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    STH60N10FI Search Results

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    STH60N10FI Price and Stock

    Stelzner (Meters) STH60N10FI

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics STH60N10FI 60 2
    • 1 -
    • 10 $2.184
    • 100 $1.68
    • 1000 $1.68
    • 10000 $1.68
    Buy Now
    Quest Components STH60N10FI 48
    • 1 $4.5
    • 10 $2.25
    • 100 $2.25
    • 1000 $2.25
    • 10000 $2.25
    Buy Now

    STH60N10FI Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STH60N10/FI STMicroelectronics N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Original PDF
    STH60N10FI STMicroelectronics N-Channel Enhancement Mode Power MOS Transistor Original PDF
    STH60N10FI STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STH60N10FI Toshiba Power MOSFETs Cross Reference Guide Original PDF

    STH60N10FI Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STW60N10

    Abstract: STH60N10 STH60N10FI
    Text: STH60N10/FI STW60N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH60N10 STH60N10FI STW60N10 • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V 100 V < 0.025 Ω < 0.025 Ω < 0.025 Ω 60 A 36 A 60 A TYPICAL RDS(on) = 0.02 Ω AVALANCHE RUGGED TECHNOLOGY


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    PDF STH60N10/FI STW60N10 STH60N10 STH60N10FI 100oC 175oC O-247 STW60N10 STH60N10 STH60N10FI

    STW60N10

    Abstract: STH60N10 STH60N10FI
    Text: STH60N10/FI STW60N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH60N10 STH60N10FI STW60N10 • ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 100 V 100 V 100 V < 0.025 Ω < 0.025 Ω < 0.025 Ω 60 A 36 A 60 A TO-247 TYPICAL RDS(on) = 0.02 Ω


    Original
    PDF STH60N10/FI STW60N10 STH60N10 STH60N10FI O-247 100oC 175oC O-218 STW60N10 STH60N10 STH60N10FI

    STH60N10

    Abstract: STH60N10FI STW60N10
    Text: STH60N10/FI STW60N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH60N10 STH60N10FI STW60N10 VDSS R DS on ID 100 V 100 V 100 V < 0.025 Ω < 0.025 Ω < 0.025 Ω 60 A 36 A 60 A TO-247 TYPICAL RDS(on) = 0.02 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original
    PDF STH60N10/FI STW60N10 STH60N10 STH60N10FI O-247 100oC 175oC O-218 STH60N10 STH60N10FI STW60N10

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


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    PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


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    PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    airbag control unit

    Abstract: gc352
    Text: STH60N10 STH60N10FI SGS-THOMSON RÆOOi@[llL[l SÏB ÎMD©i N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TH 60N 10 S TH 60N 10FI V d ss R DS(on Id 100 V 100 V 0.025 Ü 0.025 a 60 A 36 A . . • . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED


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    PDF STH60N10 STH60N10FI O-218 ISOWATT218 STH60N1 airbag control unit gc352

    Untitled

    Abstract: No abstract text available
    Text: _ • G 7 l ^ 2 3 ? D G M S T tiB D 3 Ö ■ S G T H S G S -T H O M S O N i& J O T « ! S T H 6 0 N 10/FI S T W 6 0 N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TH 60N 10 STH60N1OFI STW 60N10 . ■ . . ■ . ■ . V dss R d S { o ii Id


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    PDF 10/FI STH60N1OFI 60N10 7T2T537 04STL STH60N10/FISTW60N10

    TSD45N50V

    Abstract: TSD40N55V TSD33N50V TSD23N50V TSD30N60V TSD180N10V TSD160N05V TSD14N100V TSD4M450V TSD22N80V
    Text: SELECTION GUIDE - BY PACKAGE ISOTOP 4 3 ? V BR DSS (V) R DS(on) ( m ax Id (A) Type (12) gis m in (S) Ciss m ax (pF) 7000 7000 7000 8100 18.0 400 310 8.0 8.0 5.0 9.0 9.0 30.0 40.0 400 500 15.0 28.0 8100 12000 * 45.0 45.0 500 500 350 28.0 28.0 28.0 12000


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    PDF STP30N05 BUZ11A STP25N05 BUZ10 STLT29 BUZ71 IRFZ20 BUZ71A STP17N STLT19 TSD45N50V TSD40N55V TSD33N50V TSD23N50V TSD30N60V TSD180N10V TSD160N05V TSD14N100V TSD4M450V TSD22N80V