SO 357 Search Results

NT256D64SH8BAGM-6K

Abstract: NT256D64SH8B0GM-75B NT512D64S8HB0FN-6K NT128D64SH4B0GM NT256D64SH8B0GM NT256D64SH8BAGM SA2 357 nanya nt128d64sh4bbgm-75b DDR333 pc2700 256MB nanya NT256D64SH8BAGM-6K NT256D54SH8B0GN
Contextual Info: NT512D64S8HBAFM / NT512D64S8HB0FN NT256D64SH8B0GM / NT256D64SH8B0GN / NT256D64SH8BAGM NT128D64SH4B0GM / NT128D64SH4B0GN / NT128D64SH4BBGM 512MB, 256MB and 128MB PC2700 and PC2100 Unbuffered DDR SO-DIMM 200 pin Unbuffered DDR SO-DIMM Based on DDR333/266 256M bit B Die device

Contextual Info: Data Sheet Rev.1.2 11.11.2010 4096MB DDR3 – SDRAM SO-DIMM 204 Pin SO-DIMM Features: SGN04G64E1BD2MT-CCRT • 4GB PC3-10600 in FBGA Technology •    RoHS compliant Options:  Data Rate / Latency DDR3 1333 MT/s CL9 DDR3 1066 MT/s CL7  Module Density

Contextual Info: Data Sheet Rev.1.2 11.11.2010 4096MB DDR3 – SDRAM SO-DIMM 204 Pin SO-DIMM Features: SGN04G64E1BD2MT-CCRT • 4GB PC3-10600 in FBGA Technology •    RoHS compliant Options:  Data Rate / Latency DDR3 1333 MT/s CL9 DDR3 1066 MT/s CL7  Module Density

MBT3906

Abstract: BT180
Contextual Info: MMBT3906 MMPQ3 906 c / MMBT3906 2N3906 TO-92 B ‘ PZT3906 PZT3906 MMPQ3906 SO T-223 SO IC-16 PNP General P u r p o s e Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 jiA to 100 mA. Sourced

BCM57780

Abstract: AN12947a UP6111 isl62882 SLG8SP585V ALC669X bcm5778 wpce775 Intel hm55 WINBOND W25Q32BVSSIG
Contextual Info: 5 4 3 2 1 ZY9B SYSTEM BLOCK DIAGRAM GPU CORE PWR CHARGER P44 ISL6264 GPU IO PWR 3/5V SYS PWR P45 ISL62827 +3V,+ 5V,+1.5V,+1.05V,+1.1V_VTT CLOCK GENERATOR <MCH Processor> Dual Channel 800/ 1066 MHz DDR III SO-DIMM 0 SO-DIMM 1 800 MT/s 1066 MT/s P14, 15 DDR SYSTEM MEMORY

AN7254

Abstract: RF650N06 RFP50N05 RFP50N06 AN-7254 RFG50N05 mosfat 24v mosfat RFP70N06 34069
Contextual Info: 3 } H a r r is May 1992 R FP 50N 05 R FG 50N 05 N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs Features Package TO-220AB TOP VIEW • 50 A , 5 0 V • rDS(on) = 0 .0 2 2 0 DRAIN (FLANGE) • UIS SO A Rating Curve (Single Pulse) u • SO A is P ow er-D issipation Lim ited

B473G

Contextual Info: COMBINATION FILM CAPACITORS •flBISBP" CAPACITORS/EMI FILTERS/TRANSFORMERS/TRANSIENT VOLTAGE SURGE SUPPRESSORS ELECTROCUBE, INC. ■ 1307 So. Myrtle Avenue, Monrovia, CA 91016 ■ 818 301-0122 ■ FAX (818) 357-8099 METALLIZED COMBINATION FILMS WITH ENGINEERING

mylar capacitor 154

Abstract: 104 mylar capacitor
Contextual Info: l y electrocube HERMETICALLY SEALED CAPACITORS •■IJclli««» CAPACITORS/EMI FILTERS/TRANSFORMERS/TRANSIENT VOLTAGE SURGE SUPPRESSORS ELECTROCUBE, INC. ■ 1307 So. Myrtle Avenue, Monrovia, CA 91016 ■ 818 301-0122 ■ FAX (818) 357-8099 yy electrocube

1g marking

Contextual Info: KST05/06 NPN EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol Collector Base Voltage Rating Unit 60 80 V V 60 80 4 500 350 150 V V V mA mW °C 357 °C/W V cB O : KST05 : KST06 Collector-Emitter Voltage

FDS6692

Abstract: FDS6988S MARKING QG 6 PIN
Contextual Info: FDS6988S Dual Notebook Power Supply N-Channel PowerTrench SyncFET General Description Features The FDS6988S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages

JB marking transistor

Abstract: transistor SOT23 1d KST42 KST43 TD5 marking BB 541 J JB transistor HB 541 transistor marking JB
Contextual Info: KST42/43 NPN EPITAXIAL SILICO N TRANSISTO R HIGH VOLTAGE TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating Unit 300 200 V V Tstg 300 200 6 500 350 150 V V V mA mW °C R (j-a) 357 °C/W Symbol Collector Base Voltage V cbO KST42

T2907A

Abstract: bt2907a MARKING k1p
Contextual Info: MMBT2222A NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • Epitaxial Planar Die Construction Complementary PNP Type Available M M B T2907A Ideal for Medium Power Amplification and Switching SOT-23 Mechanical Data_ Case: SO T-23, Molded Plastic

Contextual Info: MMBT4403 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • Epitaxial Planar Die Construction Complementary NPN Type Available M M B T4401 Ideal for Medium Power Amplification and Switching SOT-23 Mechanical Data_ Case: SO T-23, Molded Plastic

BT3906

Abstract: BT3904
Contextual Info: MMBT3906 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • Epitaxial Planar Die Construction Complementary NPN Type Available M M B T3904 Ideal for Medium Power Amplification and Switching SOT-23 Mechanical Data_ Case: SO T-23, Molded Plastic

recepteur infrarouge

Abstract: LLK-5050-000 infrarouge led infrarouge LLK-5050-000-502 inverseur
Contextual Info: data sheet Certified I SO 9 LL - 5050 - 00 Schaltabstand Portée Operating distance Barrière Through-beam sensor Caractéristiques principales: Main features: − Grosser Schaltabstand von 15'000 mm − Portée importante de 15'000mm – Hohe Schaltfrequenz 1000 Hz

Contextual Info: MMBT4126 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • Epitaxial Planar Die Construction Complementary NPN Type Available M M B T4124 Ideal for Medium Power Amplification and Switching SOT-23 Mechanical Data_ Case: SO T-23, Molded Plastic

bt3904

Abstract: k2x transistor surface mount BL6040 marking EB 202 transistor R2X SOT23 BT4403 mbt4403
Contextual Info: MMBT4401 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • Epitaxial Planar Die Construction Complementary PNP Type Available M M B T4403 Ideal for Medium Power Amplification and Switching SOT-23 Mechanical Data_ Case: SO T-23, Molded Plastic

Micro Battery

Abstract: TS Lithium Rechargeable Battery Sales TS920E For Your Safety Precautions TS920 medical seizaiken battery
Contextual Info: Silver Oxide Battery Product Catalogue Precautions for Your Safety For using SII Silver Oxide batteries, please follow the following precautions. WARNING! • Do not heat, disassemble nor dispose of in fire Doing so damages the insulation materials and may cause fire,

Contextual Info: BAL99 SURFACE MOUNT SWITCHING DIODE Features Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-23 I u Case: SO T-23, Molded Plastic Terminals: Solderable per M IL-STD-202,

Contextual Info: NTMFS4923NE Power MOSFET 30 V, 91 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability

Contextual Info: NTMFS4923NE Power MOSFET 30 V, 91 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability

Contextual Info: MMBT6427 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain SOT-23 H :h~A TOR VIEW Mechanical Data_ Case: SO T-23, Molded Plastic Terminals: Solderable per M IL-STD-202,

Contextual Info: NTMFS4923NE Power MOSFET 30 V, 91 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability

lineal

Abstract: 6299B thermalloy to-3
Contextual Info: Thermal Management JSA A Thermal Primer Thermal resistance, heat sink to ambient free air Ambient temperature Micrel low dropout (LDO) regulators are very easy to use. Only one external filter capacitor is nec­ essary for operation, so the electrical design effort is