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    SPD07N60 Search Results

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    SPD07N60 Price and Stock

    Rochester Electronics LLC SPD07N60C3BTMA1

    LOW POWER_LEGACY
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    DigiKey SPD07N60C3BTMA1 Bulk 27,200 148
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    Infineon Technologies AG SPD07N60C3ATMA1

    LOW POWER_LEGACY
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    DigiKey SPD07N60C3ATMA1 Cut Tape 4,363 1
    • 1 $2.62
    • 10 $1.794
    • 100 $2.62
    • 1000 $1.02925
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    SPD07N60C3ATMA1 Digi-Reel 4,363 1
    • 1 $2.62
    • 10 $1.794
    • 100 $2.62
    • 1000 $1.02925
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    SPD07N60C3ATMA1 Reel 2,500 2,500
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    Avnet Americas SPD07N60C3ATMA1 Reel 22,500 15 Weeks 2,500
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    Mouser Electronics SPD07N60C3ATMA1 929
    • 1 $2.29
    • 10 $1.67
    • 100 $1.26
    • 1000 $1.03
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    Verical SPD07N60C3ATMA1 119 10
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    • 100 $0.7858
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    Arrow Electronics SPD07N60C3ATMA1 Cut Strips 119 15 Weeks 1
    • 1 $1.1521
    • 10 $1.0281
    • 100 $0.7858
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    Newark SPD07N60C3ATMA1 Cut Tape 862 1
    • 1 $2.56
    • 10 $1.93
    • 100 $1.51
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    EBV Elektronik SPD07N60C3ATMA1 16 Weeks 2,500
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    Rochester Electronics LLC SPD07N60S5BTMA1

    N-CHANNEL POWER MOSFET
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    DigiKey SPD07N60S5BTMA1 Bulk 1,019 433
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    Infineon Technologies AG SPD07N60C3

    MOSFET N-CH 600V 7.3A TO252-3
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    ComSIT USA SPD07N60C3 2,245
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    Infineon Technologies AG SPD07N60S5

    MOSFET N-CH 600V 7.3A TO252-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPD07N60S5 Reel 2,500
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    • 10000 $0.75225
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    Quest Components SPD07N60S5 1,181
    • 1 $1.89
    • 10 $1.89
    • 100 $0.567
    • 1000 $0.4914
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    ComSIT USA SPD07N60S5 37
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    Find more SPD07N60 price and stock on Findchips.com

    SPD07N60 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPD07N60C2 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPD07N60C2 Infineon Technologies CoolMOS Power MOSFET, 600V, DPAK, RDSon=0.60 ?, 7.3A Original PDF
    SPD07N60C3 Infineon Technologies CoolMOS Power MOSFET, 600V, DPAK, RDSon=0.60 ?, 7.3A Original PDF
    SPD07N60C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPD07N60C3ATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - LOW POWER_LEGACY Original PDF
    SPD07N60C3BTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 7.3A DPAK Original PDF
    SPD07N60C3T Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 650V 7.3A DPAK Original PDF
    SPD07N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPD07N60S5 Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO252-3; VDS (max): 600.0 V; Package: DPAK (TO-252); RDS(ON) @ TJ=25°C VGS=10: 600.0 mOhm; ID(max) @ TC=25°C: 7.3 A; IDpuls (max): 14.6 A; Original PDF
    SPD07N60S5 Infineon Technologies CoolMOS Power MOSFET, 600V, DPAK, RDSon=0.60 ?, 7.3A Original PDF
    SPD07N60S5 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SPD07N60S5T Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 7.3A DPAK Original PDF

    SPD07N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    07N60S5

    Abstract: P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5
    Text: SPU07N60S5 SPD07N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Worldwide best RDS on in TO-251 and TO-252 · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity


    Original     		PDF SPU07N60S5 SPD07N60S5 O-251 O-252 SPUx3N60S5/SPDx3N60S5 SPU07N60S5 P-TO251-3-1 07N60S5 Q67040-S4196 07N60S5 P-TO251-3-1 P-TO252 SPD07N60S5

    07n60c2

    Abstract: TRANSISTOR SMD MARKING CODE 12w smd transistor marking 12W transistor SMD 12W smd transistor 12W 98 smd transistor code 12w 07N60C2 equivalent P-TO252 SDP06S60 SPD07N60C2
    Text: SPD07N60C2 SPU07N60C2 Preliminary data Cool MOS Power Transistor COOLMOS Power Semiconductors Feature • New revolutionary high voltage technology · Worldwide best RDS on in TO-251 and TO-252 · Product Summary VDS 600 V Ultra low gate charge R DS(on)


    Original     		PDF SPD07N60C2 SPU07N60C2 O-251 O-252 P-TO251 P-TO252 Q67040-S4312 07N60C2 07n60c2 TRANSISTOR SMD MARKING CODE 12w smd transistor marking 12W transistor SMD 12W smd transistor 12W 98 smd transistor code 12w 07N60C2 equivalent P-TO252 SDP06S60 SPD07N60C2

    Untitled

    Abstract: No abstract text available
    Text: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252. • Ultra low gate charge • Periodic avalanche rated PG-TO251.


    Original     		PDF SPU07N60S5 SPD07N60S5 O-251 O-252 PG-TO252. PG-TO251. SPD07N60S5

    07N60S5

    Abstract: No abstract text available
    Text: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated PG-TO251


    Original     		PDF SPU07N60S5 SPD07N60S5 O-251 O-252 PG-TO252 PG-TO251 SPD07N60S5 PG-TO251 07N60S5

    07n60s5

    Abstract: P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5 transistor 07n60s5
    Text: SPU07N60S5 SPD07N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A P-TO252 • Ultra low gate charge P-TO251-3-1 • Periodic avalanche rated


    Original     		PDF SPU07N60S5 SPD07N60S5 O-251 O-252 P-TO252 P-TO251-3-1 Q67040-S4196 07N60S5 07n60s5 P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5 transistor 07n60s5

    Q67040-S4423

    Abstract: 07N60 07N60C3 380v SPD07N60C3 SPD07N60 P-TO251-3-1 SDP06S60 SPU07N60C3
    Text: SPD07N60C3 SPU07N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-251 and TO-252 P-TO251-3-1 • Ultra low gate charge P-TO252-3-1


    Original     		PDF SPD07N60C3 SPU07N60C3 O-251 O-252 P-TO251-3-1 P-TO252-3-1 Q67040-S4423 07N60C3 Q67040-S4423 07N60 07N60C3 380v SPD07N60C3 SPD07N60 P-TO251-3-1 SDP06S60 SPU07N60C3

    07N60C3

    Abstract: Q67040-S4423 SPD07N60C3 P-TO251-3-1 SDP06S60 SPU07N60C3
    Text: SPD07N60C3 SPU07N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on)


    Original     		PDF SPD07N60C3 SPU07N60C3 P-TO251-3-1 P-TO252-3-1 Q67040-S4423 07N60C3 07N60C3 Q67040-S4423 SPD07N60C3 P-TO251-3-1 SDP06S60 SPU07N60C3

    Q67040-S4186

    Abstract: No abstract text available
    Text: SPU07N60S5 SPD07N60S5 Preliminary data Cool MOS Power-Transistor COOLMOS Power Semiconductors • New revolutionary high voltage technology · Worldwide best RDS on in TO-251 and TO-252 · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated


    Original     		PDF SPU07N60S5 SPD07N60S5 O-251 O-252 SPUx3N60S5/SPDx3N60S5 P-TO251-3-1 P-TO252 07N60S5 Q67040-S4186

    Untitled

    Abstract: No abstract text available
    Text: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A P-TO252. • Ultra low gate charge • Periodic avalanche rated P-TO251.


    Original     		PDF SPU07N60S5 SPD07N60S5 O-251 O-252 P-TO252. P-TO251. SPD07N60S5

    AR4100

    Abstract: Q67040-S4423
    Text: SPD07N60C3 SPU07N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 VDS @ Tjmax 650 V • Ultra low gate charge RDS(on) 0.6 Ω • Periodic avalanche rated


    Original     		PDF SPD07N60C3 SPU07N60C3 O-251 O-252 P-TO251-3-1 P-TO252-3-1 P-TO252-3-1 AR4100 Q67040-S4423

    Untitled

    Abstract: No abstract text available
    Text: SPD07N60C3 SPU07N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 VDS @ Tjmax 650 V • Ultra low gate charge RDS(on) 0.6 Ω • Periodic avalanche rated


    Original     		PDF SPD07N60C3 SPU07N60C3 O-251 O-252 P-TO251-3-1 P-TO252-3-1 P-TO252-3-1

    07n60c3

    Abstract: 07n60c AR4100
    Text: SPD07N60C3 SPU07N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 VDS @ Tjmax 650 V • Ultra low gate charge RDS(on) 0.6 Ω • Periodic avalanche rated


    Original     		PDF SPD07N60C3 SPU07N60C3 O-251 O-252 P-TO251-3-1 P-TO252-3-1 P-TO252-3-1 07n60c3 07n60c AR4100

    infineon 07n60s5

    Abstract: 07N60S5 P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5
    Text: SPU07N60S5 SPD07N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated


    Original     		PDF SPU07N60S5 SPD07N60S5 O-251 O-252 P-TO252 P-TO251-3-1 SPUx3N60S5/SPDx3N60S5 Q67040-S4196 infineon 07n60s5 07N60S5 P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5

    07N60S5

    Abstract: transistor smd code marking nc
    Text: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252. • Ultra low gate charge • Periodic avalanche rated PG-TO251.


    Original     		PDF SPU07N60S5 SPD07N60S5 O-251 O-252 PG-TO252. PG-TO251. SPD07N60S5 07N60S5 transistor smd code marking nc

    07n60s5

    Abstract: SPD07N60S5 SPU07N60S5 Q67040-S4186
    Text: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated PG-TO251


    Original     		PDF SPU07N60S5 SPD07N60S5 O-251 O-252 PG-TO252 PG-TO251 Q67040-S4196 07N60S5 07n60s5 SPD07N60S5 SPU07N60S5 Q67040-S4186

    07n60s5

    Abstract: TO-251 footprint TO252-3 rthjc SPD07N60S5 SPU07N60S5
    Text: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated PG-TO251


    Original     		PDF SPU07N60S5 SPD07N60S5 O-251 O-252 PG-TO252 PG-TO251 Q67040-S4196 07N60S5 07n60s5 TO-251 footprint TO252-3 rthjc SPD07N60S5 SPU07N60S5

    SPU07N60S5

    Abstract: Q67040-S4186 07n60s5 infineon 07n60s5
    Text: SPU07N60S5 SPD07N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS(on) 0.6


    Original     		PDF SPU07N60S5 SPD07N60S5 O-251 O-252 P-TO252 P-TO251-3-1 P-TO251-3-1 Q67040-S4186 07n60s5 infineon 07n60s5

    07N60C2

    Abstract: Q67040-S4311 A2206
    Text: SPD07N60C2 SPU07N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO-251 and TO-252 • Ultra low gate charge VDS 600 V RDS(on) 0.6 Ω • Periodic avalanche rated


    Original     		PDF SPD07N60C2 SPU07N60C2 O-251 O-252 P-TO251 P-TO252 P-TO252 07N60C2 Q67040-S4311 A2206

    07N60

    Abstract: 07N60S5
    Text: SPU07N60S5 SPD07N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 • Ultra low gate charge VDS 600 V RDS(on) 0.6 Ω ID 7.3 A P-TO252 P-TO251-3-1 • Periodic avalanche rated


    Original     		PDF SPU07N60S5 SPD07N60S5 P-TO252 O-251 O-252 P-TO251-3-1 P-TO251-3-1 07N60 07N60S5

    07N60C3

    Abstract: Q67040-S4423
    Text: SPD07N60C3 SPU07N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-251 and TO-252 P-TO251-3-1 • Ultra low gate charge P-TO252-3-1


    Original     		PDF SPD07N60C3 SPU07N60C3 P-TO251-3-1 O-251 O-252 P-TO252-3-1 P-TO252-3-1 07N60C3 Q67040-S4423

    Untitled

    Abstract: No abstract text available
    Text: SPD07N60C3 SPU07N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-251 and TO-252 • Ultra low gate charge P-TO251-3-1 P-TO252-3-1


    Original     		PDF SPD07N60C3 SPU07N60C3 P-TO251-3-1 O-251 O-252 P-TO252-3-1 P-TO252-3-1

    07N60C3

    Abstract: No abstract text available
    Text: SPD07N60C3 SPU07N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-251 and TO-252 P-TO251-3-1 • Ultra low gate charge P-TO252-3-1


    Original     		PDF SPD07N60C3 SPU07N60C3 P-TO251-3-1 O-251 O-252 P-TO252-3-1 P-TO252-3-1 07N60C3

    07n60c3

    Abstract: 07N60
    Text: SPD07N60C3 SPU07N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary •=Worldwide best RDS on in TO-251 and TO-252 VDS @ Tjmax 650 V • Ultra low gate charge


    Original     		PDF SPD07N60C3 SPU07N60C3 O-251 O-252 P-TO251-3-1 P-TO252-3-1 P-TO252-3-1 07n60c3 07N60

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SPU07N60S5 SPD07N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • W orldw ide best Ros on in TO-251 and TO -252 • Ultra low gate charge • Periodic avalanche proved • Extrem e d v/d t rated • O ptim ized capacitances


    OCR Scan     		PDF SPU07N60S5 SPD07N60S5 O-251 SPU07N60S5 P-T0251 07N60S5 Q67040-S4196 P-T0252