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    SOLDERING RECOMMENDATIONS FOR LDMOS POWER AMPLIFIERS 1 Search Results

    SOLDERING RECOMMENDATIONS FOR LDMOS POWER AMPLIFIERS 1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd

    SOLDERING RECOMMENDATIONS FOR LDMOS POWER AMPLIFIERS 1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Soldering recommendations for Ldmos Power Amplifiers (1) NXP Semiconductors Soldering recommendations for Ldmos Power Amplifiers (1) Original PDF

    SOLDERING RECOMMENDATIONS FOR LDMOS POWER AMPLIFIERS 1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Development General NXP Semiconductors BL-Cellular Systems, MST RF Power Basestations DEV&QAS Title: Solder mounting recommendations for Ldmos Power Amplifiers Author: Josselin FAY, Michael ASIS, Jose SALTA Doc. Nr. Date: 2008/02/14 General solder mounting recommendations


    Original     		PDF

    FAY RF

    Abstract: No abstract text available
    Text: Development General NXP Semiconductors BL-Cellular Systems, MST RF Power Basestations DEV&QAS Title: Solder mounting recommendations for Ldmos Power Amplifiers Author: Josselin FAY / Raimond DUMOULIN Doc. Nr. Date: 2007/05/10 General solder mounting recommendations


    Original     		PDF

    circuit diagram SMD Rework Station

    Abstract: 850 SMD Rework Station SLD1026Z 2 watt fet smd transistor w J 3 58
    Text: Preliminary SLD-1026Z Product Description Sirenza Microdevices’ SLD-1026Z is a robust 3 Watt high performance LDMOS transistor designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency


    Original     		SLD-1026Z SLD-1026Z 2700MHz. ProprWSX80B52 ERJ-EKF49R9V ERJ-3EKF1300V 9C06031A2100FKHFT ERJ-3GSY0R00V ERJ-3EKF1001V circuit diagram SMD Rework Station 850 SMD Rework Station SLD1026Z 2 watt fet smd transistor w J 3 58 PDF

    circuit diagram SMD Rework Station

    Abstract: Soldering recommendations for Ldmos Power Amplifiers 1 SOT23 DXF SMD TRANSISTOR R90
    Text: Preliminary SLD-1026Z Product Description Sirenza Microdevices’ SLD-1026Z is a robust 3 Watt high performance LDMOS transistor designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency


    Original     		SLD-1026Z SLD-1026Z 2700MHz. ProprWSX80B52 ERJ-EKF49R9V ERJ-3EKF1300V 9C06031A2100FKHFT ERJ-3GSY0R00V ERJ-3EKF1001V circuit diagram SMD Rework Station Soldering recommendations for Ldmos Power Amplifiers 1 SOT23 DXF SMD TRANSISTOR R90 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SLD-1026Z Product Description Sirenza Microdevices’ SLD-1026Z is a robust 3 Watt high performance LDMOS transistor designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency


    Original     		SLD-1026Z SLD-1026Z 2700MHz. SOF-26 ECJ2YB1H104K ERJ-3EKF3240V EVM-2WSX80B52 ERJ-EKF49R9V ERJ-3EKF1300V PDF

    600S4R7BT250

    Abstract: ecj2yb1h104k
    Text: Preliminary SLD-1026Z Product Description Sirenza Microdevices’ SLD-1026Z is a robust 3 Watt high performance LDMOS transistor designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency


    Original     		SLD-1026Z SLD-1026Z 2700MHz. ERJ-3EKF3240V EVM-2WSX80B52 ERJ-EKF49R9V ERJ-3EKF1300V 9C06031A2100FKHFT ERJ-3GSY0R00V 600S4R7BT250 ecj2yb1h104k PDF

    600S2R7BT250XT

    Abstract: ERT-J1VV104J transistor smd 303 IC 2030 schematic diagram 850 SMD Rework Station thermistor 100k sld1026 smd transistor r32 600L270 r5 t85
    Text: Preliminary SLD-1026Z Product Description Sirenza Microdevices’ SLD-1026Z is a robust 3 Watt high performance LDMOS transistor designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency


    Original     		SLD-1026Z SLD-1026Z 2700MHz. SOF-26 AN-090, EDS-104157 600S2R7BT250XT ERT-J1VV104J transistor smd 303 IC 2030 schematic diagram 850 SMD Rework Station thermistor 100k sld1026 smd transistor r32 600L270 r5 t85 PDF

    XD010-22S-D2FY

    Abstract: GSM repeater circuit Rogers 4350 datasheet XD010-22S-D2F AN060
    Text: XD010-22S-D2F XD010-22S-D2FY Product Description Sirenza Microdevices’ XD010-22S-D2F 12W power module is a robust 2stage Class A/AB amplifier module for use in the driver stages of GSM/ EDGE RF power amplifiers for cellular base stations. The power transistors


    Original     		XD010-22S-D2F XD010-22S-D2FY XD010-22S-D2F XD010-EVAL) EDS-102930 AN-060 XD010-22S-D2FY GSM repeater circuit Rogers 4350 datasheet AN060 PDF

    XD010-24S-D2FY

    Abstract: Rogers 4350 datasheet AN060 XD010-24S-D2F
    Text: XD010-24S-D2F XD010-24S-D2FY Product Description Sirenza Microdevices’ XD010-24S-D2F 12W power module is a robust 2stage Class A/AB amplifier module for use in the driver stages of CDMA RF power amplifiers. The power transistors are fabricated using Sirenza’s


    Original     		XD010-24S-D2F XD010-24S-D2FY XD010-24S-D2F XD010-EVAL) EDS-102932 AN-060 XD010-24S-D2FY Rogers 4350 datasheet AN060 PDF

    Untitled

    Abstract: No abstract text available
    Text: XD010-24S-D2F XD010-24S-D2FY Product Description Sirenza Microdevices’ XD010-24S-D2F 12W power module is a robust 2stage Class A/AB amplifier module for use in the driver stages of CDMA RF power amplifiers. The power transistors are fabricated using Sirenza’s


    Original     		XD010-24S-D2F XD010-24S-D2FY XD010-EVAL) EDS-102932 AN-060 PDF

    GSM repeater circuit

    Abstract: Rogers 4350 datasheet AN060 XD010-24S-D2F
    Text: XD010-24S-D2F 1930-1990 MHz Class A/AB 12W CDMA Driver Amplifier Product Description Sirenza Microdevices’ XD010-24S-D2F 12W power module is a robust 2stage Class A/AB amplifier module for use in the driver stages of CDMA RF power amplifiers. The power transistors are fabricated using Sirenza’s


    Original     		XD010-24S-D2F XD010-24S-D2F XD010-EVAL) EDS-102932 AN-060 GSM repeater circuit Rogers 4350 datasheet AN060 PDF

    GSM repeater circuit

    Abstract: EDS-102930 repeater gsm Rogers 4350 datasheet AN060 XD010-22S-D2F GSM repeater power amplifier module
    Text: XD010-22S-D2F 1805-1880 MHz Class A/AB 12W Power Amplifier Module Product Description Sirenza Microdevices’ XD010-22S-D2F 12W power module is a robust 2stage Class A/AB amplifier module for use in the driver stages of GSM/ EDGE RF power amplifiers for cellular base stations. The power transistors


    Original     		XD010-22S-D2F XD010-22S-D2F XD010-EVAL) EDS-102930 AN-060 GSM repeater circuit repeater gsm Rogers 4350 datasheet AN060 GSM repeater power amplifier module PDF

    Untitled

    Abstract: No abstract text available
    Text: XD010-12S-D4F XD010-12S-D4FY Product Description Sirenza Microdevices’ XD010-12S-D4F 15W power module is a robust 2stage Class A/AB amplifier module for use in the driver stages of cellular base station power amplifiers. The power transistors are fabricated using


    Original     		XD010-12S-D4F XD010-12S-D4FY XD010-EVAL) EDS-102934 AN-060 PDF

    200 watt schematics power amp

    Abstract: 80021 GSM repeater circuit Rogers 4350 datasheet XD010-12S-D4F AN060
    Text: XD010-12S-D4F Product Description Sirenza Microdevices’ XD010-12S-D4F 15W power module is a robust 2stage Class A/AB amplifier module for use in the driver stages of cellular base station power amplifiers. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. It is a drop-in, no-tune,


    Original     		XD010-12S-D4F XD010-12S-D4F XD010-EVAL) EDS-102934 AN-060 200 watt schematics power amp 80021 GSM repeater circuit Rogers 4350 datasheet AN060 PDF

    thermal compound wps II

    Abstract: thermal compound wps philips resistor 2322-195 austerlitz heatsink catalogue transistor 6 pin SMD Z2 transistor SMD Z2 BGF1901-10 GSM1900 SR200
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF1901-10 GSM1900 EDGE power module Product specification Supersedes data of 2003 Nov 17 2004 Oct 11 Philips Semiconductors Product specification GSM1900 EDGE power module BGF1901-10 FEATURES PINNING - SOT365C • Typical GSM EDGE performance at a supply voltage of


    Original     		M3D737 BGF1901-10 GSM1900 OT365C SCA76 R02/02/pp11 thermal compound wps II thermal compound wps philips resistor 2322-195 austerlitz heatsink catalogue transistor 6 pin SMD Z2 transistor SMD Z2 BGF1901-10 SR200 PDF

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Description Sirenza Microdevices’ XD010-42S-D4F 8W power module is a robust 2stage Class A amplifier module for use in the driver stages of linear RF power amplifiers of cellular base stations. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. This unit


    Original     		XD010-42S-D4F XD010-42S-D4FY XD010-EVAL) EDS-102938 AN-060 PDF

    Repeater rf

    Abstract: Rogers 4350 datasheet schematic diagram 800 watt power amplifier XD010-42S-D4F GSM 900 mhz repeater circuit
    Text: XD010-42S-D4F Product Description Sirenza Microdevices’ XD010-42S-D4F 8W power module is a robust 2stage Class A amplifier module for use in the driver stages of linear RF power amplifiers of cellular base stations. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. This unit


    Original     		XD010-42S-D4F XD010-42S-D4F XD010-EVAL) EDS-102938 AN-060 Repeater rf Rogers 4350 datasheet schematic diagram 800 watt power amplifier GSM 900 mhz repeater circuit PDF

    GSM repeater circuit

    Abstract: Rogers 4350 datasheet base station power amp GSM repeater GSM repeater power amplifier module RF MODULE XD010-42S-D4F er35
    Text: Product Description Sirenza Microdevices’ XD010-42S-D4F 8W power module is a robust 2stage Class A amplifier module for use in the driver stages of linear RF power amplifiers of cellular base stations. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. This unit


    Original     		XD010-42S-D4F XD010-42S-D4F XD010-42S-D4FY XD010-EVAL) EDS-102938 AN-060 GSM repeater circuit Rogers 4350 datasheet base station power amp GSM repeater GSM repeater power amplifier module RF MODULE er35 PDF

    NTC 220-11

    Abstract: PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,


    Original     		transisto25-735. NTC 220-11 PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide PDF

    BGF901-20

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF901-20 GSM900 EDGE power module Product specification 2003 Jun 13 Philips Semiconductors Product specification GSM900 EDGE power module BGF901-20 PINNING - SOT365C FEATURES • Typical GSM EDGE performance at a supply voltage of


    Original     		M3D737 BGF901-20 GSM900 SCA75 613524/01/pp12 PDF

    thermal compound wps II

    Abstract: austerlitz ACPR750 BGF802-20 CDMA800 RO5880 MBL257
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF802-20 CDMA800 power module Product specification Supersedes data of 2003 Feb 24 2003 Jun 13 Philips Semiconductors Product specification CDMA800 power module BGF802-20 FEATURES PINNING - SOT365C • Typical CDMA IS95 performance at a supply voltage of


    Original     		M3D737 BGF802-20 CDMA800 OT365C SCA75 613524/05/pp12 thermal compound wps II austerlitz ACPR750 BGF802-20 RO5880 MBL257 PDF

    ACPR750

    Abstract: BGF802-20 CDMA800
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF802-20 CDMA800 power module Product specification Supersedes data of 2003 Jun 13 2005 Jun 03 Philips Semiconductors Product specification CDMA800 power module BGF802-20 FEATURES PINNING - SOT365C • Typical CDMA IS95 performance at a supply voltage of


    Original     		M3D737 BGF802-20 CDMA800 OT365C SCA76 R02/06/pp12 ACPR750 BGF802-20 PDF

    Untitled

    Abstract: No abstract text available
    Text: AN11183 Mounting and soldering of RF transistors in over-molded plastic packages Rev. 1 — 6 November 2012 Application note Document information Info Content Keywords Over-Molded Plastic OMP packages, heat sink, footprint, surface mount, reflow soldering, component handling, exposed heat spreader, SMDP,


    Original     		AN11183 PDF