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    Vishay Siliconix SIS330DN-T1-GE3

    MOSFET N-CH 30V 35A PPAK1212-8
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    DigiKey SIS330DN-T1-GE3 Reel 3,000
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    Vishay Intertechnologies SIS330DN-T1-GE3

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    Bristol Electronics SIS330DN-T1-GE3 2,447
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    Quest Components SIS330DN-T1-GE3 1,957
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    SIS330 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIS330DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 35A 1212-8 Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: New Product SiS330DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)f 0.0056 at VGS = 10 V 35g 0.0075 at VGS = 4.5 V 35g • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiS330DN 2002/95/EC SiS330DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    2894 spice

    Abstract: sis330
    Text: SPICE Device Model SiS330DN Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiS330DN 18-Jul-08 2894 spice sis330

    sis330

    Abstract: No abstract text available
    Text: New Product SiS330DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)f 0.0056 at VGS = 10 V 35g 0.0075 at VGS = 4.5 V 35g • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiS330DN 2002/95/EC SiS330DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sis330

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS330DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)f 0.0056 at VGS = 10 V 35g 0.0075 at VGS = 4.5 V 35g • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiS330DN 2002/95/EC SiS330DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS330DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiS330DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    24426

    Abstract: sis330
    Text: SiS330DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiS330DN AN609, 2477m 0412m 0384m 6738m 9857m 2690m 8629u 24426 sis330

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS330DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)f 0.0056 at VGS = 10 V 35g 0.0075 at VGS = 4.5 V 35g • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiS330DN 2002/95/EC SiS330DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    sis330

    Abstract: No abstract text available
    Text: New Product SiS330DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)f 0.0056 at VGS = 10 V 35g 0.0075 at VGS = 4.5 V 35g • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiS330DN 2002/95/EC SiS330DN-T1-GE3 11-Mar-11 sis330

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836