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    STAC244F Search Results

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    STAC3932F

    Abstract: RG316-25 ATC 100C 100 pf, ATC Chip Capacitor 15513 100C 700B TL11 capacitor 2200 uF 16 v
    Text: STAC3932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 580 W typ. with 24.6 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European


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    PDF STAC3932F 2002/95/EC STAC244F STAC3932F RG316-25 ATC 100C 100 pf, ATC Chip Capacitor 15513 100C 700B TL11 capacitor 2200 uF 16 v

    STAC244

    Abstract: drying oven STAC265F M252 substitution AN3232 C10100 M252 STAC265B seho
    Text: AN3232 Application note Mounting recommendations for STAC boltdown packages Introduction RF power transistors are amongst the highest power density devices in the semiconductor industry. It is crucial to the reliability and performance of such devices to consider


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    PDF AN3232 STAC244B STAC265B STAC244F STAC265F STAC244 drying oven M252 substitution AN3232 C10100 M252 seho

    Untitled

    Abstract: No abstract text available
    Text: STAC2942F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European


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    PDF STAC2942F 2002/95/EC STAC244F STAC2942F

    FERRITE TOROID

    Abstract: ST406 measure current toroid 200 pF air variable capacitor
    Text: STAC2932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 300 W min. with 20 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European


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    PDF STAC2932F 2002/95/EC STAC244F STAC2932F FERRITE TOROID ST406 measure current toroid 200 pF air variable capacitor

    Untitled

    Abstract: No abstract text available
    Text: STAC2932F RF power transistor HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 300 W min. with 20 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European


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    PDF STAC2932F 2002/95/EC STAC2932F STAC244F

    STAC2942F

    Abstract: Part Marking ST mosfets marking code 8Ff 17122 RG316-25
    Text: STAC2942F HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European directive


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    PDF STAC2942F 2002/95/EC STAC2942F STAC244F STAC2942FW Part Marking ST mosfets marking code 8Ff 17122 RG316-25

    STAC2942F

    Abstract: FERRITE TOROID 43 toroid core stac2942
    Text: STAC2942F RF power transistor HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European


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    PDF STAC2942F 2002/95/EC STAC244F STAC2942F FERRITE TOROID 43 toroid core stac2942

    STAC4932

    Abstract: STAC4932F st marking code STAC244F 1715
    Text: STAC4932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions: 1 msec - 10%


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    PDF STAC4932F 2002/95/EC STAC244F STAC4932F STAC4932 st marking code STAC244F 1715

    MEC 1300

    Abstract: 2x100mA STAC244F
    Text: STAC4932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions: 1 msec - 10%


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    PDF STAC4932F 2002/95/EC STAC244F STAC4932F STAC4932B MEC 1300 2x100mA

    SD2942

    Abstract: PD85035-E DB-85006L-960 STAC244B SD2941-10 SD57045 DB-85035-860 PowerSO-10RF PD20010-E PD55015-E
    Text: Radio frequency technologies for innovative solutions Selection guide December 2009 www.st.com/rf DMOS ISM & FM broadcast applications Part number Frequency MHz Pout (W) VDD (V) Gain (dB) Efficiency (%) Package SD2900 400 5 28 13.5 45 M113 SD2902 400 15


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    PDF SD2900 SD2902 SD2903 SD2904 SD2918 SD2931-10 SD2932 SD2933 SD2941-10 SD2942 SD2942 PD85035-E DB-85006L-960 STAC244B SD2941-10 SD57045 DB-85035-860 PowerSO-10RF PD20010-E PD55015-E

    STAC4932

    Abstract: STAC4932B
    Text: STAC4932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions: 1 msec - 10%


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    PDF STAC4932F 2002/95/EC STAC244F STAC4932F STAC4932B STAC4932

    STAC2932

    Abstract: STAC244F 206F
    Text: STAC2932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 300 W min. with 20 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European


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    PDF STAC2932F 2002/95/EC STAC244F STAC2932F STAC2932 STAC244F 206F