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    SPU28N03L Search Results

    SPU28N03L Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPU28N03L Infineon Technologies SIPMOS Power Transistor Original PDF
    SPU28N03L Infineon Technologies Original PDF
    SPU28N03L Siemens Original PDF
    SPU28N03L Siemens Original PDF
    SPU28N03L Toshiba Power MOSFETs Cross Reference Guide Original PDF

    SPU28N03L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    s4142

    Abstract: transistor smd MJ 145 P-TO251-3-1 P-TO252 SPD28N03L SPU28N03L
    Text: SPD28N03L SPU28N03L Preliminary data SIPMOS  Power Transistor • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175°C operating temperature Type VDS ID SPD28N03L 30 V 28 A SPU28N03L RDS on @ VGS Pin 1 Pin 2 Pin 3


    Original     		PDF SPD28N03L SPU28N03L P-TO252 Q67040-S4139-A2 P-TO251-3-1 Q67040-S4142-A2 s4142 transistor smd MJ 145 P-TO252 SPD28N03L SPU28N03L

    Siemens DIODE E 1220

    Abstract: No abstract text available
    Text: SPD28N03L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Enhancement mode Drain-Source on-state resistance RDS on 0.018 Ω • Avalanche rated Continuous drain current ID 30 V 30 A • Logic Level • dv/dt rated


    Original     		PDF SPD28N03L P-TO252 Q67040-S4139-A2 SPU28N03L P-TO251-3-1 Q67040-S4142-A2 Siemens DIODE E 1220

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    28n03l

    Abstract: 28n03 P-TO251-3-1 P-TO252 SPD28N03L SPU28N03L Q67040-S4142-A2 a6024
    Text: SPD 28N03L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.018 Ω Continuous drain current ID Enhancement mode • Avalanche rated 30 V 30 A • Logic Level • dv/dt rated


    Original     		PDF 28N03L SPD28N03L P-TO252 Q67040-S4139-A2 SPU28N03L P-TO251-3-1 Q67040-S4142-A2 28n03l 28n03 P-TO252 SPD28N03L SPU28N03L a6024

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
    Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package


    Original     		PDF 615NV OT-223 20iemens B152-H6493-G5-X-7600 BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D

    Siemens DIODE E 1220

    Abstract: VPT09050
    Text: SPD28N03L SPU28N03L SIEMENS SIPMOS Power Transistor • N-Channel /X • Enhancement mode • Avalanche rated VPT09050 VPT09051 • Logic Level • dvld t rated • 175°C operating temperature Type ^DS b SPD28N03L 30 V 28 A SPU28N03L ffDS on (5) VGS


    OCR Scan     		PDF SPD28N03L SPU28N03L VPT09050 VPT09051 P-T0252 Q67040-S4139-A2 P-T0251 Q67040-S4142-A2 Siemens DIODE E 1220

    kd smd transistor

    Abstract: No abstract text available
    Text: » •— SPD 28N03L Infineon technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS Drain-Source on-state resistance f îDS on 0.018 Q 30 A • Enhancement mode Continuous drain current • Avalanche rated


    OCR Scan     		PDF 28N03L SPD28N03L Q67040-S4139-A2 P-T0252 P-T0251-3-1 Q67040-S4142-A2 SPU28N03L S35bG5 Q133777 SQT-89 kd smd transistor

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
    Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8


    OCR Scan     		PDF 615NV BSP318S BUZ MOSFET mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S