q1S 4 • : B YO ua T-03-09 SILICON E.H.T. SOFT-RECOVERY RECTIFIER DIODE E .H .T . rectifier diode in a glass envelope intended fo r use in high-voltage applications such as m u lti pliers, e.g. tripler circuits. The device features non-snap-off characteristics. Because o f the smallness of
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GQ11G1S
T-03-09
BY509
7Z82240
BY509
diode BY509
7Z82239
T-03-09
T0309
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2n3773 power Amplifier circuit diagrams
Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
Text: RCA Power Devices This DATABOOK contains com plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete
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AN-6671
G4000)
G4000
2n3773 power Amplifier circuit diagrams
SCR Handbook, rca
HC2000H
rca transistor npn a13
B0241C
npn transistor RCA 467
40659
triac t6440m
RCa T2850D
DIAC D3202U
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11E2
Abstract: 11E4 11E1
Text: SILICON RECTIFIER DIODE i a / ioo~ 11E1 11E2 11E4 4 oov FEATURES ° Miniature Size v j/— ° Low Forward Voltage Drop ° Low Reverse Leakage Current 0.7C027 0.5 .020) High Surge Capability ° 26mm and 52mm Inside Tape Spacing Package Available DIA 2.7(.106)d i a
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bblS123
11E2
11E4
11E1
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Untitled
Abstract: No abstract text available
Text: Silicon Power Rectifier 20 Series Dim Millimeter Inches Minimum Maximum Minimum Maximum Notes Notes: 1. 1 0 -3 2 UNF3A 2. Full threads within 2 1 /2 threads 3. Standard Polarity. Stud Is Cathode Reverse Polarity: Stud is Anode A B C D E F 6 H J M N P 1 7437
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D0203AA
S2020
S2040
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Untitled
Abstract: No abstract text available
Text: m M m m Chatsworth, CA ic m m s e m i P r o g r e s s P o w e re d b y T e ch no lo gy 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818) 701-4939 Features • • • • 1 Amp Silicon Rectifier 50 to 1000 Volts For Surface Mount Applications
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DO-214AC
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C701
Abstract: c701 scr 7377 AGT Thyristor dissipator C701PM C701PN C701PA C701PB C701PC
Text: G E CO/ S T A T I C GE-SPCO PtilR CMPNT 3Ô7HS04 DGGQCH? T H 6 E S P 34E D High Power 53mm Silicon Controlled Rectifier I A / V Static Power Component Operation Mah>emJ,A USA 300 T - 2 5 - 2 - 1 2000 PG 6.050A 9/1/88 C701 AM PLIFY IN G G A TE The C70J Reverse Blocking Thyristor now has extended voltage blocking
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7HS04
SF1154,
G322L
LS2037
SFU54
G322L,
C701
c701 scr
7377
AGT Thyristor
dissipator
C701PM
C701PN
C701PA
C701PB
C701PC
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Untitled
Abstract: No abstract text available
Text: 2bE D INTERNATIONAL RECTIFIER • 4fl5S4S2 GQ1071Q □ ■ International t o i Rectifier Inverter Type Thyristors 16 TO 80 AM PS R M S Part number 16RIF10W15 16RIF20W15 16RIF40W15 16RIF60W15 16RIF10W20 16RIF20W20 16RIF40W20 16RIF60W20 20RIF10W15 20RIF20W15
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GQ1071Q
16RIF10W15
16RIF20W15
16RIF40W15
16RIF60W15
16RIF10W20
16RIF20W20
16RIF40W20
16RIF60W20
20RIF10W15
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Untitled
Abstract: No abstract text available
Text: isocon COnPONENTS LTD MSE D • MûôbSlO GQQQE34 =1 HIISO 'pz//-?5 H igh Speed, H igh G ain C ouple rs continued Propagation Delay Time Part Number 6N138 6N139 ICPL2730 ICPL2731 4N45 4N46 Current Typ*cal M IN < % I IN R Z I Features Specified Input Current
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GQQQE34
6N138
6N139
ICPL2730
ICPL2731
300Kbit/s
40Current
IS-74
16mAn
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IRF540 n-channel MOSFET
Abstract: GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R
Text: I R , „-riJ- L . ,», IGBT, HEXFET, HEXSense and Logic Level Die in t e r n a t io n a l - INTERNATIONAL R E C T I F I E R StE D • QD102tib ? ■ IGBTs, HEXFET, HEXSENSE and LOGIC LEVEL HEXFET DIE ^ - q/-OS~ International Rectifier now support Die and Wafer sales from their European Headquarters at Oxted, England.
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QD102t
IRF540 n-channel MOSFET
GES 9515
irf740,irf840
IRC540 equivalent
RTV3140
IRF540 mosfet with maximum VDS 30 V
IRF540 p-channel MOSFET
IRLC120
AN964
IRFC9140R
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B857
Abstract: water flow sensor "water Flow Sensor" silicon rectifier gq b859 SKWD7000 U4T DIODE B-857
Text: S1E D • Û13bb71 G003fiTb Û4T m Z Z K G s e MIKRDN SEMIKRON INC V rsm/V If a v rrm V SKWD 7 0 0 0 /0 2 SKWD 7 0 0 0 /0 4 SKWD 7 0 0 0 /0 6 200 400 600 Symbol Voiw = 4 l/min ; Tw = 40 °C; ED = 100% Voiw = 8 l/min Ifsm Tvj Tvj Tvj Tvj = = = = 40 °C 180°C
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13bb71
10PA2s
fll3bb71
T-55T
SKWD7000
B8-59
B857
water flow sensor
"water Flow Sensor"
silicon rectifier gq
b859
U4T DIODE
B-857
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U9024N
Abstract: BSS 250 IRFR P-Channel MOSFET
Text: P D - 9.1506 International IGR Rectifier PRELIMINARY 1RFR/U9024N HEXFET Power MOSFET Ultra Low On-Resistance P-Channel Surface Mount IRFR9024N Straight Lead (IRFU9024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Vdss = -55V RDS(on) = 0.175Í2
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IRFR9024N)
IRFU9024N)
1RFR/U9024N
4A5545E
002flL07
U9024N
BSS 250
IRFR P-Channel MOSFET
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IEC60-2
Abstract: No abstract text available
Text: GENERAL EXPLANATORY NOTES RECTIFIER DIODES REVERSE RECOVERY When a semiconductor rectifier diode has been conducting in the forward direction sufficiently long to establish the steady state, there will be a charge due to minority carriers present. Before the device can
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Untitled
Abstract: No abstract text available
Text: T PD 9.1508A International IG R Rectifier IR L M S 1503 PRELIMINARY HEXFET Power MOSFET • Generation V Technology • Micro6 Package Style • Ultra Low Rds on • N-Channel MOSFET Voss = 30V R o S (o n ) = 0 . 1 0 Q Description Fifth Generation H E X F E T s from international Rectifier
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554S2
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DD6120
Abstract: DD6120H DD6120S DD6120V DD6121 DD6123 DD6126
Text: ELEK LTD 2 5 j\ fil D 81C St.07G13 0000055 fl ~ 00055 ILUCB D _ _ DD6120 SERIES S IL IC O N D IF F U S E D J U N C T IO N P R E S S -F IT R E C T IF IE R S The D D 6 1 2 0 series are case rated, silicon diffused junction, medium current press-fit rectifiers. They conform to B S S O - 4 0 , J E D E C D O -21 and IE C A 6 outlines.
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Sti07G13
DD6120
BSSO-40,
DO-21
DD6120H
DD6120S
DD6120V
DD6121
DD6123
DD6126
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100v 3A silicon controlled rectifier
Abstract: da1002 DA1000 DA1001
Text: LUCAS S T A B I L I T Y ELEK LTD SfciQ?013 011_ J> UCAS 81C 00001 0G0Q001 ? « LU C B PRODUCTS D A1000 CONTROLLED AVALANCHE RECTIFIERS DA1001 6 0 -150V DA100Z PEAK REVERSE VOLTAGE The DA10 0 0 /1 /2 controlled avalanche rectifiers are silicon diffused junction
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---81C
0-150V
DA1000
DA1001
DA100Z
DA1000/1/2
DO-15
DA1002
100v 3A silicon controlled rectifier
da1002
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D10de
Abstract: IN4247 MIL-S-19500E IN5618 1N4245 1N4249 1N5618 1N5620 1N5622 1n4247 substitution
Text: MIL SPECS 44E J> • 0000155 0032^04 1 ■IIIILS INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by ^ 5 ^3 MIL-S-19500/286D SUPERSEDING MIL-S-19500/286C 6 March 1970 MILITARY SPECIFICATION
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HIL-S-19500/286D
MIL-S-19500/286C
1N4245
1N4249
1H5614.
1NS616.
1N5618,
1N5620,
1N5622
MIL-S-19500/427
D10de
IN4247
MIL-S-19500E
IN5618
1N5618
1N5620
1n4247 substitution
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250-28UNF-2B
Abstract: 250-28UNF VV-I-530 1N5597 corona discharge circuit BIDDLE PDA FOR JANTX GRADE DEVICE ic 4046 1N5600 kvr 10 621
Text: MIL SP ECS 000 • 0000125 0031012 3 ■ M I L S The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 February 1992 I 1NCH-POUNO MIL-S-19500/404B 15 November 1991 SUPERSEDING MIL-S-1950Q/404A 6 Apri I 1971
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MIL-S-19500/404B
MIL-S-1950Q/404A
1N5597,
1N5600,
1N5603,
MIL-S-19500.
250-28UNF-2B
250-28UNF
VV-I-530
1N5597
corona discharge circuit
BIDDLE
PDA FOR JANTX GRADE DEVICE
ic 4046
1N5600
kvr 10 621
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Untitled
Abstract: No abstract text available
Text: PD 9.871 A International S»1 Rectifier IRF7101 H EXFET Pow er M O SFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dual N-Channel M OSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching S1H
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IRF7101
GGEbH72
5545E
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Untitled
Abstract: No abstract text available
Text: International IOR Rectifier Provisional Data Sheet No. PD-9.720B REPETITIV E AVALANCHE AND d v /d t RATED IRHN7150 IRHN8150 HEXFET TRANSISTOR N -CH A N N EL M EGA RAD HARD 100 Volt, 0.0550, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAO HARD technology
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IRHN7150
IRHN8150
Q0B5004
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Untitled
Abstract: No abstract text available
Text: PD 9.1437A International K 3R Rectifier IRF9540N PRELIMINARY H EXFET Pow er M O SFE T • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated V q ss = -1 0 0 V F b s o n = 0 . 1 1 7 Q
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IRF9540N
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