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    Untitled

    Abstract: No abstract text available
    Text: STAC4932B HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Excellent thermal stability • Common source push-pull configuration • POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz • Pulse conditions: 1 msec - 10%


    Original     		PDF STAC4932B 2002/95/EC STAC244B STAC4932B DocID17153

    STAC3932F

    Abstract: RG316-25 ATC 100C 100 pf, ATC Chip Capacitor 15513 100C 700B TL11 capacitor 2200 uF 16 v
    Text: STAC3932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 580 W typ. with 24.6 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European


    Original     		PDF STAC3932F 2002/95/EC STAC244F STAC3932F RG316-25 ATC 100C 100 pf, ATC Chip Capacitor 15513 100C 700B TL11 capacitor 2200 uF 16 v

    STAC244

    Abstract: drying oven STAC265F M252 substitution AN3232 C10100 M252 STAC265B seho
    Text: AN3232 Application note Mounting recommendations for STAC boltdown packages Introduction RF power transistors are amongst the highest power density devices in the semiconductor industry. It is crucial to the reliability and performance of such devices to consider


    Original     		PDF AN3232 STAC244B STAC265B STAC244F STAC265F STAC244 drying oven M252 substitution AN3232 C10100 M252 seho

    MEC 1300

    Abstract: STAC4932 STAC4932B 1000WF
    Text: STAC4932B RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions : 1 msec - 10% ■ In compliance with the 2002/95/EC European


    Original     		PDF STAC4932B 2002/95/EC STAC244B STAC4932B MEC 1300 STAC4932 1000WF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    Untitled

    Abstract: No abstract text available
    Text: STAC2942F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European


    Original     		PDF STAC2942F 2002/95/EC STAC244F STAC2942F

    MEC 1300

    Abstract: No abstract text available
    Text: STAC4932B RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions : 1 msec - 10% ■ In compliance with the 2002/95/EC European


    Original     		PDF STAC4932B 2002/95/EC STAC244B STAC4932B STAC4932 MEC 1300

    FERRITE TOROID

    Abstract: ST406 measure current toroid 200 pF air variable capacitor
    Text: STAC2932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 300 W min. with 20 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European


    Original     		PDF STAC2932F 2002/95/EC STAC244F STAC2932F FERRITE TOROID ST406 measure current toroid 200 pF air variable capacitor

    STAC2942B

    Abstract: stac2942 FERRITE TOROID R0060
    Text: STAC2942B RF power transistor HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European directive


    Original     		PDF STAC2942B 2002/95/EC STAC244B STAC2942B STAC2942 stac2942 FERRITE TOROID R0060

    stac2942

    Abstract: STAC2942B FERRITE TOROID transistor marking code HF
    Text: STAC2942B RF power transistor HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European


    Original     		PDF STAC2942B 2002/95/EC STAC2942B STAC244B STAC2942 FERRITE TOROID transistor marking code HF

    stac2942

    Abstract: STAC2942B ST406
    Text: STAC2942B RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European directive


    Original     		PDF STAC2942B 2002/95/EC STAC244B STAC2942B STAC2942 stac2942 ST406

    STAC4932

    Abstract: STAC4932B 1715-3
    Text: STAC4932B RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions: 1 msec - 10% ■ In compliance with the 2002/95/EC European


    Original     		PDF STAC4932B 2002/95/EC STAC244B STAC4932B STAC4932 1715-3

    Untitled

    Abstract: No abstract text available
    Text: STAC2932F RF power transistor HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 300 W min. with 20 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European


    Original     		PDF STAC2932F 2002/95/EC STAC2932F STAC244F

    RG316-25

    Abstract: No abstract text available
    Text: STAC3932B RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 580 W typ. with 24.6 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European directive Description


    Original     		PDF STAC3932B 2002/95/EC STAC3932B STAC244B STAC3932 RG316-25

    STAC2942F

    Abstract: Part Marking ST mosfets marking code 8Ff 17122 RG316-25
    Text: STAC2942F HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European directive


    Original     		PDF STAC2942F 2002/95/EC STAC2942F STAC244F STAC2942FW Part Marking ST mosfets marking code 8Ff 17122 RG316-25

    stac2942

    Abstract: No abstract text available
    Text: STAC2942B RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs Datasheet - production data Features • Gold metallization • Excellent thermal stability • Common source push-pull configuration • POUT = 350 W min. with 21 dB gain @ 175 MHz • In compliance with the 2002/95/EC European


    Original     		PDF STAC2942B 2002/95/EC STAC244B STAC2942B STAC2942BW STAC2942 DocID15501 stac2942

    Untitled

    Abstract: No abstract text available
    Text: STAC4932B HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Excellent thermal stability • Common source push-pull configuration • POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz • Pulse conditions: 1 msec - 10%


    Original     		PDF STAC4932B 2002/95/EC STAC244B STAC4932B DocID17153

    STAC2942F

    Abstract: FERRITE TOROID 43 toroid core stac2942
    Text: STAC2942F RF power transistor HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European


    Original     		PDF STAC2942F 2002/95/EC STAC244F STAC2942F FERRITE TOROID 43 toroid core stac2942

    STAC4932

    Abstract: STAC4932F st marking code STAC244F 1715
    Text: STAC4932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions: 1 msec - 10%


    Original     		PDF STAC4932F 2002/95/EC STAC244F STAC4932F STAC4932 st marking code STAC244F 1715

    stac2942

    Abstract: STAC2942B dow corning silicone compound C10100 STAC244 STAC265B "power semiconductor" phillips austerlitz
    Text: STEVAL-TDR029V1 RF power amplifier demonstration board based on the STAC2942B Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 700 W min ■ Gain: 20 dB typ. ■ Efficiency: 77 % typ ■ Harmonics: - 36 dBc max


    Original     		PDF STEVAL-TDR029V1 STAC2942B STEVAL-TDR029V1 STAC2942B stac2942 dow corning silicone compound C10100 STAC244 STAC265B "power semiconductor" phillips austerlitz

    MEC 1300

    Abstract: 2x100mA STAC244F
    Text: STAC4932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions: 1 msec - 10%


    Original     		PDF STAC4932F 2002/95/EC STAC244F STAC4932F STAC4932B MEC 1300 2x100mA

    STAC4932

    Abstract: No abstract text available
    Text: STAC4932B RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions : 1 msec - 10% ■ In compliance with the 2002/95/EC European


    Original     		PDF STAC4932B 2002/95/EC STAC244B STAC4932B STAC4932

    Untitled

    Abstract: No abstract text available
    Text: STAC9200 200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package Datasheet - preliminary data Features • Improved ruggedness: V BR DSS > 80 V • Load mismatch 65:1 all phases @ 200 W / 32 V / 860 MHz • POUT = 200 W min. (250 W typ.) with 16 dB gain @ 860 MHz


    Original     		PDF STAC9200 2002/95/EC STAC244B STAC9200 DocID025416