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    STATIC RAM 2048K 70 NS Search Results

    STATIC RAM 2048K 70 NS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    MD2114A/BVA Rochester Electronics LLC STATIC RAM; 1K X 4 Visit Rochester Electronics LLC Buy

    STATIC RAM 2048K 70 NS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MoBL CY62168DV30 PRELIMINARY 16M 2048K x 8 Static RAM Features power consumption by more than 99% when deselected Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW . The input/output pins (I/O0 through I/O7) are placed in a high-impedance state when: deselected Chip Enable 1 (CE1)


    Original     		PDF CY62168DV30 2048K 48-ball CY62168DV30

    Untitled

    Abstract: No abstract text available
    Text: EDI8G322048V White Electronic Designs 2048K x 32 STATIC RAM CMOS, HIGH SPEED MODULE FEATURES DESCRIPTION n 2048K x 32 bit CMOS Static n Random Access Memory n n n Access Times: 20, 25, and 35ns n Individual Byte Selects n Fully Static, No Clocks n TTL Compatible I/O


    Original     		PDF EDI8G322048V 2048K EDI8G322048V 1024Kx4

    cd 5151

    Abstract: 1MX4 EDI8G322048V EDI8G322048V20MMC DQ28-DQ31
    Text: EDI8G322048V 2048K x 32 Static RAM CMOS, High Speed Module Features DESCRIPTION n 2048K x 32 bit CMOS Static n Random Access Memory The EDI8G322048V is a high speed 64 megabit Static RAM module organized as 2048K words by 32 bits. This module is constructed from sixteen 1024K x 4 Static RAMs in SOJ


    Original     		PDF EDI8G322048V 2048K EDI8G322048V 1024K EDI8G322048V20MMC EDI8G322048V25MMC EDI8G322048V35MMC cd 5151 1MX4 EDI8G322048V20MMC DQ28-DQ31

    32-PIN

    Abstract: DS1249AB DS1249AB-100 DS1249AB-70 DS1249Y DS1249Y-100 DS1249Y-70
    Text: DS1249Y/AB 2048k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation Read and write access times as fast as 70 ns


    Original     		PDF DS1249Y/AB 2048k DS1249Y) DS1249AB) 32-pin A11TTP 32-pin, 600-mil DS1249Y/AB DS1249AB DS1249AB-100 DS1249AB-70 DS1249Y DS1249Y-100 DS1249Y-70

    Untitled

    Abstract: No abstract text available
    Text: EDI8G322048C 2048K x 32 Static R AM CMOS, High Speed Module RAM FEATURES DESCRIPTION n 2048K x 32 bit CMOS Static n Random Access Memory The EDI8G322048C is a high speed 64 megabit Static RAM module organized as 2048K words by 32 bits. This module is constructed from sixteen 1024K x 4 Static RAMs in SOJ


    Original     		PDF EDI8G322048C 2048K EDI8G322048C 1024K EDI8G322048C20MMC EDI8G322048C25MMC EDI8G322048C35MMC

    static ram 2048K 70 ns

    Abstract: DS1249AB DS1249Y
    Text: DS1249Y/AB DS1249Y/AB 2048K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC 1 32 VCC A16 2 31 A15 A14 3 30 A17 A12 4 29 WE A7 5 28 A13 • Read and write access times as fast as 70 ns A6 6 27


    Original     		PDF DS1249Y/AB 2048K DS1249Y) DS1249Y/AB static ram 2048K 70 ns DS1249AB DS1249Y

    55BVXI

    Abstract: CY62168DV30 CY62168DV30L-55BVXI CY62168DV30L-70BVXI CY62168DV30LL-55BVXI
    Text: CY62168DV30 MoBL 16-Mbit 2048K x 8 Static RAM Features addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW. The input/output pins (I/O0 through I/O7) are placed in


    Original     		PDF CY62168DV30 16-Mbit 2048K CY62168DV30 55BVXI CY62168DV30L-55BVXI CY62168DV30L-70BVXI CY62168DV30LL-55BVXI

    Untitled

    Abstract: No abstract text available
    Text: CY62168DV30 MoBL 16-Mbit 2048K x 8 MoBL® Static RAM Features addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW. The input/output pins (I/O0 through I/O7) are placed in


    Original     		PDF CY62168DV30 16-Mbit 2048K 48-ball

    32-PIN

    Abstract: DS1249AB DS1249AB-100 DS1249AB-70 DS1249Y DS1249Y-100 DS1249Y-70
    Text: DS1249Y/AB 2048k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation


    Original     		PDF DS1249Y/AB 2048k DS1249Y) DS1249AB) 32-pin 32-pin, 600-mil DS1249Y/AB 740-MIL DS1249AB DS1249AB-100 DS1249AB-70 DS1249Y DS1249Y-100 DS1249Y-70

    CYM1481A

    Abstract: CYM1481ALPS-70C CYM1481APS-70C
    Text: 81A CYM1481A 2048K x 8 SRAM Module Features are constructed from four 512K x 8 SRAMs in plastic surface-mount packages on an epoxy laminate board with pins. On-board decoding selects one of the SRAMs from the high-order address lines, keeping the remaining devices in


    Original     		PDF CYM1481A 2048K 16-megabit CYM1481A 38-M-00041 CYM1481ALPS-70C CYM1481APS-70C

    ds1249ab70

    Abstract: No abstract text available
    Text: DS1249Y/AB 2048k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation


    Original     		PDF DS1249Y/AB 2048k DS1249Y) DS1249AB) 32-pin AB-70# DS1249AB-85# DS1249AB-85IND# DS1249AB-70IND# DS1249AB-100 ds1249ab70

    28F020T

    Abstract: intel 28F020
    Text: 28F020 2048K 256K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 pS Typical Byte-Program — 4 second Chip-Program ■ 100,000 Erase/Program Cycles a 12.0 V ±5% V pp ■ High-Performance Read


    OCR Scan     		PDF 28F020 2048K E28F020-90 N28F020-90 E28F020-120 N28F020-120 E28FQ20-150 N28F020-150 TE28F02Q-90 TE28F020-120 28F020T intel 28F020

    Untitled

    Abstract: No abstract text available
    Text: D S 1249Y DALLAS SEMICONDUCTOR DS1249Y 2048K Nonvolatile SRAM PIN ASSIGNMENT FEATURES • Data retention in the absence of Vcc • Data is automatically protected during power loss • Replaces 256K x 8 volatile static RAM or EEPROM • Unlimited write cycles


    OCR Scan     		PDF 1249Y DS1249Y 2048K 32-pin DS1249Y 32-PIN Pbl4130

    Untitled

    Abstract: No abstract text available
    Text: DS 1249Y DALLAS DS1249Y 2048K Nonvolatile SR A M s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • 10 years minimum data retention in the absence of external power NC • Data is automatically protected during power loss • Directly replaces 256K x 8 volatile static RAM


    OCR Scan     		PDF 1249Y DS1249Y 2048K 32-pin 0013S02 DS1249Y 32-PIN

    Untitled

    Abstract: No abstract text available
    Text: AK5322048BW 2,097,152 Word by 32 Bit CMOS Dynamic Random Access Memory m O C IM T C O R PO m O N DESCRIPTION The Accutek AK5322048BW high density memory module is a CMOS dynamic RAM organized in 2048K x 32 bit words. The mod­ ule consists of four standard 1 Meg x 16 bits DRAMs in plastic SOJ


    OCR Scan     		PDF AK5322048BW 2048K

    Untitled

    Abstract: No abstract text available
    Text: AK5322048N 2,097,152 Word by 32 Bit CMOS Dynamic Random Access Memory MICROCIRCUIT CORPORATION DESCRIPTION minimi innmmi The Accutek AK5322048N high density memory module is a CMOS dynamic RAM organized in 2048K x 32 bit words. The module consists of four standard 1 Meg x 16 DRAMs in plastic TSOP


    OCR Scan     		PDF AK5322048N AK5322048N 2048K

    k536

    Abstract: k5361 K532-1
    Text: AK5362048WP 2,097,152 Word by 36 Bit CMOS Dynamic Random Access Memory MICROCIRCUIT CORPORATION DESCRIPTION The A ccutek AK53620482W P high density mem ory module is a CMOS dynam ic RAM organized in 2048K x 36 bit words. The m odule consists of sixteen standard 1 Meg x 4 DRAMs in plastic


    OCR Scan     		PDF AK53620482W 2048K AK5362048 k536 k5361 K532-1

    CYM1481

    Abstract: 100C CYM1471 PS08 LPS120 36PIN
    Text: fax id: 2006 -:V:V:V:V:V:Tÿ:- CYM1471 CYM1481 ^3»* 1024K x 8 SRAM Module 2048K x 8 SRAM Module Features • High-density 8-/16-megabit SRAM modules • High-speed CMOS SRAMs — Access tim e of 70 ns • Low active power are constructed from eight 1471 or sixteen (1481) 128K x 8


    OCR Scan     		PDF 8-/16-megabit CYM1471 CYM1481 16-megabit 1024K 2048K 100C PS08 LPS120 36PIN

    Untitled

    Abstract: No abstract text available
    Text: y CYM1471 CYM1481 1024KX 8 SRAM Module 2048K X 8 SRAM Module CYPR ESS Features Functional Description • High-density 8-/16-megabit SRAM modules • High-speed CMOS SRAMs — Access time of 85 ns • Low active power — 605 mW max. , 2M x 8 • Double-sided SMD technology


    OCR Scan     		PDF CYM1471 CYM1481 1024KX 2048K 8-/16-megabit CYM3471 CYM1481 16-megabit 1024K

    Untitled

    Abstract: No abstract text available
    Text: CYM1471 CYM1481 CYPRESS SEMICONDUCTOR 1024K X 8 SRAM Module 2048K X 8 SRAM Module Features Functional Description • High-density 8-/16-megabit SRAM modules • High-speed CMOS SRAMs — Access time of 85 ns • Low active power — 605 mVY max. , 2M x 8


    OCR Scan     		PDF CYM1471 CYM1481 1024K 2048K 8-/16-megabit CYM1471 CYM14S1 16-megabit 1024K

    BY324

    Abstract: BY436
    Text: AK5362048BWP 2,097,152 Word by 36 Bit CMOS Dynamic Random Access Memory MICROCIRCUIT CORPOEAHON DESCRIPTION The Accutek AK5362048BWP high density memory module is a CMOS dynamic RAM organized in 2048K x 36 bit words. The module consists of four standard 1 Meg x 16 bits DRAMs and two


    OCR Scan     		PDF AK5362048BWP 2048K AK5362048B BY324 BY436

    32-PIN

    Abstract: DS1249AB DS1249AB-100 DS1249AB-70 DS1249Y DS1249Y-100 DS1249Y-70
    Text: DS1249Y/AB 2048k Nonvolatile SRAM ww w.dalsem i.com PIN ASSIGNMENT FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation


    OCR Scan     		PDF DS1249Y/AB 2048k DS1249Y) DS1249AB) 32-pin DS1249 32-pin, 600-mil DS1249AB DS1249AB-100 DS1249AB-70 DS1249Y DS1249Y-100 DS1249Y-70

    real time clock with sram

    Abstract: 32-PIN DS1252Y-120 DS1252Y-150 DS1252
    Text: DS 1252Y PRELIMINARY DALLAS SEMICONDUCTOR DS1252Y 2048K NV SRAM with Phantom Clock PIN ASSIGNMENT FEATURES • Real time clock keeps track of hu ndredths of seconds, minutes, hours, days, date of the month, months, and years v cc A 15 A 17 • 256K x 8 NV SRAM directly replaces volatile static


    OCR Scan     		PDF DS1252Y 2048K 32-PIN real time clock with sram 32-PIN DS1252Y-120 DS1252Y-150 DS1252

    1 megabit 128K x 8 SRAM

    Abstract: No abstract text available
    Text: CYM1471 CYM1481 CYPRESS SEMICONDUCTOR 1024KX 8 SRAM Module 2048K X 8 SRAM Module Features Functional Description • High-density8-/16-megabit SRAM modules • High-speed CMOS SRAMs — Access time of 85 ns The CYM1471 and CYM1481 are highperformance 8-megabit and 16-megabit


    OCR Scan     		PDF CYM1471 CYM1481 High-density8-/16-megabit CYM1460/CYM1461 1024KX 2048K 1481PF-85C CYM1481LPF-- 14S1PS-85C 1481LPS-85C 1 megabit 128K x 8 SRAM