transistor BP 109
Abstract: Si4420DY
Text: Si4420DY N-channel enhancement mode field-effect transistor Rev. 01 — 28 May 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si4420DY in SOT96-1 SO8 .
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Si4420DY
M3D315
OT96-1
OT96-1,
transistor BP 109
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MS-012AA
Abstract: Si4410DY
Text: Si4410DY N-channel enhancement mode field-effect transistor Rev. 02 — 05 July 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si4410DY in SOT96-1 SO8 .
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Si4410DY
M3D315
OT96-1
OT96-1,
MS-012AA
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Si4416DY
Abstract: SOT96- 1
Text: Si4416DY N-channel enhancement mode field-effect transistor Rev. 01 — 05 June 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si4416DY in SOT96-1 SO8 .
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Si4416DY
M3D315
OT96-1
OT96-1,
SOT96- 1
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Untitled
Abstract: No abstract text available
Text: Si4410DY N-channel enhancement mode field-effect transistor Rev. 01 — 20 Feb 2001 M3D315 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si4410DY in SOT96-1 SO8 .
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Si4410DY
M3D315
OT96-1
OT96-1,
MBK187
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Si9410DY
Abstract: No abstract text available
Text: Si9410DY N-channel enhancement mode field-effect transistor Rev. 02 — 05 July 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si9410DY in SOT96-1 SO8 .
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Si9410DY
M3D315
OT96-1
OT96-1,
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Untitled
Abstract: No abstract text available
Text: Si9410DY N-channel enhancement mode field-effect transistor Rev. 01 — 15 May 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si9410DY in SOT96-1 SO8 .
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Si9410DY
M3D315
OT96-1
OT96-1,
MBK187
MBB076
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03ac29
Abstract: HZG336 MS-012AA PHN103T
Text: PHN103T N-channel enhancement mode field-effect transistor Rev. 01 — 28 August 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHN103T in SOT96-1 SO8 .
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PHN103T
PHN103T
OT96-1
OT96-1,
03ac29
HZG336
MS-012AA
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si4800
Abstract: 03af85 MS-012AA Si4800 philips
Text: Si4800 N-channel enhancement mode field-effect transistor Rev. 01 — 13 July 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si4800 in SOT96-1 SO8 .
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Si4800
M3D315
Si4800
OT96-1
OT96-1,
03af85
MS-012AA
Si4800 philips
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PSMN085-150K
Abstract: No abstract text available
Text: PSMN085-150K N-channel enhancement mode field-effect transistor Rev. 01 — 16 January 2001 Product specification 1. Description SiliconMAX 1 products use the latest Philips TrenchMOS™2 technology to achieve the lowest possible on-state resistance in a SOT96-1 SO8 package.
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PSMN085-150K
OT96-1
PSMN085-150K
OT96-1,
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Si9925DY
Abstract: No abstract text available
Text: Si9925DY N-channel enhancement mode field-effect transistor Rev. 01 — 20 July 2001 M3D315 Product data 1. Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si9925DY in SOT96-1 SO8 .
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Si9925DY
M3D315
OT96-1
OT96-1,
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DC TO DC convertor
Abstract: PSMN165-200K
Text: PSMN165-200K N-channel enhancement mode field-effect transistor Rev. 01 — 16 January 2001 Product specification 1. Description SiliconMAX 1 products use the latest Philips TrenchMOS™2 technology to achieve the lowest possible on-state resistance in a SOT96-1 SO8 package.
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PSMN165-200K
OT96-1
PSMN165-200K
OT96-1,
DC TO DC convertor
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MS-012AA
Abstract: Si9956DY
Text: Si9956DY N-channel enhancement mode field-effect transistor Rev. 01 — 16 July 2001 M3D315 Product data 1. Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si9956DY in SOT96-1 SO8 .
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Si9956DY
M3D315
OT96-1
OT96-1,
MS-012AA
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SCA72
Abstract: Si9936DY MS-012AA
Text: Si9936DY N-channel enhancement mode field-effect transistor Rev. 01 — 16 July 2001 M3D315 Product data 1. Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si9936DY in SOT96-1 SO8 .
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Si9936DY
M3D315
OT96-1
OT96-1,
SCA72
MS-012AA
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PSMN038-100K
Abstract: No abstract text available
Text: PSMN038-100K N-channel enhancement mode field-effect transistor Rev. 01 — 16 January 2001 Product specification 1. Description SiliconMAX 1 products use the latest Philips TrenchMOS™2 technology to achieve the lowest possible on-state resistance in a SOT96-1 SO8 package.
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PSMN038-100K
OT96-1
PSMN038-100K
OT96-1,
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smd marking 1pn
Abstract: str 50112 PCF1252 marking 4814 so8 smd marking 9T PCF1252-1 PCF1252-2P smd so8 marking code PCF1252-1P/F4,112
Text: INTEGRATED CIRCUITS DATA SHEET PCF1252-X family Threshold detector and reset generator Product specification Supersedes data of 1996 Jan 23 File under Integrated Circuits, IC11 1998 Apr 16 Philips Semiconductors Product specification Threshold detector and reset generator
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PCF1252-X
PCF1252X
smd marking 1pn
str 50112
PCF1252
marking 4814 so8
smd marking 9T
PCF1252-1
PCF1252-2P
smd so8 marking code
PCF1252-1P/F4,112
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Constant-Current LED Driver sot23
Abstract: LT3474 3474 mosfet so8 STEP-DOWN CONVERTER SO8 so8 842
Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 842 36V STEP-DOWN 1A LED DRIVER LT3474 DESCRIPTION Demonstration circuit 842 features the LT 3474 constant frequency step-down converter in a compact 16-lead TSSOP thermally enhanced package. The demonstration circuit is designed to drive a single
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LT3474
16-lead
DC842
LT3474
Constant-Current LED Driver sot23
3474
mosfet so8
STEP-DOWN CONVERTER SO8
so8 842
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CA-02SJC-B
Abstract: laptop inverter board schematic Circuit Assembly CA-02SJC-B LM2661 LM2663 ESRD220M12B dcase LMK316BJ335ML-T schematic circuit of laptop inverter AN-1142
Text: National Semiconductor Application Note 1142 Clinton Jensen November 1999 Introduction The LM2663 comes in a SO-8 package and inverts the input voltage to provide up to 200mA of output current. It has a typical efficiency of 86% at 200mA output and a typical
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LM2663
200mA
150kHz
LM2661,
LM2663,
LM2664
AN-1142
CA-02SJC-B
laptop inverter board schematic
Circuit Assembly CA-02SJC-B
LM2661
ESRD220M12B
dcase
LMK316BJ335ML-T
schematic circuit of laptop inverter
AN-1142
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LM2661
Abstract: laptop inverter board schematic CA-02SJC-B AN-1142 LM2663 LM2664 MBR0520LT1 schematic circuit of laptop inverter
Text: National Semiconductor Application Note 1142 Clinton Jensen November 1999 Introduction The LM2661, LM2663, and LM2664 are part of a family of CMOS charge-pump voltage converters Table 2 . Each uses two small capacitors to achieve voltage inversion or voltage doubling without the cost, size, and EMI of inductor
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LM2661,
LM2663,
LM2664
LM2661
LM2663
LM2663.
AN-1142
laptop inverter board schematic
CA-02SJC-B
AN-1142
MBR0520LT1
schematic circuit of laptop inverter
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BLV909
Abstract: AN98017 BLV2042 BLV904
Text: APPLICATION NOTE Mounting consideration for SOT409 ceramic SO-8 devices AN98017 Philips Semiconductors Mounting consideration for SOT409 (ceramic SO-8) devices CONTENTS 1 INTRODUCTION 2 MOUNTING OF SOT409B DEVICES 3 HEATFLOW IN APPLICATION 4 IMPORTANT FACTORS FOR THERMAL
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OT409
AN98017
OT409B
SCA57
BLV909
AN98017
BLV2042
BLV904
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laptop inverter board schematic
Abstract: CA-02SJC-B JMK316BJ106ML-T LM2661 schematic circuit of laptop inverter JMK316BJ106MLT AN-1142 LMK316BJ335ML LM2663 LM2664
Text: National Semiconductor Application Note 1142 Clinton Jensen July 2004 Introduction The LM2663 comes in a SO-8 package and inverts the input voltage to provide up to 200mA of output current. It has a typical efficiency of 86% at 200mA output and a typical output resistance of 3.5Ω. This circuit draws only 10µA of
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LM2663
200mA
150kHz
LM2661,
LM2663,
LM2664
laptop inverter board schematic
CA-02SJC-B
JMK316BJ106ML-T
LM2661
schematic circuit of laptop inverter
JMK316BJ106MLT
AN-1142
LMK316BJ335ML
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philips capacitor 1000uf 25V
Abstract: SO8 Wide Package TDA3662 TDA3663 TDA3663AT TDA3663T TDA3666
Text: INTEGRATED CIRCUITS DATA SHEET TDA3663 Very low dropout voltage/quiescent current 3.3 V voltage regulator Preliminary specification File under Integrated Circuits, IC01 1999 Sep 29 Philips Semiconductors Preliminary specification Very low dropout voltage/quiescent current
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TDA3663
TDA3663
545002/01/pp16
philips capacitor 1000uf 25V
SO8 Wide Package
TDA3662
TDA3663AT
TDA3663T
TDA3666
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tl4311
Abstract: SOP23-5 2N4920 LM337B uc3842a uc3842b MGB20N40CLT4 sg3526 bc558b TO-266AA mje150
Text: SG388CH/D 2000 4 2 SG388CH/D 2000 3 2 SCILLC,2000 © 1999 “” http://onsemi.com.cn SCI LLC ./012 !"#$%&'()*+,%?./ 14*+=* )NO @ A L M N O
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SG388CH/D
r14525
SG388CH/D
tl4311
SOP23-5
2N4920
LM337B
uc3842a uc3842b
MGB20N40CLT4
sg3526
bc558b
TO-266AA
mje150
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philips capacitor 1000uf 25V
Abstract: SO8 package SO8 Wide Package TDA3662 TDA3663 TDA3663AT TDA3663T TDA3666 capacitor mkt 344 MDA948
Text: INTEGRATED CIRCUITS DATA SHEET TDA3663 Very low dropout voltage/quiescent current 3.3 V voltage regulator Preliminary specification Supersedes data of 1999 Sep 29 File under Integrated Circuits, IC01 2000 Feb 01 Philips Semiconductors Preliminary specification
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TDA3663
753503/02/pp16
philips capacitor 1000uf 25V
SO8 package
SO8 Wide Package
TDA3662
TDA3663
TDA3663AT
TDA3663T
TDA3666
capacitor mkt 344
MDA948
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P620 PHOTOCOUPLER
Abstract: p181 opto TLP185 TLP785 Opto Coupler p181 toshiba smd marking code transistor opto P181 opto coupler TLP250 opto coupler P421 P181 Photocoupler
Text: 2011-3 PRODUCT GUIDE Photocouplers and Photorelays SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Preface Extensive Line of Products As a type of isolator favored by manufacturers, photocouplers now serve as noise protectors in many electronic devices.
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BCE0034F
P620 PHOTOCOUPLER
p181 opto
TLP185
TLP785
Opto Coupler p181
toshiba smd marking code transistor
opto P181
opto coupler TLP250
opto coupler P421
P181 Photocoupler
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