LINEAR TECHNOLOGY mark code
Abstract: No abstract text available
Text: LD7129 8/27/2004 Single Synchronous Buck PWM and Linear Power Controller General Description Features The LD7129 consists of the dual-output power controller and • Controller Operates from 5V and 12V the protection circuits in a single SOP-14 packaged chip for
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LD7129
LD7129
OP-14
600KHz
LD7129-DS-02
LINEAR TECHNOLOGY mark code
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Untitled
Abstract: No abstract text available
Text: GM23C8000A LG Semicon Co.,Ltd. 1,048,576 w o r d s x 8 b i t CMOS MASK ROM Pin Configuration Description 32 DIP/SOP The GM23C8000A high performance read only memory is organized as 1,048,576 x 8 bits and has an access time of 120/150ns. The GM23C8000A offers
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GM23C8000A
GM23C8000A
120/150ns.
A0-A19
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GM23C4100B
Abstract: ORD 1114 GM23C4100B-15 GM23C4100B-12
Text: @ LG Semicon. Co. LTD Description The GM23C4100B high performance read only memory is organized either as 524,288 x 8 bits byte mode or 262,144 x 16 b its (w ord m ode) fo llo w e d by BH E m ode s e le c t. The GM23C4100B offers automatic power down controlled by the make
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GM23C4100B
or40pin
A0-A17are
015/A-1
402A7S7
ORD 1114
GM23C4100B-15
GM23C4100B-12
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD Description Pin Configuration 32 DIP/SOP The GM23C8000B high performance read only memory is organised as 1,048,576 x 8 bits and has an access time of 120ns. The GM23C8000B offers automatic power down controlled by the mask programmed CE or CE input. The low power feature
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GM23C8000B
120ns.
120ns
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GM23C8100BFW
Abstract: 23C8100B
Text: @ LG Semicon. Co. LTD Description The GM23C8100B high performance read only memory is organized either as 1,048,576 x 8 byte mode or 524,288 x 16 bits (word mode) and has an access time of 120/15Qns. The GM23C8100B offers automatic power down controlled by the mask
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GM23C8100B
120/15Qns.
IDA14
A0-A18
015/A-l
MD2B757
0004fl32
GM23C8100BFW
23C8100B
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD Description Fin Configuration The GM23C16050 high performance read only memory is organized either as 2,097,152 x 8 bit Byte Mode or as 1,048,576 x 16 bit (Word Mode) followed by BHE mode select. The GM23C16050 offers automatic power down controlled by the mask
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GM23C16050
600mil
GM23C16050FW
QQD47SC
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description The GM 23C4000B high perform ance read only memory is organized either as 524,288 x 8 bits and has an access time of 100/120/150ns. The GM23C4000B offers automatic power down controlled by the make programmed CE or CE input. The low
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GM23C4000B
100/120/150ns.
23C4000B
32pin
100pF*
40E8757
DD0476D
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GM23C32000
Abstract: GM23C32000A
Text: GM23C32000AFW LG Semicon Co.,Ltd. 4M x 8 / 2M x 16 BIT CMOS MASK ROM Description Pin Configuration The GM23C32000AFW high performance read only memory is organized either as 4,194,304 x 8 bite mode or 2,097,152 x 16 bits (word mode) and has an access time of
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GM23C32000AFW
120/150ns.
GM23C32000AFW
120/1ess.
015/A
GM23C32000FW
GM23C32000
GM23C32000A
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Untitled
Abstract: No abstract text available
Text: G M 2 3 C 10 0 0 LG Semicon Co.,Ltd. 131,072 WORDS x 8 BIT CMOS MASK ROM Description Pin Configuration The GM23C1000 is high performance read only memory organized as 131,072 words by 8 bits. It is designed to be compatible with all micro-processors and similar applications
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GM23C1000
GM23C1000
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GM23C32200AFW
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Pin Configuration The GM23C32200AFW high perform ance read only memory is organized either as 4,194,304 x 8 byte mode or 2,097,152 x 16 bits (word mode) and has an access time of 120/150ns. It needs no external control clock to assure
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GM23C32200AFW
120/150ns.
44SOP,
015/A
D0Q4770
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LG 631 IC
Abstract: ic lg 631
Text: @ LG Semicon. Co. LTD. Description Pin Configuration The GM23C64000FW high performance read only memory is organized either as 8,388,606 x 8 byte mode or 4,194,304 x 16 bits (word mode) and has an access time of 120/150ns. It needs no external control clock to assure
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GM23C64000FW
120/150ns.
44SOP,
A0-A21
015/A-l
Xi-270)
4QEfl757
LG 631 IC
ic lg 631
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Fin Configuration The GM23C64050FW high perfonnance read only memory is organized either as 8,388,606 x 8 byte mode or 4,194,304 x 16 bits (word mode) and has an access time of 120/150ns. It needs no external control clock to assure
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GM23C64050FW
120/150ns.
44SOP,
A3-A20
000Sb02
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Untitled
Abstract: No abstract text available
Text: G M 23C 16000B LG Semicon Co.,Ltd. 2M x 8 / IM x 16 BIT CMOS M ASK ROM Description Pin Configuration The GM23C16000B high performance read only memory is organized either as 2,097,152 x 8 bit Byte Mode or as 1,048,576 x 16 bit (Word Mode) followed by BHE mode select.
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GM23C16000B
16000B
GM23C16000B
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Pin Configuration The GM23C16000B high performance read only memory is organized either as 2,097,152 x 8 bit Byte Mode or as 1,048,576 x 16 bit (Word Mode) followed by BHE mode select The GM23C16000B offers automatic power down controlled by
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GM23C16000B
0GG474Û
000475Q
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Untitled
Abstract: No abstract text available
Text: GM23C16050 LG Semicon Co.,Ltd. 2 M x 8 / IM x 16 BIT CMOS MASK ROM Pin Configuration Description The GM23C16050 high performance read only memory is organized either as 2,097,152 x 8 bit Byte Mode or as 1,048,576 x 16 bit (Word Mode) followed by BHE mode select. The
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GM23C16050
600mil
GM23C16050FW
GM23C16050
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siemens package outline dip
Abstract: No abstract text available
Text: SIEMENS LS T679 y e l l o w LY T679 g r e e n LG T679 SUPER-RED Low Current TOPLED Lamp FEATURES • TOPLEO: surface mount LED lamp • PL-CC-2 package • White package, colorless clear window • Use as optical indicator Characteristics TA=25°C, all values typical unless otherwise noted
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18-pln
fl535t
siemens package outline dip
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Untitled
Abstract: No abstract text available
Text: SIEMENS LS M779 y e l l o w LY M779 g r e e n LG M779 s u p e r -r e d Low Current Reverse Guliwing Mini TOPLED Lamp FEATURES • Mini TOPLED: surface mount LED lamp • White package, colorless clear window • Use as optical indicator • For backlighting, optical coupling into light
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18-pln
fl535t
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SMD 015 lg
Abstract: C870 OHLQ2146
Text: SIEMENS LS C870 ORANGE LO C870 YELLOW LY C870 GREEN LG C870 PURE GREEN LP C870 super red Mini SIDELED Lamp Dimensions in inches mm .228 (5.8) .212 (5.4) i_ .063 (1.6) .047 (1.2) ♦ -T— I fa 0-.004 (O-ÿ.1) .024 (0.6) I “ 7 .016 (0 .4 1 * 047 (1.2)
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18-pln
SMD 015 lg
C870
OHLQ2146
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Untitled
Abstract: No abstract text available
Text: LS S260-DO y e llo w LY S260-DO GREEN LG S260-DO SUPER-RED/GREEN LU S250-DO SUPER-RED/SUPER-RED LV S260-DO GREEN/GREEN LW S260-DO SIEMENS SUPER-RED SOT23 Surface Mount MULTILED LED Lamp FEATURES • Colored, diffused package - LU: colorless - L.V/LS: red
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S260-DO
S250-DO
18-pln
fl535t
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Untitled
Abstract: No abstract text available
Text: SIEMENS LSS T670 ORANGE/ORANGE LOO T670 YELLOW/YELLOW LYY T670 GREEN/GREEN LGG T670 PURE GREEN/PURE GREEN LPP T670 SUPER-RED/SUPER-RED Multi TOPLED Lamp Dimensions in inches mm .118(3.0) .102(2.6) .091 (2.3) _ 083 (2.1} 067(1.7)' .004 (0.1) ty p athode
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18-pin
fl535t
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Untitled
Abstract: No abstract text available
Text: SIEMENS LS C870 ORANGE LO C870 YELLOW LY C870 GREEN LG C870 PURE GREEN LP C870 super red Mini SIDELED Lamp Dimensions in inches mm .228 (5.8) .212 (5.4) i_ .063 (1.6) .047 (1.2) ♦ -T— I 0-.004 (O-ÿ.1) fa .024 (0.6) I “ 7 .016 (0 .4 1 * 047 (1.2)
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18-pln
fl535t
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Untitled
Abstract: No abstract text available
Text: LS P380 ORANGE LO P380 YELLOW LY P380 GREEN LG P380 PURE GREEN LP P380 SIEM ENS SUPER-RED Plane Flat Top T1 3 mm LED Lamp Dimensions in inches (mm) Surface not flat— > .100 016 (0 41 028 (0 7> (2.54) 01 |(D 4) .016^(0.4) .122(3.1) T I 142 (3.6) 126 (3.2)
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tra022
18-pln
fl535t
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GM76C512
Abstract: GM76C512L gm76c512-70
Text: GM76C512/L/LL LG Semicon Co.,Ltd. 65,536 WORDS x 8 BIT CMOS STATIC RAM Description Pin Configuration The GM76C512/L/LL is a 524,288 bits static random access memory organized as 65,536 words by 8 bits. Using a 0.8«m advanced CMOS technology, it provides high speed operation with
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GM76C512/L/LL
55/70/85/100ns.
32-pin
600mil)
GM76C512/L/LL
GM76C512
GM76C512L
gm76c512-70
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battery c-s2
Abstract: 76C8128 566 function
Text: GM76C8128BSL LG Semicon Co.,Ltd. 131,072 WORDS x 8 BIT CMOS STATIC RAM Description Pin Configuration The GM76C8128SL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits. Using a 0.7«m advanced CMOS technology and it provides high speed operation with minimum
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GM76C8128BSL
GM76C8128SL
55/70/85ns.
76C8128BSL
32-pin
600mil)
525mil)
28BSL
battery c-s2
76C8128
566 function
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