PA 0016 PIONEER
Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
Text: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete
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OCR Scan
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J-23548
K28742
PA 0016 PIONEER
Pioneer PA 0016
transistors br 6822
MPF104
I9951D
Johnson motor 2 607 022 013
2SK109 equivalent
V01000J
DG5043CK
IRF4431
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74451
Abstract: SiE822DF-T1-E3 SiE822DF-T1-GE3
Text: SiE822DF Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
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SiE822DF
2002/95/EC
11-Mar-11
74451
SiE822DF-T1-E3
SiE822DF-T1-GE3
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PDF
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74451
Abstract: SiE822DF-T1-E3 SiE822DF-T1-GE3
Text: SiE822DF Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
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SiE822DF
2002/95/EC
18-Jul-08
74451
SiE822DF-T1-E3
SiE822DF-T1-GE3
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR832DP Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR832DP
18-Jul-08
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR401DP www.vishay.com Vishay Siliconix Dual P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the
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SiR401DP
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: SiE822DF Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
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Original
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SiE822DF
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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7445-1
Abstract: No abstract text available
Text: SiE822DF Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
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Original
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SiE822DF
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
7445-1
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Si7625DN
Abstract: mosfet 4430 si7625 S10-2503
Text: SPICE Device Model Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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Si7625DN
S10-2503-Rev.
01-Nov-10
mosfet 4430
si7625
S10-2503
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PDF
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Untitled
Abstract: No abstract text available
Text: SiE822DF Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
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Original
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SiE822DF
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Si7858BDP
Abstract: No abstract text available
Text: SPICE Device Model Si7858BDP Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si7858BDP
18-Jul-08
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PDF
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Untitled
Abstract: No abstract text available
Text: SiE822DF Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
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Original
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SiE822DF
2002/95/EC
11-Mar-11
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si4497
Abstract: No abstract text available
Text: SPICE Device Model Si4497DY Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si4497DY
18-Jul-08
si4497
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0745
Abstract: No abstract text available
Text: SPICE Device Model SiR834DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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SiR834DP
18-Jul-08
0745
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR401DP www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the
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SiR401DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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74422
Abstract: No abstract text available
Text: New Product SiE830DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY • Extremely Low Qgd WFET Technology for Low Switching Losses RoHS • Ultra Low Thermal Resistance Using COMPLIANT ® Top-Exposed PolarPAK Package for Double-Sided Cooling
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SiE830DF
08-Apr-05
74422
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Untitled
Abstract: No abstract text available
Text: IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.190 Qg (Max.) (nC) 150 Qgs (nC) 44 Qgd (nC) 72 Configuration
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IRFP23N50L,
SiHFP23N50L
O-247
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiS415DNT www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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SiS415DNT
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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irfp23n50
Abstract: D25D
Text: IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.190 Qg (Max.) (nC) 150 Qgs (nC) 44 Qgd (nC) 72 Configuration
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IRFP23N50L,
SiHFP23N50L
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
irfp23n50
D25D
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PDF
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74451
Abstract: SiE822DF-T1-E3
Text: New Product SiE822DF Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using RoHS Top-Exposed PolarPAK® Package for COMPLIANT Double-Sided Cooling • Leadframe-Based New Encapsulated Package
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SiE822DF
08-Apr-05
74451
SiE822DF-T1-E3
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IRFP23N50L
Abstract: SiHFP23N50L 91209 irfp23n50
Text: IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.190 Qg (Max.) (nC) 150 Qgs (nC) 44 Qgd (nC) 72 Configuration
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IRFP23N50L,
SiHFP23N50L
O-247
18-Jul-08
IRFP23N50L
91209
irfp23n50
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si4491EDY www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C
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Original
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Si4491EDY
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si4483ADY www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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Si4483ADY
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.190 Qg (Max.) (nC) 150 Qgs (nC) 44 Qgd (nC) 72 Configuration
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Original
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IRFP23N50L,
SiHFP23N50L
2002/95/EC
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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70190
Abstract: 74451 SiE822DF-T1-E3
Text: New Product SiE822DF Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using RoHS Top-Exposed PolarPAK® Package for COMPLIANT Double-Sided Cooling • Leadframe-Based New Encapsulated Package
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Original
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SiE822DF
18-Jul-08
70190
74451
SiE822DF-T1-E3
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PDF
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