Untitled
Abstract: No abstract text available
Text: SMBD7000/ MMBD7000 Silicon Switching Diode Array 3 For high-speed switching applications Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking SMBD7000/ MMBD7000 s5C 1 = A1 Pin Configuration 2 = C2 3=C1/A2 Package SOT23 Maximum Ratings Parameter
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SMBD7000/
MMBD7000
VPS05161
EHA07005
MMBD7000
EHB00137
EHB00138
Feb-18-2002
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Untitled
Abstract: No abstract text available
Text: SMBD914 Silicon Switching Diode 3 For high-speed switching applications 2 1 1 VPS05161 3 EHA07002 Type Marking SMBD914 s5D Pin Configuration 1=A 2 n.c. Package 3=C SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage VRM
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SMBD914
VPS05161
EHA07002
Jul-27-2001
EHB00112
EHB00113
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Untitled
Abstract: No abstract text available
Text: SMBD914/ MMBD914 Silicon Switching Diode 3 For high-speed switching applications 2 1 1 VPS05161 3 EHA07002 Type Marking SMBD914/ MMBD914 s5D Pin Configuration 1=A 2 n.c. Package 3=C SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage
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SMBD914/
MMBD914
VPS05161
EHA07002
EHB00112
EHB00113
Feb-18-2002
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Untitled
Abstract: No abstract text available
Text: SMBD7000 Silicon Switching Diode Array 3 For high-speed switching applications Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking SMBD7000 s5C Pin Configuration 1 = A1 2 = C2 Package 3=C1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage
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SMBD7000
EHA07005
VPS05161
Jul-31-2001
EHB00137
EHB00138
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ZHCS506
Abstract: 3-SOT23 1d1t DSA003729 S-561C
Text: SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT” ISSUE 1 - September 1997 ZHCS506 ✪ FEATURES: • Low V F • High Current Capability APPLICATIONS: • DC - DC converters • Mobile telecomms • PCMCIA PARTMARK DETAIL: S56 1 C 2 1 A 3 3
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ZHCS506
500mA
t10ms
ZHCS506
3-SOT23
1d1t
DSA003729
S-561C
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Untitled
Abstract: No abstract text available
Text: SMBD914/MMBD914. Silicon Switching Diode • For high-speed switching applications SMBD914/MMBD914 3 1 2 Type SMBD914/MMBD914 Package SOT23 Configuration single Marking s5D Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value
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SMBD914/MMBD914.
SMBD914/MMBD914
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Untitled
Abstract: No abstract text available
Text: SMBD914/MMBD914. Silicon Switching Diode • For high-speed switching applications SMBD914/MMBD914 3 1 2 Type SMBD914/MMBD914 Package SOT23 Configuration single Marking s5D Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value
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SMBD914/MMBD914.
SMBD914/MMBD914
EHB00137
Mar-10-2004
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Untitled
Abstract: No abstract text available
Text: SMBD914/MMBD914. Silicon Switching Diode • For high-speed switching applications SMBD914/MMBD914 3 1 2 Type SMBD914/MMBD914 Package SOT23 Configuration single Marking s5D Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value
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SMBD914/MMBD914.
SMBD914/MMBD914
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MMBD914
Abstract: SMBD914
Text: SMBD914/MMBD914. Silicon Switching Diode For high-speed switching applications SMBD914/MMBD914 3 1 2 Type SMBD914/MMBD914 Package SOT23 Configuration single Marking s5D Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage
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SMBD914/MMBD914.
SMBD914/MMBD914
EHB00112
EHB00113
Feb-25-2003
MMBD914
SMBD914
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mmbd7000
Abstract: No abstract text available
Text: SMBD7000/MMBD7000. Silicon Switching Diode Array For high-speed switching applications SMBD7000/MMBD7000 3 D 1 D 2 1 2 Type SMBD7000/MMBD7000 Package SOT23 Configuration series Marking s5C Maximum Ratings at TA = 25°C, unless otherwise specified Parameter
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SMBD7000/MMBD7000.
SMBD7000/MMBD7000
EHB00137
EHB00138
Feb-21-2003
mmbd7000
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Untitled
Abstract: No abstract text available
Text: SMBD7000/MMBD7000. Silicon Switching Diode Array • For high-speed switching applications SMBD7000/MMBD7000 3 D 1 D 2 1 2 Type SMBD7000/MMBD7000 Package SOT23 Configuration series Marking s5C Maximum Ratings at TA = 25°C, unless otherwise specified Parameter
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SMBD7000/MMBD7000.
SMBD7000/MMBD7000
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s5C SOT23
Abstract: mar 820
Text: SMBD7000/MMBD7000. Silicon Switching Diode Array • For high-speed switching applications SMBD7000/MMBD7000 3 D 1 D 2 1 2 Type SMBD7000/MMBD7000 Package SOT23 Configuration series Marking s5C Maximum Ratings at TA = 25°C, unless otherwise specified Parameter
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SMBD7000/MMBD7000.
SMBD7000/MMBD7000
EHB00137
Mar-10-2004
s5C SOT23
mar 820
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Untitled
Abstract: No abstract text available
Text: SMBD7000/MMBD7000. Silicon Switching Diode Array • For high-speed switching applications SMBD7000/MMBD7000 3 D 1 D 2 1 2 Type SMBD7000/MMBD7000 Package SOT23 Configuration series Marking s5C Maximum Ratings at TA = 25°C, unless otherwise specified Parameter
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SMBD7000/MMBD7000.
SMBD7000/MMBD7000
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BFQ31R
Abstract: "UHF Transistors" BFQ31AR BFQ31 BFQ31A DSA003677
Text: SOT23 NPN SILICON PLANAR VHF/UHF TRANSISTORS BFQ31 BFQ31A ISSUE 3 JANUARY 1996 PARTMARKING DETAILS BFQ31 S2 BFQ31A S4 BFQ31AR S5 BFQ31R S3 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage
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BFQ31
BFQ31A
BFQ31AR
BFQ31R
100MHz
60MHz
BFQ31R
"UHF Transistors"
BFQ31AR
BFQ31
BFQ31A
DSA003677
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BZX84 series nxp
Abstract: No abstract text available
Text: SO T2 3 BZX84 series Voltage regulator diodes Rev. 5 — 18 September 2013 Product data sheet 1. Product profile 1.1 General description Low-power voltage regulator diodes in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 1 % (BZX84-A), 2 % (BZX84-B) and
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BZX84
O-236AB)
BZX84-A)
BZX84-B)
BZX84-C)
BZX84 series nxp
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BZX84-12
Abstract: BZX84 9V1 BZX84A2V4 SMD z6 SMD CODE MARKING s7 SOT23 53 diode 86Z0 BZX84C5V6 NXP smd diode marking v2 bzx84-b33 nxp
Text: SO T2 3 BZX84 series Voltage regulator diodes Rev. 4 — 22 March 2013 Product data sheet 1. Product profile 1.1 General description Low-power voltage regulator diodes in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 1 % (BZX84-A), 2 % (BZX84-B) and
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BZX84
O-236AB)
BZX84-A)
BZX84-B)
BZX84-C)
AEC-Q101
BZX84-12
BZX84 9V1
BZX84A2V4
SMD z6
SMD CODE MARKING s7 SOT23
53 diode
86Z0
BZX84C5V6 NXP
smd diode marking v2
bzx84-b33 nxp
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2305 P-Channel 8-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S5
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OT-23
CJ2305
OT-23
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BFQ31
Abstract: MI350 BFQ31AR "UHF Transistors" bfq31r BFQ31A
Text: SOT23 NPN SILICON PLANAR VHF/UHF TRANSISTORS ISSU E 3 - JANUARY 1996 P A R T M A R K IN G D E T A IL S BFQ31 B F Q 3 1A - S2 - S4 B FQ 31A R - S5 BFQ 31R - S3 ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L Collector-Base Voltage Collector-Emitter Voltage
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BFQ31
BFQ31A
BFQ31AR
BFQ31R
BFQ31
BFQ31A
10ftA,
100MHz
60MHz
MI350
"UHF Transistors"
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marking BAV99
Abstract: bav99 a7 BAV99 MARKING A7
Text: M f| b 3 b 7 5 S5 0030245 6367255 J ” MOTOROLA SC 34C <DIODES/OPTO> 38245 D T - O U - II SOT23 continued DEVICE NO. BAV99 SMALL-SIGNAL DUAL SERIES SWITCHING DIODE TOP n AK • Dual diode designed for high-speed switching. □ nr K A Device MAXIMUM RATINGS
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b3b75S5
BAV99
BAV99
marking BAV99
bav99 a7
MARKING A7
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BFQ31
Abstract: "UHF Transistors" RB SOT23
Text: SOT23 NPN SILICON PLANAR VHF/UHF TRANSISTORS BFQ31 BFQ31A ISSUE 3 - JANUARY 1996 PARTM AR KIN G DETAILS BFQ31 - S2 BFQ31A - S4 BFQ31AR - S5 BFQ31R - S3 PARAMETER SYM BO L C o lle cto r-B a se V o lta g e V CBO 30 V < O m O ABSOLUTE MAXIMUM RATINGS. 15 V V ebo
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BFQ31
BFQ31A
BFQ31AR
BFQ31R
BFQ31A
300jis.
"UHF Transistors"
RB SOT23
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BF96I
Abstract: T0-50 s525 BF964S BF96
Text: Tem ic S e m i c o n d u c t o r s TOSO 3 # TOSO (4) # SOT23 SOT143 SOT343 RF Transistors Part Number Marking Electrica) Characteristics V DS fomax V mA mW °C Y ft at Id s Gps and F mS dB mA at f Cjsçgi and CDst at f dB MHz pF pF MH? Id s s a* V u s mA
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OT143
OT343
BF994S
BF995
BF996S
BF998
S888T
BF543
S525T
BF96I
T0-50
s525
BF964S
BF96
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S852T
Abstract: BF579 T0-50 BF964S BF96 BFP183T
Text: Tem ic Semiconduct ors Selector Guide Dual-Gate Si-MOSFETs N-Channel Depletion Mode Number BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T VD5 V 20 20 20 12 20 20 20 12 20 10 lümax mA 30 30 30 30 30 30 30 30 30 20 Iy2isl at Ids mA mS 15
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BF961
BF964S
BF966S
BF988
BF994S
BF995
BF996S
BF998
S525T
S888T
S852T
BF579
T0-50
BF96
BFP183T
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s0t23
Abstract: LNA SOT23-6 AX2232 MAX2611 SOT23-6 AM oscillator 6pin 63 sot23 6pin AB SOT23-10
Text: Build Your Radio with Maxim’s Wide • Add Flexibility to Your New or Existing Design • Save Board Space over Discrete Designs but Maintain Design Flexibility • Achieve Faster Time-to-Market wideband DOW N' G A IN ' <S55&cc DUAL IF V C O BUFFER Low-Noise Amplifiers
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MAX2640
MAX2641
AX2651+
X2652Ì
900MHz)
1900MHz)
MAX2620
MAX2450
MAX2451
MAX2452
s0t23
LNA SOT23-6
AX2232
MAX2611
SOT23-6 AM
oscillator 6pin
63 sot23 6pin
AB SOT23-10
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F QFN 3X3
Abstract: QFN-36 qfn-24 4x4 QFN36 3x2 DFN DFN-8 qfn 3x3 dc-dc QFN-24 SMR101 SSOP-16
Text: m & të - ê T S û s m m s 'iÈ ïTffiPi }SiÆ a5# s5ag • SMS11f t a E a W i# a $ l|/ÎS f i« S SMS11 n ^ g |E B E 3 & .W & EE P R O M figtÈ tl? « iw Ä tÜ S E E P R O M U g ti* ? EN$it±il P IË ÎtJ P IÜ ® J 13 200 1500 CSP-8 SSOP-16 1.4x2.5 6x5
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SMS11
SMS11
SSOP-16
QFN-24
QFN-36
SMR101F
SMR101
F QFN 3X3
QFN-36
qfn-24 4x4
QFN36
3x2 DFN
DFN-8
qfn 3x3 dc-dc
QFN-24
SSOP-16
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