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    ST MAKE SMD TRANSISTOR Search Results

    ST MAKE SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ST MAKE SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    st smd diode marking code

    Abstract: smd diode order marking code stmicroelectronics TRANSISTOR SMD MARKING CODES ESCC 5204/002 smd transistor A1 2N5153HR marking SMD CODES NV SMD TRANSISTOR smd code book B3 transistor smd marking codes list
    Text: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Features BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 2 3 1 TO-257 TO-39 2 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■ ESCC qualified


    Original     		2N5153HR O-257 2N5153HR O-257 st smd diode marking code smd diode order marking code stmicroelectronics TRANSISTOR SMD MARKING CODES ESCC 5204/002 smd transistor A1 marking SMD CODES NV SMD TRANSISTOR smd code book B3 transistor smd marking codes list PDF

    520301006

    Abstract: Table of smd IC marking codes smd transistor marking A2 TRANSISTOR SMD MARKING CODES ESCC 5203/010 2N5154S1 st smd diode marking code NV SMD TRANSISTOR smd diode order marking code stmicroelectronics smd marking codes list
    Text: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Features BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 2 TO-39 TO-257 2 1 3 • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics ■ ESCC qualified


    Original     		2N5154HR O-257 2N5154HR O-257 520301006 Table of smd IC marking codes smd transistor marking A2 TRANSISTOR SMD MARKING CODES ESCC 5203/010 2N5154S1 st smd diode marking code NV SMD TRANSISTOR smd diode order marking code stmicroelectronics smd marking codes list PDF

    st smd IC marking code

    Abstract: 2N5154ESYHRT
    Text: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet - production data Features 2 TO-39 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 3 1 TO-257 2 3 1 • Hi-Rel NPN bipolar transistor • Linear gain characteristics


    Original     		2N5154HR O-257 2N5154HR O-257 DocID15387 st smd IC marking code 2N5154ESYHRT PDF

    capacitor 10uF/63V

    Abstract: ds10a capacitor 100uF 50V capacitor 1206 63V hex head screws 10uf 63v capacitor AB-45 banana socket datasheet diode gp 429 SMD 1206 RESISTOR 100 OHMS
    Text: The innovative Semiconductor Company! HVV0405-175 High Voltage, High Ruggedness UHF Pulsed Power Transistor 400-500 MHz, 300 s Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		HVV0405-175 EG-01-DS10A 429-HVVi capacitor 10uF/63V ds10a capacitor 100uF 50V capacitor 1206 63V hex head screws 10uf 63v capacitor AB-45 banana socket datasheet diode gp 429 SMD 1206 RESISTOR 100 OHMS PDF

    520301006R

    Abstract: 2N5154RESYHRG
    Text: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet - production data Features 2 TO-39 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 3 1 TO-257 2 1 3 • Hi-Rel NPN bipolar transistor • Linear gain characteristics


    Original     		2N5154HR O-257 2N5154HR O-257 DocID15387 520301006R 2N5154RESYHRG PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Datasheet - production data Features 2 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 3 1 TO-257 TO-39 2 3 1 • Hi-Rel PNP bipolar transistor • Linear gain characteristics


    Original     		2N5153HR O-257 2N5153HR O-257 DocID15386 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Datasheet - production data Features 2 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 3 1 TO-257 TO-39 2 3 1 • Hi-Rel PNP bipolar transistor • Linear gain characteristics


    Original     		2N5153HR O-257 2N5153HR O-257 DocID15386 PDF

    uhf 150w mosfet

    Abstract: 10uF CAPACITOR 1210 PACKAGE capacitor 10uF/63V smd transistor EK 10uf 63v capacitor 50V 1215MHZ banana socket datasheet capacitor 220uF/63V diode gp 429 DS2346
    Text: The innovative Semiconductor Company! HVV0912-150 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10 s Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		HVV0912-150 121eliable. EG-01-DS11A or429-HVVi uhf 150w mosfet 10uF CAPACITOR 1210 PACKAGE capacitor 10uF/63V smd transistor EK 10uf 63v capacitor 50V 1215MHZ banana socket datasheet capacitor 220uF/63V diode gp 429 DS2346 PDF

    smd transistor marking A4

    Abstract: PowerSO-10RF marking st smd diode marking code J-STD-020B LET9060S LET9060STR LET9060TR stmicroelectronics PowerSO-10RF marking
    Text: LET9060 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60 W with 17.2 dB gain @ 960 MHz / 28 V ■ New RF plastic package


    Original     		LET9060 PowerSO-10RF LET9060 PowerSO-10RF. smd transistor marking A4 PowerSO-10RF marking st smd diode marking code J-STD-020B LET9060S LET9060STR LET9060TR stmicroelectronics PowerSO-10RF marking PDF

    Untitled

    Abstract: No abstract text available
    Text: PD84006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet −production data Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz


    Original     		PD84006-E 2002/95/EC PowerSO-10RF PD84006-E PDF

    PD20010-E

    Abstract: PD20010
    Text: PD20010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V ■ Plastic package


    Original     		PD20010-E 2002/95/EC PowerSO-10RF PD20010-E PD20010 PDF

    PD85015s-e

    Abstract: PD85015 AN1294 PD85015-E
    Text: PD85015-E PD85015S-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 16 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection


    Original     		PD85015-E PD85015S-E 2002/95/EC PowerSO-10RF PD85015-E PD85015s-e PD85015 AN1294 PDF

    ERJ8GEYJ100V

    Abstract: Johanson Technology C1206C102K1RACTU C1206C103K1RACTU 445-4109-2-ND 478-2666-1-ND 251R15S
    Text: HVV1012-250 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications FEATURES The innovative Semiconductor Company! Silicon MOSFET Technology Operation from 24V to 50V


    Original     		HVV1012-250 429-HVVi EG-01-DS09B ERJ8GEYJ100V Johanson Technology C1206C102K1RACTU C1206C103K1RACTU 445-4109-2-ND 478-2666-1-ND 251R15S PDF

    PD20015-E

    Abstract: PD-20015
    Text: PD20015-E RF power transistor, LdmoST family N-channel enhancement-mode lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V ■ Plastic package


    Original     		PD20015-E 2002/95/EC PowerSO-10RF PD20015-E PD-20015 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD84010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 10 W with 14.3 dB gain @ 870 MHz / 7.5 V ■ Plastic package


    Original     		PD84010-E 2002/95/EC PowerSO-10RF PD84010-E PDF

    PD85025s-e

    Abstract: NV SMD TRANSISTOR PD85025 PD85025S AN1294 JESD97 J-STD-020B PD85025-E
    Text: PD85025-E PD85025S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Target Specification Features • Excellent thermal stability ■ Common source configuration ■ POUT = 25W with 15.7dB gain @ 870MHz / 13.6V ■ Plastic package


    Original     		PD85025-E PD85025S-E 870MHz 2002/93/EC PowerSO-10RF PD85025-E PD85025s-e NV SMD TRANSISTOR PD85025 PD85025S AN1294 JESD97 J-STD-020B PDF

    AN1294

    Abstract: J-STD-020B PD85035-E PD85035S-E PD85035STR-E PD85035TR-E PD85035
    Text: PD85035-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.9 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection


    Original     		PD85035-E 2002/95/EC1 PowerSO-10RF PD85035-E AN1294 J-STD-020B PD85035S-E PD85035STR-E PD85035TR-E PD85035 PDF

    AN1294

    Abstract: J-STD-020B PD57030-E PD57030S-E PD57030STR-E PD57030TR-E
    Text: PD57030-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30 W with 14dB gain @ 945 MHz / 28 V ■ New RF plastic package Description


    Original     		PD57030-E PowerSO-10RF PowerSO-10RF. AN1294 J-STD-020B PD57030-E PD57030S-E PD57030STR-E PD57030TR-E PDF

    PD85006

    Abstract: PD85006-E AN1294 GRM39-X7R103K50C560 PD84002 PD85 EXCELDRC35C 706 SMD ST T112-16 16208
    Text: PD85006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 15 dB gain @ 870 MHz/13.6 V ■ Plastic package


    Original     		PD85006-E Hz/13 2002/95/EC PowerSO-10RF PD85006-E PD85006 AN1294 GRM39-X7R103K50C560 PD84002 PD85 EXCELDRC35C 706 SMD ST T112-16 16208 PDF

    st smd diode marking code

    Abstract: 2N5551HR marking code my SMD Transistor npn smd diode order marking code stmicroelectronics ST MAKE SMD TRANSISTOR 2N5551 marking code br 39 SMD NV SMD TRANSISTOR TRANSISTOR SMD MARKING CODES
    Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V - 0.5 A Features 3 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 Operating temperature range -65°C to +200°C 1 1 2 2 3 TO-18 • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics ■ ESCC qualified


    Original     		2N5551HR 2N5551HR st smd diode marking code marking code my SMD Transistor npn smd diode order marking code stmicroelectronics ST MAKE SMD TRANSISTOR 2N5551 marking code br 39 SMD NV SMD TRANSISTOR TRANSISTOR SMD MARKING CODES PDF

    st smd diode marking code

    Abstract: smd diode order marking code stmicroelectronics 2N5401HR NV SMD TRANSISTOR ST MAKE SMD TRANSISTOR st marking code TRANSISTOR SMD MARKING CODES MARKING SMD PNP TRANSISTOR R SOC5401 175-LM
    Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V - 0.5 A Features BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 1 Operating temperature range -65°C to +200°C 2 3 1 2 3 TO-18 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■ ESCC qualified


    Original     		2N5401HR 2N5401HR st smd diode marking code smd diode order marking code stmicroelectronics NV SMD TRANSISTOR ST MAKE SMD TRANSISTOR st marking code TRANSISTOR SMD MARKING CODES MARKING SMD PNP TRANSISTOR R SOC5401 175-LM PDF

    15354 time switch

    Abstract: 15354 SOC3700 ESCC 5201-004 NV SMD TRANSISTOR st smd diode marking code 2N3700HR SMD TRANSISTOR LIST st marking code TRANSISTOR SMD MARKING CODES
    Text: 2N3700HR Hi-Rel NPN bipolar transistor 80 V - 1 A Features BVCEO 80 V IC max 1A HFE at 10 V - 150 mA > 100 Operating temperature range 3 1 1 2 -65°C to +200°C 2 3 TO-18 • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics ■ ESCC qualified


    Original     		2N3700HR 2N3700HR 15354 time switch 15354 SOC3700 ESCC 5201-004 NV SMD TRANSISTOR st smd diode marking code SMD TRANSISTOR LIST st marking code TRANSISTOR SMD MARKING CODES PDF

    ST 0841

    Abstract: ST 0721 0721 marking st 12089 MARKING code mf stmicroelectronics STMicroelectronics marking code 0721 J-STD-020B PD55003L-E PD55003LE TRANSISTOR SMD MARKING CODE 703
    Text: PD55003L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT =3 W mith 17dB gain@500 MHz/12.5 V ■ New leadless plastic package ■ ESD protection


    Original     		PD55003L-E Hz/12 2002/95/EC PD55003L-E ST 0841 ST 0721 0721 marking st 12089 MARKING code mf stmicroelectronics STMicroelectronics marking code 0721 J-STD-020B PD55003LE TRANSISTOR SMD MARKING CODE 703 PDF

    st 54003

    Abstract: TRANSISTOR AO SMD MARKING J-STD-020B PD54003L-E
    Text: PD54003L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT =3 W mith 20dB gain@500 MHz ■ New leadless plastic package ■ ESD protection


    Original     		PD54003L-E 2002/95/EC PD54003L-E st 54003 TRANSISTOR AO SMD MARKING J-STD-020B PDF