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    SOP-8 FOR LG Search Results

    SOP-8 FOR LG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    SOP-8 FOR LG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LINEAR TECHNOLOGY mark code

    Abstract: No abstract text available
    Text: LD7129 8/27/2004 Single Synchronous Buck PWM and Linear Power Controller General Description Features The LD7129 consists of the dual-output power controller and • Controller Operates from 5V and 12V the protection circuits in a single SOP-14 packaged chip for


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    PDF LD7129 LD7129 OP-14 600KHz LD7129-DS-02 LINEAR TECHNOLOGY mark code

    Untitled

    Abstract: No abstract text available
    Text: GM23C8000A LG Semicon Co.,Ltd. 1,048,576 w o r d s x 8 b i t CMOS MASK ROM Pin Configuration Description 32 DIP/SOP The GM23C8000A high performance read only memory is organized as 1,048,576 x 8 bits and has an access time of 120/150ns. The GM23C8000A offers


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    PDF GM23C8000A GM23C8000A 120/150ns. A0-A19

    GM23C4100B

    Abstract: ORD 1114 GM23C4100B-15 GM23C4100B-12
    Text: @ LG Semicon. Co. LTD Description The GM23C4100B high performance read only memory is organized either as 524,288 x 8 bits byte mode or 262,144 x 16 b its (w ord m ode) fo llo w e d by BH E m ode s e le c t. The GM23C4100B offers automatic power down controlled by the make


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    PDF GM23C4100B or40pin A0-A17are 015/A-1 402A7S7 ORD 1114 GM23C4100B-15 GM23C4100B-12

    Untitled

    Abstract: No abstract text available
    Text: @ LG Semicon. Co. LTD Description Pin Configuration 32 DIP/SOP The GM23C8000B high performance read only memory is organised as 1,048,576 x 8 bits and has an access time of 120ns. The GM23C8000B offers automatic power down controlled by the mask programmed CE or CE input. The low power feature


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    PDF GM23C8000B 120ns. 120ns

    GM23C8100BFW

    Abstract: 23C8100B
    Text: @ LG Semicon. Co. LTD Description The GM23C8100B high performance read only memory is organized either as 1,048,576 x 8 byte mode or 524,288 x 16 bits (word mode) and has an access time of 120/15Qns. The GM23C8100B offers automatic power down controlled by the mask


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    PDF GM23C8100B 120/15Qns. IDA14 A0-A18 015/A-l MD2B757 0004fl32 GM23C8100BFW 23C8100B

    Untitled

    Abstract: No abstract text available
    Text: @ LG Semicon. Co. LTD Description Fin Configuration The GM23C16050 high performance read only memory is organized either as 2,097,152 x 8 bit Byte Mode or as 1,048,576 x 16 bit (Word Mode) followed by BHE mode select. The GM23C16050 offers automatic power down controlled by the mask


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    PDF GM23C16050 600mil GM23C16050FW QQD47SC

    Untitled

    Abstract: No abstract text available
    Text: @ LG Semicon. Co. LTD. Description The GM 23C4000B high perform ance read only memory is organized either as 524,288 x 8 bits and has an access time of 100/120/150ns. The GM23C4000B offers automatic power down controlled by the make programmed CE or CE input. The low


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    PDF GM23C4000B 100/120/150ns. 23C4000B 32pin 100pF* 40E8757 DD0476D

    GM23C32000

    Abstract: GM23C32000A
    Text: GM23C32000AFW LG Semicon Co.,Ltd. 4M x 8 / 2M x 16 BIT CMOS MASK ROM Description Pin Configuration The GM23C32000AFW high performance read only memory is organized either as 4,194,304 x 8 bite mode or 2,097,152 x 16 bits (word mode) and has an access time of


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    PDF GM23C32000AFW 120/150ns. GM23C32000AFW 120/1ess. 015/A GM23C32000FW GM23C32000 GM23C32000A

    Untitled

    Abstract: No abstract text available
    Text: G M 2 3 C 10 0 0 LG Semicon Co.,Ltd. 131,072 WORDS x 8 BIT CMOS MASK ROM Description Pin Configuration The GM23C1000 is high performance read only memory organized as 131,072 words by 8 bits. It is designed to be compatible with all micro-processors and similar applications


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    PDF GM23C1000 GM23C1000

    GM23C32200AFW

    Abstract: No abstract text available
    Text: @ LG Semicon. Co. LTD. Description Pin Configuration The GM23C32200AFW high perform ance read only memory is organized either as 4,194,304 x 8 byte mode or 2,097,152 x 16 bits (word mode) and has an access time of 120/150ns. It needs no external control clock to assure


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    PDF GM23C32200AFW 120/150ns. 44SOP, 015/A D0Q4770

    LG 631 IC

    Abstract: ic lg 631
    Text: @ LG Semicon. Co. LTD. Description Pin Configuration The GM23C64000FW high performance read only memory is organized either as 8,388,606 x 8 byte mode or 4,194,304 x 16 bits (word mode) and has an access time of 120/150ns. It needs no external control clock to assure


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    PDF GM23C64000FW 120/150ns. 44SOP, A0-A21 015/A-l Xi-270) 4QEfl757 LG 631 IC ic lg 631

    Untitled

    Abstract: No abstract text available
    Text: @ LG Semicon. Co. LTD. Description Fin Configuration The GM23C64050FW high perfonnance read only memory is organized either as 8,388,606 x 8 byte mode or 4,194,304 x 16 bits (word mode) and has an access time of 120/150ns. It needs no external control clock to assure


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    PDF GM23C64050FW 120/150ns. 44SOP, A3-A20 000Sb02

    Untitled

    Abstract: No abstract text available
    Text: G M 23C 16000B LG Semicon Co.,Ltd. 2M x 8 / IM x 16 BIT CMOS M ASK ROM Description Pin Configuration The GM23C16000B high performance read only memory is organized either as 2,097,152 x 8 bit Byte Mode or as 1,048,576 x 16 bit (Word Mode) followed by BHE mode select.


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    PDF GM23C16000B 16000B GM23C16000B

    Untitled

    Abstract: No abstract text available
    Text: @ LG Semicon. Co. LTD. Description Pin Configuration The GM23C16000B high performance read only memory is organized either as 2,097,152 x 8 bit Byte Mode or as 1,048,576 x 16 bit (Word Mode) followed by BHE mode select The GM23C16000B offers automatic power down controlled by


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    PDF GM23C16000B 0GG474Û 000475Q

    Untitled

    Abstract: No abstract text available
    Text: GM23C16050 LG Semicon Co.,Ltd. 2 M x 8 / IM x 16 BIT CMOS MASK ROM Pin Configuration Description The GM23C16050 high performance read only memory is organized either as 2,097,152 x 8 bit Byte Mode or as 1,048,576 x 16 bit (Word Mode) followed by BHE mode select. The


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    PDF GM23C16050 600mil GM23C16050FW GM23C16050

    siemens package outline dip

    Abstract: No abstract text available
    Text: SIEMENS LS T679 y e l l o w LY T679 g r e e n LG T679 SUPER-RED Low Current TOPLED Lamp FEATURES • TOPLEO: surface mount LED lamp • PL-CC-2 package • White package, colorless clear window • Use as optical indicator Characteristics TA=25°C, all values typical unless otherwise noted


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    PDF 18-pln fl535t siemens package outline dip

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS LS M779 y e l l o w LY M779 g r e e n LG M779 s u p e r -r e d Low Current Reverse Guliwing Mini TOPLED Lamp FEATURES • Mini TOPLED: surface mount LED lamp • White package, colorless clear window • Use as optical indicator • For backlighting, optical coupling into light


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    PDF 18-pln fl535t

    SMD 015 lg

    Abstract: C870 OHLQ2146
    Text: SIEMENS LS C870 ORANGE LO C870 YELLOW LY C870 GREEN LG C870 PURE GREEN LP C870 super red Mini SIDELED Lamp Dimensions in inches mm .228 (5.8) .212 (5.4) i_ .063 (1.6) .047 (1.2) ♦ -T— I fa 0-.004 (O-ÿ.1) .024 (0.6) I “ 7 .016 (0 .4 1 * 047 (1.2)


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    PDF 18-pln SMD 015 lg C870 OHLQ2146

    Untitled

    Abstract: No abstract text available
    Text: LS S260-DO y e llo w LY S260-DO GREEN LG S260-DO SUPER-RED/GREEN LU S250-DO SUPER-RED/SUPER-RED LV S260-DO GREEN/GREEN LW S260-DO SIEMENS SUPER-RED SOT23 Surface Mount MULTILED LED Lamp FEATURES • Colored, diffused package - LU: colorless - L.V/LS: red


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    PDF S260-DO S250-DO 18-pln fl535t

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS LSS T670 ORANGE/ORANGE LOO T670 YELLOW/YELLOW LYY T670 GREEN/GREEN LGG T670 PURE GREEN/PURE GREEN LPP T670 SUPER-RED/SUPER-RED Multi TOPLED Lamp Dimensions in inches mm .118(3.0) .102(2.6) .091 (2.3) _ 083 (2.1} 067(1.7)' .004 (0.1) ty p athode


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    PDF 18-pin fl535t

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS LS C870 ORANGE LO C870 YELLOW LY C870 GREEN LG C870 PURE GREEN LP C870 super red Mini SIDELED Lamp Dimensions in inches mm .228 (5.8) .212 (5.4) i_ .063 (1.6) .047 (1.2) ♦ -T— I 0-.004 (O-ÿ.1) fa .024 (0.6) I “ 7 .016 (0 .4 1 * 047 (1.2)


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    PDF 18-pln fl535t

    Untitled

    Abstract: No abstract text available
    Text: LS P380 ORANGE LO P380 YELLOW LY P380 GREEN LG P380 PURE GREEN LP P380 SIEM ENS SUPER-RED Plane Flat Top T1 3 mm LED Lamp Dimensions in inches (mm) Surface not flat— > .100 016 (0 41 028 (0 7> (2.54) 01 |(D 4) .016^(0.4) .122(3.1) T I 142 (3.6) 126 (3.2)


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    PDF tra022 18-pln fl535t

    GM76C512

    Abstract: GM76C512L gm76c512-70
    Text: GM76C512/L/LL LG Semicon Co.,Ltd. 65,536 WORDS x 8 BIT CMOS STATIC RAM Description Pin Configuration The GM76C512/L/LL is a 524,288 bits static random access memory organized as 65,536 words by 8 bits. Using a 0.8«m advanced CMOS technology, it provides high speed operation with


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    PDF GM76C512/L/LL 55/70/85/100ns. 32-pin 600mil) GM76C512/L/LL GM76C512 GM76C512L gm76c512-70

    battery c-s2

    Abstract: 76C8128 566 function
    Text: GM76C8128BSL LG Semicon Co.,Ltd. 131,072 WORDS x 8 BIT CMOS STATIC RAM Description Pin Configuration The GM76C8128SL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits. Using a 0.7«m advanced CMOS technology and it provides high speed operation with minimum


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    PDF GM76C8128BSL GM76C8128SL 55/70/85ns. 76C8128BSL 32-pin 600mil) 525mil) 28BSL battery c-s2 76C8128 566 function