Date Code Marking STMicroelectronics
Abstract: STMicroelectronics DIODE marking code STMicroelectronics marking code date STMicroelectronics marking code date diode LDP24AS Date Code Marking STMicroelectronics diode
Text: LDP24AS TRANSIL LOAD DUMP PROTECTION FEATURES TRANSIENT VOLTAGE SUPPRESSOR DIODE ESPECIALLY DESIGNED FOR LOAD DUMP EFFECT PROTECTION HIGH SURGE CURRENT CAPABILITY : 40 A / 40 ms EXPONENTIAL WAVE COMPLIANT WITH MAIN STANDARDS SUCH AS: -ISO / DTR 7637 DESCRIPTION
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LDP24AS
Date Code Marking STMicroelectronics
STMicroelectronics DIODE marking code
STMicroelectronics marking code date
STMicroelectronics marking code date diode
LDP24AS
Date Code Marking STMicroelectronics diode
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Untitled
Abstract: No abstract text available
Text: STPS15L30CDJF Low drop power Schottky rectifier Features • Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low forward voltage drop ■ Low thermal resistance ■ High avalanche capability specified A1 K A2 Description
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STPS15L30CDJF
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L30C
Abstract: No abstract text available
Text: STPS15L30CDJF Low drop power Schottky rectifier Features • Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low forward voltage drop ■ Low thermal resistance ■ High avalanche capability specified A1 K A2 Description
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STPS15L30CDJF
STPS15L30CDJF
L30C
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Schaffner NSG 500 c
Abstract: Schaffner NSG
Text: LDP24A TRANSIENT VOLTAGE SUPRESSORS FEATURES HIGH SURGE CAPABILITY : 40 A / 40 ms exponential wave TRANSIENT VOLTAGE SUPPRESSOR DIODE ESPECIALLY DESIGNED FOR LOAD DUMP EFFECT PROTECTION COMPLIANT WITH MAIN STANDARDS SUCH AS: ISO / DTR 7637 DESCRIPTION Transient voltage suppressor diodes especially
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LDP24A
Schaffner NSG 500 c
Schaffner NSG
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Untitled
Abstract: No abstract text available
Text: STS4NF100 N-channel 100 V, 0.065 Ω typ., 4 A STripFET II Power MOSFET in SO-8 package Datasheet − production data Features Order code VDS RDS on max ID STS4NF100 100 V 0.070 Ω 4A • Exceptional dv/dt capability ■ 100 % avalanche tested ■ Application oriented characterization
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STS4NF100
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diode smd marking Z2
Abstract: diode Z2 018 SMD MARKING CODE Z2 diode marking z2 marking code z2 esdaxlc6
Text: ESDAXLC6-1BU2 Single-line bidirectional ESD protection for high speed interface Datasheet preliminary data Features • Bidirectional device ■ Extra low diode capacitance: 0.4 pF ■ Low leakage current ■ 0201 SMD package size compatible ■ Ultra small PCB area: 0.18 mm2
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ST0201
diode smd marking Z2
diode Z2 018
SMD MARKING CODE Z2
diode marking z2
marking code z2
esdaxlc6
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Untitled
Abstract: No abstract text available
Text: ESDAXLC6-1BU2K Single-line bidirectional ESD protection for high speed interface Datasheet - production data Features • Bidirectional device • Extra low diode capacitance: 0.25 pF • Low leakage current • 0201 SMD package size compatible • Ultra small PCB area: 0.18 mm2
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DocID024128
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Untitled
Abstract: No abstract text available
Text: STP40NF10 N-channel 100 V, 0.025 Ω, 50 A TO-220 low gate charge STripFET II Power MOSFET Features Order code VDSS RDS on max. ID STP40NF10 100 V < 0.028 Ω 50 A • Exceptional dv/dt capability ■ Low gate charge ■ 100% avalanche tested 1 2 3 TO-220
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STP40NF10
O-220
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3NF06L
Abstract: JESD97 STN3NF06L
Text: STN3NF06L N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET Features Type VDSS @Tjmax RDS(on) max ID STN3NF06L 60 V < 0.1 Ω 4A • Exceptional dv/dt capability ■ Avalanche rugged technology ■ 100% avalanche tested ■ Low threshold drive
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STN3NF06L
OT-223
3NF06L
JESD97
STN3NF06L
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P40NF10
Abstract: STP40NF10 d1 marking code dpak transistor p40nf S2180
Text: STP40NF10 N-channel 100 V, 0.025 Ω, 50 A TO-220 low gate charge STripFET II Power MOSFET Features Order code VDSS RDS on max. ID STP40NF10 100 V < 0.028 Ω 50 A • Exceptional dv/dt capability ■ Low gate charge ■ 100% avalanche tested 3 1 2 TO-220
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STP40NF10
O-220
P40NF10
STP40NF10
d1 marking code dpak transistor
p40nf
S2180
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PowerFLAT
Abstract: STPS15-L30CDJF STPS15 STPS15L30CDJF powerflat 5x6 STPS15L30
Text: STPS15L30CDJF Low drop power Schottky rectifier Features • Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low forward voltage drop ■ Low thermal resistance ■ High avalanche capability specified ■ ECOPACK 2 compliant component
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STPS15L30CDJF
PowerFLAT
STPS15-L30CDJF
STPS15
STPS15L30CDJF
powerflat 5x6
STPS15L30
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STD40NF10
Abstract: D40NF
Text: STD40NF10 N-channel 100 V, 0.025 Ω, 50 A DPAK low gate charge STripFET II Power MOSFET Features Order code VDSS RDS on max. ID STD40NF10 100 V < 0.028 Ω 50 A • Exceptional dv/dt capability ■ Low gate charge ■ 100% avalanche tested 3 1 DPAK Application
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STD40NF10
STD40NF10
D40NF
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45NF06
Abstract: No abstract text available
Text: STP45NF06 N-channel 60 V, 0.22 Ω typ., 38 A, STripFET II Power MOSFET in a TO-220 package Datasheet − production data Features • Order code VDS RDS on ID STP45NF06 60 V 0.028 Ω 38 A TAB Typical RDS(on) = 0.022 Ω ■ Exceptional dv/dt capability
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STP45NF06
O-220
O-220
45NF06
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DALC12
Abstract: marking code stmicroelectronics STMicroelectronics DIODE marking code STMicroelectronics Marking CODE marking code so8 stmicroelectronics MARKING SO8 DALC112S1 DALC112S1RL
Text: DALC112S1 Application Specific Discretes A.S.D.TM LOW CAPACITANCE DIODE ARRAY FOR ESD PROTECTION MAIN APPLICATIONS Where ESD protection for high speed datalines is required : LAN / WAN equipment Computer I/O Graphic video port Set top box I/O SO8 DESCRIPTION
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DALC112S1
DALC12
marking code stmicroelectronics
STMicroelectronics DIODE marking code
STMicroelectronics Marking CODE
marking code so8 stmicroelectronics
MARKING SO8
DALC112S1
DALC112S1RL
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STS3N95K3
Abstract: No abstract text available
Text: STS3N95K3 N-channel 950 V, 5 Ω, 0.4 A SO-8 Zener-protected SuperMESH3 Power MOSFET Preliminary data Features Order code VDSS RDS on max ID Pw STS3N95K3 950 V < 6.3 Ω 0.4 A 2W • 100% avalanche tested ■ Extremely large avalanche performance ■ Gate charge minimized
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STS3N95K3
STS3N95K3
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Untitled
Abstract: No abstract text available
Text: ESDAXLC6-1BT2 Single-line bidirectional ESD protection for high speed interface Datasheet production data Features • Bidirectional device ■ Multiple ESD strike sustainability ■ Extra low diode capacitance: 0.4 pF ■ Low leakage current ■ Thin SOD882 package - 0402 size compatible
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OD882
OD882T
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Untitled
Abstract: No abstract text available
Text: ESDAXLC6-1BU2 Single-line bidirectional ESD protection for high speed interface Datasheet - production data Features • Bidirectional device • Extra low diode capacitance: 0.4 pF • Low leakage current • 0201 SMD package size compatible • Ultra small PCB area: 0.18 mm2
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DocID023702
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diode UF 3010
Abstract: 140NF20D STE140NF20D STripFET
Text: STE140NF20D N-channel 200 V, 0.010 Ω, 140 A, ISOTOP STripFET II with fast recovery diode Power MOSFET Preliminary Data Features Type VDSS RDS on max ID STE140NF20D 200 V < 0.012 Ω 140 A • Exceptional dv/dt capability ■ Low gate charge ■ 100% avalanche tested
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STE140NF20D
STE140NF20D
diode UF 3010
140NF20D
STripFET
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130NF20D
Abstract: STY130NF20D VDD480
Text: STY130NF20D N-channel 200 V, 0.010 Ω, 130 A, Max247 STripFET II with fast recovery diode Power MOSFET Preliminary Data Features Type VDSS RDS on max ID STY130NF20D 200 V < 0.012 Ω 130 A • Exceptional dv/dt capability ■ 100% avalanche tested Application
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STY130NF20D
Max247
STY130NF20D
130NF20D
VDD480
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marking code stmicroelectronics
Abstract: STMicroelectronics DIODE marking code STMicroelectronics Marking CODE IEC1000-4-2 diode marking code cz EMIF01 EMIF01-5250SC5 NSG435 SC-59A IEC-1000-4-2
Text: EMIF01-5250SC5 EMI FILTER WITH ESD PROTECTION Application Specific Discretes A.S.D.TM MAIN APPLICATIONS Where EMI filtering in ESD sensitive equipment is required : Mobile phone : handsets and accessories RF communications DESCRIPTION The EMIF01-5250SC5is a highly integrated T-filter
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EMIF01-5250SC5
EMIF01-5250SC5is
EMIF01-5250SC5
OT23-5L
SC-59A)
marking code stmicroelectronics
STMicroelectronics DIODE marking code
STMicroelectronics Marking CODE
IEC1000-4-2
diode marking code cz
EMIF01
NSG435
SC-59A
IEC-1000-4-2
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W20NK50
Abstract: w20nk50z W20NK50Z ST STW20NK50Z ST W20NK STW20NK50Z
Text: STW20NK50Z N-channel 500 V, 0.23 Ω, 20 A SuperMESH Power MOSFET Zener-protected in TO-247 package Datasheet — production data Features Order code VDSS RDS on max STW20NK50Z 500 V < 0.27 Ω • Extremely high dv/dt capability ■ 100% avalanche tested
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STW20NK50Z
O-247
STW20NK50Z
O-247
W20NK50
w20nk50z
W20NK50Z ST
STW20NK50Z ST
W20NK
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f10nk50z
Abstract: f10nk f10nk50 STF10NK F10N STF10NK50Z
Text: STF10NK50Z N-channel 500 V, 0.55 Ω, 9 A Zener-protected SuperMESH Power MOSFET in TO-220FP package Datasheet — production data Features Order code VDSS RDS on max ID PTOT STF10NK50Z 500 V < 0.7 Ω 9A 30 W • Extremely high dv/dt capability ■ 100% avalanche tested
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STF10NK50Z
O-220FP
O-220FP
f10nk50z
f10nk
f10nk50
STF10NK
F10N
STF10NK50Z
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d25nf
Abstract: d25nf10l D25NF10LA d25nf10
Text: STD25NF10LA N-channel 100 V, 0.030 Ω, 25 A DPAK STripFET II Power MOSFET Features Order code VDSS RDS on max ID STD25NF10LA 100 V < 0.035 Ω 25 A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Logic level device TAB 3 1 DPAK Applications
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STD25NF10LA
d25nf
d25nf10l
D25NF10LA
d25nf10
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Untitled
Abstract: No abstract text available
Text: LDP24AS TRANSIL LOAD DUMP PROTECTION FEATURES • TRANSIENT VOLTAGE SUPPRESSOR DIODE ESPECIALLY DESIGNED FOR LOAD DUMP EFFECT PROTECTION ■ HIGH SURGE CURRENT CAPABILITY: 40 A / 40 ms EXPONENTIAL WAVE ■ COMPLIANT WITH MAIN STANDARDS SUCH AS: -IS O /D T R 7637
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OCR Scan
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LDP24AS
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