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    SP00021 Search Results

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    SP00021 Price and Stock

    Infineon Technologies AG ISP752T

    Power Switch ICs - Power Distribution Smart High Side 200mOhm 6-52V 1 3A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics ISP752T 32,287
    • 1 $1.61
    • 10 $1.45
    • 100 $1.16
    • 1000 $0.793
    • 10000 $0.677
    		Buy Now

    Infineon Technologies AG ISP752TFUMA1

    Power Switch ICs - Power Distribution Smart High Side 200mOhm 6-52V 1 3A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics ISP752TFUMA1 17,017
    • 1 $1.48
    • 10 $1.02
    • 100 $0.955
    • 1000 $0.803
    • 10000 $0.727
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    Infineon Technologies AG SPA11N80C3

    MOSFETs N-Ch 800V 11A TO220FP-3 CoolMOS C3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SPA11N80C3 1,125
    • 1 $2.86
    • 10 $2.41
    • 100 $1.94
    • 1000 $1.48
    • 10000 $1.34
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    Infineon Technologies AG SPA11N80C3XKSA1

    MOSFETs N-Ch 800V 11A TO220FP-3 CoolMOS C3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SPA11N80C3XKSA1 200
    • 1 $3.16
    • 10 $2.98
    • 100 $1.62
    • 1000 $1.34
    • 10000 $1.34
    		Buy Now

    Infineon Technologies AG SP000211730

    Power Switch ICs - Power Distribution Smart High Side 200mOhm 6-52V 1 3A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SP000211730
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.684
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    Find more SP00021 price and stock on Findchips.com

    SP00021 Datasheets (27)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SP000211730 Infineon Technologies Smart Power High-Side-Switch for Industrial Applications Original PDF
    SP000216317 Infineon Technologies CoolMOS Power Transistor Original PDF
    SP000216361 Infineon Technologies CoolMOS Power Transistor Original PDF
    SP0002-18151 Infineon Technologies OptiMOS - T Power-Transistor Original PDF
    SP0002-18153 Infineon Technologies OptiMOS - T Power-Transistor Original PDF
    SP0002-18154 Infineon Technologies OptiMOS Power-Transistor Original PDF
    SP0002-19044 Infineon Technologies OptiMOS Power-Transistor Original PDF
    SP0002-19048 Infineon Technologies OptiMOS Power-Transistor Original PDF
    SP0002-19050 Infineon Technologies OptiMOS Power-Transistor Original PDF
    SP0002-19051 Infineon Technologies OptiMOS Power-Transistor Original PDF
    SP0002-19052 Infineon Technologies OptiMOS Power-Transistor Original PDF
    SP0002-19053 Infineon Technologies OptiMOS Power-Transistor Original PDF
    SP0002-19056 Infineon Technologies OptiMOS Power-Transistor Original PDF
    SP0002-19061 Infineon Technologies OptiMOS Power-Transistor Original PDF
    SP0002-19062 Infineon Technologies OptiMOS Power-Transistor Original PDF
    SP0002-19063 Infineon Technologies OptiMOS Power-Transistor Original PDF
    SP0002-19065 Infineon Technologies OptiMOS Power-Transistor Original PDF
    SP000219527 Infineon Technologies Smart Power High-Side-Switch or Industrial Applications Original PDF
    SP000219532 Infineon Technologies Smart Four Channel Highside Power Switch for Industrial Applications Original PDF
    SP000219533 Infineon Technologies Smart Two Channel Highside Power Switch for Industrial Applications Original PDF

    SP00021 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n0404

    Abstract: No abstract text available
    Text: IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.4 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 IPP80N04S2-04 PG-TO263-3-2 2n0404

    12N50C3

    Abstract: SPA12N50C3 PG-TO220-3-31 SPI12N50C3 SPP12N50C3 SP000216322 INFINEON marking
    Text: SPP12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262- PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP12N50C3 SPI12N50C3, SPA12N50C3 PG-TO220-3-31 PG-TO262- PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31: 12N50C3 SPA12N50C3 SPI12N50C3 SPP12N50C3 SP000216322 INFINEON marking

    PN04L03

    Abstract: smd diode code gs Application Note ANPS071E ANPS071E marking CODE R SMD DIODE smd diode marking 77 SMD MARKING CODE SMD MARKING CODE 102 smd TR marking code G11 TRANSISTOR SMD MARKING CODE 42
    Text: IPB100N04S2L-03 IPP100N04S2L-03 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.0 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB100N04S2L-03 IPP100N04S2L-03 PG-TO263-3-2 PG-TO220-3-1 SP0002-19065 PN04L03 PN04L03 smd diode code gs Application Note ANPS071E ANPS071E marking CODE R SMD DIODE smd diode marking 77 SMD MARKING CODE SMD MARKING CODE 102 smd TR marking code G11 TRANSISTOR SMD MARKING CODE 42

    4141N

    Abstract: SP000219536 ITS4141N GPS05560 scr short circuit
    Text: ITS 4141N Smart High-Side Power Switch for Industrial Applications 1 Channel: 1 x 200mΩ Features Product Summary • Short circuit protection Overvoltage protection Vbb AZ 47 V • Current limitation Operating voltage Vbb(on) 12.45 V • Overload protection


    Original     		PDF 4141N PG-SOT223 4141N SP000219536 ITS4141N GPS05560 scr short circuit

    2N04L03

    Abstract: IPP80N04S2L-03 OPTIMOS SP0002-20158 DD-32 TRANSISTOR SMD MARKING CODE 42 ANPS071E IPB80N04S2L-03 PG-TO263-3-2 SP0002-19063
    Text: IPB80N04S2L-03 IPP80N04S2L-03 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.1 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB80N04S2L-03 IPP80N04S2L-03 PG-TO263-3-2 PG-TO220-3-1 SP0002-20158 2N04L03 2N04L03 IPP80N04S2L-03 OPTIMOS SP0002-20158 DD-32 TRANSISTOR SMD MARKING CODE 42 ANPS071E IPB80N04S2L-03 PG-TO263-3-2 SP0002-19063

    2n0607

    Abstract: 2n0607 equivalent IPI80N06S2-07 SP0002-18818 d68 smd code 2N06 IPP80N06S2-07 SP000218810 SP0002-18810 18818
    Text: IPB80N06S2-07 IPP80N06S2-07, IPI80N06S2-07 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 6.3 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB80N06S2-07 IPP80N06S2-07, IPI80N06S2-07 PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 SP0002-18818 2N0607 2n0607 2n0607 equivalent IPI80N06S2-07 SP0002-18818 d68 smd code 2N06 IPP80N06S2-07 SP000218810 SP0002-18810 18818

    N60C3

    Abstract: SPP03N60C3
    Text: 6331& 63$1& &RRO026Œ 3RZHU7UDQVLVWRU HDWXUH VDS#Tjmax  9 5'6 RQ  Ω ,'  $ • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •8OWUDORZJDWHFKDUJH • 3HULRGLFDYDODQFKHUDWHG 3G72FP 3G72 • [WUHPHGYGWUDWHG • +LJKSHDNFXUUHQWFDSDELOLW\


    Original     		PDF P-TO220-3-31 SP000216296 N60C3 SPP03N60C3 SPA03N60C3 PG-TO220-3-1, PG-TO220-3-21 PG-TO220-3-31/3-111 N60C3 SPP03N60C3

    D8172

    Abstract: 20N60CFD D207 d207 infineon transistor D207 JESD22 PG-TO220-3 SP000216361 SPA20N60CFD PG-TO220-FP
    Text: SPA20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.22 Ω I D1) 20.7 A • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		PDF SPA20N60CFD PG-TO220FP SP000216361 20N60CFD D8172 20N60CFD D207 d207 infineon transistor D207 JESD22 PG-TO220-3 SP000216361 SPA20N60CFD PG-TO220-FP

    11n80c3

    Abstract: SPA11N80C3
    Text: SPP11N80C3 SPA11N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP11N80C3 SPA11N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4438 11N80C3 11n80c3 SPA11N80C3

    TRANSISTOR 15n60c3

    Abstract: No abstract text available
    Text: SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.28 Ω ID 15 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP15N60C3, SPI15N60C3 SPA15N60C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31 SPP15N60C3 TRANSISTOR 15n60c3

    Untitled

    Abstract: No abstract text available
    Text: 6331& 63$1& &RRO026Œ 3RZHU7UDQVLVWRU VDS#Tjmax  9 5'6 RQ  Ω ,'  $ HDWXUH • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •8OWUDORZJDWHFKDUJH 3G721 • 3HULRGLFDYDODQFKHUDWHG 3G72 • [WUHPHGYGWUDWHG • 8OWUDORZHIIHFWLYHFDSDFLWDQFHV


    Original     		PDF P-TO220-3-31 SP000216298 SPP04N50C3 SPA04N50C3 PG-TO220-3-1, PG-TO220-3-21 PG-TO220-3-31

    3G72-31

    Abstract: No abstract text available
    Text: 6331& 63$1& &RRO026Œ 3RZHU7UDQVLVWRU HDWXUH VDS#Tjmax  9 5'6 RQ  Ω ,'  $ • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •8OWUDORZJDWHFKDUJH • 3HULRGLFDYDODQFKHUDWHG 3G72-31 3G72 • [WUHPHGYGWUDWHG • +LJKSHDNFXUUHQWFDSDELOLW\


    Original     		PDF RRO026 P-TO220-3-31 3G72-31 3G72-31 SP000216296

    20N65C3

    Abstract: 20n65 SPP20N65C3 20N65C
    Text: SPP20N65C3, SPA20N65C3 SPI20N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology V DS RDS on 650 V 0.19 Ω ID 20.7 A • Worldwide best R DS(on) in TO 220 • Ultra low gate charge PG-TO262-3 PG-TO220-3-31 PG-TO220-3-1


    Original     		PDF SPP20N65C3, SPA20N65C3 SPI20N65C3 P-TO220-3-31 PG-TO262-3 PG-TO220-3-31 PG-TO220-3-1 SPP20N65C3 SPI20N65C3 20N65C3 20n65 20N65C

    transistor df 331

    Abstract: d39 marking
    Text: SPA06N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated V DS @ T j,max 650 V R DS on ,max 0.75 Ω I D1) 6.2 A • High peak current capability • Ultra low effective capacitances


    Original     		PDF SPA06N60C3 PG-TO220-3-31 SP000216301 06N60C3 transistor df 331 d39 marking

    Untitled

    Abstract: No abstract text available
    Text: 6331& 63$1& &RRO026Œ 3RZHU7UDQVLVWRU HDWXUH VDS#Tjmax  9 5'6 RQ  Ω ,'  $ • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •8OWUDORZJDWHFKDUJH • 3HULRGLFDYDODQFKHUDWHG 3G72FP 3G72 • [WUHPHGYGWUDWHG • +LJKSHDNFXUUHQWFDSDELOLW\


    Original     		PDF RRO026 P-TO220-3-31 3G72FP SP000216296

    21n50c3

    Abstract: PG-TO220FP spp21n50c3
    Text: SPP21N50C3 SPI21N50C3, SPA21N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.19 Ω ID 21 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge P G-TO262 PG-TO220FP PG-TO220 • Periodic avalanche rated


    Original     		PDF SPP21N50C3 SPI21N50C3, SPA21N50C3 PG-TO220FP G-TO262 PG-TO220 SPI21N50C3 SPA21N50C3 PG-TO220 21n50c3

    sp*20n60c3

    Abstract: spp20n60 spp20n60c3
    Text: 6331& 63,1&63$1& &RRO026Œ 3RZHU7UDQVLVWRU VDS#Tjmax  9 5'6 RQ  Ω ,'  $ HDWXUH • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •:RUOGZLGHEHVW5 '6 RQ LQ72 •8OWUDORZJDWHFKDUJH 3G721 3G723 3G-TO220


    Original     		PDF G-TO220 P-TO220-3-31 PG-TO262-3 SP000216354 SPP20N60C3 SPI20N60C3, SPA20N60C3 PG-TO220-3-1, PG-TO220-3-21 sp*20n60c3 spp20n60 spp20n60c3

    2n0607

    Abstract: 2n0607 equivalent IPB80N06S2-07 IPI80N06S2-07 IPP80N06S2-07 PG-TO263-3-2 SP000218810 d68 smd code
    Text: IPB80N06S2-07 IPP80N06S2-07, IPI80N06S2-07 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 6.3 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB80N06S2-07 IPP80N06S2-07, IPI80N06S2-07 PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 SP0002-18818 2N0607 2n0607 2n0607 equivalent IPB80N06S2-07 IPI80N06S2-07 IPP80N06S2-07 PG-TO263-3-2 SP000218810 d68 smd code

    2N06L11

    Abstract: TRANSISTOR SMD MARKING CODE 26 IPB80N06S2L-11 IPI80N06S2L-11 IPP80N06S2L-11 PG-TO263-3-2 smd diode 104
    Text: IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11 OptiMOS Power-Transistor Product Summary Features V DS 55 V • N-channel Logic Level - Enhancement mode R DS on ,max (SMD version) 10.7 mW • Automotive AEC Q101 qualified ID 80 A • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11 PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 SP0002-18177 2N06L11 2N06L11 TRANSISTOR SMD MARKING CODE 26 IPB80N06S2L-11 IPI80N06S2L-11 IPP80N06S2L-11 PG-TO263-3-2 smd diode 104

    2n0605

    Abstract: IPP80N06S2-05 ANPS071E IPB80N06S2-05 PG-TO263-3-2 DD44
    Text: IPB80N06S2-05 IPP80N06S2-05 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 4.8 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB80N06S2-05 IPP80N06S2-05 PG-TO263-3-2 PG-TO220-3-1 SP0002-18877 2N0605 2n0605 IPP80N06S2-05 ANPS071E IPB80N06S2-05 PG-TO263-3-2 DD44

    20n65c3

    Abstract: S4560 20N65 SPA20N65C3 SPI20N65C3 SPP20N65C3
    Text: SPP20N65C3, SPA20N65C3 SPI20N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology V DS RDS on 650 V 0.19 Ω ID 20.7 A • Worldwide best R DS(on) in TO 220 • Ultra low gate charge PG-TO262 PG-TO220FP PG-TO220 • Periodic avalanche rated


    Original     		PDF SPP20N65C3, SPA20N65C3 SPI20N65C3 PG-TO262 PG-TO220FP PG-TO220 P-TO220-3-31 SPP20N65C3 Q67040-S4556 20n65c3 S4560 20N65 SPA20N65C3 SPI20N65C3 SPP20N65C3

    11n60cfd

    Abstract: JESD22 PG-TO220-3-31 SP000216317 SPA11N60CFD D8172
    Text: SPA11N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.44 Ω 11 A I D1) • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		PDF SPA11N60CFD PG-TO220-3-31 O-220-3-31 SP000216317 11N60CFD 11n60cfd JESD22 PG-TO220-3-31 SP000216317 SPA11N60CFD D8172

    Untitled

    Abstract: No abstract text available
    Text: SPP20N65C3, SPA20N65C3 SPI20N65C3 Cool MOS Power Transistor Feature V DS RDS on 650 V 0.19 Ω ID 20.7 A • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 220 PG-TO262 • Ultra low gate charge PG-TO220FP PG-TO220 • Periodic avalanche rated


    Original     		PDF SPP20N65C3, SPA20N65C3 SPI20N65C3 PG-TO262 PG-TO220FP PG-TO220 P-TO220-3-31 SPP20N65C3 Q67040-S4556

    DF 331 TRANSISTOR

    Abstract: d207
    Text: SPA20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.22 " I D1) 20.7 A • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		PDF SPA20N60CFD PG-TO220-3-31 SP000216361 20N60CFD DF 331 TRANSISTOR d207