SOT123 Package
Abstract: SOT123 SOT-123 BFS22A SOT121 Package BFQ43 BFQ43 datasheet BLY93 BLX15 bfq34 application note
Text: DISCRETE SEMICONDUCTORS DATA SHEET Selection guide RF Power Transistors for HF and VHF 1995 Nov 21 File under Discrete Semiconductors, SC08a Philips Semiconductors RF Power Transistors for HF and VHF Selection guide INTRODUCTION The following tables represent our complete range of bipolar and MOS transmitting transistors, grouped according to the
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SC08a
BLV10
OT123
BLY87C/01
SCD45
SOT123 Package
SOT123
SOT-123
BFS22A
SOT121 Package
BFQ43
BFQ43 datasheet
BLY93
BLX15
bfq34 application note
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MRA936
Abstract: BLF276 sot119d sot119d3 TRANSISTOR 0835
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF276 VHF power MOS transistor Product specification December 1997 Philips Semiconductors Product specification VHF power MOS transistor FEATURES BLF276 PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability
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BLF276
MBB072
MSA308
OT119
MRA936
BLF276
sot119d
sot119d3
TRANSISTOR 0835
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potentiometer 502 TJ
Abstract: BLF276 mra843
Text: Philips Semiconductors 00300GÔ □□□ I A P X eliminary specification BLF276 VHF power MOS transistor N AMER PHILIPS/DISCRETE LIE J> PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability DESCRIPTION Silicon N-channel enhancement
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OT119
PINNING-SOT119D3
BLF276
VBB07S-2
MBA379
MRA936
potentiometer 502 TJ
BLF276
mra843
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SOT262
Abstract: power amplifier blf278 BLF378 BGY47 321 SOT BGY145 sot183 BGY43 SOT246
Text: 66 RF/Microwave Devices RF Power MOS Transistors Package Outline Type No. cont. Output Power Sync (W) VDS (V) f (MHz) Power Gain (dB) ^im (dB) >D (mA) 13 r -52 -52 3000 2 x 4600 50 TV TRANSPOSERS (band 3, f = 174-230 MHz, Class A Operation) BLF346 BLF348
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BLF346
BLF348
OT-119,
OT-262,
BLF276
BLF278
BLF248
BLF368
BLF378
OT-119D3,
SOT262
power amplifier blf278
BGY47
321 SOT
BGY145
sot183
BGY43
SOT246
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sot123 package
Abstract: BLF543 BLF221 sot 123 blf246b flange SOT-123
Text: 65 RF/Microwave Devices RF Power MOS Transistors cont. Type No. Package Outline Load Power (W) V DS (V) f (MHz) Source Gain (dB) 28 28 28 28 28 50 28 28 50 28 50 28 50 28 50 175 175 175 175 175 108 175 108 108 108 108 175 108 175 108 14 typ 13 13 13 14 19 typ
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BLF241
BLF242
BLF244
BLF245
BLF245B
BLF175
BLF246B
BLF246
BLF276
BLF147
sot123 package
BLF543
BLF221
sot 123
flange
SOT-123
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Untitled
Abstract: No abstract text available
Text: Concise Catalogue 1996 Philips Semiconductors DISCRETE SEMICONDUCTORS RF power transistors RF & MICROWAVE SEMICONDUCTORS & MODULES RF POWER MOS TRANSISTORS type number PL PEP ^DS (W) (V) G p (dB) package 20.1) 23 20.1) 17 20 SOT123 SOT 123 SOT121 SOT121
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OT123
OT121
BLF145
BLF175
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