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    SOT111 Search Results

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    SOT111 Price and Stock

    Nexperia PMCPB5530X,115

    MOSFETs SOT1118 DUAL CHAN 20V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI PMCPB5530X,115 Reel 57,000 3,000
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    • 10000 $0.141
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    Nexperia PBSS5255PAPS-QX

    Bipolar Transistors - BJT PBSS5255PAPS-Q/SOT1118/HUSON6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI PBSS5255PAPS-QX Reel 6,000 3,000
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    • 10000 $0.221
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    Nexperia PBSS4260PAN,115

    Bipolar Transistors - BJT TRANS-SML SIGNAL SOT1118/HUSON
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI PBSS4260PAN,115 Reel 3,000 3,000
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    • 10000 $0.167
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    Nexperia PMDPB30XN,115

    MOSFETs SOT1118 N CHAN 20V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI PMDPB30XN,115 Reel 3,000 3,000
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    • 10000 $0.114
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    Nexperia NCR420PASX

    LED Lighting Drivers NCR420PAS/SOT1118/HUSON6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI NCR420PASX Reel 6,000
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    • 10000 $0.151
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    SOT111 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SOT1110A NXP Semiconductors Flanged LDMOST ceramic package; 2 mounting holes; 8 leads Original PDF
    SOT1113-1_118 NXP Semiconductors HVQFN44; reel pack; SMD; 13"; standard product orientation; Orderable part number ending, 118 or J; Orderable code (12NC) ending 118 Original PDF
    SOT1114-1 NXP Semiconductors Plastic thermal enhanced very very thin quad flat package; no leads; 56 terminals; resin based; body 7 x 7 x 0.7 mm Original PDF
    SOT1115 NXP Semiconductors extremely thin small outline package; no leads; 6 terminals Original PDF
    SOT1115_132 NXP Semiconductors Reversed product orientation 12NC ending 132 Original PDF
    SOT1116 NXP Semiconductors extremely thin small outline package; no leads; 8 terminals Original PDF
    SOT1118 NXP Semiconductors Footprint for reflow soldering SOT1118 Original PDF
    SOT1118 NXP Semiconductors Plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals; body 2 x 2 x 0.65 mm Original PDF
    SOT1118_115 NXP Semiconductors DFN2020-6; reel pack; standard orientation; 12NC ending 115 Original PDF
    SOT1119-1 NXP Semiconductors Plastic thermal enhanced ball grid array package; 432 balls; heatsink Original PDF

    SOT111 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Package outline XSON6: extremely thin small outline package; no leads; 6 terminals; body 0.9 x 1.0 x 0.35 mm 1 SOT1115 b 3 2 4x (2) L L1 e 6 5 4 e1 e1 (6×)(2) A1 A D E terminal 1 index area 0.5 Dimensions Unit mm 1 mm scale A(1) A1 b D E e max 0.35 0.04 0.20 0.95 1.05


    Original     		PDF OT1115 sot1115

    Untitled

    Abstract: No abstract text available
    Text: DF N2 020 -6 PBSS4160PANP 60 V, 1 A NPN/PNP low VCEsat BISS transistor 14 January 2013 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS4160PANP DFN2020-6 OT1118) PBSS4160PAN. PBSS5160PAP. AEC-Q101

    SNW-FQ-611

    Abstract: KKA6107Q
    Text: KKA6107Q Triple video output amplifier GENERAL DESCRIPTION The KKA6107Q includes three video output amplifiers in one plastic DIL-bent-SIL 9-pin medium power DBS9MPF package (SOT111-1), using high-voltage DMOS technology, and is intended to drive the three


    Original     		PDF KKA6107Q KKA6107Q OT111-1) SNW-FQ-611

    DFN2020-6

    Abstract: No abstract text available
    Text: 020 -6 PMDPB55XP DF N2 20 V, dual P-channel Trench MOSFET Rev. 3 — 4 June 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMDPB55XP DFN2020-6 OT1118) DFN2020-6

    marking code 2Q

    Abstract: No abstract text available
    Text: PBSS4260PANP 60 V, 2 A NPN/PNP low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS4260PANP DFN2020-6 OT1118) PBSS4260PAN. PBSS5260PAP. AEC-Q101 marking code 2Q

    NXP SMD TRANSISTOR MARKING CODE s1

    Abstract: No abstract text available
    Text: PMDPB55XP 20 V, dual P-channel Trench MOSFET Rev. 2 — 2 May 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMDPB55XP DFN2020-6 OT1118) NXP SMD TRANSISTOR MARKING CODE s1

    SMD TRANSISTOR MARKING 2e

    Abstract: 2e SMD PNP TRANSISTOR
    Text: PBSS5130PAP 30 V, 1 A PNP/PNP low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS5130PAP DFN2020-6 OT1118) PBSS4130PANP. PBSS4130PAN. AEC-Q101 SMD TRANSISTOR MARKING 2e 2e SMD PNP TRANSISTOR

    npn transistor footprint

    Abstract: No abstract text available
    Text: PBSS4260PAN 60 V, 2 A NPN/NPN low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS4260PAN DFN2020-6 OT1118) PBSS4260PANP. PBSS5260PAP. AEC-Q101 npn transistor footprint

    smd diode marking 2U

    Abstract: smd diode marking codes 2U smd diode code marking 2U marking 2U 28 diode DIODE smd marking 2U diode SMD marking code 2u 2U marking code diode smd smd diode marking 2U 40 marking 2U diode smd
    Text: PMDPB95XNE 30 V dual N-channel Trench MOSFET 26 September 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMDPB95XNE DFN2020-6 OT1118) smd diode marking 2U smd diode marking codes 2U smd diode code marking 2U marking 2U 28 diode DIODE smd marking 2U diode SMD marking code 2u 2U marking code diode smd smd diode marking 2U 40 marking 2U diode smd

    g1 TRANSISTOR SMD MARKING CODE

    Abstract: PMDPB55XP
    Text: PMDPB55XP 20 V, dual P-channel Trench MOSFET Rev. 1 — 9 March 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMDPB55XP OT1118 g1 TRANSISTOR SMD MARKING CODE PMDPB55XP

    SOT1118

    Abstract: PMDPB70XP NXP SMD TRANSISTOR MARKING CODE s1
    Text: PMDPB70XP 30 V, dual P-channel Trench MOSFET Rev. 1 — 9 March 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMDPB70XP OT1118 SOT1118 PMDPB70XP NXP SMD TRANSISTOR MARKING CODE s1

    NXP SMD ic MARKING CODE

    Abstract: No abstract text available
    Text: PBSM5240PF 40 V, 2 A PNP low VCEsat BISS transistor with N-channel Trench MOSFET Rev. 2 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench MOSFET. The device is housed in a leadless medium power SOT1118


    Original     		PDF PBSM5240PF OT1118 NXP SMD ic MARKING CODE

    PMDPB70EN

    Abstract: No abstract text available
    Text: PMDPB70EN 30 V, dual N-channel Trench MOSFET Rev. 1 — 25 April 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMDPB70EN DFN2020-6 OT1118) PMDPB70EN

    p-channel mosfet with diode sot89

    Abstract: PMFPB6532 PMFPB6545 AEC-Q101-qualified PMEG30 MOSFET455 PBSS304PX PMEG3020CPA PMEG4010CPA PMEG2020CPA
    Text: NXP leadless, 2 x 2 mm SOT1061 and SOT1118 packages Fit more functions on a PCB with small, thin medium-power packages These leadless, medium-power SMD packages measure only 2 x 2 x 0.65 mm and provide excellent electrical and thermal performance. They enable high integration for a range of


    Original     		PDF OT1061 OT1118 OT1061) OT1118) ap6545UP PMFPB6532UP p-channel mosfet with diode sot89 PMFPB6532 PMFPB6545 AEC-Q101-qualified PMEG30 MOSFET455 PBSS304PX PMEG3020CPA PMEG4010CPA PMEG2020CPA

    Untitled

    Abstract: No abstract text available
    Text: Package outline HBGA432: plastic thermal enhanced ball grid array package; 432 balls; heatsink SOT1119-1 B D A D1 ball A1 index area E1 j E A2 A A1 detail X e1 e 1/2 e ∅v ∅w b AF AE AD AC AB AA Y W V U T R P N M L K J H G F E D C B A C C A B C y y1 C e


    Original     		PDF HBGA432: OT1119-1 sot1119-1 MS-034

    Untitled

    Abstract: No abstract text available
    Text: DF N2 020 -6 PBSS5160PAP 60 V, 1 A PNP/PNP low VCEsat BISS transistor 23 January 2013 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS5160PAP DFN2020-6 OT1118) PBSS4160PANP. PBSS4160PAN. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: Package outline HUSON6: plastic, thermal enhanced ultra thin small outline package; no leads; 6 terminals; body 2 x 2 x 0.65 mm bp 6x v A B A B D SOT1118 A E A1 terminal 1 index area detail X C terminal 1 index area Lp (6x) y y1 C e 1 3 (8x) E1 (2x) 6 X


    Original     		PDF OT1118 sot1118

    Untitled

    Abstract: No abstract text available
    Text: Package outline HWQFN56R: plastic thermal enhanced very very thin quad flat package; no leads; 56 terminals; resin based; body 7 x 7 x 0.7 mm B D SOT1114-1 A terminal A1 index area E A detail X e1 1/2 e e L1 v w b 15 28 C C A B C y1 C y L 14 29 e e2 Eh 1/2 e


    Original     		PDF HWQFN56R: OT1114-1 sot1114-1

    Untitled

    Abstract: No abstract text available
    Text: PBSM5240PF 40 V, 2 A PNP low VCEsat BISS transistor with N-channel Trench MOSFET Rev. 2 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench MOSFET. The device is housed in a leadless medium power SOT1118


    Original     		PDF PBSM5240PF OT1118

    Untitled

    Abstract: No abstract text available
    Text: Package outline XSON8: extremely thin small outline package; no leads; 8 terminals; body 1.2 x 1.0 x 0.35 mm 1 2 SOT1116 b 4 3 4x (2) L L1 e 8 7 e1 6 e1 5 e1 (8×)(2) A1 A D E terminal 1 index area 0.5 Dimensions Unit mm 1 mm scale A(1) A1 b D E e max 0.35 0.04 0.20 1.25 1.05


    Original     		PDF OT1116 sot1116

    Untitled

    Abstract: No abstract text available
    Text: PBSS4130PANP 30 V, 1 A NPN/PNP low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS4130PANP DFN2020-6 OT1118) PBSS4130PAN. PBSS5130PAP. AEC-Q101

    NXP SMD TRANSISTOR MARKING CODE s1

    Abstract: No abstract text available
    Text: 020 -6 PMDPB58UPE DF N2 20 V dual P-channel Trench MOSFET Rev. 1 — 19 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic


    Original     		PDF PMDPB58UPE DFN2020-6 OT1118) NXP SMD TRANSISTOR MARKING CODE s1

    TRANSISTOR SMD MARKING CODE 2P

    Abstract: DFN2020 transistor marking codes 2P transistor footprint
    Text: PBSS5260PAP 60 V, 2 A PNP/PNP low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS5260PAP DFN2020-6 OT1118) PBSS4260PANP. PBSS4260PAN. AEC-Q101 TRANSISTOR SMD MARKING CODE 2P DFN2020 transistor marking codes 2P transistor footprint

    Untitled

    Abstract: No abstract text available
    Text: NXP PNP low VCEsat BISS/Trench MOSFET module PBSM5240PF in SOT1118 Unique 2-in-1 solution in an ultra-small leadless SOT1118 package This groundbreaking solution enables slim mobile devices and delivers best-in-class thermal performance to support higher currents and longer lifetimes.


    Original     		PDF PBSM5240PF OT1118 OT1118 PBSM5240PF