SPW17N80C3 INFINEON
Abstract: SPW17N80C3 17n80c
Text: SPW17N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 247 • Ultra low gate charge VDS 800 V RDS(on) 0.29 Ω •=Periodic avalanche rated
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SPW17N80C3
P-TO247
Q67040-S4359
17N80C3
SPW17N80C3 INFINEON
SPW17N80C3
17n80c
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17n80c
Abstract: 17n80 Q67040-S4359 17n80c3 C1814
Text: SPW17N80C3 Final data Cool MOS Power Transistor Feature • Worldwide best RDS on in TO 247 Product Summary V VDS 800 • Ultra low gate charge R DS(on) • Periodic avalanche rated ID • New revolutionary high voltage technology • Extreme dv/dt rated
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SPW17N80C3
P-TO247
Q67040-S4359
17N80C3
17n80c
17n80
Q67040-S4359
17n80c3
C1814
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17n80
Abstract: 17n80c3 Q67040-S4359 to247 f SPW17N80C3 17n80c
Text: SPW17N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 800 V RDS(on) 0.29 Ω ID 17 A • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated
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SPW17N80C3
P-TO247
Q67040-S4359
17N80C3
17n80
17n80c3
Q67040-S4359
to247 f
SPW17N80C3
17n80c
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17n80
Abstract: 17n80c SPW17N80C3A 17N80C3
Text: SPW17N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 800 V RDS(on) 0.29 Ω ID 17 A P-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated
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SPW17N80C3
P-TO247
Q67040-S4359
17N80C3
17n80
17n80c
SPW17N80C3A
17N80C3
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17n80c3
Abstract: SPW17N80C3 SPW17N80C3 INFINEON 17n80c
Text: SPW17N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature New revolutionary high voltage technology Product Summary Worldwide best R DS on in TO 247 VDS 800 V Ultra low gate charge RDS(on) 290 m Periodic avalanche rated
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SPW17N80C3
P-TO247
Q67040-S4359
17N80C3
17n80c3
SPW17N80C3
SPW17N80C3 INFINEON
17n80c
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17N80C3
Abstract: 17n80 SPW17N80C3
Text: SPW17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 800 V RDS(on) 0.29 Ω ID 17 A P-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type
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SPW17N80C3
P-TO247
Q67040-S4359
17N80C3
17N80C3
17n80
SPW17N80C3
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MOSFET 17N80c3
Abstract: MOSFET 17N80c3 Data sheet Diode S17
Text: SPW17N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications
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SPW17N80C3
PG-TO247-3
17N80C3
009-134-A
O-247
PG-TO247-3
MOSFET 17N80c3
MOSFET 17N80c3 Data sheet
Diode S17
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17n80
Abstract: No abstract text available
Text: SPW17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 800 V RDS(on) 0.29 Ω ID 17 A PG-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type
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SPW17N80C3
PG-TO247
SPW17N80C3
Q67040-S4359
17N80C3
17n80
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MOSFET 17N80c3
Abstract: 17n80c3 17n80c 17n80 JESD22 SPW17N80C3
Text: SPW17N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications
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SPW17N80C3
PG-TO247-3
17N80C3
MOSFET 17N80c3
17n80c3
17n80c
17n80
JESD22
SPW17N80C3
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MOSFET 17N80c3
Abstract: Diode S17 DS800 PG-TO-247-3 SPW17N80C3 17n80c
Text: SPW17N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications
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SPW17N80C3
PG-TO247-3
17N80C3
MOSFET 17N80c3
Diode S17
DS800
PG-TO-247-3
SPW17N80C3
17n80c
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MOSFET 17N80c3
Abstract: 17n80 17n80c3 17n80c MOSFET 17N80c3 Data sheet JESD22 SPW17N80C3 spw17n80 PG-TO247-3
Text: SPW17N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications
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SPW17N80C3
PG-TO247-3
17N80C3
009-134-A
O-247
PG-TO247-3
MOSFET 17N80c3
17n80
17n80c3
17n80c
MOSFET 17N80c3 Data sheet
JESD22
SPW17N80C3
spw17n80
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SPW17N80C3
Abstract: 17N80C3 17n80 VW400
Text: SPW17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 800 V RDS(on) 0.29 Ω ID 17 A PG-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type
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SPW17N80C3
PG-TO247
Q67040-S4359
17N80C3
SPW17N80C3
17N80C3
17n80
VW400
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17n80
Abstract: SPW17N80C3 17n80c
Text: SPW17N80C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 247 • Ultra low gate charge VDS 800 V RDS(on) 0.29 Ω • Periodic avalanche rated ID 17 A • Extreme dv/dt rated
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SPW17N80C3
P-TO247
Q67040-S4359
17N80C3
17n80
SPW17N80C3
17n80c
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SIPC69N60C3
Abstract: SPW20N60S5 equivalent sipc01n80c2 P-Channel Depletion Mosfets SKP15N60 BUZ78 equivalent SPNA2N80C2 BUP314 SIPC26N80C3 TDA16822
Text: File name Products Silicon Carbide Diodes thinQ 300V / 600V SDP06S60 SDP04S60 SDB10S30 SiC_Pspice.zip Smart High Side Switches High-Current PROFET BTS555 BTS550P BTS650P PROFET_Pspice.exe Smart Low Side Switches TEMPFET / Speed TEMPFET HITFET BTS114A BSP78
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SDP06S60
SDP04S60
SDB10S30
BTS555
BTS550P
BTS650P
BTS114A
BSP78
BTS115A
BTS134D
SIPC69N60C3
SPW20N60S5 equivalent
sipc01n80c2
P-Channel Depletion Mosfets
SKP15N60
BUZ78 equivalent
SPNA2N80C2
BUP314
SIPC26N80C3
TDA16822
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SIPC69N60C3
Abstract: sipc01n80c2 SPA11N60C3 equivalent SIPC26N80C3 SPW20N60S5 equivalent SIPC14N60C3 SIPC16N80C3 SPA03N60S5 SPP11N60S5 equivalent CoolMOS Power Transistor
Text: Saber Libraries for CoolMOS Power Transistors Models provided by Infineon are not warranted by Infineon as fully representing all the specifications and operating characteristics of the semiconductor product to which the model relates. The models describe the characteristics of typical devices. In all cases, the
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tPA20N60C3
SPB20N60C3
SPP20N60C3
SPW20N60C3
SIPC26N60C3
SPW47N60C3
SIPC69N60C3
OT223
SPNA02N80C2
SIPC01N80C2
SIPC69N60C3
sipc01n80c2
SPA11N60C3 equivalent
SIPC26N80C3
SPW20N60S5 equivalent
SIPC14N60C3
SIPC16N80C3
SPA03N60S5
SPP11N60S5 equivalent
CoolMOS Power Transistor
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TDA 16822
Abstract: 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3
Text: ICs: SMPS, CoolSET TM TM – D i s c r e t e s : C o o l M O S , I G B T, t h i n Q ! Pow e r Ma n a g e m e n t & Su p p l y : : AC / D C Se l e c t i o n Gu i d e www.infineon.com/power Never stop thinking. TM Introduction TODAY’S MODERN LIFE style leads to a fast growing energy requirement as
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B152-H8202-X-X-7600
TDA 16822
04N60C3 equivalent
ICE1QS01 equivalent
tda 3050
tda 1040
TDA 16846
TDA 16888
1QS01
07N60C3 mosfet transistor
04n60c3
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Buck-Boost Converter advantages
Abstract: SPA11N80C3 ice1qs02 tda16846 CoolMOS Power Transistor tda4605 application note TDA4605-3 TDA16888 ICE1QS01 equivalent transistor
Text: ICs: SMPS, CoolSET TM – Discretes: CoolMOS TM, thinQ! TM Power Management & Supply AC/DC Selection Guide www.infineon.com/power May 2006 Introduction T O D A Y ’ S M O D E R N L I F E S T Y L E leads to a fast-growing energy requirement as more and more people are able to afford electronic equipment.
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B152-H8202-G4-X-7600
Buck-Boost Converter advantages
SPA11N80C3
ice1qs02
tda16846
CoolMOS Power Transistor
tda4605 application note
TDA4605-3
TDA16888
ICE1QS01 equivalent
transistor
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ICE3B0365J
Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)
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SPP21N50C3
SPA21N50C3
SPI21N50C3
SPP16N50C3
SPA16N50C3
SPI16N50C3
SPW21N50C3
SPP12N50C3
SPA12N50C3
SPI12N50C3
ICE3B0365J
ICE3BR4765J
TDA16888
ICE2A765P2
ICE2PCS01G
ICE1PCS02G
ICE2B0565
ICE1PCS02
ICE2pcs02
IPI60R099CP
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BUZ90af
Abstract: hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 6n60 MGF1302-15 SSP 50N06 2n10l
Text: МИКРОСХЕМЫ 1 ПОЛЕВЫЕ ТРАНЗИСТОРЫ ИМПОРТНЫЕ Наименование 2SJ 103 2SJ 200 2SJ 306 2SJ 307 2SJ 449 2SJ 79 2SK 1023 2SK 1058 2SK 1060 2SK 107 2SK 1082 2SK 1102 2SK 1117 2SK 1118 2SK 1120 2SK 1162 2SK 118 2SK 1198
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O-251AA
O-247AC
O-220AB
PowerSO-20
BUZ90af
hv82
MGF4919G-01
MGF4919G
MGF2407A-01
BUZ80AF1
6n60
MGF1302-15
SSP 50N06
2n10l
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BUP213
Abstract: BSS123L6327 BSS123E6327 bup314d IPD06N03LAG BSP170PE6327T BSP315 SPD06N80C3XT BSP295-L6327 BSP129E6327
Text: Mosfets TO-218AB TO-220AB and TO-220 1-G TO-220FP TO-247 1 G 2 D 3 S 1-G 1-G 2-C 2-D 3-E TO-262 NEW! 3-S D-PAK, D2-PAK and TO-252 D D 2 S 3-S 3 SO-8 Dual G2 S2 1 3-D D2 D2 D 5 3-S 2-D G2 1 D 2 D G1 G 1 D1 4 3 2 2 1 G 6 7 D 8 D D 8 7 D 6 D 2-D 4 D D C 3 2S
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O-218AB
O-220AB
O-220
O-220FP
O-247
O-262
O-252
O-263
OT-323
OT-363
BUP213
BSS123L6327
BSS123E6327
bup314d
IPD06N03LAG
BSP170PE6327T
BSP315
SPD06N80C3XT
BSP295-L6327
BSP129E6327
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3bs02
Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather
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Infineo866-95
B152-H8926-G2-X-7600
NB08-1069
3bs02
2bs01
08P06P
TDA 16888
ICE2pcs02
tda16846
ICE3B1565J
mosfet 18p06p
TDA4605
ICE3B0365J
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igbt welding machine scheme
Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and
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PX3544
Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly
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lead519
B152-H9345-G2-X-7600
PX3544
PX7510
PX3560
ICE2AS01 equivalent
PX3540
Primarion PX3540
ice3br0665j
PRIMARION px3560
ice3br4765
ICE3BR1765J
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600V igbt dc to dc buck converter
Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
Text: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]
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B192-H6780-G11-X-7600
SP000008186
VDSL6100i-E
600V igbt dc to dc buck converter
TRANSISTOR SMD CODE PACKAGE SOT89
bts 2140 1b data sheet
TRANSISTOR SMD CODE PACKAGE SOT23
PSB 6970 HL V1.3
PEF 24628 E V1.2-G
infineon psb 6970
PEF 4265 T V2.1
HT 1200-4
SLB 9635
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