137 742a
Abstract: 1n5802cbus tungsten slug glass diode 1N5806CBUS cbus mil-prf-19500/477 1N5806CB 1N5811CBUS mil-prf-19500/742 1n5804cb
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 28 November 2009. INCH-POUND MIL-PRF-19500/742A 28 August 2009 SUPERSEDING MIL-PRF-19500/742 1 June 2007 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER,
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MIL-PRF-19500/742A
MIL-PRF-19500/742
1N5802CB,
1N5804CB,
1N5806CB,
1N5807CB,
1N5809CB,
1N5811CB,
1N5802CBUS,
1N5804CBUS,
137 742a
1n5802cbus
tungsten slug glass diode
1N5806CBUS
cbus
mil-prf-19500/477
1N5806CB
1N5811CBUS
mil-prf-19500/742
1n5804cb
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SHARP IR3
Abstract: 1N4942 1N4944 1N4946 1N4947 1N4948 1N5615 1N5617 1N5619 1N5621
Text: The documentation and process conversion measures necessary to comply with this document shall be completed by 2 January 2011. INCH-POUND MIL-PRF-19500/359K 2 October 2010 SUPERSEDING MIL-PRF-19500/359J 18 February 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, POWER RECTIFIER,
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MIL-PRF-19500/359K
MIL-PRF-19500/359J
1N4942,
1N4944,
1N4946,
1N4947,
1N4948,
1N5615,
1N5617,
1N5619,
SHARP IR3
1N4942
1N4944
1N4946
1N4947
1N4948
1N5615
1N5617
1N5619
1N5621
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PDF
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Model 4065
Abstract: 1N5807 ir2175
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 22 September 2007. MIL-PRF-19500/477H 22 June 2007 SUPERSEDING MIL-PRF-19500/477G 22 March 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER,
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MIL-PRF-19500/477H
MIL-PRF-19500/477G
1N5802,
1N5804,
1N5806,
1N5807,
1N5809,
1N5811,
1N5802US,
1N5804US,
Model 4065
1N5807
ir2175
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PDF
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Untitled
Abstract: No abstract text available
Text: Agilent B1505A Power Device Analyzer/Curve Tracer Data Sheet Introduction The B1505A Power Device Analyzer/ Curve Tracer is a single-box solution with next-generation curve tracer functionality that can accurately evaluate and characterize power devices at up to 10 kV and 1500
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B1505A
B1505A
B1500A
B2900A
com/find/B1500A
com/find/B2900A
5990-3853EN
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477J
Abstract: mil-prf-19500/477 JANTX 1N5811 1N5804URS 1N5807 JANTXV 1N5811URS 1N5802 1N5802US 1N5804 1N5804US
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 28 April 2009. INCH-POUND MIL-PRF-19500/477J w/AMENDMENT 1 28 January 2009 SUPERSEDING MIL-PRF-19500/477H 14 November 2008 PERFORMANCE SPECIFICATION SHEET
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MIL-PRF-19500/477J
MIL-PRF-19500/477H
1N5802,
1N5804,
1N5806,
1N5807,
1N5809,
1N5811,
1N5802US,
1N5804US,
477J
mil-prf-19500/477
JANTX 1N5811
1N5804URS
1N5807 JANTXV
1N5811URS
1N5802
1N5802US
1N5804
1N5804US
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PDF
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LDMOS
Abstract: AN1226 AN1228
Text: AN1228 APPLICATION NOTE RELATE LDMOS DEVICE PARAMETERS TO RF PERFORMANCE John Pritiskutch - Brett Hanson 1. ABSTRACT This second installment of a two-part paper series on LDMOS technology see Understanding LDMOS Device Fundamentals, AN1226 will explain LDMOS circuit-level performance through MOS intrinsic
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AN1228
AN1226)
LDMOS
AN1226
AN1228
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PDF
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AN1228
Abstract: "RF MOSFETs" AN1226
Text: AN1228 APPLICATION NOTE RELATE LDMOS DEVICE PARAMETERS TO RF PERFORMANCE John Pritiskutch - Brett Hanson 1. ABSTRACT This second installment of a two-part paper series on LDMOS technology see Understanding LDMOS Device Fundamentals, AN1226 will explain LDMOS circuit-level performance through MOS intrinsic
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AN1228
AN1226)
AN1228
"RF MOSFETs"
AN1226
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PDF
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33178
Abstract: 1N5550 1N5550US 1N5551 1N5552 1N5553 1N5554 1N5554US 1N5554 JANTXV equivalent 1N5554 JANTXV
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 10 May 2010. MIL-PRF-19500/420L W/Amendment 1 10 February 2010 SUPERSEDING MIL-PRF-19500/420L 27 June 2008 PERFORMANCE SPECIFICATION SHEET
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MIL-PRF-19500/420L
1N5550
1N5554,
1N5550US
1N5554US,
MIL-PRF-19500.
33178
1N5551
1N5552
1N5553
1N5554
1N5554US
1N5554 JANTXV equivalent
1N5554 JANTXV
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PDF
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Untitled
Abstract: No abstract text available
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 6 December 2013. INCH-POUND MIL-PRF-19500/420M 6 September 2013 SUPERSEDING MIL-PRF-19500/420L 27 June 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER,
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MIL-PRF-19500/420M
MIL-PRF-19500/420L
1N5550
1N5554,
1N5550US
1N5554US,
MIL-PRF-19500.
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PDF
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BUT18
Abstract: No abstract text available
Text: Product specification Philips Semiconductors BUT18; BUT18A Silicon diffused power transistors DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a TO-22QAB package. APPLICATIONS • Converters • Inverters • Switching regulators
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OCR Scan
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O-22QAB
BUT18;
BUT18A
BUT18
BUT18A
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PDF
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PIN diode SPICE model
Abstract: IBIS Model diode AN012626-2 AN-1111 hyperlynx 620141 JC-16
Text: National Semiconductor Application Note 1111 Syed B. Huq June 1998 INTRODUCTION With time to market becoming shorter and shorter, system designers are struggling to release a product from concept to reality in a tightly budgeted time. The need to simulate before prototyping is very essential and the ability to simulate
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BUW84
Abstract: transistor BUW84
Text: Philips Semiconductors Product specification Silicon diffused power transistors BUW84; BUW85 PINNING DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT82 package. APPLICATIONS PIN DESCRIPTION 1 base 2 collector; connected to mounting base
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OCR Scan
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BUW84;
BUW85
BUW84
BUW85
transistor BUW84
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PDF
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Untitled
Abstract: No abstract text available
Text: ESSAIS ELECTRIQUES ET M ECANIQUES NORMALISES STANDARDIZED ELECTRICAL AND MECHANICAL TESTS MODES OPERATOIRES TEST PROCEDURE 8 Durbe de vie en rotation. Pour les potentiomdtres de technologie film plastique, la durbe de vie est spbcifibe en revolutions d'axe h la vitesse de 400 tr/mn ± 50 tr/mn,
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OCR Scan
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PDF
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BD139 fall time
Abstract: BUX84 bux85 Xpert BD139 bd139 philips BD139 time philips power transistor bd139 power transistor bd139 Philips Bd139
Text: Product specification Philips Semiconductors BUX84; BUX85 Silicon diffused power transistors High-voltage, high-speed, glass-passivated npn power transistors in T 0 2 2 0 envelopes, intended for use in converters, inverters, switching regulators, motor control systems and switching applications.
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OCR Scan
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BUX84;
BUX85
O-220
O-220AB.
BUX84
7110fl2b
BD139 fall time
bux85
Xpert
BD139
bd139 philips
BD139 time
philips power transistor bd139
power transistor bd139
Philips Bd139
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PDF
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BUW84
Abstract: BUW85 70-402 inSOT82 ScansUX40
Text: Philips Semiconductors Product specification Silicon diffused power transistors BUW84; BUW85 High-voltage, high-speed, glass-passivated npn power transistors in S O T 82 envelopes, intended fo r use in converters, inverters, switching regulators, motor control systems and switching applications.
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OCR Scan
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BUW84;
BUW85
inSOT82
BUW84
BUW85
S0T82.
711002b
a077fi2Q
70-402
ScansUX40
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PDF
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70123A
Abstract: TOP224 Application Note top227 TOP221 TOP223 TOP222 TOP224 TOP223 application specifications curve tracer top221-224p
Text: April 1997 TOP221-224P PRODUCT SPECIFICATION Document Number PS026 Customer Name PI Signatory Date Customer Signatory Date W.B. Smith, Dir. QA&R This specification is a controlled document and is distributed to customers. Each customer recipient must acknowledge and register receipt by returning the cover sheet with an authorized signature to the Power Integrations
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OP221-224P
PS026
OP221-224P
245CTERISTICS
PI-1940-0900396
OP227
OP226
OP225
OP224
OP223
70123A
TOP224 Application Note
top227
TOP221
TOP223
TOP222
TOP224
TOP223 application
specifications curve tracer
top221-224p
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PDF
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"RF MOSFETs"
Abstract: AN1226 AN1228
Text: AN1228 Application note How to relate LMOS device parameters to RF performance Introduction This second installment of a two-part paper series on LDMOS technology see Understanding LDMOS Device Fundamentals, AN1226 will explain LDMOS circuit-level performance through MOS intrinsic device characteristics. Understanding current laterally
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Original
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AN1228
AN1226)
"RF MOSFETs"
AN1226
AN1228
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PDF
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BUW11A
Abstract: d777b BUW11 transistor BU 102
Text: Product specification Philips Semiconductors BUW11; BUW11A Silicon diffused power transistors High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.
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OCR Scan
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BUW11;
BUW11A
BUW11
7110fl5b
GD777b8
BUW11A
d777b
transistor BU 102
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PDF
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TOP227
Abstract: TOP-220 TOP222 TOP221 TOP223 application note specification of curve tracer top223y top227y Top224 TOP222y TOP223
Text: April 1997 TOP221-227Y PRODUCT SPECIFICATION Document Number Customer Name PS027-001 SONY PI Signatory Date Customer Signatory Date W.B. Smith, Dir. QA&R This specification is a controlled document and is distributed to customers. Each customer recipient must
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Original
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OP221-227Y
PS027-001
PI-1940-0900396
OP227
OP226
OP225
OP224
OP223
OP222
TOP227
TOP-220
TOP222
TOP221
TOP223 application note
specification of curve tracer
top223y top227y
Top224
TOP222y
TOP223
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PDF
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BUT11A1
Abstract: BUT11A BUT11 0077B BUT-11 But11a data
Text: Philips Semiconductors Product specification Silicon diffused power transistors BUT11; BUT11A High-voltage, high-speed, glass-passivated npn power transistors in a T 0 -2 2 0 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.
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OCR Scan
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BUT11;
BUT11A
T0-220
BUT11
TQ-220AB.
711002b
0G77bÃ
BUT11A1
BUT11A
0077B
BUT-11
But11a data
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PDF
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BUT18
Abstract: BUT18A ScansUX40
Text: Philips Semiconductors Product specification Silicon diffused power transistors BUT18; BUT18A High-voltage, high-speed, glass-passivated npn power transistors in a T 0 -2 2 0 envelope, intended for use in converters, inverters, switching regulators, motor control systems, etc.
|
OCR Scan
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BUT18;
BUT18A
T0-220
BUT18
O-220AB.
7ZS4646
7Z21446
ScansUX40
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PDF
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41ba
Abstract: BUW13AF BUW13F UBC098 sot199
Text: Product specification Philips Semiconductors BUW13F; BUW13AF Silicon diffused power transistors High-voltage, high-speed, glass-passivated npn power transistor in a SOT199 envelope intended fo r use in converters, inverters, switching regulators, motor control systems, etc.
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OCR Scan
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BUW13F;
BUW13AF
OT199
BUW13F
711002b
71ilGÃ
41ba
BUW13AF
BUW13F
UBC098
sot199
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PDF
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ZB1702
Abstract: BUW11AF BUW11F ZB1-7 ScansUX40
Text: Philips Semiconductors Product specification Silicon diffused power transistors BUW11F; BUW11AF High-voltage, high-speed, glass-passivated npn power transistor in a SOT 199 envelope intended for use in converters, inverters, switching regulators, motor control systems, etc.
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OCR Scan
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BUW11F;
BUW11AF
BUW11F
711062b
QG77773
ZB1702
711Dfi2b
ZB1-7
ScansUX40
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PDF
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BUW11
Abstract: BUW11A buw11 transistor philips rf transistors buw111
Text: Philips Semiconductors Product specification Silicon diffused power transistors BUW11 ; BUW11A High-voltage, high-speed, glass-passivated npn power transistors in a S0T93 envelope, intended fo r use in converters, inverters, switching regulators, m otor control systems etc.
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OCR Scan
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BUW11;
BUW11A
S0T93
BUW11
711002b
0777b?
BUW11A
buw11 transistor
philips rf transistors
buw111
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PDF
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