transistor marking M04 GHZ
Abstract: m04 marking dual-gate
Text: Short-form preliminary specification Philips Sem iconductors Dual-gate MOS-FET BF904; BF904R FEATURES DESCRIPTION • Specially designed for use at 5 V supply voltage Enhancement type field-effect transistors in plastic micro-miniature SOT143 and SOT143R envelopes.
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BF904;
BF904R
OT143
OT143R
MAM077
OT143)
transistor marking M04 GHZ
m04 marking
dual-gate
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Untitled
Abstract: No abstract text available
Text: Short-form product specification Philips Semiconductors BF990A Silicon N-channel dual-gate MOS-FET APPLICATIONS • UHF applications such as television tuners with 12 V supply voltage, and professional communications equipment. DESCRIPTION Depletion type field-effect transistor in a plastic SOT143
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BF990A
OT143
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Untitled
Abstract: No abstract text available
Text: BF996S _ J SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended for UHF applications in television tuners. The device is also suitable for use in professional communication equipment.
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BF996S
OT143
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mosfet marking code gg
Abstract: marking g1s marking code g1s
Text: 711002b G 0 b a ? n TTT H P H I N BF997 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected, intended for u.h.f. and v.h.f. applications, such as u.h.f./v.h.f. television
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711002b
BF997
OT143
mosfet marking code gg
marking g1s
marking code g1s
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Untitled
Abstract: No abstract text available
Text: BF994S PHILIPS INTERNATIONAL SbE D 711002b 003407b T1S IPHIN FOR D ETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR D ATASHEET T-?«r-z7 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and
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BF994S
711002b
003407b
OT143
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Philips MARKING CODE
Abstract: Datasheets for BB132 varicap marking code W1 BAT18 A2p sot143 marking code A5 Marking codes sot143 marking code A3 marking A5 sot363 marking W1 S13 SOT363
Text: DISCRETE SEMICONDUCTORS Marking codes Small-signal Field-effect Transistors and Diodes 1999 May 12 Philips Semiconductors Small-signal Field-effect Transistors and Diodes Marking codes Product types in SOT23, SOT143, SOT323, SOT343, SOT363, SOD110, SOD323 and SOD523 packages are marked
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OT143,
OT323,
OT343,
OT363,
OD110,
OD323
OD523
BF992
PMBF4416A
BF510
Philips MARKING CODE
Datasheets for BB132 varicap
marking code W1
BAT18 A2p
sot143 marking code A5
Marking codes
sot143 marking code A3
marking A5 sot363
marking W1
S13 SOT363
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Untitled
Abstract: No abstract text available
Text: • bbS3T31 QQ23ti2S 353 ■ APX BF994S N AP1ER PHILIPS/DISCRETE b7E D J V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended fo r V H F applications in television tuners.
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bbS3T31
QQ23ti2S
BF994S
OT143
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Untitled
Abstract: No abstract text available
Text: 711002b 00^75^4 Til IPHIN BF994S SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended for VHF applications in television tuners. The device is also suitable for use in professional communication equipment.
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711002b
BF994S
OT143
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Untitled
Abstract: No abstract text available
Text: • APX bbSBTBl QD2M73D bT4 N AMER PHILIPS/DISCRETE BF989 b7E D J K. SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected. This M O S-FET tetrode is intended for use in u.h.f. applications in television
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QD2M73D
BF989
OT143
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Untitled
Abstract: No abstract text available
Text: bbS3T31 QDE473T fill « A P X N AKER PHILIPS/DISCRETE BF991 b?E D 7 V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope w ith source and substrate interconnected. This MOS-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.
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bbS3T31
QDE473T
BF991
OT143
OT103
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marking code 11G1
Abstract: No abstract text available
Text: b b S B ' m 0DE4750 462 « A P X N AMER PHILIPS/DISCRETE BF996S b7E » y v . SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended for UHF applications in television tuners.
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0DE4750
BF996S
OT143
marking code 11G1
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marking code 11G1
Abstract: No abstract text available
Text: • bbSB'iai 0024733 3T3 « A P X N AMER PHILIPS/DISCRETE BF990A b7E » SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected, intended for UHF applications, such as UHF television tuners with 12 V
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BF990A
OT143
bb53T31
0Q2473b
marking code 11G1
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BF991
Abstract: G2S-50
Text: I bbSBTBl ÜG2473CÏ f i l l *APX N APIER PHILIPS/DISCRETE BF991 h?E D SIUCON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected. This MOS-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.
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02473cÃ
BF991
OT143
200MHz
SQT103
BF991
G2S-50
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fet dual gate sot143
Abstract: BF990A FET MARKING CODE marking Z7 mosfet depletion 10 marking code dual transistor
Text: BF990A P H I L IPS INTERNATIONAL_ SbE D Bi 7110flSti 0034070 5T7 M P H I N FOR D E TA ILE D INFO R M A TIO N SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATASHEET T-35-Z 7 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 m icrom iniature envelope w ith source and
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BF990A
T-35-Z7
OT143
OT143.
fet dual gate sot143
BF990A
FET MARKING CODE
marking Z7
mosfet depletion
10 marking code dual transistor
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FM02
Abstract: marking ANs bs 159 FET MARKING CODE BF996S BF996
Text: L3E D • 1^53*124 D 0 7 4 3 1 1 MES H S I C 3 B F996S NAPC/PHILIPS SEHICON] FOR D E T A ILE D IN F O R M A TIO N SEE THE LATEST ISSUE OF HAN DBO O K SC07 OR DATASHEET SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope w ith source and
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D074311
BF996S
OT143
FM02
marking ANs
bs 159
FET MARKING CODE
BF996S
BF996
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SMD CODE MARKING s7 SOT23
Abstract: PMBFJ111 PMBFJ174 BSR56 BFT46
Text: SMD FET’s DESCRIPTION • Philips Components surface mount range of FET’s is the most extensive available, and offers low parasitic capacitance, negligible inductance, and reduced board assembly cost. The three categories of FET’s each have its own attributes
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applicat174
PMBFJ175
PMBFJ176
PMBFJ177
OT-23
OT-89
OT-143
OT-223
OT-23
SMD CODE MARKING s7 SOT23
PMBFJ111
PMBFJ174
BSR56
BFT46
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sot-23 Marking M6
Abstract: FET marking codes MOSFET P-channel SOT-23 m6 sot-23 pinout bf992 application FET SOT-223 N-Channel fet m90 BFT46 SFs SOT23 6x marking sot-23 p-channel
Text: SMDFETs DESCRIPTION • Philips Components surface mount range of FET’s is the most extensive available, and offers low parasitic capacitance, negligible inductance, and reduced board assem bly cost. The three categories of FET’s each have its own attributes
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BSP121
BSP126
BSP205
BSP206
BSP220
BSP225
BSR56
BSR57
BSR58
BSS83
sot-23 Marking M6
FET marking codes
MOSFET P-channel SOT-23
m6 sot-23 pinout
bf992 application
FET SOT-223 N-Channel
fet m90
BFT46
SFs SOT23
6x marking sot-23 p-channel
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m8p smd
Abstract: sot-23 MARKING CODE 70.2 fet SMD CODE PACKAGE SOT23 sot-23 MARKING CODE GS PMBF310 Philips fet SOT23 code marking M2P smd marking code MHP smd sot-23 MARKING CODE GS 5 marking 702 sot-23
Text: 11 SMD F E T ’s SMD® FET’s Description Features Philips Components surface mount range of FET’s is the most extensive available, and offers low parasitic capaci tance, negligible inductance, and reduced board assembly cost. The three categories of FET’s each have its own
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OT-23
OT-89
OT-143
OT-223
OT-223
OT-69
m8p smd
sot-23 MARKING CODE 70.2
fet SMD CODE PACKAGE SOT23
sot-23 MARKING CODE GS
PMBF310
Philips fet SOT23 code marking
M2P smd
marking code MHP smd
sot-23 MARKING CODE GS 5
marking 702 sot-23
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38mm2
Abstract: FET 8PIN NF 935 fet dual gate sot143 P01 SOT-89 GaAs FET sot89 KGF1145 KGF2701 KGF1156 KGF1165
Text: OKI Semiconductor RF Devices GaAs MMICs 850MHz 1.9GHz 2.4GHz VDD Typ IDD (Typ) Gain (Min) Power Out (Min) NF/Iso (Max) Labeled Freq. 3V 5V 3V 5V 3V 5V Cascaded FET, 2-stage limiting amp. 5.0V 2.7mA 22dB 2dBm 40dB Iso. 850MHz x √√√ x √ x x High isolation; DC.
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850MHz
OT-143
KGF1155B
KGF1156
MBF9301
849MHz
38mm2
FET 8PIN
NF 935
fet dual gate sot143
P01 SOT-89
GaAs FET sot89
KGF1145
KGF2701
KGF1156
KGF1165
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transistors BC 543
Abstract: 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5
Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
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OT-23
OT-363
OT-143
transistors BC 543
183W
Diode BAW 62
BCR191P
SOT23 BCV 27
TRANSISTOR BC 530
sot-23 p1
diode S6 78A
mmic amplifier sot-89 p4
diode sot 143 s5
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diode S6 78A
Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
Text: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14
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O-92tl
O-92d
diode S6 78A
TRANSISTOR PNP BA RT SOT 89
mmic CEA SOT363
32N45
transistor 6bw
TRANSISTOR BC 545
BF1012S
6bw sot-23
up 6103 s8
6bw 12 transistor
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2907A PNP bipolar transistors
Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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O-92d
2907A PNP bipolar transistors
BC 148 TRANSISTOR DATASHEET
TRANSISTOR BC 450 pnp
diode S6 78A
transistors bf 517
BFG sot89
BC 327 SOT 23
BAS20 SOT23
DIODE TA 70/04
bcp 846
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F1313
Abstract: F-1203 F1283 S0T143 kgf1323 KGF1305s KGF2701
Text: MMICs an d FETs C o m m u n ic a tio n s 5 V A m p l if ie r s and M ix e r s Supply Part Number KGF1145 Description KGF1146 Output Power Idd> 4 /S O P VCO buffer, limiting amp, small signal, self-biased KGF1155B signal m ixer amp 4 /S O P signal m ixer amp
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OT143)
S0T143)
S0T143I
KGF1145
KGF1146
F1145
F1313
F-1203
F1283
S0T143
kgf1323
KGF1305s
KGF2701
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ComChip Date code
Abstract: smd DIODE code marking 20A sot143 Marking code p1 tlp 241 marking code 62 6 pin SMD IEC61000-4-4 SOT14 smd diode marking code 143 sot143 fet smd diode 319
Text: Low Capacitance ESD Protection Array SMD Diodes Specialist CSRS045V0P RoHs Device Features SOT-143 ESD Protected for 2 high speed I/O ports 0.119 3.00 0.110(2.80) IEC61000-4-2 (ESD) ±8kV (Contact) ,±15kV(Air). IEC61000-4-4 (FET)(5/50ns) Level-3, 20A for I/O
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CSRS045V0P
OT-143
IEC61000-4-2
IEC61000-4-4
5/50ns)
IEC61000-4-5
8/20uS)
OT-143
MIL-STD-750
QW-BP012
ComChip Date code
smd DIODE code marking 20A
sot143 Marking code p1
tlp 241
marking code 62 6 pin SMD
IEC61000-4-4
SOT14
smd diode marking code 143
sot143 fet
smd diode 319
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