NT256D64SH8BAGM-6K
Abstract: NT256D64SH8B0GM-75B NT512D64S8HB0FN-6K NT128D64SH4B0GM NT256D64SH8B0GM NT256D64SH8BAGM SA2 357 nanya nt128d64sh4bbgm-75b DDR333 pc2700 256MB nanya NT256D64SH8BAGM-6K NT256D54SH8B0GN
Text: NT512D64S8HBAFM / NT512D64S8HB0FN NT256D64SH8B0GM / NT256D64SH8B0GN / NT256D64SH8BAGM NT128D64SH4B0GM / NT128D64SH4B0GN / NT128D64SH4BBGM 512MB, 256MB and 128MB PC2700 and PC2100 Unbuffered DDR SO-DIMM 200 pin Unbuffered DDR SO-DIMM Based on DDR333/266 256M bit B Die device
|
Original
|
NT512D64S8HBAFM
NT512D64S8HB0FN
NT256D64SH8B0GM
NT256D64SH8B0GN
NT256D64SH8BAGM
NT128D64SH4B0GM
NT128D64SH4B0GN
NT128D64SH4BBGM
512MB,
256MB
NT256D64SH8BAGM-6K
NT256D64SH8B0GM-75B
NT512D64S8HB0FN-6K
NT256D64SH8BAGM
SA2 357
nanya nt128d64sh4bbgm-75b
DDR333 pc2700 256MB nanya NT256D64SH8BAGM-6K
NT256D54SH8B0GN
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Data Sheet Rev.1.2 11.11.2010 4096MB DDR3 – SDRAM SO-DIMM 204 Pin SO-DIMM Features: SGN04G64E1BD2MT-CCRT • 4GB PC3-10600 in FBGA Technology • RoHS compliant Options: Data Rate / Latency DDR3 1333 MT/s CL9 DDR3 1066 MT/s CL7 Module Density
|
Original
|
4096MB
SGN04G64E1BD2MT-CCRT
PC3-10600
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Data Sheet Rev.1.2 11.11.2010 4096MB DDR3 – SDRAM SO-DIMM 204 Pin SO-DIMM Features: SGN04G64E1BD2MT-CCRT • 4GB PC3-10600 in FBGA Technology • RoHS compliant Options: Data Rate / Latency DDR3 1333 MT/s CL9 DDR3 1066 MT/s CL7 Module Density
|
Original
|
4096MB
SGN04G64E1BD2MT-CCRT
PC3-10600
|
PDF
|
BCM57780
Abstract: AN12947a UP6111 isl62882 SLG8SP585V ALC669X bcm5778 wpce775 Intel hm55 WINBOND W25Q32BVSSIG
Text: 5 4 3 2 1 ZY9B SYSTEM BLOCK DIAGRAM GPU CORE PWR CHARGER P44 ISL6264 GPU IO PWR 3/5V SYS PWR P45 ISL62827 +3V,+ 5V,+1.5V,+1.05V,+1.1V_VTT CLOCK GENERATOR <MCH Processor> Dual Channel 800/ 1066 MHz DDR III SO-DIMM 0 SO-DIMM 1 800 MT/s 1066 MT/s P14, 15 DDR SYSTEM MEMORY
|
Original
|
ISL6264
ISL88731
ISL62827
ISL6237
SLG8SP585V
318MHz
133MHz
100MHz
120MHz
ISL62882
BCM57780
AN12947a
UP6111
isl62882
SLG8SP585V
ALC669X
bcm5778
wpce775
Intel hm55
WINBOND W25Q32BVSSIG
|
PDF
|
FDS6692
Abstract: FDS6988S MARKING QG 6 PIN
Text: FDS6988S Dual Notebook Power Supply N-Channel PowerTrench SyncFET General Description Features The FDS6988S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages
|
Original
|
FDS6988S
FDS6988S
FDS6692
MARKING QG 6 PIN
|
PDF
|
recepteur infrarouge
Abstract: LLK-5050-000 infrarouge led infrarouge LLK-5050-000-502 inverseur
Text: data sheet Certified I SO 9 LL - 5050 - 00 Schaltabstand Portée Operating distance Barrière Through-beam sensor Caractéristiques principales: Main features: − Grosser Schaltabstand von 15'000 mm − Portée importante de 15'000mm – Hohe Schaltfrequenz 1000 Hz
|
Original
|
000mm
5050LL502
recepteur infrarouge
LLK-5050-000
infrarouge
led infrarouge
LLK-5050-000-502
inverseur
|
PDF
|
Micro Battery
Abstract: TS Lithium Rechargeable Battery Sales TS920E For Your Safety Precautions TS920 medical seizaiken battery
Text: Silver Oxide Battery Product Catalogue Precautions for Your Safety For using SII Silver Oxide batteries, please follow the following precautions. WARNING! • Do not heat, disassemble nor dispose of in fire Doing so damages the insulation materials and may cause fire,
|
Original
|
fr59-6,
D-63263
BAC3012EJ-01C1410
Micro Battery
TS Lithium Rechargeable Battery
Sales
TS920E
For Your Safety
Precautions
TS920
medical
seizaiken
battery
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NTMFS4923NE Power MOSFET 30 V, 91 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability
|
Original
|
NTMFS4923NE
NTMFS4923NE/D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NTMFS4923NE Power MOSFET 30 V, 91 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability
|
Original
|
NTMFS4923NE
NTMFS4923NE/D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NTMFS4923NE Power MOSFET 30 V, 91 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability
|
Original
|
NTMFS4923NE
NTMFS4923NE/D
|
PDF
|
MBT3906
Abstract: BT180
Text: MMBT3906 MMPQ3 906 c / MMBT3906 2N3906 TO-92 B ‘ PZT3906 PZT3906 MMPQ3906 SO T-223 SO IC-16 PNP General P u r p o s e Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 jiA to 100 mA. Sourced
|
OCR Scan
|
2N3906
MMBT3906
2N3906
PZT3906
MMPQ3906
IC-16
T-223
MBT3906
BT180
|
PDF
|
AN7254
Abstract: RF650N06 RFP50N05 RFP50N06 AN-7254 RFG50N05 mosfat 24v mosfat RFP70N06 34069
Text: 3 } H a r r is May 1992 R FP 50N 05 R FG 50N 05 N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs Features Package TO-220AB TOP VIEW • 50 A , 5 0 V • rDS(on) = 0 .0 2 2 0 DRAIN (FLANGE) • UIS SO A Rating Curve (Single Pulse) u • SO A is P ow er-D issipation Lim ited
|
OCR Scan
|
RFP50N05
RFG50N05
0-022O
11e-12
91e-3TRS1
26e-3
07e-6
12e-9
AN7254
RF650N06
RFP50N06
AN-7254
mosfat 24v
mosfat
RFP70N06
34069
|
PDF
|
B473G
Abstract: No abstract text available
Text: COMBINATION FILM CAPACITORS •flBISBP" CAPACITORS/EMI FILTERS/TRANSFORMERS/TRANSIENT VOLTAGE SURGE SUPPRESSORS ELECTROCUBE, INC. ■ 1307 So. Myrtle Avenue, Monrovia, CA 91016 ■ 818 301-0122 ■ FAX (818) 357-8099 METALLIZED COMBINATION FILMS WITH ENGINEERING
|
OCR Scan
|
|
PDF
|
mylar capacitor 154
Abstract: 104 mylar capacitor
Text: l y electrocube HERMETICALLY SEALED CAPACITORS •■IJclli««» CAPACITORS/EMI FILTERS/TRANSFORMERS/TRANSIENT VOLTAGE SURGE SUPPRESSORS ELECTROCUBE, INC. ■ 1307 So. Myrtle Avenue, Monrovia, CA 91016 ■ 818 301-0122 ■ FAX (818) 357-8099 yy electrocube
|
OCR Scan
|
Capa400
mylar capacitor 154
104 mylar capacitor
|
PDF
|
|
|
JB marking transistor
Abstract: transistor SOT23 1d KST42 KST43 TD5 marking BB 541 J JB transistor HB 541 transistor marking JB
Text: KST42/43 NPN EPITAXIAL SILICO N TRANSISTO R HIGH VOLTAGE TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating Unit 300 200 V V Tstg 300 200 6 500 350 150 V V V mA mW °C R (j-a) 357 °C/W Symbol Collector Base Voltage V cbO KST42
|
OCR Scan
|
KST42/43
KST42
KST43
OT-23
100MA,
JB marking transistor
transistor SOT23 1d
KST42
KST43
TD5 marking
BB 541
J JB transistor
HB 541
transistor marking JB
|
PDF
|
T2907A
Abstract: bt2907a MARKING k1p
Text: MMBT2222A NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • Epitaxial Planar Die Construction Complementary PNP Type Available M M B T2907A Ideal for Medium Power Amplification and Switching SOT-23 Mechanical Data_ Case: SO T-23, Molded Plastic
|
OCR Scan
|
MMBT2222A
T2907A
OT-23
IL-STD-202,
150mA,
500mA,
100MHz
T2907A
bt2907a
MARKING k1p
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MMBT4403 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • Epitaxial Planar Die Construction Complementary NPN Type Available M M B T4401 Ideal for Medium Power Amplification and Switching SOT-23 Mechanical Data_ Case: SO T-23, Molded Plastic
|
OCR Scan
|
MMBT4403
T4401)
OT-23
IL-STD-202,
-150mA,
-15mA
-500mA,
-50mA
|
PDF
|
BT3906
Abstract: BT3904
Text: MMBT3906 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • Epitaxial Planar Die Construction Complementary NPN Type Available M M B T3904 Ideal for Medium Power Amplification and Switching SOT-23 Mechanical Data_ Case: SO T-23, Molded Plastic
|
OCR Scan
|
MMBT3906
T3904)
OT-23
IL-STD-202,
100MHz
-10mA,
300ns,
DS30059
BT3906
BT3904
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MMBTH17 NPN EPITAXIAL SILICON TRANSISTOR CATV TRANSISTOR SO T -2 3 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Symbol Collector-Base Voltage V cB O Collector-Emitter Voltage V ceo Emitter-Base Voltage V ebo Collector Dissipation Pc Storage Temperature
|
OCR Scan
|
MMBTH17
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MMBT4126 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • Epitaxial Planar Die Construction Complementary NPN Type Available M M B T4124 Ideal for Medium Power Amplification and Switching SOT-23 Mechanical Data_ Case: SO T-23, Molded Plastic
|
OCR Scan
|
MMBT4126
T4124)
OT-23
IL-STD-202,
-50mA,
-10mA,
100MHz
300ns,
DS30106
|
PDF
|
bt3904
Abstract: k2x transistor surface mount BL6040 marking EB 202 transistor R2X SOT23 BT4403 mbt4403
Text: MMBT4401 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • Epitaxial Planar Die Construction Complementary PNP Type Available M M B T4403 Ideal for Medium Power Amplification and Switching SOT-23 Mechanical Data_ Case: SO T-23, Molded Plastic
|
OCR Scan
|
MMBT4401
T4403)
OT-23
IL-STD-202,
150mA,
500mA,
100MHz
bt3904
k2x transistor surface mount
BL6040
marking EB 202 transistor
R2X SOT23
BT4403
mbt4403
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BAL99 SURFACE MOUNT SWITCHING DIODE Features Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-23 I u Case: SO T-23, Molded Plastic Terminals: Solderable per M IL-STD-202,
|
OCR Scan
|
BAL99
OT-23
IL-STD-202,
150mA
DS12009
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MMBT6427 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain SOT-23 H :h~A TOR VIEW Mechanical Data_ Case: SO T-23, Molded Plastic Terminals: Solderable per M IL-STD-202,
|
OCR Scan
|
MMBT6427
OT-23
IL-STD-202,
100mA,
500mA,
300ns,
DS30048
|
PDF
|
lineal
Abstract: 6299B thermalloy to-3
Text: Thermal Management JSA A Thermal Primer Thermal resistance, heat sink to ambient free air Ambient temperature Micrel low dropout (LDO) regulators are very easy to use. Only one external filter capacitor is nec essary for operation, so the electrical design effort is
|
OCR Scan
|
300mV-often
lineal
6299B
thermalloy to-3
|
PDF
|