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SKM150GB12T4 Price and Stock

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SEMIKRON SKM150GB12T4G Igbt Array & Module Transistor, Dual N Channel, 223 A, 1.85 V, 1.2 Kv, Module Rohs Compliant: Yes \|Semikron SKM150GB12T4G
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SKM150GB12T4G	Bulk	46		1	1 $225.9 10 $201.05 100 $201.05 1000 $201.05 10000 $201.05	Buy Now
Richardson RFPD	SKM150GB12T4G				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
SEMIKRON SKM150GB12T4 Igbt, Module, 1.2Kv, 232A, Semitrans 2; Continuous Collector Current:232A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:175°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes \|Semikron SKM150GB12T4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SKM150GB12T4	Bulk	33		1	1 $196.33 10 $196.33 100 $196.33 1000 $196.33 10000 $196.33	Buy Now
Richardson RFPD	SKM150GB12T4				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
SEMIKRON SKM150GB12T4 22892040 Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SKM150GB12T4 22892040		34		1	1 $127.8 10 $105.62 100 $105.62 1000 $105.62 10000 $105.62	Buy Now
SEMIKRON SKM150GB12T4G 22892050 Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 172A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SKM150GB12T4G 22892050				1	1 $197.52 10 $158.44 100 $158.44 1000 $158.44 10000 $158.44	Get Quote
SEMIKRON SKM150GB12T4G-WITHOUT-SILICONE-GEL POWER IGBT TRANSISTOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Richardson RFPD	SKM150GB12T4G-WITHOUT-SILICONE-GEL				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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SKM150GB12T4 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SKM150GB12T4		Semikron	IGBT4 Modules		Original	PDF
SKM150GB12T4G		Semikron	IGBT4 Modules		Original	PDF

SKM150GB12T4 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: SKM150GB12T4G Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 223 A Tc = 80 °C 172 A 150 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	PDF	SKM150GB12T4G
Untitled Abstract: No abstract text available Text: SKM150GB12T4G Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 223 A Tc = 80 °C 172 A 150 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules SKM150GB12T4G VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V	Original	PDF	SKM150GB12T4G
SKM150GB12T4 Abstract: 13mJ SKM150 Text: SKM150GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMITRANS 2 Fast IGBT4 Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 189	Original	PDF	SKM150GB12T4 SKM150GB12T4 13mJ SKM150
Untitled Abstract: No abstract text available Text: SKM150GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMITRANS 2 Fast IGBT4 Modules SKM150GB12T4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V	Original	PDF	SKM150GB12T4 SKM150GB12T4 E63532
SKM150GB12T4 Abstract: Semitrans* IGBT Text: SKM150GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMITRANS 2 Fast IGBT4 Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 189	Original	PDF	SKM150GB12T4 SKM150GB12T4 Semitrans* IGBT
Untitled Abstract: No abstract text available Text: SKM150GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMITRANS 2 Fast IGBT4 Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C	Original	PDF	SKM150GB12T4
SKM150GB12T4G Abstract: Diode semikron 103 Text: SKM150GB12T4G Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 223 A Tc = 80 °C 172 A 150 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	PDF	SKM150GB12T4G App2009 SKM150GB12T4G Diode semikron 103
Untitled Abstract: No abstract text available Text: SKM150GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMITRANS 2 Fast IGBT4 Modules SKM150GB12T4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V	Original	PDF	SKM150GB12T4
453gb12e4s Abstract: SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c Text: Application Note AN-9001 Revision: 01 Issue Date: 2009-03-01 Prepared by: Dr. Arendt Wintrich Key Words: IGBT, Trench4, Switching Behaviour, Cross Reference IGBT4 and free wheeling diode CAL4 in IGBT modules General properties . 1	Original	PDF	AN-9001 453gb12e4s SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c