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    SOT23 MARKING 2S Search Results

    SOT23 MARKING 2S Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    5962-8950303GC Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) Visit Rochester Electronics LLC Buy
    54HC221AJ/883C Rochester Electronics LLC 54HC221AJ/883C - Dual marked (5962-8780502EA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    SOT23 MARKING 2S Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SB624

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.


    Original     		2SB624 200TYP -100mA) 2SD596. OT-23 BL/SSSTC014 2SB624 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR  DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications.  FEATURES *Low collector saturation voltage: VCE SAT =-0.5V(MAX) (IC=-1A)


    Original     		2SA1020 2SA1020 2SC2655 2SA1020L-x-AE3-R 2SA1020G-x-AE3-R 2SA1020L-x-AB3-R 2SA1020G-x-AB3-R 2SA1020L-x-T9N-B 2SA1020G-x-T9N-B 2SA1020L-x-T9N-K PDF

    2SA1020L UTC

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR  DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications.  FEATURES *Low collector saturation voltage: VCE SAT =-0.5V(MAX) (IC=-1A)


    Original     		2SA1020 2SA1020 2SC2655 2SA1020L-x-AE3-R 2SA1020G-x-AE3-R 2SA1020L-x-AB3-R 2SA1020G-x-AB3-R 2SA1020L-x-T9N-B 2SA1020G-x-T9N-B 2SA1020L-x-T9N-K 2SA1020L UTC PDF

    marking BS sot23

    Abstract: marking Bq sot23 2SC2412 Transistor marking BQ marking BQ sot-23 Marking br sot23 Transistor bs sot23 marking BS SOT-23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SC2412 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES • Low Cob ,Cob = 2.0 pF (Typ). 1. BASE 2. EMITTER 3. COLLECTOR MARKING : BQ, BR, BS MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		OT-23 2SC2412 100MHz marking BS sot23 marking Bq sot23 2SC2412 Transistor marking BQ marking BQ sot-23 Marking br sot23 Transistor bs sot23 marking BS SOT-23 PDF

    100HZ

    Abstract: 2SC2714
    Text: 2SC2714 NPN General Purpose Transistors P b Lead Pb -Free SOT-23 ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified） Symbol Parameter Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=10 A,IE=0 40 V Collector-emitter breakdown voltage


    Original     		2SC2714 OT-23 100HZ 19-Feb-09 OT-23 100HZ 2SC2714 PDF

    2SC1623 sot-23

    Abstract: 2SC1623 marking l4 sot-23 marking L6 MARKING L4 L6 sot-23 sot-23 Marking l7 top marking L6 SOT23 MARKING L7
    Text: 2SC1623 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 60 V Emitter-Base Voltage VEBO 5.0 V Collector Current - Continuous IC 100 mA


    Original     		2SC1623 OT-23 02-Aug-06 OT-23 2SC1623 sot-23 2SC1623 marking l4 sot-23 marking L6 MARKING L4 L6 sot-23 sot-23 Marking l7 top marking L6 SOT23 MARKING L7 PDF

    MARKING W2 SOT23 TRANSISTOR

    Abstract: sot23 Transistor marking p2 13000 transistor ta 8268 sot-23 transistor p2 marking 2sc2714qy 0441 3543 amplifier marking AM sot-23 MARKING W3 SOT23 TRANSISTOR
    Text: 2SC2714 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY AMPLIFIER APPLICATIONS AM/FM ,RF,MIX,IF AMPLIFIER APPLICATIONS * High Current Gain Bandwidth Product fT=550MHz Package:SOT-23


    Original     		2SC2714 550MHz OT-23 CHARACTERIST12 600TYP 6614TYP 99221TYP 1102TYP MARKING W2 SOT23 TRANSISTOR sot23 Transistor marking p2 13000 transistor ta 8268 sot-23 transistor p2 marking 2sc2714qy 0441 3543 amplifier marking AM sot-23 MARKING W3 SOT23 TRANSISTOR PDF

    2SA812

    Abstract: Diode marking m7 m6 marking sot-23
    Text: 2SA812 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Symbol Value Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous


    Original     		2SA812 OT-23 08-Dec-06 -10mA OT-23 2SA812 Diode marking m7 m6 marking sot-23 PDF

    MARKING W2 SOT23 TRANSISTOR

    Abstract: ta 8268 sot-23 transistor p2 marking MARKING W3 SOT23 TRANSISTOR sot23 Transistor marking p2 3543 amplifier 2SC2712LT1 2SC2712L MARKING d4 npn sot23 sot-23 Marking LG
    Text: 2SC2712LT1 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. * High Voltage and High Current: Vceo=50V,Ic=150mA Max. Package:SOT-23 * Excellent hFE Linearity: hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.)


    Original     		2SC2712LT1 150mA OT-23 2SA1162 600TYP 6614TYP 99221TYP 1102TYP MARKING W2 SOT23 TRANSISTOR ta 8268 sot-23 transistor p2 marking MARKING W3 SOT23 TRANSISTOR sot23 Transistor marking p2 3543 amplifier 2SC2712LT1 2SC2712L MARKING d4 npn sot23 sot-23 Marking LG PDF

    2sc5344

    Abstract: No abstract text available
    Text: 2SC5344 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO 30 V Collector-Base Voltage VCBO 35 V Emitter-Base Voltage VEBO 5.0 V Collector Current - Continuous IC 800 mA


    Original     		2SC5344 OT-23 08-Dec-08 100MHz OT-23 2sc5344 PDF

    2SA1179

    Abstract: transistor marking 3k
    Text: 2SA1179 -0.15A , -55V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  High breakdown voltage A L 3 3 C B Top View 1 MARKING 1 K Product Marking Code


    Original     		2SA1179 OT-23 -50mA, 28-Jan-2011 -10mA 2SA1179 transistor marking 3k PDF

    2SB1197

    Abstract: No abstract text available
    Text: 2SB1197 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 Features: SOT-23 * High current capacity in compact package. * Epitaxial planar type. * We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS(Ta=25°C) Rating


    Original     		2SB1197 OT-23 OT-23 -500mA, -50mA -100mA -20mA, 100MHz 19-Apr-2011 2SB1197 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD1781K NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 Features: *Very Low VCE(sat) V CE(sat) < 0.4 V (Typ.) (I C / IB = 500mA / 50mA) *High Current Capacity in Compact Package. *Complements The 2SB1197 *We Declare That The Material of Product Compliance With RoHS Requirements.


    Original     		2SD1781K OT-23 500mA 2SB1197 -50mA, 100MHz 14-Nov-2012 PDF

    2SA1037

    Abstract: 2SA1037-S 2SA1037-R 2sa1037r 2SA1037-Q 2SC2412 2SA1037S 2SA1037 R
    Text: 2SA1037 -0.15A, -60V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SOT-23 Excellent hFE linearity. Complements of the 2SC2412 A L 3 3 MECHANICAL DATA C B


    Original     		2SA1037 OT-23 2SC2412 OT-23, 2SA1037-Q 2SA1037-R 2SA1037-S -50mA, 31-Dec-2010 30MHz 2SA1037 2SA1037-S 2SA1037-R 2sa1037r 2SA1037-Q 2SC2412 2SA1037S 2SA1037 R PDF

    2sa733

    Abstract: 2SC945 SOT-23 2SA733 equivalent 2SC945 2SC945 SOT23 2SA733 datasheet 2SC945 DATASHEET transistor marking CS 2SA733 SOT-23
    Text: 2SA733 -60 V, -150mA PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES Complementary of the 2SC945 Collector to base voltage: -60V A L 3 3 MARKING C B Top View


    Original     		2SA733 -150mA OT-23 2SC945 2SA733-L 2SA733-H -10mA 100Hz, 2sa733 2SC945 SOT-23 2SA733 equivalent 2SC945 2SC945 SOT23 2SA733 datasheet 2SC945 DATASHEET transistor marking CS 2SA733 SOT-23 PDF

    2SD602

    Abstract: WR1 marking code transistor marking wr1 sot-23 WR1 SOT23 2SD602AR 2SD602R marking code WR1 transistor marking wr1 2SD602-S 2SD602AS
    Text: 2SD602 / 2SD602A NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE Low collector to emitter saturation voltage VCE sat A L 3 3 CLASSIFICATION OF hFE (1) C B


    Original     		2SD602 2SD602A OT-23 2SD602-Q 2SD602-R 2SD602-S 2SD602A-Q 2SD602A-R 2SD602A-S 150mA WR1 marking code transistor marking wr1 sot-23 WR1 SOT23 2SD602AR 2SD602R marking code WR1 transistor marking wr1 2SD602-S 2SD602AS PDF

    sot-523 ba

    Abstract: 2SA1774 sot23
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1774 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR „ 3 FEATURES 1 2 SOT-23 * Excellent hFE linearity * Complements the UTC 2SC4617 3 2 „ SOT-523 ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free


    Original     		2SA1774 OT-23 2SC4617 OT-523 2SA1774L-x-AE3-R 2SA1774G-x-AE3-R OT-23 2SA1774L-x-AN3-R 2SA1774G-x-AN3-R OT-523 sot-523 ba 2SA1774 sot23 PDF

    2SA1774G

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1774 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR „ 3 FEATURES 1 2 SOT-23 * Excellent hFE linearity * Complements the UTC 2SC4617 3 2 „ SOT-523 ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free


    Original     		2SA1774 OT-23 2SC4617 OT-523 2SA1774L-x-AE3-R 2SA1774G-x-AE3-R OT-23 2SA1774L-x-AN3-R 2SA1774G-x-AN3-R OT-523 2SA1774G PDF

    akr sot-23

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1198 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR „ 3 DESCRIPTION The UTC 2SB1198 is an epitaxial planar type PNP silicon transistor. 2 1 SOT-23 „ FEATURES * High breakdown voltage : BVCEO= -80V * Low VCE sat : VCE(sat)= -0.2V (Typ)


    Original     		2SB1198 2SB1198 OT-23 A/-50mA) OT-23 2SB1198L-x-AE3-R 2SB1198G-x-AE3-R QW-R206-040 akr sot-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SK545 Preliminary JFET IMPEDANCE CONVERTER APPLICATIONS 3 „ DESCRIPTION 2 The UTC 2SK545 is an N-channel Junction field effect transistor. It uses UTC’s advanced technology to provide customers low CISS and low IGSS. The UTC 2SK545 is suitable for infrared sensor and impedance


    Original     		2SK545 2SK545 OT-23 O-236) 2SK545L-xx-AE3-R 2SK545G-xx-AE3-R PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SK508 Preliminary N-CHANNEL JFET HIGH FREQUENCY AMPLIFIER N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR „ 3 2 DESCRIPTION SOT-23 The UTC 2SK508 is NPN transistor with High forward transfer admittance and low input capacitance.


    Original     		2SK508 OT-23 2SK508 O-236) 2SK508L-x-AE3-R 2SK508G-x-AE3-R QW-R206-101 PDF

    2sK303L

    Abstract: 2SK303V3 2SK303V4 2SK303
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SK303 Preliminary JFET LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS 3 2 1 SOT-23 FEATURES „ * Ideal For Potentiometers * Analog Switches * Low Frequency Amplifiers * Constant Current Supplies * Impedance Conversion


    Original     		2SK303 OT-23 OT-23 2SK303L-x-AE3-R 2SK303G-x-AE3-R 2SK303L-x-T92-B 2SK303G-x-T92-B 2SK303L-x-T92-K 2SK303G-x-T92-K 2SK303L-x-T92-R 2sK303L 2SK303V3 2SK303V4 2SK303 PDF

    BD1501

    Abstract: No abstract text available
    Text: •r r m D e v ic e M in 2S0 m 1S0 n A M ax Vfm @ k ( V o lte ) M ax (m A ) Wr Vrrm (n s ) (Vatts) P ackage* ill V RHM ( V o lts ) Diodes Silicon Single Junction Diodes D e v ic e M in M ax 150 VW @ !f (V o lte ) Max Vr (IK ) (m A ) P ackage* M ax 1 IN 4 8 6 B


    OCR Scan     		1S922 BAS20 BAX16 H300A O-236AB r0-236 LL-34 O-236 DO-35 BD1501 PDF

    MLL34

    Abstract: m6 sot-23 pinout sot-23 Marking KN bk sot 23 marking 16 SOT-143 MOTOROLA Cross Reference sot23 MMBT8599 motorola transistor dpak marking BC817-25L BC817-40L
    Text: HOTOROLA SC XSTRS/R F HbZ D • b3b?2S4 DDTbSGl 3 ■ M O T b T ^ X l-O S Bipolar Transistors General-Purpose Transistors Pinout: 1-Base, 2-Em itter, 3-Collector Devices are listed in order of descending breakdown voltage. Marking V(BR)CEO Min ■»FE Max


    OCR Scan     		BC846AT BC846BT BC817-16L BC817-25L BC817-40L BC847AT BC847BT BC847CT BCX70KL BCW72L MLL34 m6 sot-23 pinout sot-23 Marking KN bk sot 23 marking 16 SOT-143 MOTOROLA Cross Reference sot23 MMBT8599 motorola transistor dpak marking PDF