Untitled
Abstract: No abstract text available
Text: Ceramic TopLooker for high light output, designed for camera flash application Lead Pb Free Product - RoHS Compliant LUW C9EP CERAMOSTM Released Besondere Merkmale • Gehäusetyp: SMD Keramik Gehäuse mit diffusem Silikonverguss • Typischer Lichtstrom: 84 lm bei 500 mA
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4000/Rolle,
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Untitled
Abstract: No abstract text available
Text: Ceramic TopLooker for high light output, designed for camera flash application Lead Pb Free Product - RoHS Compliant LUW C9EP CERAMOSTM Released Besondere Merkmale • Gehäusetyp: SMD Keramik Gehäuse mit diffusem Silikonverguss • Typischer Lichtstrom: 84 lm bei 500 mA
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PDF
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4000/Rolle,
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Untitled
Abstract: No abstract text available
Text: Ceramic TopLooker for high light output, designed for camera flash application Lead Pb Free Product - RoHS Compliant LUW C9EP CERAMOSTM Released Besondere Merkmale • Gehäusetyp: SMD Keramik Gehäuse mit diffusem Silikonverguss • Typischer Lichtstrom: 84 lm bei 500 mA
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4000/Rollely
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NL322522T-1R5K-S
Abstract: NL322522T-6R8K-S NL453232T-101K-S NLC322522T-681 NL322522T-330K-S NL453232T-102K-S NL322522T-150K NL322522T-680K-S NL322522T-100K-S NL322522T-8R2K-S
Text: YAGEO CORPORATION SMD INDUCTOR / BEADS NL/NLC Series Wound Chip Inductors APPLICATIONS Microtelevisions, liquid crystal televisions, video cameras, portable VCRs, car radios, car stereos, thin tape radios, television tuners, mobile telephones, radio and other electronic
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55MHz
NL453232T-4R7K-S
370mA
96MHz
1000mV
50MHz
NL453232T-3R9K-S
NL453232T-3R3K-S
355mA
NL322522T-1R5K-S
NL322522T-6R8K-S
NL453232T-101K-S
NLC322522T-681
NL322522T-330K-S
NL453232T-102K-S
NL322522T-150K
NL322522T-680K-S
NL322522T-100K-S
NL322522T-8R2K-S
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NL252018T-4R7
Abstract: NL453232T-4R7K-S NL322522T-100K-S NL322522T-R18K NL322522T-5R6K-S NL453232T-331K-S NL453232T-150K-S YAGEO NL453232T-561K NL453232T-R27M
Text: YAGEO CORPORATION SMD INDUCTOR / BEADS NL Series Wound Chip Inductors APPLICATIONS Microtelevisions, liquid crystal televisions, video cameras, portable VCRs, car radios, car stereos, thin tape radios, television tuners, mobile telephones, radio and other electronic devices.
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24Hrs.
1000Hrs.
NL252018T-4R7
NL453232T-4R7K-S
NL322522T-100K-S
NL322522T-R18K
NL322522T-5R6K-S
NL453232T-331K-S
NL453232T-150K-S
YAGEO
NL453232T-561K
NL453232T-R27M
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BSH103 MARKING
Abstract: TRANSISTOR SMD MARKING CODE DK BSH103 TRANSISTOR SMD CODE 339 marking code UL SMD Transistor 339 marking code SMD transistor MBK504 smd transistor 547 transistor smd .PB 8 transistor smd PB 8
Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D088 BSH103 N-channel enhancement mode MOS transistor Product specification Supersedes data of 1998 Jan 30 File under Discrete Semiconductors, SC13b 1998 Feb 11 Philips Semiconductors Product specification
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M3D088
BSH103
SC13b
MAM273
BSH103
BSH103 MARKING
TRANSISTOR SMD MARKING CODE DK
TRANSISTOR SMD CODE 339
marking code UL SMD Transistor
339 marking code SMD transistor
MBK504
smd transistor 547
transistor smd .PB 8
transistor smd PB 8
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Q65110A9074
Abstract: osram LED of oslon all range smd code jy
Text: OSLON SSL Lead Pb Free Product - RoHS Compliant LD CP7P, LT CP7P Vorläufige Daten / Preliminary Data Besondere Merkmale • Gehäusetyp: SMD Keramik Gehäuse mit Silikonverguss und Linse • Typischer Lichtstrom: 510 mW (tief blau), 92 lm (true green) bei 350 mA
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600/Rolle,
JESD22-A114-D
Q65110A9074
osram LED of oslon all range
smd code jy
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32N50
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 32N50BU1 IXGH 32N50BU1S v CES ^C25 v CE sat «1, Symbol Test Conditions Maximum Ratings V ces Tj = 25CC to 150CC 500 v CGR T j = 25°C to 150“ C; RGE = 1 M£2 500 V v GES Continuous ±20 V v¥gem Transient ±30 V ^C25 T0 = 25°C
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OCR Scan
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32N50BU1
32N50BU1S
O-247
32N50BU1S)
32N90BU1
32NS0BU1S
B2-22
32N50
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Untitled
Abstract: No abstract text available
Text: — SPD 08N05L I nf i ne on technologies im p f° v e d SIPMOS PowerTransistor Features Product Summary • N channel Drain source voltage VDS 55 • Enhancement mode Drain-Source on-state resistance ^DS on 0.1 Q • Avalanche rated Continuous drain current
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08N05L
P-T0252
Q67040-S4134
P-T0251
SPD08N05L
SPU08N05L
Q67040-S4182-A2
S35bQ5
Q133777
SQT-89
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32N60BU1
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 32N60BU1 IXGH 32N60BU1S v CES ^C25 v CE sat »fl Maximum Ratings Symbol Test Conditions VCEs T j = 25°C to 150°C 600 V VcOR Tj = 25°C to 150°C; ROE = 1 M£2 600 V VGES Continuous ±20 V v GEM T ransient ±30 V ^C25 Tc =25°C
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OCR Scan
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PDF
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32N60BU1
32N60BU1S
O-247
B2-77
B2-78
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Untitled
Abstract: No abstract text available
Text: Nonvolatile Memory 1-Kbit E2PROM SDE 2506 Preliminary Data MOS IC Type Ordering Code Package SDE 2506 SDE 2506 K Q67100-H8441 Q 67100-H 8473 P-DIP-8 MIKROPACK SMD Features • • • • • • • • • • W ord-organized reprogram m able nonvolatile memory in n-channel floating-gate
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OCR Scan
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PDF
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Q67100-H8441
67100-H
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Untitled
Abstract: No abstract text available
Text: Infineon SPP80P06P SPB80P06P Preliminary data technologies SIPMOS Power-Transistor Features Product Summary • P-Channel Drain source voltage VDS • Enhancement mode Drain-Source on-state resistance ñ DS on • Avalanche rated Continuous drain current
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SPP80P06P
SPB80P06P
P-T0220-3-1
Q67042-S4017
P-T0263-3-2
Q67042-S4016
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IXGH24N60BU1
Abstract: 24N50 HIPERFAST IGBT WITH DIODE 24N60 IXGH24N50BU1
Text: DIXYS Prelim inary data HiPerFAST IGBT with Diode IXGH24N50BU1 IXGH24N60BU1 V CES ^C 25 V CE(sat) t,i 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Combi Pack TO-247 SMD (24N*BU1S) U Symbol Test Conditions 24N50 24N60 V CES ^ = 25 °C to 150°C 500 600
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IXGH24N50BU1
IXGH24N60BU1
24N50
24N60
24N50
HIPERFAST IGBT WITH DIODE
24N60
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Untitled
Abstract: No abstract text available
Text: SPD 08N10 I nf ine on te ch no lo g iai Preliminary Data S IP M O S P o w e r T ra n s is to r Product Summary Features Drain source voltage • N channel Drain-Source on-state resistance • Enhancement mode Continuous drain current • Avalanche rated
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08N10
SPD08N10
P-T0252
Q67040-S4126
SPU08N10
P-T0251
Q67040-S4118-A2
S35bQ5
Q133777
SQT-89
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BUZ102
Abstract: smd transistor py
Text: SIEMENS BUZ 102 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dvfdt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type Vbs BUZ102 50 V b 42 A flbston Package Ordering Code
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OCR Scan
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O-220
BUZ102
C67078-S1351-A2
BUZ102
smd transistor py
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Untitled
Abstract: No abstract text available
Text: BSS 84P In fin e o n technologies Preliminary Data SIPMOS Small-Signal-T ransislor Features Product Summary • P Channel Drain source voltage Vos • Enhancement mode -60 Drain-Source on-state resistance • Avalanche rated Continuous drain current ^DS on 8
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OT-23
Q67041-S1417
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
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smd diode 819
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S CES C25 v CE sat t Symbol Test Conditions V * CES Tj = 25°C to 150°C 600 V vt cgr Tj = 25°C to 150°C; RGE = 1 M n 600 V Maximum Ratings v GES Continuous ±20 V v GEM Transient +30 V ^C25 Tc = 25“C
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OCR Scan
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IXGH32N60AU1
IXGH32N60AU1S
O-247
32N60AU1S)
IXGH32N60AU1
IXQH32N60AU1S
XGH32N60AU1
smd diode 819
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9N80
Abstract: 8n80 BSC 031 N 06 NS 3 smd U
Text: HiPerFET Power MOSFETs IXFH 8N80 IXFH 9N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family ^DSS ^D25 800 V 800 V 8A 9A P DS on t rr 1.1 ft 250 ns o.g a 250 ns TO-247 AD (IXFH) Preliminary data D (TAB) Symbol Test Conditions Maximum Ratings
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O-247
O-247
5A/25
9N80
8n80
BSC 031 N 06 NS 3
smd U
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c608 e diode
Abstract: smd diode 46A C605 Q C605 B marking c606 c600h c608 A diode irll3303
Text: PD - 9.1379A International M R Rectifier IRLL3303 HEXFET Power MOSFET • • • • • • • Surface Mount Dynamic dv/dt Rating Logic-Level Gate Drive Fast Switching Ease of Paralleling Advanced Process Technology Ultra Low On-Resistance Vdss = 30V
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IRLL3303
T-223
C-609
c608 e diode
smd diode 46A
C605 Q
C605 B
marking c606
c600h
c608 A diode
irll3303
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s3h 02
Abstract: A1t smd sot23 a1z LMV118 avnet LMP2011 LMP2012 LMP2014 LMV771 LMV772
Text: SIS! S&I-SJ & : A m plifiers Made Simple"1 Amplifiers Made Simple ^. <& S. 2 i e | 4r is-®} tH 4 A m plifiers M ade Sim ple^- °1 ^ M A] jSL. ZI&]^. Amplifier Made Sim ple0! -2}-<§^!‘ ig t S .& ^ « 8 a] ^ • 341 SP IC E • • •§'A1®11 n # oj o.^a] ^
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LMH6703
LMH6703-&
OT23-6)
LMH6703Ã
s3h 02
A1t smd
sot23 a1z
LMV118
avnet
LMP2011
LMP2012
LMP2014
LMV771
LMV772
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24N60AU
Abstract: ixsh24n60au1 24n60au1 TO-247 weight
Text: DIXYS HiPerFAST IGBT with Diode IXSH 24N60U1 IXSH 24N60AU1 v CES ^C25 VCE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Tj = 25° C to 150° C Tj = 25°C to 150°C; RGE= 1 Mi2 600 600 V V V6ES v GEM Continuous Transient 120 ±30 V
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24N60U1
24N60AU1
IXSH24N60AU1
1999IXYS
24N60AU
ixsh24n60au1
TO-247 weight
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smd diode SM 97
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF30PC3M PyhfLig- ffl U nit-m m W eight 1.5g(Typ) 10.2 30V 30A Feature • SM D • SMD • î 2 ® V f=0.4V • Ultra-Low V f=0.4V • High lo Rating -Small-PKG • iJ 'S = À l; jS î § M
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OCR Scan
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STO-220
DF30PC3M
smd diode SM 97
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IXGH32N60AU1
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S vCES ^C25 v CE sat Combi Pack t Symbol Test C onditions V yces Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RQE= 1 MQ 600 V VGES Continuous ±20 V V GEM Transient ±30 V ^C25 Tc = 25°C ^C90
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OCR Scan
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32N60AU1
32N60AU1S
4b6b22b
IXGH32N60AU1
IXGH32N60AU1S
4bflb22b
0003bQb
IXGH32N60AU1
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931 diode smd
Abstract: g20n60
Text: □ IXYS V CES IXGH 24N60AU1 IXGH 24N60AU1S ^C25 V CE sat t fi HiPerFAST IGBT with Diode Combi Pack Symbol Test Conditions Maximum Ratings V CES Tj = 25°C to 150°C 600 V V* CGR Tj = 25°C to 150°C; RGE = 1 MÎ2 600 V vWGES Continuous ±20 V V* GEM Transient
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OCR Scan
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PDF
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24N60AU1
24N60AU1S
O-247
24N60AU1S)
IXGH24N60AU1
IXGH24N60AU1S
4bflb22t.
931 diode smd
g20n60
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