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    STH60N10 Price and Stock

    Stelzner (Meters) STH60N10FI

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    Bristol Electronics STH60N10FI 60 2
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    • 1000 $1.68
    • 10000 $1.68
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    Quest Components STH60N10FI 48
    • 1 $4.5
    • 10 $2.25
    • 100 $2.25
    • 1000 $2.25
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    STH60N10 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STH60N10 STMicroelectronics Metal oxide N-channel FET, Enhancement Type Original PDF
    STH60N10 STMicroelectronics N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Original PDF
    STH60N10 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STH60N10 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    STH60N10F1 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    STH60N10/FI STMicroelectronics N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Original PDF
    STH60N10FI STMicroelectronics N-Channel Enhancement Mode Power MOS Transistor Original PDF
    STH60N10FI STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STH60N10FI Toshiba Power MOSFETs Cross Reference Guide Original PDF

    STH60N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STE150N10

    Abstract: STH60N10
    Text: STE150N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE V DSS R DS on ID STE150N10 100 V < 0.009 Ω 150 A 4 • ■ ■ ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY (SEE STH60N10 FOR RATING) VERY LARGE SOA - LARGE PEAK POWER


    Original     		PDF STE150N10 STH60N10 E81743) STE150N10

    STW60N10

    Abstract: STH60N10 STH60N10FI
    Text: STH60N10/FI STW60N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH60N10 STH60N10FI STW60N10 • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V 100 V < 0.025 Ω < 0.025 Ω < 0.025 Ω 60 A 36 A 60 A TYPICAL RDS(on) = 0.02 Ω AVALANCHE RUGGED TECHNOLOGY


    Original     		PDF STH60N10/FI STW60N10 STH60N10 STH60N10FI 100oC 175oC O-247 STW60N10 STH60N10 STH60N10FI

    STE180N10

    Abstract: STH60N10
    Text: STE180N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE V DSS R DS on ID STE180N10 100 V < 0.007 Ω 180 A 4 • ■ ■ ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY (SEE STH60N10 FOR RATING) VERY LARGE SOA - LARGE PEAK POWER


    Original     		PDF STE180N10 STH60N10 E81743) STE180N10

    STW60N10

    Abstract: STH60N10 STH60N10FI
    Text: STH60N10/FI STW60N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH60N10 STH60N10FI STW60N10 • ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 100 V 100 V 100 V < 0.025 Ω < 0.025 Ω < 0.025 Ω 60 A 36 A 60 A TO-247 TYPICAL RDS(on) = 0.02 Ω


    Original     		PDF STH60N10/FI STW60N10 STH60N10 STH60N10FI O-247 100oC 175oC O-218 STW60N10 STH60N10 STH60N10FI

    STH60N10

    Abstract: STH60N10FI STW60N10
    Text: STH60N10/FI STW60N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH60N10 STH60N10FI STW60N10 VDSS R DS on ID 100 V 100 V 100 V < 0.025 Ω < 0.025 Ω < 0.025 Ω 60 A 36 A 60 A TO-247 TYPICAL RDS(on) = 0.02 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF STH60N10/FI STW60N10 STH60N10 STH60N10FI O-247 100oC 175oC O-218 STH60N10 STH60N10FI STW60N10

    schematic diagram dc-ac welding inverter

    Abstract: schematic diagram dc-ac welding inverter CIRCUIT schematic diagram UPS schematic diagram welding inverter schematic diagram dc-ac inverter schematic diagram welding inverter control schematic diagram UPS 600 Power free high current smps circuit diagram BUZ71 application inverter irf840
    Text: BUZ71 BUZ71FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ71 BUZ71FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.1 Ω < 0.1 Ω 18 A 12 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF BUZ71 BUZ71FI 100oC 175oC O-220 ISOWATT220 schematic diagram dc-ac welding inverter schematic diagram dc-ac welding inverter CIRCUIT schematic diagram UPS schematic diagram welding inverter schematic diagram dc-ac inverter schematic diagram welding inverter control schematic diagram UPS 600 Power free high current smps circuit diagram BUZ71 application inverter irf840

    ste30na50

    Abstract: STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20
    Text: SOT-223 VDSS RDS on max (V) (Ω) 30 0.05 0.06 0.12 0.12 0.12 0.27 0.45 1.50 20.0 60 100 200 800 Type STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN3NE06L STN2N10 STN2NE10L ✠ STN1N20 STN1NB80 ✠ ID(cont) DEVICES (A) REPLACED 4.0 4.0 3.0 3.0 3.0 2.0 2.0 1.0


    Original     		PDF OT-223 STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN2N10 STN2NE10L STN1N20 STN1NB80 ste30na50 STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


    Original     		PDF RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    SSH6N80

    Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
    Text: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L


    Original     		PDF BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 SSH6N80 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50

    SSH6N80

    Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
    Text: Power MOSFETs Cross Reference INDUSTY STANDARD 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 SSH6N80 IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent

    airbag control unit

    Abstract: gc352
    Text: STH60N10 STH60N10FI SGS-THOMSON RÆOOi@[llL[l SÏB ÎMD©i N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TH 60N 10 S TH 60N 10FI V d ss R DS(on Id 100 V 100 V 0.025 Ü 0.025 a 60 A 36 A . . • . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED


    OCR Scan     		PDF STH60N10 STH60N10FI O-218 ISOWATT218 STH60N1 airbag control unit gc352

    STE180N10

    Abstract: No abstract text available
    Text: £ j ï SGS-THOMSON S T E 1 8 0 N 10 ULKgraMOeS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYP E V STE180N10 dss 100 V RDS on Id < 0 .0 0 7 Q. 180 A . HIGH CURRENT POWER MODULE . AVALANCHE RUGGED TECHNOLOGY (SEE STH60N10 FOR RATING)


    OCR Scan     		PDF STE180N10 STH60N10 E81743) STE180N10

    TSD45N50V

    Abstract: TSD200N05V TSD40N55V TSD180N10V IRF540 TSD135N10V TSD150N10V TSD4M450V TSD17N100 TSD160N05V
    Text: SELECTION GUIDE BY - PART NUMBER Type V BR DSS (V) ^DS(on) ^ Id max (A) (H) Package iD(max) (A) Ptot (W) Qfs min (S) Ciss max (pF) 850 2000 BUZ10 50 0.080 13.00 TO-220 20.0 85 6.00 BUZ11 BUZ11A BUZ11FI BUZ21 50 0.040 0.055 0.040 0.100 18.00 15.00 18.00 9.00


    OCR Scan     		PDF O-220 TSD45N50V TSD200N05V TSD40N55V TSD180N10V IRF540 TSD135N10V TSD150N10V TSD4M450V TSD17N100 TSD160N05V

    W60N10

    Abstract: H60N10 w60n max6024
    Text: STH60N1OFI STW60N10 SGS-THOMSON N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S T H 60N 10 S T H 60N 1OFI STW 60N 10 . m . . . . . . V dss RDS on Id 100 V 100 V 100 V < 0.025 Ì2 < 0.025 Ì2 < 0.025 Ì2 60 A 36 A 60 A TYPICAL RDS(on) = 0.02 Q. AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		PDF STH60N1OFI STW60N10 O-247 O-218 ISOWATT218 W60N10 H60N10 w60n max6024

    Untitled

    Abstract: No abstract text available
    Text: 7^ 5 3 7 • r z T Ä 7# emb a a s tti m s g t h _ S C S -T H O M S O N l* [í» ^ g « S S T E 1 5 0 N 10 N - CHANNEL ENH ANC EM ENT MODE PO W ER MOS TRA N SISTO R IN ISOTOP PACKAGE TYPE V STE150N10 dss 100 V R D S (o n Id < 0.009 n


    OCR Scan     		PDF STE150N10 STH60N10 E81743)

    Untitled

    Abstract: No abstract text available
    Text: _ • G 7 l ^ 2 3 ? D G M S T tiB D 3 Ö ■ S G T H S G S -T H O M S O N i& J O T « ! S T H 6 0 N 10/FI S T W 6 0 N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TH 60N 10 STH60N1OFI STW 60N10 . ■ . . ■ . ■ . V dss R d S { o ii Id


    OCR Scan     		PDF 10/FI STH60N1OFI 60N10 7T2T537 04STL STH60N10/FISTW60N10

    TSD45N50V

    Abstract: TSD40N55V TSD33N50V TSD23N50V TSD30N60V TSD180N10V TSD160N05V TSD14N100V TSD4M450V TSD22N80V
    Text: SELECTION GUIDE - BY PACKAGE ISOTOP 4 3 ? V BR DSS (V) R DS(on) ( m ax Id (A) Type (12) gis m in (S) Ciss m ax (pF) 7000 7000 7000 8100 18.0 400 310 8.0 8.0 5.0 9.0 9.0 30.0 40.0 400 500 15.0 28.0 8100 12000 * 45.0 45.0 500 500 350 28.0 28.0 28.0 12000


    OCR Scan     		PDF STP30N05 BUZ11A STP25N05 BUZ10 STLT29 BUZ71 IRFZ20 BUZ71A STP17N STLT19 TSD45N50V TSD40N55V TSD33N50V TSD23N50V TSD30N60V TSD180N10V TSD160N05V TSD14N100V TSD4M450V TSD22N80V