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Abstract: No abstract text available
Text: SSM5N05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N05FU High Speed Switching Applications Unit: mm • Optimum for high-density mounting in small packages • Low on-resistance: Ron = 0.8 Ω max (@VGS = 4 V) : Ron = 1.2 Ω (max) (@VGS = 2.5 V)
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SSM5N05FU
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SSM5N05FU
Abstract: No abstract text available
Text: SSM5N05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N05FU High Speed Switching Applications • Small package • Low on resistance : Ron = 0.8 Ω max (@VGS = 4 V) : Ron = 1.2 Ω (max) (@VGS = 2.5 V) • Low gate threshold voltage
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SSM5N05FU
SSM5N05FU
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Untitled
Abstract: No abstract text available
Text: SSM5N05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N05FU High Speed Switching Applications Unit: mm • Small package • Low on resistance : Ron = 0.8 Ω max (@VGS = 4 V) : Ron = 1.2 Ω (max) (@VGS = 2.5 V) • Low gate threshold voltage
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SSM5N05FU
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SSM5N05FU
Abstract: No abstract text available
Text: SSM5N05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N05FU High Speed Switching Applications Unit: mm • Small package · Low on resistance : Ron = 0.8 Ω max (@VGS = 4 V) : Ron = 1.2 Ω (max) (@VGS = 2.5 V) · Low gate threshold voltage
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SSM5N05FU
SSM5N05FU
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SSM5N05FU
Abstract: No abstract text available
Text: SSM5N05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N05FU High Speed Switching Applications Unit: mm • Optimum for high-density mounting in small packages • Low on-resistance: Ron = 0.8 Ω max (@VGS = 4 V) : Ron = 1.2 Ω (max) (@VGS = 2.5 V)
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SSM5N05FU
SSM5N05FU
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SSM5N05FU
Abstract: No abstract text available
Text: SSM5N05FU 東芝電界効果トランジスタ シリコンNチャネルMOS形 SSM5N05FU ○ 高速スイッチング 単位: mm • 小型パッケージで高密度実装に最適。 • オン抵抗が低い。 : Ron = 0.8 Ω 最大 (@VGS = 4 V) : Ron = 1.2 Ω (最大) (@VGS = 2.5 V)
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SSM5N05FU
SSM5N05FU
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Untitled
Abstract: No abstract text available
Text: SSM5N05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N05FU High Speed Switching Applications Unit: mm • Optimum for high-density mounting in small packages • Low on-resistance: Ron = 0.8 Ω max (@VGS = 4 V) : Ron = 1.2 Ω (max) (@VGS = 2.5 V)
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SSM5N05FU
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SSM5N05FU
Abstract: No abstract text available
Text: SSM5N05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N05FU High Speed Switching Applications Unit: mm • Optimum for high-density mounting in small packages • Low on-resistance: Ron = 0.8 Ω max (@VGS = 4 V) : Ron = 1.2 Ω (max) (@VGS = 2.5 V)
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SSM5N05FU
SSM5N05FU
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Untitled
Abstract: No abstract text available
Text: SSM5N05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N05FU High Speed Switching Applications Unit: mm • Optimum for high-density mounting in small packages • Low on-resistance: Ron = 0.8 Ω max (@VGS = 4 V) : Ron = 1.2 Ω (max) (@VGS = 2.5 V)
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SSM5N05FU
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5252 F 1009 4-pin
Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
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lm2804
Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.
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BCE0030C
S-167
BCE0030D
lm2804
marking 513 SOD-323
land dpu 230
toshiba diode 1SS416 footprint
5252 F solar
sot23 2fv
TAH8N401K
IC sj 4558
zener diode reference guide
rn4983
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SSM3J307T
Abstract: SSM3J328R SSM3J334R
Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g
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200-mA
BCE0030D
SSM3J307T
SSM3J328R
SSM3J334R
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SSM3K7002
Abstract: ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T
Text: S-MOS Series Small-Signal MOSFETs for Switching PRODUCT GUIDE S -MOS Family S-MOS Family Toshiba presents a range of small-signal MOSFET S-MOS devices which have been developed for various switching, interface and DC/DC converter applications. These MOSFETs have been classified into families according to application,
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3402C-0209
SSM3K7002
ESM 310
SSM3J16FU
SSM3K03TE
zener diode reference guide
SSM5N03FE
US6 KEC
SSM5G01TU
6798
SSM3J13T
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ESM 740
Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.
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SCE0003A
ESM 740
transistor SMD t04 51
D245A
LM2804
transistor SMD t04
Solar Garden Light Controller 4 pin
2fu smd transistor
transistor t04 smd
pnp Octal Darlington Transistor Arrays DIP
WB126
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TOSHIBA MG150N2YS40
Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入
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050106DAA1
/SC-70
YTF612
2SK2381
YTF841
2SK2387
YTF442
2SK2149
YTF613
TOSHIBA MG150N2YS40
mg75n2ys40
MG15N6ES42
mg150n2ys40
2SK150A
toshiba s2530a
2sk270a
MG8N6ES42
MG15G1AL2
mg75j2ys40
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TPCA*8064
Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
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BCE0082B
TPCA*8064
TK12A10K3
TPCA8077
2SK3567 equivalent
SSM3J328
TPCA8077-H
TJ11A10M3
TK50E06K3A
TPCA*8077
TPCA8028
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8aa1
Abstract: esm 310 2SK982 733 SSOP10 kef q1 datasheet SSM3J13T SSM3K03TE 2SJ148 2SJ167 2SJ168
Text: 小型面実装MOS FET S-MOSシリーズ ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製
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050106DAA1
12341D3AG
BDJ0099A
8aa1
esm 310
2SK982
733 SSOP10
kef q1 datasheet
SSM3J13T
SSM3K03TE
2SJ148
2SJ167
2SJ168
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transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243
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SC-43)
2SC1815
TPS615
TPS616
TPS610
transistor bc 245
247Y
smd transistor h2a
gt30g122
gt35j321
GT45F123
MARKING SMD PNP TRANSISTOR h2a
GT45F122
GT45f122 Series
gt30f122
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tpc8118 equivalent replacement
Abstract: SSM3J307T Zener diode smd 071 A01
Text: 2009-9 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
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BCE0082A
tpc8118 equivalent replacement
SSM3J307T
Zener diode smd 071 A01
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TPCA*8030
Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S
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TC7SZ126FU
SC-88A
OT-353
BCJ0052E
BCJ0052D
TPCA*8030
lm2804
TPCA*8036
2SK2033
TPC8037
Sj 88a diode
TPCA8028
TPC8A03
TC4W53FU
IC sj 4558
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HN4C06J
Abstract: te85l F 1SS302 2SC4117 SUFFIX TE85L Toshiba 2SK2145 HN1B04FE rn4983 US6 KEC RN1306
Text: Small-Signal Multi-Chip Discrete Devices Transistors and Diodes PRODUCT GUIDE Contents What Is a Multi-Chip Discrete Device? • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 2
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TPCA8077
Abstract: TK12A10K3 TK25E06K3 TPCA*8030 TJ11A10M3 SSM6J501NU TPCA8057-H 2SK4112 TPC8217-H TK50E06K3A
Text: 製品カタログ 2010-3 東芝半導体 製品カタログ MOSFET h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3
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BCJ0082C
BCJ0082B
TPCA8077
TK12A10K3
TK25E06K3
TPCA*8030
TJ11A10M3
SSM6J501NU
TPCA8057-H
2SK4112
TPC8217-H
TK50E06K3A
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SCS-70
Abstract: SSM6J08FU HN1K06FU
Text: 5 Small-Signal MOSFETs Toshiba present a range of small-signal MOSFET S-MOS devices developed for various switching and interface applications. The high-current S-MOS Family has been developed principally for high-current switching applications and has been added to
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SC-59)
SCS-70)
SSM6J06FU
SSM6J08FU
SSM6K07FU
SSM6J07FU
SSM3J13T
SSM3K11T
SSM3K01T
SSM3J01T
SCS-70
HN1K06FU
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TC7SZ08FU
Abstract: lm2804 TC7S14F sot-24 led TC7SZ126FU TC7SZ125FU SOT-24 te85l F TC7W04F 2sc2240 equivalent
Text: General-Purpose Small-Signal Surface-Mount Devices PRODUCT GUIDE CONTENTS 1. Package Information 3 to 6 2. Small Signal Transistors and Diodes 2.1 New Products 2.2 Small-Signal Transistors 2.3 Bias Resistor Transistora BRTs 6.1 Single Output type 6.2 Dual Output type
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3407C-0209
TC7SZ08FU
lm2804
TC7S14F
sot-24 led
TC7SZ126FU
TC7SZ125FU
SOT-24
te85l F
TC7W04F
2sc2240 equivalent
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