SM56V16800
Abstract: MSM56V16800E-8
Text: E2G1053-18-54 O K I Semiconductor M SM 56V16800E sversion:,ul1998 2-Bank x 1,048,576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The M SM 56V16800E is a 2-bank x 1,048,576-word x 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and
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E2G1053-18-54
56V16800E
576-Word
56V16800E
MSM56V16800E
PII44-P-400-0
SM56V16800
MSM56V16800E-8
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SM56V16800
Abstract: transistor 305 56V16800 active suspension BA RV 2H24D d0117
Text: OKI Semiconductor SM56V16800 2-Bank x 1,048,576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The M SM 56V16800 is a 2-b an k x 1,048,576-w ord x 8-bit synchronous D ynam ic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V, and the inputs and outputs are LVTTL Compatible.
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MSM56V16800
576-Word
MSM56V16800
cycles/64
b724240
SM56V16800
transistor 305
56V16800
active suspension
BA RV
2H24D
d0117
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