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    SPD07N60S5 Price and Stock

    Infineon Technologies AG SPD07N60S5

    MOSFET N-CH 600V 7.3A TO252-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPD07N60S5 Reel 2,500
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    • 10000 $0.75225
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    Quest Components SPD07N60S5 1,181
    • 1 $1.89
    • 10 $1.89
    • 100 $0.567
    • 1000 $0.4914
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    ComSIT USA SPD07N60S5 37
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    Infineon Technologies AG SPD07N60S5T

    MOSFET N-CH 600V 7.3A TO252-3
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    DigiKey SPD07N60S5T Cut Tape 1
    • 1 $2.59
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    SPD07N60S5T Reel 2,500
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    Rochester Electronics LLC SPD07N60S5BTMA1

    N-CHANNEL POWER MOSFET
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    DigiKey SPD07N60S5BTMA1 Bulk 433
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    • 1000 $0.69
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    Infineon Technologies AG SPD07N60S5BTMA1

    Trans MOSFET N-CH 600V 7.3A 3-Pin TO-252 T/R - Tape and Reel (Alt: SPD07N60S5BTMA1)
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    Avnet Americas SPD07N60S5BTMA1 Reel 4 Weeks 521
    • 1 $0.7
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    • 100 $0.658
    • 1000 $0.595
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    Rochester Electronics SPD07N60S5BTMA1 1,019 1
    • 1 $0.7
    • 10 $0.7
    • 100 $0.658
    • 1000 $0.595
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    EBV Elektronik SPD07N60S5BTMA1 21 Weeks 1
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    Infineon Technologies AG SPD07N60S5A

    COOL MOS POWER TRANSISTOR Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SPD07N60S5A 45,500
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    SPD07N60S5 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SPD07N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPD07N60S5 Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO252-3; VDS (max): 600.0 V; Package: DPAK (TO-252); RDS(ON) @ TJ=25°C VGS=10: 600.0 mOhm; ID(max) @ TC=25°C: 7.3 A; IDpuls (max): 14.6 A; Original PDF
    SPD07N60S5 Infineon Technologies CoolMOS Power MOSFET, 600V, DPAK, RDSon=0.60 ?, 7.3A Original PDF
    SPD07N60S5 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SPD07N60S5T Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 7.3A DPAK Original PDF

    SPD07N60S5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    07N60S5

    Abstract: P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5
    Text: SPU07N60S5 SPD07N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Worldwide best RDS on in TO-251 and TO-252 · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity


    Original     		PDF SPU07N60S5 SPD07N60S5 O-251 O-252 SPUx3N60S5/SPDx3N60S5 SPU07N60S5 P-TO251-3-1 07N60S5 Q67040-S4196 07N60S5 P-TO251-3-1 P-TO252 SPD07N60S5

    Untitled

    Abstract: No abstract text available
    Text: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252. • Ultra low gate charge • Periodic avalanche rated PG-TO251.


    Original     		PDF SPU07N60S5 SPD07N60S5 O-251 O-252 PG-TO252. PG-TO251. SPD07N60S5

    07N60S5

    Abstract: No abstract text available
    Text: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated PG-TO251


    Original     		PDF SPU07N60S5 SPD07N60S5 O-251 O-252 PG-TO252 PG-TO251 SPD07N60S5 PG-TO251 07N60S5

    07n60s5

    Abstract: P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5 transistor 07n60s5
    Text: SPU07N60S5 SPD07N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A P-TO252 • Ultra low gate charge P-TO251-3-1 • Periodic avalanche rated


    Original     		PDF SPU07N60S5 SPD07N60S5 O-251 O-252 P-TO252 P-TO251-3-1 Q67040-S4196 07N60S5 07n60s5 P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5 transistor 07n60s5

    Q67040-S4186

    Abstract: No abstract text available
    Text: SPU07N60S5 SPD07N60S5 Preliminary data Cool MOS Power-Transistor COOLMOS Power Semiconductors • New revolutionary high voltage technology · Worldwide best RDS on in TO-251 and TO-252 · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated


    Original     		PDF SPU07N60S5 SPD07N60S5 O-251 O-252 SPUx3N60S5/SPDx3N60S5 P-TO251-3-1 P-TO252 07N60S5 Q67040-S4186

    Untitled

    Abstract: No abstract text available
    Text: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A P-TO252. • Ultra low gate charge • Periodic avalanche rated P-TO251.


    Original     		PDF SPU07N60S5 SPD07N60S5 O-251 O-252 P-TO252. P-TO251. SPD07N60S5

    infineon 07n60s5

    Abstract: 07N60S5 P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5
    Text: SPU07N60S5 SPD07N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated


    Original     		PDF SPU07N60S5 SPD07N60S5 O-251 O-252 P-TO252 P-TO251-3-1 SPUx3N60S5/SPDx3N60S5 Q67040-S4196 infineon 07n60s5 07N60S5 P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5

    07N60S5

    Abstract: transistor smd code marking nc
    Text: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252. • Ultra low gate charge • Periodic avalanche rated PG-TO251.


    Original     		PDF SPU07N60S5 SPD07N60S5 O-251 O-252 PG-TO252. PG-TO251. SPD07N60S5 07N60S5 transistor smd code marking nc

    07n60s5

    Abstract: SPD07N60S5 SPU07N60S5 Q67040-S4186
    Text: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated PG-TO251


    Original     		PDF SPU07N60S5 SPD07N60S5 O-251 O-252 PG-TO252 PG-TO251 Q67040-S4196 07N60S5 07n60s5 SPD07N60S5 SPU07N60S5 Q67040-S4186

    07n60s5

    Abstract: TO-251 footprint TO252-3 rthjc SPD07N60S5 SPU07N60S5
    Text: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated PG-TO251


    Original     		PDF SPU07N60S5 SPD07N60S5 O-251 O-252 PG-TO252 PG-TO251 Q67040-S4196 07N60S5 07n60s5 TO-251 footprint TO252-3 rthjc SPD07N60S5 SPU07N60S5

    SPU07N60S5

    Abstract: Q67040-S4186 07n60s5 infineon 07n60s5
    Text: SPU07N60S5 SPD07N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS(on) 0.6


    Original     		PDF SPU07N60S5 SPD07N60S5 O-251 O-252 P-TO252 P-TO251-3-1 P-TO251-3-1 Q67040-S4186 07n60s5 infineon 07n60s5

    07N60

    Abstract: 07N60S5
    Text: SPU07N60S5 SPD07N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 • Ultra low gate charge VDS 600 V RDS(on) 0.6 Ω ID 7.3 A P-TO252 P-TO251-3-1 • Periodic avalanche rated


    Original     		PDF SPU07N60S5 SPD07N60S5 P-TO252 O-251 O-252 P-TO251-3-1 P-TO251-3-1 07N60 07N60S5

    AN-CoolMOS-01

    Abstract: AN-CoolMOS-04 SPW17N80C2 irfp450 mosfet full bridge transistor SMD v1 MOSFET siemens semiconductor 1988 led smps* ZVT 47n60s5 to247 SPN04N60C2 SPN01N60S5
    Text: Version 1.1 , June 2000 Application Note AN-CoolMOS-07 CoolMOS - Frequently Asked Questions Author: Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g CoolMOS - Frequently Asked Questions


    Original     		PDF AN-CoolMOS-07 Room14J1 Room1101 AN-CoolMOS-01 AN-CoolMOS-04 SPW17N80C2 irfp450 mosfet full bridge transistor SMD v1 MOSFET siemens semiconductor 1988 led smps* ZVT 47n60s5 to247 SPN04N60C2 SPN01N60S5

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    6 PIN SMD IC FOR SMPS

    Abstract: 500 Watt Phase Shifted ZVT Power Converter smps* ZVT infineon mtbf mtbf siemens 3800 CoolMOS Power Transistor circuit diagram of mosfet based smps power supply 500 WATT smps technical difference between 400 watt smps and 45 110 volt output smps design datasheet
    Text: Version 1.1 February 2001 Application Note AN-CoolMOS-03 HOW TO SELECT THE RIGHT COOLMOS AND ITS POWER HANDLING CAPABILITY Author: Luo Junyang, Jeoh Meng Kiat, Marco Puerschel and Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion


    Original     		PDF AN-CoolMOS-03 Room14J1 Room1101 6 PIN SMD IC FOR SMPS 500 Watt Phase Shifted ZVT Power Converter smps* ZVT infineon mtbf mtbf siemens 3800 CoolMOS Power Transistor circuit diagram of mosfet based smps power supply 500 WATT smps technical difference between 400 watt smps and 45 110 volt output smps design datasheet

    irfp460 dc welding circuit diagram

    Abstract: irfp450 mosfet full bridge ZVT Full bridge transformer IGBT IGBT ZVT Full bridge lossless passive clamp flyback converter ZVT full bridge for welding irfp450 mosfet full bridge pwm 47N60S5 AN-CoolMOS-02 siemens rectifier pwm igbt
    Text: Version 1.1 , June 2000 Application Note AN-CoolMOS-02 CoolMOS Selection Guide Author: Ilia Zverev, Jon Hancock Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g CoolMOS Selection Guide This selection guide shows the main application fields of CoolMOS transistors, answers


    Original     		PDF AN-CoolMOS-02 Room14J1 Room1101 irfp460 dc welding circuit diagram irfp450 mosfet full bridge ZVT Full bridge transformer IGBT IGBT ZVT Full bridge lossless passive clamp flyback converter ZVT full bridge for welding irfp450 mosfet full bridge pwm 47N60S5 AN-CoolMOS-02 siemens rectifier pwm igbt

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    UPS SIEMENS

    Abstract: SPW17N80C2 500 coolmos SPD01N60S5 SPN01N60S5 A1040 to-252 SPN04N60C2 Infineon CoolMOS SPU01N60S5 SPD02N60S5
    Text: C o o l M O S TM C 2 COOL & FAST C o o l M O S TM C 2 the second generation www.infineon.com Never stop thinking. C o o l M O S TM C 2 the second generation Infineon’s introduction of the 600V CoolMOSTM C2 technology is a breakthrough design for power conversion systems such as


    Original     		PDF B152-H7641-X-X-7600 UPS SIEMENS SPW17N80C2 500 coolmos SPD01N60S5 SPN01N60S5 A1040 to-252 SPN04N60C2 Infineon CoolMOS SPU01N60S5 SPD02N60S5

    BUP213

    Abstract: BSS123L6327 BSS123E6327 bup314d IPD06N03LAG BSP170PE6327T BSP315 SPD06N80C3XT BSP295-L6327 BSP129E6327
    Text: Mosfets TO-218AB TO-220AB and TO-220 1-G TO-220FP TO-247 1 G 2 D 3 S 1-G 1-G 2-C 2-D 3-E TO-262 NEW! 3-S D-PAK, D2-PAK and TO-252 D D 2 S 3-S 3 SO-8 Dual G2 S2 1 3-D D2 D2 D 5 3-S 2-D G2 1 D 2 D G1 G 1 D1 4 3 2 2 1 G 6 7 D 8 D D 8 7 D 6 D 2-D 4 D D C 3 2S


    Original     		PDF O-218AB O-220AB O-220 O-220FP O-247 O-262 O-252 O-263 OT-323 OT-363 BUP213 BSS123L6327 BSS123E6327 bup314d IPD06N03LAG BSP170PE6327T BSP315 SPD06N80C3XT BSP295-L6327 BSP129E6327

    BUZ78

    Abstract: SIPC69N60C3 P-Channel Depletion Mosfets sipc01n80c2 SPNA2N80C2 buz22 SIPC26N60C3 SIPC26N80C3 BTS443P BTS840S2
    Text: File name Products mini-PROFET BTS308 BTS409 BTS410-H2 BTS640S2 BTS443P BTS650P BTS6510 BSP762 TEMPFET / Speed TEMPFET HITFET BTS244-Z BSP78 Smart Motor Bridges + Driver ICs Bridges for Throttle Control TLE5209GP High Voltage MOSFETs CoolMOS Power MOSFETs 600V SPU01N60S5


    Original     		PDF BTS308 BTS409 BTS410-H2 BTS640S2 BTS443P BTS650P BTS6510 BSP762 BTS244-Z BSP78 BUZ78 SIPC69N60C3 P-Channel Depletion Mosfets sipc01n80c2 SPNA2N80C2 buz22 SIPC26N60C3 SIPC26N80C3 BTS443P BTS840S2

    SIPC69N60C3

    Abstract: sipc01n80c2 SPA11N60C3 equivalent SIPC26N80C3 SPW20N60S5 equivalent SIPC14N60C3 SIPC16N80C3 SPA03N60S5 SPP11N60S5 equivalent CoolMOS Power Transistor
    Text: Saber Libraries for CoolMOS Power Transistors Models provided by Infineon are not warranted by Infineon as fully representing all the specifications and operating characteristics of the semiconductor product to which the model relates. The models describe the characteristics of typical devices. In all cases, the


    Original     		PDF tPA20N60C3 SPB20N60C3 SPP20N60C3 SPW20N60C3 SIPC26N60C3 SPW47N60C3 SIPC69N60C3 OT223 SPNA02N80C2 SIPC01N80C2 SIPC69N60C3 sipc01n80c2 SPA11N60C3 equivalent SIPC26N80C3 SPW20N60S5 equivalent SIPC14N60C3 SIPC16N80C3 SPA03N60S5 SPP11N60S5 equivalent CoolMOS Power Transistor

    SIPC69N60C3

    Abstract: SPW20N60S5 equivalent sipc01n80c2 P-Channel Depletion Mosfets SKP15N60 BUZ78 equivalent SPNA2N80C2 BUP314 SIPC26N80C3 TDA16822
    Text: File name Products Silicon Carbide Diodes thinQ 300V / 600V SDP06S60 SDP04S60 SDB10S30 SiC_Pspice.zip Smart High Side Switches High-Current PROFET BTS555 BTS550P BTS650P PROFET_Pspice.exe Smart Low Side Switches TEMPFET / Speed TEMPFET HITFET BTS114A BSP78


    Original     		PDF SDP06S60 SDP04S60 SDB10S30 BTS555 BTS550P BTS650P BTS114A BSP78 BTS115A BTS134D SIPC69N60C3 SPW20N60S5 equivalent sipc01n80c2 P-Channel Depletion Mosfets SKP15N60 BUZ78 equivalent SPNA2N80C2 BUP314 SIPC26N80C3 TDA16822

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SPU07N60S5 SPD07N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • W orldw ide best Ros on in TO-251 and TO -252 • Ultra low gate charge • Periodic avalanche proved • Extrem e d v/d t rated • O ptim ized capacitances


    OCR Scan     		PDF SPU07N60S5 SPD07N60S5 O-251 SPU07N60S5 P-T0251 07N60S5 Q67040-S4196 P-T0252