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    SMD TRANSISTOR 17D Search Results

    SMD TRANSISTOR 17D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR 17D Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    diode BB102

    Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet
    Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,


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    ADE-A08-003G diode BB102 RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet PDF

    TEMIC K153P

    Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
    Text: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2


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    WN1053 WN1087-18R WN1087-TR1 WN1090 WN1125 WN1142 WN1158-TA WN1165-TR1 WN1170 WN934 TEMIC K153P TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910 PDF

    CDSCB10M7GA136

    Abstract: rt data saw 433 rx tx switch 433 BFP450 10dBm saw transistor transmitter CB9 smd transistor Ceramic filter 107ma TH7122.1 murata 10.7MA ceramic filter SFECF10M7HA00
    Text: Application Note Transceiver TH7122x External PA, LNA and TX/RX switch TH7122 and TH71221 with External PA and LNA The output power and the sensitivity of TH7122x transceivers for SRD are enough for many applications. They can deliver up to 10dBm output power and have a sensitivity of up to -105dBm in FSK mode.


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    TH7122x TH7122 TH71221 TH7122x 10dBm -105dBm AN7122x Feb/07 CDSCB10M7GA136 rt data saw 433 rx tx switch 433 BFP450 10dBm saw transistor transmitter CB9 smd transistor Ceramic filter 107ma TH7122.1 murata 10.7MA ceramic filter SFECF10M7HA00 PDF

    ST 0841

    Abstract: ST 0721 0721 marking st 12089 MARKING code mf stmicroelectronics STMicroelectronics marking code 0721 J-STD-020B PD55003L-E PD55003LE TRANSISTOR SMD MARKING CODE 703
    Text: PD55003L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT =3 W mith 17dB gain@500 MHz/12.5 V ■ New leadless plastic package ■ ESD protection


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    PD55003L-E Hz/12 2002/95/EC PD55003L-E ST 0841 ST 0721 0721 marking st 12089 MARKING code mf stmicroelectronics STMicroelectronics marking code 0721 J-STD-020B PD55003LE TRANSISTOR SMD MARKING CODE 703 PDF

    PD55003L

    Abstract: ST 0721 702 TRANSISTOR smd J-STD-020B PD55003L-E SMD electrolytic capacitor ferride bead
    Text: PD55003L-E RF POWER TRANSISTOR The LdmoST Plastic FAMILY General features • Excellent thermal stability ■ Common source configuration ■ POUT =3W mith 17dB gain@500MHz/12.5V ■ New leadless plastic package ■ Esd protection ■ Supplied in tape & reel of 3K units


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    PD55003L-E 500MHz/12 2002/95/EC PD55003L-E PD5500L-E PD55003L ST 0721 702 TRANSISTOR smd J-STD-020B SMD electrolytic capacitor ferride bead PDF

    Untitled

    Abstract: No abstract text available
    Text: PD55003L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT =3 W mith 17dB gain@500 MHz/12.5 V ■ New leadless plastic package ■ ESD protection


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    PD55003L-E Hz/12 2002/95/EC PD55003L-E PDF

    SMD transistor M05

    Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
    Text: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE


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    10/2M SMD transistor M05 smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR PDF

    433.92mhz receiver

    Abstract: No abstract text available
    Text: Application Note SAW-Components Preamplifier – SAW filter section for a receiver in the ISM band @ 433.92MHz App. Note #8 Abstract: In this application a preamplifier is described. The amplifier simplifies the matching of the antenna to the SAW-filter and increases the system sensitivity by reducing the


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    92MHz D-81617 92MHz 433.92mhz receiver PDF

    smd diode order marking code stmicroelectronics

    Abstract: smd code marking HD TRANSISTOR S 838 RF Transistor s-parameter SMD TRANSISTOR MARKING 904 st smd diode marking code TRANSISTOR SMD MARKING CODES 822 smd marking code br 39 SMD NV SMD TRANSISTOR
    Text: PD55008L-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 8W with 17dB gain @ 500MHz / 12.5V ■ Integrated ESD protection ■


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    PD55008L-E 500MHz 2002/95/EC PD55008L-E smd diode order marking code stmicroelectronics smd code marking HD TRANSISTOR S 838 RF Transistor s-parameter SMD TRANSISTOR MARKING 904 st smd diode marking code TRANSISTOR SMD MARKING CODES 822 smd marking code br 39 SMD NV SMD TRANSISTOR PDF

    JESD97

    Abstract: J-STD-020B PD55008L PD55008L-E
    Text: PD55008L-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 8W with 17dB gain @ 500MHz / 12.5V ■ Integrated ESD protection ■


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    PD55008L-E 500MHz 2002/95/EC PD55008L-E JESD97 J-STD-020B PD55008L PDF

    Untitled

    Abstract: No abstract text available
    Text: PD55008L-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 8W with 17dB gain @ 500MHz / 12.5V ■ Integrated ESD protection ■


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    PD55008L-E 500MHz 2002/95/EC PD55008L-E PDF

    Untitled

    Abstract: No abstract text available
    Text: PD55008-E PD55008S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 8 W with 17dB gain @ 500 MHz/12.5 V ■ New RF plastic package PowerSO-10RF


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    PD55008-E PD55008S-E Hz/12 PowerSO-10RF PowerSO-10RF. PDF

    PD55008

    Abstract: PD55008-E PD55008S PD55008S-E PD55008STR-E PD55008TR-E AN1294
    Text: PD55008-E PD55008S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 8W with 17dB gain @ 500MHz / 12.5V ■ New RF plastic package


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    PD55008-E PD55008S-E 500MHz PowerSO-10RF PD55008 PowerSO-10RF. PD5500and PD55008-E PD55008S PD55008S-E PD55008STR-E PD55008TR-E AN1294 PDF

    PD55008

    Abstract: AN1294 J-STD-020B PD54003S-E PD55008-E PD55008S PD55008S-E PD55008STR-E PD55008TR-E
    Text: PD55008-E PD55008S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 8 W with 17dB gain @ 500 MHz/12.5 V ■ New RF plastic package PowerSO-10RF


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    PD55008-E PD55008S-E Hz/12 PowerSO-10RF PowerSO-10RF. PD55008 AN1294 J-STD-020B PD54003S-E PD55008-E PD55008S PD55008S-E PD55008STR-E PD55008TR-E PDF

    transistor smd 6z

    Abstract: smd transistor 6Z SMD Transistor 9z transistor smd 4z SMD Transistor 7z smd 93 3Z 901 704 16 08 55 PD55003TR AN1294 PD55003
    Text: PD55003-E PD55003S-E RF POWER transistor, LdmoST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 3W with 17dB gain @ 500MHz / 12.5 ■ New RF plastic package


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    PD55003-E PD55003S-E 500MHz PowerSO-10RF PD55003 PowerSO-10RF. PD55and transistor smd 6z smd transistor 6Z SMD Transistor 9z transistor smd 4z SMD Transistor 7z smd 93 3Z 901 704 16 08 55 PD55003TR AN1294 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD55003-E RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 3 W with 17dB gain @ 500 MHz / 12.5 V Description PowerSO-10RF formed lead


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    PD55003-E PowerSO-10RF PD55003-E PD55003 PowerSO-10RF. PD55003â PDF

    transistor smd po3

    Abstract: STMICROELECTRONICS MSL PACKAGES
    Text: PD55003-E RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 3 W with 17dB gain @ 500 MHz / 12.5 V Description PowerSO-10RF formed lead


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    PD55003-E PowerSO-10RF PD55003-E PD55003 PowerSO-10RF. transistor smd po3 STMICROELECTRONICS MSL PACKAGES PDF

    transistor smd po3

    Abstract: AN1294 PD54003-E PD54003S-E PD55003 PD55003-E RF Transistor s-parameter PD55003-E-E 0927 TRANSISTOR
    Text: PD55003-E PD55003S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 3 W with 17dB gain @ 500 MHz / 12.5 V ■ New RF plastic package


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    PD55003-E PD55003S-E PowerSO-10RF PD55003-E PD55003 PowerSO-10RF. PD550y transistor smd po3 AN1294 PD54003-E PD54003S-E RF Transistor s-parameter PD55003-E-E 0927 TRANSISTOR PDF

    PD55003TR

    Abstract: transistor smd po3 901 704 16 08 55 AN1294 PD55003 PD55003-E PD55003S Z1033
    Text: PD55003-E PD55003S-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 3W with 17dB gain @ 500MHz / 12.5 ■ New RF plastic package PowerSO-10RF


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    PD55003-E PD55003S-E 500MHz PowerSO-10RF PD55003 PowerSO-10RF. PD55003TR transistor smd po3 901 704 16 08 55 AN1294 PD55003-E PD55003S Z1033 PDF

    L05 SMD

    Abstract: CMP266 RNR-T45-96-B-1025 L6 PHILIPS transistor smd Sb1 BFG425W CMP401 BFG400W CMP409 CMP231
    Text: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-96-B-1025 : T.F. Buss : 10 Dec. 1996 : P.G. Transistors & Diodes, Development IMPROVED IP3 BEHAVIOUR OF THE 900MHz LOW NOISE AMPLIFIER WITH THE BFG425W


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    RNR-T45-96-B-1025 900MHz BFG425W RNR-T45-96-B-771 BFG425W 900MHz, 900MHz: CMP257 CMP383 L05 SMD CMP266 RNR-T45-96-B-1025 L6 PHILIPS transistor smd Sb1 CMP401 BFG400W CMP409 CMP231 PDF

    k 3918 TRANSISTOR

    Abstract: pin diagram of bf 494 transistor 7497 spice smd transistor 501 smd transistors 458 transistor 381 7943 RF NPN POWER TRANSISTOR C 10-12 GHZ BFG21W PMBT3904 09 18 140 9622
    Text: Philips Semiconductors 800MHz PA Driver with BFG21W 800MHz PA Driver with BFG21W Application Note JL-9803v2 Author Jarek Lucek November 8, 1998 Discrete Semiconductors - Mansfield 171 Forbes Blvd. Mansfield, MA 02048 Abstract th BFG21W, the new 5 generation transistor from Philips Semiconductors, is well suited for PA driver


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    800MHz BFG21W JL-9803v2 BFG21W, BFG21W 800MHz, 25dBm, k 3918 TRANSISTOR pin diagram of bf 494 transistor 7497 spice smd transistor 501 smd transistors 458 transistor 381 7943 RF NPN POWER TRANSISTOR C 10-12 GHZ PMBT3904 09 18 140 9622 PDF

    FMCW Radar

    Abstract: radar 77 ghz sige radar 77 ghz receiver mesfet lnb FETs working 60Ghz infineon FMCW 77 ghz FMCW radar gunn diode Gunn Diode GaAs Gunn Diode "94 GHz"
    Text: INFINEON TECHNOLOGIES AG’S SALES OFFICES WORLDWIDE – P A R T LY R E P R E S E N T E D B Y S I E M E N S A G AUS Siemens Ltd. 885 Mountain Highway Bayswater, Victoria 3153 T +61 3-97 21 2 1 11 Fax (+61) 3-97 21 72 75 BR Infineon Technologies South America Ltda.


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    3800-Pirituba E-28760 DK-2750 FMCW Radar radar 77 ghz sige radar 77 ghz receiver mesfet lnb FETs working 60Ghz infineon FMCW 77 ghz FMCW radar gunn diode Gunn Diode GaAs Gunn Diode "94 GHz" PDF

    MA 7824

    Abstract: tl 7824 7824 SMD 7824 5A 7824 MAX INPUT VOLTAGE 7824 pin diagram of 7824 ACPM-7824 J-STD-020B J-STD-033
    Text: ACPM-7824 CELLULAR 4x4 Power Amplifier Module 824-849MHz Data Sheet Description Features The ACPM-7824 is a fully matched 10-pin surface mount module developed for CELLULAR. This power amplifier module operates in the 824-849MHz bandwidth. The ACPM-7824 meets stringent CDMA linearity requirements


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    ACPM-7824 824-849MHz) ACPM-7824 10-pin 824-849MHz 28dBm 50ohm AV02-1730EN MA 7824 tl 7824 7824 SMD 7824 5A 7824 MAX INPUT VOLTAGE 7824 pin diagram of 7824 J-STD-020B J-STD-033 PDF

    TSMC 0.18 um MOSfet

    Abstract: M38510 10102BCA IDT7204L 5962-8768401MQA 0.18um LDMOS TSMC sl1053 TSMC 0.25Um LDMOS UT63M125BB SMD RTAX250S-CQ208 5962-04221
    Text: DSCC Supplemental Information Sheet for Electronic QML-38535 Specification Details: Date: 9/2/2008 Specification: MIL-PRF-38535 Title: Advanced Microcircuits Federal Supply Class FSC : 5962 Conventional: No Specification contains quality assurance program: Yes


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    QML-38535 MIL-PRF-38535 MIL-STD-790 MIL-STD-690 -581DSCC QML-38535 TSMC 0.18 um MOSfet M38510 10102BCA IDT7204L 5962-8768401MQA 0.18um LDMOS TSMC sl1053 TSMC 0.25Um LDMOS UT63M125BB SMD RTAX250S-CQ208 5962-04221 PDF