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    SILICON RECTIFIER GQ Search Results

    SILICON RECTIFIER GQ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    P104 Coilcraft Inc Silicon Controlled Rectifier, Visit Coilcraft Inc
    FSASF214E2 Amphenol Communications Solutions Mini SAS, High Speed Input Output Connector, 1X2 CAGE ASSY 0 DEG NO SCR Visit Amphenol Communications Solutions
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    iW673-01 Renesas Electronics Corporation Digital Green-Mode Synchronous Rectifier Controller Visit Renesas Electronics Corporation

    SILICON RECTIFIER GQ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BYX42-300

    Abstract: BYX42 BYX42-300R rectifier to4
    Text: BYX42 SERIES PH I L I P S INTERNATIONAL 711DÖ5b D D m b S b SbE D GDI • P H I N T -01-/7 SILICON RECTIFIER DIODES Diffused silicon rectifier diodes in DO-4 metal envelopes, intended fo r power rectifier applications. The series consists o f the following types:


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    PDF BYX42 BYX42-300 BYX42-300R 1200R. 711002b 7Z72552 711005b rectifier to4

    BYX98

    Abstract: BYX98-300R T-Oi-17 BYX98-300
    Text: BYX98 SERIES T - O l- I T PHILIPS INTERNATIONAL IPHIN TllDÖEb GQMlfcibM T1S 5bE D RECTIFIER DIODES Silicon rectifier diodes in DO-4 metal envelopes, intended for use in power rectifier applications. The series consists of the following types: Normal polarity cathode to stud : BYX98-300to 1200.


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    PDF BYX98 BYX98-300to BYX98-300R 1200R. BYX98-300 BYX98 T-Oi-17 711D0Sb 7Z722SS

    SEM 5027A

    Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
    Text: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES


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    PHS803

    Abstract: rectifier 802 D8755 IEC134 PHS801 PHS802 PHS804 ultra fast pulse generator Philips FA 153
    Text: N A UE R PHILIPS/DISCRETE ObE D • ^ 5 3 = 1 3 1 ' 00111=71 3 ■ PHS801 SERIES H t - 0 3 - I 9 ULTRA FAST RECOVERY RECTIFIER DIODES The PHS801 series devices are glass-passivated, high efficiency silicon rectifier diodes featuring low


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    PDF PHS801 PHS801, PHS802, PHS803 PHS804. M1572 rectifier 802 D8755 IEC134 PHS802 PHS804 ultra fast pulse generator Philips FA 153

    BY509

    Abstract: diode BY509 GQ11G1S 7Z82239 T-03-09 T0309
    Text: mz N AMER PHILIPS /DISCRETE QbE D u_ _ ^53^31 GQ11Q1S 4 • : B YO ua T-03-09 SILICON E.H.T. SOFT-RECOVERY RECTIFIER DIODE E .H .T . rectifier diode in a glass envelope intended fo r use in high-voltage applications such as m u lti­ pliers, e.g. tripler circuits. The device features non-snap-off characteristics. Because o f the smallness of


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    PDF GQ11G1S T-03-09 BY509 7Z82240 BY509 diode BY509 7Z82239 T-03-09 T0309

    2n3773 power Amplifier circuit diagrams

    Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
    Text: RCA Power Devices This DATABOOK contains com­ plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete


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    PDF AN-6671 G4000) G4000 2n3773 power Amplifier circuit diagrams SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U

    11E2

    Abstract: 11E4 11E1
    Text: SILICON RECTIFIER DIODE i a / ioo~ 11E1 11E2 11E4 4 oov FEATURES ° Miniature Size v j/— ° Low Forward Voltage Drop ° Low Reverse Leakage Current 0.7C027 0.5 .020) High Surge Capability ° 26mm and 52mm Inside Tape Spacing Package Available DIA 2.7(.106)d i a


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    PDF bblS123 11E2 11E4 11E1

    Untitled

    Abstract: No abstract text available
    Text: Silicon Power Rectifier 20 Series Dim Millimeter Inches Minimum Maximum Minimum Maximum Notes Notes: 1. 1 0 -3 2 UNF3A 2. Full threads within 2 1 /2 threads 3. Standard Polarity. Stud Is Cathode Reverse Polarity: Stud is Anode A B C D E F 6 H J M N P 1 7437


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    PDF D0203AA S2020 S2040

    Untitled

    Abstract: No abstract text available
    Text: m M m m Chatsworth, CA ic m m s e m i P r o g r e s s P o w e re d b y T e ch no lo gy 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818) 701-4939 Features • • • • 1 Amp Silicon Rectifier 50 to 1000 Volts For Surface Mount Applications


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    PDF DO-214AC

    C701

    Abstract: c701 scr 7377 AGT Thyristor dissipator C701PM C701PN C701PA C701PB C701PC
    Text: G E CO/ S T A T I C GE-SPCO PtilR CMPNT 3Ô7HS04 DGGQCH? T H 6 E S P 34E D High Power 53mm Silicon Controlled Rectifier I A / V Static Power Component Operation Mah>emJ,A USA 300 T - 2 5 - 2 - 1 2000 PG 6.050A 9/1/88 C701 AM PLIFY IN G G A TE The C70J Reverse Blocking Thyristor now has extended voltage blocking


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    PDF 7HS04 SF1154, G322L LS2037 SFU54 G322L, C701 c701 scr 7377 AGT Thyristor dissipator C701PM C701PN C701PA C701PB C701PC

    Untitled

    Abstract: No abstract text available
    Text: 2bE D INTERNATIONAL RECTIFIER • 4fl5S4S2 GQ1071Q □ ■ International t o i Rectifier Inverter Type Thyristors 16 TO 80 AM PS R M S Part number 16RIF10W15 16RIF20W15 16RIF40W15 16RIF60W15 16RIF10W20 16RIF20W20 16RIF40W20 16RIF60W20 20RIF10W15 20RIF20W15


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    PDF GQ1071Q 16RIF10W15 16RIF20W15 16RIF40W15 16RIF60W15 16RIF10W20 16RIF20W20 16RIF40W20 16RIF60W20 20RIF10W15

    Untitled

    Abstract: No abstract text available
    Text: isocon COnPONENTS LTD MSE D • MûôbSlO GQQQE34 =1 HIISO 'pz//-?5 H igh Speed, H igh G ain C ouple rs continued Propagation Delay Time Part Number 6N138 6N139 ICPL2730 ICPL2731 4N45 4N46 Current Typ*cal M IN < % I IN R Z I Features Specified Input Current


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    PDF GQQQE34 6N138 6N139 ICPL2730 ICPL2731 300Kbit/s 40Current IS-74 16mAn

    IRF540 n-channel MOSFET

    Abstract: GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R
    Text: I R , „-riJ- L . ,», IGBT, HEXFET, HEXSense and Logic Level Die in t e r n a t io n a l - INTERNATIONAL R E C T I F I E R StE D • QD102tib ? ■ IGBTs, HEXFET, HEXSENSE and LOGIC LEVEL HEXFET DIE ^ - q/-OS~ International Rectifier now support Die and Wafer sales from their European Headquarters at Oxted, England.


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    PDF QD102t IRF540 n-channel MOSFET GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R

    B857

    Abstract: water flow sensor "water Flow Sensor" silicon rectifier gq b859 SKWD7000 U4T DIODE B-857
    Text: S1E D • Û13bb71 G003fiTb Û4T m Z Z K G s e MIKRDN SEMIKRON INC V rsm/V If a v rrm V SKWD 7 0 0 0 /0 2 SKWD 7 0 0 0 /0 4 SKWD 7 0 0 0 /0 6 200 400 600 Symbol Voiw = 4 l/min ; Tw = 40 °C; ED = 100% Voiw = 8 l/min Ifsm Tvj Tvj Tvj Tvj = = = = 40 °C 180°C


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    PDF 13bb71 10PA2s fll3bb71 T-55T SKWD7000 B8-59 B857 water flow sensor "water Flow Sensor" silicon rectifier gq b859 U4T DIODE B-857

    U9024N

    Abstract: BSS 250 IRFR P-Channel MOSFET
    Text: P D - 9.1506 International IGR Rectifier PRELIMINARY 1RFR/U9024N HEXFET Power MOSFET Ultra Low On-Resistance P-Channel Surface Mount IRFR9024N Straight Lead (IRFU9024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Vdss = -55V RDS(on) = 0.175Í2


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    PDF IRFR9024N) IRFU9024N) 1RFR/U9024N 4A5545E 002flL07 U9024N BSS 250 IRFR P-Channel MOSFET

    IEC60-2

    Abstract: No abstract text available
    Text: GENERAL EXPLANATORY NOTES RECTIFIER DIODES REVERSE RECOVERY When a semiconductor rectifier diode has been conducting in the forward direction sufficiently long to establish the steady state, there will be a charge due to minority carriers present. Before the device can


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    Untitled

    Abstract: No abstract text available
    Text: T PD 9.1508A International IG R Rectifier IR L M S 1503 PRELIMINARY HEXFET Power MOSFET • Generation V Technology • Micro6 Package Style • Ultra Low Rds on • N-Channel MOSFET Voss = 30V R o S (o n ) = 0 . 1 0 Q Description Fifth Generation H E X F E T s from international Rectifier


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    PDF 554S2

    DD6120

    Abstract: DD6120H DD6120S DD6120V DD6121 DD6123 DD6126
    Text: ELEK LTD 2 5 j\ fil D 81C St.07G13 0000055 fl ~ 00055 ILUCB D _ _ DD6120 SERIES S IL IC O N D IF F U S E D J U N C T IO N P R E S S -F IT R E C T IF IE R S The D D 6 1 2 0 series are case rated, silicon diffused junction, medium current press-fit rectifiers. They conform to B S S O - 4 0 , J E D E C D O -21 and IE C A 6 outlines.


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    PDF Sti07G13 DD6120 BSSO-40, DO-21 DD6120H DD6120S DD6120V DD6121 DD6123 DD6126

    100v 3A silicon controlled rectifier

    Abstract: da1002 DA1000 DA1001
    Text: LUCAS S T A B I L I T Y ELEK LTD SfciQ?013 011_ J> UCAS 81C 00001 0G0Q001 ? « LU C B PRODUCTS D A1000 CONTROLLED AVALANCHE RECTIFIERS DA1001 6 0 -150V DA100Z PEAK REVERSE VOLTAGE The DA10 0 0 /1 /2 controlled avalanche rectifiers are silicon diffused junction


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    PDF ---81C 0-150V DA1000 DA1001 DA100Z DA1000/1/2 DO-15 DA1002 100v 3A silicon controlled rectifier da1002

    D10de

    Abstract: IN4247 MIL-S-19500E IN5618 1N4245 1N4249 1N5618 1N5620 1N5622 1n4247 substitution
    Text: MIL SPECS 44E J> • 0000155 0032^04 1 ■IIIILS INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by ^ 5 ^3 MIL-S-19500/286D SUPERSEDING MIL-S-19500/286C 6 March 1970 MILITARY SPECIFICATION


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    PDF HIL-S-19500/286D MIL-S-19500/286C 1N4245 1N4249 1H5614. 1NS616. 1N5618, 1N5620, 1N5622 MIL-S-19500/427 D10de IN4247 MIL-S-19500E IN5618 1N5618 1N5620 1n4247 substitution

    250-28UNF-2B

    Abstract: 250-28UNF VV-I-530 1N5597 corona discharge circuit BIDDLE PDA FOR JANTX GRADE DEVICE ic 4046 1N5600 kvr 10 621
    Text: MIL SP ECS 000 • 0000125 0031012 3 ■ M I L S The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 February 1992 I 1NCH-POUNO MIL-S-19500/404B 15 November 1991 SUPERSEDING MIL-S-1950Q/404A 6 Apri I 1971


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    PDF MIL-S-19500/404B MIL-S-1950Q/404A 1N5597, 1N5600, 1N5603, MIL-S-19500. 250-28UNF-2B 250-28UNF VV-I-530 1N5597 corona discharge circuit BIDDLE PDA FOR JANTX GRADE DEVICE ic 4046 1N5600 kvr 10 621

    Untitled

    Abstract: No abstract text available
    Text: PD 9.871 A International S»1 Rectifier IRF7101 H EXFET Pow er M O SFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dual N-Channel M OSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching S1H


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    PDF IRF7101 GGEbH72 5545E

    Untitled

    Abstract: No abstract text available
    Text: International IOR Rectifier Provisional Data Sheet No. PD-9.720B REPETITIV E AVALANCHE AND d v /d t RATED IRHN7150 IRHN8150 HEXFET TRANSISTOR N -CH A N N EL M EGA RAD HARD 100 Volt, 0.0550, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAO HARD technology


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    PDF IRHN7150 IRHN8150 Q0B5004

    Untitled

    Abstract: No abstract text available
    Text: PD 9.1437A International K 3R Rectifier IRF9540N PRELIMINARY H EXFET Pow er M O SFE T • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated V q ss = -1 0 0 V F b s o n = 0 . 1 1 7 Q


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    PDF IRF9540N