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    SIR16 Price and Stock

    Vishay Siliconix SIR165DP-T1-GE3

    MOSFET P-CH 30V 60A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIR165DP-T1-GE3 Reel 15,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.59176
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    SIR165DP-T1-GE3 Cut Tape 1,619 1
    • 1 $1.57
    • 10 $1.289
    • 100 $1.0022
    • 1000 $0.69198
    • 10000 $0.69198
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    Vishay Siliconix SIR167DP-T1-GE3

    MOSFET P-CH 30V 60A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIR167DP-T1-GE3 Reel 12,000 3,000
    • 1 -
    • 10 -
    • 100 -
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    • 10000 $0.38048
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    SIR167DP-T1-GE3 Cut Tape 6,192 1
    • 1 $1.01
    • 10 $0.828
    • 100 $0.6444
    • 1000 $0.44492
    • 10000 $0.44492
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    Vishay Siliconix SIR164DP-T1-GE3

    MOSFET N-CH 30V 50A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIR164DP-T1-GE3 Reel 3,000 3,000
    • 1 -
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    • 10000 $0.525
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    SIR164DP-T1-GE3 Cut Tape 1,515 1
    • 1 $1.4
    • 10 $1.145
    • 100 $0.8908
    • 1000 $0.61509
    • 10000 $0.61509
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    SIR164DP-T1-GE3 Digi-Reel 1
    • 1 $1.4
    • 10 $1.145
    • 100 $0.8908
    • 1000 $0.61509
    • 10000 $0.61509
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    Vishay Siliconix SIR164ADP-T1-GE3

    MOSFET N-CH 30V 35.9A/40A PPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIR164ADP-T1-GE3 Cut Tape 2,824 1
    • 1 $1.61
    • 10 $1.023
    • 100 $0.6832
    • 1000 $0.49025
    • 10000 $0.49025
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    SIR164ADP-T1-GE3 Digi-Reel 1
    • 1 $1.61
    • 10 $1.023
    • 100 $0.6832
    • 1000 $0.49025
    • 10000 $0.49025
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    SIR164ADP-T1-GE3 Reel 3,000
    • 1 -
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    • 1000 -
    • 10000 $0.3875
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    Vishay Siliconix SIR166DP-T1-GE3

    MOSFET N-CH 30V 40A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIR166DP-T1-GE3 Cut Tape 2,390 1
    • 1 $1.44
    • 10 $1.178
    • 100 $0.9163
    • 1000 $0.63266
    • 10000 $0.63266
    		Buy Now
    SIR166DP-T1-GE3 Digi-Reel 1
    • 1 $1.44
    • 10 $1.178
    • 100 $0.9163
    • 1000 $0.63266
    • 10000 $0.63266
    		Buy Now
    SIR166DP-T1-GE3 Reel 3,000
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.54
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    Find more SIR16 price and stock on Findchips.com

    SIR16 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIR164ADP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 35.9A/40A PPAK Original PDF
    SIR164DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 50A 8-SOIC Original PDF
    SIR164DP-T1-RE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 50A POWERPAKSO-8 Original PDF
    SIR165DP-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHAN 30V POWERPAK SO-8 Original PDF
    SIR166DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 40A 8-SOIC Original PDF
    SIR167DP-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHAN 30V POWERPAK SO-8 Original PDF
    SIR168DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 40A PPAK 8SOIC Original PDF

    SIR16 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR166DP Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) FEATURES ID (A)a RDS(on) (Ω) 30 Qg (Typ.) g 0.0032 at VGS = 10 V 40 0.0040 at VGS = 4.5 V 40g 25 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF SiR166DP 2002/95/EC SiR166DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SIR164DP

    Abstract: A7282 65060 spice model 740
    Text: SPICE Device Model SiR164DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR164DP 18-Jul-08 A7282 65060 spice model 740

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR168DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR168DP 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SiR168DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0044 at VGS = 10 V 40 0.0059 at VGS = 4.5 V 40 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF SiR168DP 2002/95/EC SiR168DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR164DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0025 at VGS = 10 V 50 0.0032 at VGS = 4.5 V 50 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET


    Original     		PDF SiR164DP 2002/95/EC SiR164DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SiR168DP-T1-GE3

    Abstract: No abstract text available
    Text: SiR168DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0044 at VGS = 10 V 40 0.0059 at VGS = 4.5 V 40 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF SiR168DP 2002/95/EC SiR168DP-T1-GE3 18-Jul-08

    AN609

    Abstract: No abstract text available
    Text: SiR168DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiR168DP AN609, 22-Jul-09 AN609

    sir166

    Abstract: 4558 m 4558 4558 C AN609 305510
    Text: SiR166DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiR166DP AN609, 11-Jan-10 sir166 4558 m 4558 4558 C AN609 305510

    sir166

    Abstract: d 2092 SIR166DP v3320
    Text: SPICE Device Model SiR166DP Vishay Siliconix N-Channel 30-V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR166DP 18-Jul-08 sir166 d 2092 v3320

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR166DP Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) FEATURES ID (A)a RDS(on) (Ω) 30 Qg (Typ.) g 0.0032 at VGS = 10 V 40 0.0040 at VGS = 4.5 V 40g 25 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF SiR166DP 2002/95/EC SiR166DP-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR166DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR166DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR164DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0025 at VGS = 10 V 50 0.0032 at VGS = 4.5 V 50 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET


    Original     		PDF SiR164DP 2002/95/EC SiR164DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    sir166

    Abstract: SiR166DP
    Text: New Product SiR166DP Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) FEATURES ID (A)a RDS(on) (Ω) 30 Qg (Typ.) g 0.0032 at VGS = 10 V 40 0.0040 at VGS = 4.5 V 40g 25 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF SiR166DP 2002/95/EC SiR166DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 sir166

    SiR168DP-T1-GE3

    Abstract: No abstract text available
    Text: SiR168DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0044 at VGS = 10 V 40 0.0059 at VGS = 4.5 V 40 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF SiR168DP 2002/95/EC SiR168DP-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SiR168DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0044 at VGS = 10 V 40 0.0059 at VGS = 4.5 V 40 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF SiR168DP 2002/95/EC SiR168DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SiR164DP

    Abstract: TB-17
    Text: New Product SiR164DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0025 at VGS = 10 V 50 0.0032 at VGS = 4.5 V 50 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET


    Original     		PDF SiR164DP 2002/95/EC SiR164DP-T1-GE3 18-Jul-08 TB-17

    sir166

    Abstract: 65471 sir166dp
    Text: New Product SiR166DP Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) FEATURES ID (A)a RDS(on) (Ω) 30 Qg (Typ.) g 0.0032 at VGS = 10 V 40 0.0040 at VGS = 4.5 V 40g 25 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF SiR166DP 2002/95/EC SiR166DP-T1-GE3 18-Jul-08 sir166 65471

    8255 application

    Abstract: 8255 application note AN609 SiR164DP 18762M 208255
    Text: SiR164DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiR164DP AN609, 09-Apr-09 8255 application 8255 application note AN609 18762M 208255

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR166DP Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) FEATURES ID (A)a RDS(on) (Ω) 30 Qg (Typ.) g 0.0032 at VGS = 10 V 40 0.0040 at VGS = 4.5 V 40g 25 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF SiR166DP 2002/95/EC SiR166DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiR168DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0044 at VGS = 10 V 40 0.0059 at VGS = 4.5 V 40 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF SiR168DP 2002/95/EC SiR168DP-T1-GE3 11-Mar-11

    CSR Bluetooth 4.0

    Abstract: 7 bit hamming code ARM7 instruction set for atmel circuit diagram of voice recognition crystal oscilator 600070 4.20 mA Transmitter 8 bit data encoder ARM7 instruction set BT 169 D
    Text: Features • Implements Bluetooth specification on short distance wireless communication in 2.4 GHz ISM band • Provides 1 Mbps aggregate bit rate • Supports Frequency Hopping Spread Spectrum physical-layer interface to dedicated transceiver with frequency hopping algorithm implemented in hardware


    Original     		PDF 11/99/xM CSR Bluetooth 4.0 7 bit hamming code ARM7 instruction set for atmel circuit diagram of voice recognition crystal oscilator 600070 4.20 mA Transmitter 8 bit data encoder ARM7 instruction set BT 169 D

    samsung r580

    Abstract: BA41-01174A marvell 88E8059 88E8059 SMSC mec1308 TPS51125 mec1308 tps51125 SCHEMATIC smd diode code MK a8 c917
    Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 8. Block Diagram and Schematic D C B A 4 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL


    Original     		PDF BA41-01174A 100nF MIC502 B4013AM423-32 MIC500 SOM4013SL-G443-C1033 samsung r580 marvell 88E8059 88E8059 SMSC mec1308 TPS51125 mec1308 tps51125 SCHEMATIC smd diode code MK a8 c917

    ASM1442

    Abstract: bd82hm55 SMSC mec1308 mec1308 Intel hm55 JLCD500 HM55 CRB smsc mec1308-nu LTST-C193TBKT-AC N11X-GE1
    Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 8. Block Diagram and Schematic D C B A 4 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL


    Original     		PDF BREMEN-15C/17C BREMEN-15C/17C BA41-xxxxxA 100nF C1114 ASM1442 bd82hm55 SMSC mec1308 mec1308 Intel hm55 JLCD500 HM55 CRB smsc mec1308-nu LTST-C193TBKT-AC N11X-GE1

    MX25L1605DM2I-12G

    Abstract: samsung R540 service AR5B95 samsung r730 NP303-CQS-2 mx25l1605dm2i NP303-CQS-2-F1 88E8040-A0-NNB2-C000 bremen-ul 88E8040-A0-NNB2C000
    Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 6. Material List 6-1. 15" Material List Level .1 .1 .1 .1 .1 .1 .1 .1 .1 Code 0203-001869


    Original     		PDF BA41-01201A BA59-02572A WLAN-802 11BGN 125MM R530/R730 BA99-07566A MX25L1605DM2I-12G samsung R540 service AR5B95 samsung r730 NP303-CQS-2 mx25l1605dm2i NP303-CQS-2-F1 88E8040-A0-NNB2-C000 bremen-ul 88E8040-A0-NNB2C000