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    SO 357 Search Results

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    SO 357 Price and Stock

    PennEngineering (PEM) YSMTSO-35738-ET

    SURFACE MOUNT STANDOFF SMTSO-M25-4-56P
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    DB Roberts YSMTSO-35738-ET 900
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    SO 357 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SO3570 Thomson-CSF Condensed Data Book 1977 Scan PDF
    SO3570R Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    SO3571 Thomson-CSF Condensed Data Book 1977 Scan PDF
    SO3571R Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    SO3572 Thomson-CSF Condensed Data Book 1977 Scan PDF
    SO3572R Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF

    SO 357 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NT256D64SH8BAGM-6K

    Abstract: NT256D64SH8B0GM-75B NT512D64S8HB0FN-6K NT128D64SH4B0GM NT256D64SH8B0GM NT256D64SH8BAGM SA2 357 nanya nt128d64sh4bbgm-75b DDR333 pc2700 256MB nanya NT256D64SH8BAGM-6K NT256D54SH8B0GN
    Text: NT512D64S8HBAFM / NT512D64S8HB0FN NT256D64SH8B0GM / NT256D64SH8B0GN / NT256D64SH8BAGM NT128D64SH4B0GM / NT128D64SH4B0GN / NT128D64SH4BBGM 512MB, 256MB and 128MB PC2700 and PC2100 Unbuffered DDR SO-DIMM 200 pin Unbuffered DDR SO-DIMM Based on DDR333/266 256M bit B Die device


    Original     		PDF NT512D64S8HBAFM NT512D64S8HB0FN NT256D64SH8B0GM NT256D64SH8B0GN NT256D64SH8BAGM NT128D64SH4B0GM NT128D64SH4B0GN NT128D64SH4BBGM 512MB, 256MB NT256D64SH8BAGM-6K NT256D64SH8B0GM-75B NT512D64S8HB0FN-6K NT256D64SH8BAGM SA2 357 nanya nt128d64sh4bbgm-75b DDR333 pc2700 256MB nanya NT256D64SH8BAGM-6K NT256D54SH8B0GN

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Rev.1.2 11.11.2010 4096MB DDR3 – SDRAM SO-DIMM 204 Pin SO-DIMM Features: SGN04G64E1BD2MT-CCRT • 4GB PC3-10600 in FBGA Technology •    RoHS compliant Options:  Data Rate / Latency DDR3 1333 MT/s CL9 DDR3 1066 MT/s CL7  Module Density


    Original     		PDF 4096MB SGN04G64E1BD2MT-CCRT PC3-10600

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Rev.1.2 11.11.2010 4096MB DDR3 – SDRAM SO-DIMM 204 Pin SO-DIMM Features: SGN04G64E1BD2MT-CCRT • 4GB PC3-10600 in FBGA Technology •    RoHS compliant Options:  Data Rate / Latency DDR3 1333 MT/s CL9 DDR3 1066 MT/s CL7  Module Density


    Original     		PDF 4096MB SGN04G64E1BD2MT-CCRT PC3-10600

    BCM57780

    Abstract: AN12947a UP6111 isl62882 SLG8SP585V ALC669X bcm5778 wpce775 Intel hm55 WINBOND W25Q32BVSSIG
    Text: 5 4 3 2 1 ZY9B SYSTEM BLOCK DIAGRAM GPU CORE PWR CHARGER P44 ISL6264 GPU IO PWR 3/5V SYS PWR P45 ISL62827 +3V,+ 5V,+1.5V,+1.05V,+1.1V_VTT CLOCK GENERATOR <MCH Processor> Dual Channel 800/ 1066 MHz DDR III SO-DIMM 0 SO-DIMM 1 800 MT/s 1066 MT/s P14, 15 DDR SYSTEM MEMORY


    Original     		PDF ISL6264 ISL88731 ISL62827 ISL6237 SLG8SP585V 318MHz 133MHz 100MHz 120MHz ISL62882 BCM57780 AN12947a UP6111 isl62882 SLG8SP585V ALC669X bcm5778 wpce775 Intel hm55 WINBOND W25Q32BVSSIG

    FDS6692

    Abstract: FDS6988S MARKING QG 6 PIN
    Text: FDS6988S Dual Notebook Power Supply N-Channel PowerTrench SyncFET General Description Features The FDS6988S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages


    Original     		PDF FDS6988S FDS6988S FDS6692 MARKING QG 6 PIN

    recepteur infrarouge

    Abstract: LLK-5050-000 infrarouge led infrarouge LLK-5050-000-502 inverseur
    Text: data sheet Certified I SO 9 LL - 5050 - 00 Schaltabstand Portée Operating distance Barrière Through-beam sensor Caractéristiques principales: Main features: − Grosser Schaltabstand von 15'000 mm − Portée importante de 15'000mm – Hohe Schaltfrequenz 1000 Hz


    Original     		PDF 000mm 5050LL502 recepteur infrarouge LLK-5050-000 infrarouge led infrarouge LLK-5050-000-502 inverseur

    Micro Battery

    Abstract: TS Lithium Rechargeable Battery Sales TS920E For Your Safety Precautions TS920 medical seizaiken battery
    Text: Silver Oxide Battery Product Catalogue Precautions for Your Safety For using SII Silver Oxide batteries, please follow the following precautions. WARNING! • Do not heat, disassemble nor dispose of in fire Doing so damages the insulation materials and may cause fire,


    Original     		PDF fr59-6, D-63263 BAC3012EJ-01C1410 Micro Battery TS Lithium Rechargeable Battery Sales TS920E For Your Safety Precautions TS920 medical seizaiken battery

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4923NE Power MOSFET 30 V, 91 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability


    Original     		PDF NTMFS4923NE NTMFS4923NE/D

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4923NE Power MOSFET 30 V, 91 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability


    Original     		PDF NTMFS4923NE NTMFS4923NE/D

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4923NE Power MOSFET 30 V, 91 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability


    Original     		PDF NTMFS4923NE NTMFS4923NE/D

    MBT3906

    Abstract: BT180
    Text: MMBT3906 MMPQ3 906 c / MMBT3906 2N3906 TO-92 B ‘ PZT3906 PZT3906 MMPQ3906 SO T-223 SO IC-16 PNP General P u r p o s e Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 jiA to 100 mA. Sourced


    OCR Scan     		PDF 2N3906 MMBT3906 2N3906 PZT3906 MMPQ3906 IC-16 T-223 MBT3906 BT180

    AN7254

    Abstract: RF650N06 RFP50N05 RFP50N06 AN-7254 RFG50N05 mosfat 24v mosfat RFP70N06 34069
    Text: 3 } H a r r is May 1992 R FP 50N 05 R FG 50N 05 N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs Features Package TO-220AB TOP VIEW • 50 A , 5 0 V • rDS(on) = 0 .0 2 2 0 DRAIN (FLANGE) • UIS SO A Rating Curve (Single Pulse) u • SO A is P ow er-D issipation Lim ited


    OCR Scan     		PDF RFP50N05 RFG50N05 0-022O 11e-12 91e-3TRS1 26e-3 07e-6 12e-9 AN7254 RF650N06 RFP50N06 AN-7254 mosfat 24v mosfat RFP70N06 34069

    B473G

    Abstract: No abstract text available
    Text: COMBINATION FILM CAPACITORS •flBISBP" CAPACITORS/EMI FILTERS/TRANSFORMERS/TRANSIENT VOLTAGE SURGE SUPPRESSORS ELECTROCUBE, INC. ■ 1307 So. Myrtle Avenue, Monrovia, CA 91016 ■ 818 301-0122 ■ FAX (818) 357-8099 METALLIZED COMBINATION FILMS WITH ENGINEERING


    OCR Scan     		PDF

    mylar capacitor 154

    Abstract: 104 mylar capacitor
    Text: l y electrocube HERMETICALLY SEALED CAPACITORS •■IJclli««» CAPACITORS/EMI FILTERS/TRANSFORMERS/TRANSIENT VOLTAGE SURGE SUPPRESSORS ELECTROCUBE, INC. ■ 1307 So. Myrtle Avenue, Monrovia, CA 91016 ■ 818 301-0122 ■ FAX (818) 357-8099 yy electrocube


    OCR Scan     		PDF Capa400 mylar capacitor 154 104 mylar capacitor

    JB marking transistor

    Abstract: transistor SOT23 1d KST42 KST43 TD5 marking BB 541 J JB transistor HB 541 transistor marking JB
    Text: KST42/43 NPN EPITAXIAL SILICO N TRANSISTO R HIGH VOLTAGE TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating Unit 300 200 V V Tstg 300 200 6 500 350 150 V V V mA mW °C R (j-a) 357 °C/W Symbol Collector Base Voltage V cbO KST42


    OCR Scan     		PDF KST42/43 KST42 KST43 OT-23 100MA, JB marking transistor transistor SOT23 1d KST42 KST43 TD5 marking BB 541 J JB transistor HB 541 transistor marking JB

    T2907A

    Abstract: bt2907a MARKING k1p
    Text: MMBT2222A NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • Epitaxial Planar Die Construction Complementary PNP Type Available M M B T2907A Ideal for Medium Power Amplification and Switching SOT-23 Mechanical Data_ Case: SO T-23, Molded Plastic


    OCR Scan     		PDF MMBT2222A T2907A OT-23 IL-STD-202, 150mA, 500mA, 100MHz T2907A bt2907a MARKING k1p

    Untitled

    Abstract: No abstract text available
    Text: MMBT4403 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • Epitaxial Planar Die Construction Complementary NPN Type Available M M B T4401 Ideal for Medium Power Amplification and Switching SOT-23 Mechanical Data_ Case: SO T-23, Molded Plastic


    OCR Scan     		PDF MMBT4403 T4401) OT-23 IL-STD-202, -150mA, -15mA -500mA, -50mA

    BT3906

    Abstract: BT3904
    Text: MMBT3906 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • Epitaxial Planar Die Construction Complementary NPN Type Available M M B T3904 Ideal for Medium Power Amplification and Switching SOT-23 Mechanical Data_ Case: SO T-23, Molded Plastic


    OCR Scan     		PDF MMBT3906 T3904) OT-23 IL-STD-202, 100MHz -10mA, 300ns, DS30059 BT3906 BT3904

    Untitled

    Abstract: No abstract text available
    Text: MMBTH17 NPN EPITAXIAL SILICON TRANSISTOR CATV TRANSISTOR SO T -2 3 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Symbol Collector-Base Voltage V cB O Collector-Emitter Voltage V ceo Emitter-Base Voltage V ebo Collector Dissipation Pc Storage Temperature


    OCR Scan     		PDF MMBTH17

    Untitled

    Abstract: No abstract text available
    Text: MMBT4126 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • Epitaxial Planar Die Construction Complementary NPN Type Available M M B T4124 Ideal for Medium Power Amplification and Switching SOT-23 Mechanical Data_ Case: SO T-23, Molded Plastic


    OCR Scan     		PDF MMBT4126 T4124) OT-23 IL-STD-202, -50mA, -10mA, 100MHz 300ns, DS30106

    bt3904

    Abstract: k2x transistor surface mount BL6040 marking EB 202 transistor R2X SOT23 BT4403 mbt4403
    Text: MMBT4401 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • Epitaxial Planar Die Construction Complementary PNP Type Available M M B T4403 Ideal for Medium Power Amplification and Switching SOT-23 Mechanical Data_ Case: SO T-23, Molded Plastic


    OCR Scan     		PDF MMBT4401 T4403) OT-23 IL-STD-202, 150mA, 500mA, 100MHz bt3904 k2x transistor surface mount BL6040 marking EB 202 transistor R2X SOT23 BT4403 mbt4403

    Untitled

    Abstract: No abstract text available
    Text: BAL99 SURFACE MOUNT SWITCHING DIODE Features Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-23 I u Case: SO T-23, Molded Plastic Terminals: Solderable per M IL-STD-202,


    OCR Scan     		PDF BAL99 OT-23 IL-STD-202, 150mA DS12009

    Untitled

    Abstract: No abstract text available
    Text: MMBT6427 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain SOT-23 H :h~A TOR VIEW Mechanical Data_ Case: SO T-23, Molded Plastic Terminals: Solderable per M IL-STD-202,


    OCR Scan     		PDF MMBT6427 OT-23 IL-STD-202, 100mA, 500mA, 300ns, DS30048

    lineal

    Abstract: 6299B thermalloy to-3
    Text: Thermal Management JSA A Thermal Primer Thermal resistance, heat sink to ambient free air Ambient temperature Micrel low dropout (LDO) regulators are very easy to use. Only one external filter capacitor is nec­ essary for operation, so the electrical design effort is


    OCR Scan     		PDF 300mV-often lineal 6299B thermalloy to-3