strs 20
Abstract: str+s+6309
Text: MADE IN USA .315" 8 mm DIAMETER ROUND CROSS-SECTION SINGLE-END TERMINAL Style STRS ߜ Steel Sheath ߜ 150 - 2,050 Watts ߜ 120 and 240 Volt ߜ 4 - 20 W/In2 ߜ 750°F (400° C) Max. Sheath Temperature Dimensions 10 (25) 0.315" (8mm) Dia. Steel Sheath 1/2
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confine-0612/450W/240V
FSRM-1212/550W/480V
FSRM-1212/225W/240V
FSRM-1212/900W/480V
FSRM-1218/650W/480V
FSRM-1218/1300W/240V
FSRM-1818/225W/240V
FSRM-1224/875W/480V
FSRM-1224/1750W/480V
strs 20
str+s+6309
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strs 20
Abstract: IOT7210 03v0-c
Text: Electrical Characteristics Absolute Maximum Ratings Exposing the device to stresses above those listed here could cause permanent damage to the IOT7210. The device is not meant to be operated under conditions outside the limits described in this specification. Exposure to absolute maximum
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IOT7210.
strs 20
IOT7210
03v0-c
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Untitled
Abstract: No abstract text available
Text: I 4 • 3 0 -$- -E3- C'oI 'ri . -l IDRG No. CP40347 THIS DRAWING AND THE COPYRIGHT AND DESIGN RIGHT THEREIN ARE THE PROPERlY OF OXlEY DEVELOPMENTS CO. Ltd. AND MUST NOT BE REPRODUCED OR DISCLOSED TO A THIRD PARlY WITHOUT PRIOR WRITTEN CONSENT OF THE COMPANY.
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CP40347
JL055
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IOT7210P
Abstract: IOT7210T IOT7210 SN75161 PD7210 SN75160 6D120 strs 20 MC3448AX4 03v0-c
Text: IOT7210 Low-Power CMOS IEEE 488 Controller Device NEW Features • Completely meets IEEE Standard 488-1978: - SH1, source handshake - AH1, acceptor handshake - T5 or TE5, talker or extended talker - L3 or LE3, listener or extended listener - SR1, service request
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IOT7210
40-pin
44-pin
IOT7210P
IOT7210T
IOT7210P
IOT7210T
IOT7210
SN75161
PD7210
SN75160
6D120
strs 20
MC3448AX4
03v0-c
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Power IC
Abstract: No abstract text available
Text: Custom IC • Various processing technologies of BIP, BiCMOS, CMOS and BCD can be used for the semiconductor chips. ■ Meets detailed user needs, especially power ICs. A wide range of general-purpose ICs is also available. ■ Employs a monolithic chip with flip-chip construction for increased reliability making it ideal for car electronic
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MT-100
FM205
10pin
SMA12pin
SMA15pin
SLA12pin
SLA15pin
SLA18pin
SMD16pin
SPF16pin
Power IC
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Power IC
Abstract: No abstract text available
Text: Custom IC • Various processing technologies of BIP, BiCMOS, CMOS and BCD can be used for the semiconductor chips. ■ Meets detailed user needs, especially power ICs. A wide range of general-purpose ICs is also available. ■ Employs a monolithic chip with flip-chip construction for increased reliability making it ideal for car electronic
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FM205
10pin
SMA12pin
SMA15pin
SLA12pin
SLA15pin
SLA18pin
SMD16pin
SPF16pin
SPF20pin
Power IC
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STRS60
Abstract: No abstract text available
Text: MADE IN USA .315" 8 mm DIAMETER ROUND CROSS-SECTION SINGLE-END TERMINAL Style STRI ߜ INCOLOY Sheath ߜ 225 - 2,400 Watts ߜ 120 and 240 Volt ߜ 4 - 30 W/In2 ߜ 1600°F (870° C) Maximum Sheath Temperature Dimensions 10 (25) 0.315" (8 mm) dia. INCOLOY Sheath
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FEATU40
STRS-7248/120
STRS-7248/240
STRS-8448/120
STRS-8448/240
STRS-9648/120
STRS-9648/240
STRS-10848/120
STRS-10848/240
STRS-12048/120
STRS60
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strs 20
Abstract: NE522 0405B NE522D NE522N
Text: Philips Semiconductors Linear Products Product specification High-speed dual-differential comparator/sense amp FEATURES NE522 PIN CONFIGURATION • 15ns maximum guaranteed propagation delay • 20µA maximum input bias current • TTL-compatible strobes and outputs
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NE522
strs 20
NE522
0405B
NE522D
NE522N
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BC 177 transistor
Abstract: TRANSISTOR BC 384 MJ16110 transistor a013 MJH16110 AM603 AM503 MJ16010 MUR870 P6302
Text: MOTOROLA SC I X STRS/R F 1 EE 0 I MOTOROLA b3L7E5M D0flSLb4 ^ I T - 3 3 -1 3 Order this data sheet by MJ16110/D SEMICONDUCTOR TECHNICAL DATA M J16110 MJH16110 Designer's Data Sheet IMPN Silico n Pow er Transistors Switchmode III Bridge Series POWER TRANSISTORS
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MJ16110/D
MK145BP,
C60416
MJ16110
MJH16110
BC 177 transistor
TRANSISTOR BC 384
MJ16110
transistor a013
AM603
AM503
MJ16010
MUR870
P6302
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BUZ-10L
Abstract: mtp23n BUZ10L
Text: MOTOROLA SC X STRS/R F 2bE D b3b72SM OGICHDG 1 O rder this d ata sheet by B U Z 10U D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUZ10L M TP23N 05L Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate These T M O S Power FETs are designed for high speed,
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b3b72SM
BUZ10L
TP23N
BUZ10L
C65M6
BUZ-10L
mtp23n
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MJ75BX100
Abstract: No abstract text available
Text: 6 3 6 7 2 54 MOTOROLA MOTOROL A ^ SC X STRS/R F D F|b3b7ES4 D T # -3 5 9 6D 8 1 4 8 7 Order this data sheet by MJ75BX100/D 0DÖ14Ö7 4 f SEMICONDUCTOR TECHNICAL DATA MJ75 B X 100 NPN Silico n Pow er Transisto r Module Energy M anagement S eries DUAL TRI-STAGE
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PDF
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MJ75BX100/D
MK145BP,
MJ75BX100
BS-3766
MJ75BX100
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MJ150BX100
Abstract: DD81S
Text: 6367254 MOTOROLA SC X STRS/R MOTOROLA ^ F 96D 8 1 5 0 3 I)"I SEMICONDUCTOR D J -5 3 '% > DD81SD3 1 | a B B B S B B B B TECHNICAL DATA MJ150BX100 N P N S ilic o n P o w e r T ra n s is to r M o d u le Energy M anagem ent Series These power transistors are designed for industrial service under practical operating
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DD81SD3
BX100
MK145BP,
J150B
21276-L
MJ150BX100
DD81S
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ST90T27B6
Abstract: ST90T27 ST90E27 CDIP40-W st90t28b SGS microcontroller 33WH CLCC44-W
Text: SGS-THOMSON HD E^ IILICÎ^(â IKlDei 16 K EPROM ST90E27/T27 ST90E28/T28 HCMOS MCUs WITH RAM • Register oriented 8/16 bit CORE with RUN, WFI and HALT modes ■ Minimum instruction cycle time: 500ns (12MHz internal) ■ Internal M em ory: EPROM 16Kbytes RAM
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ST90E27/T27
ST90E28/T28
500ns
12MHz
256bytes
40-lead
ST90T27.
ST90E27.
44-lead
ST90T27B6
ST90T27
ST90E27
CDIP40-W
st90t28b
SGS microcontroller
33WH
CLCC44-W
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON HD E[fil IILICÎ^(â IKlDSl ST9040 16K ROM HCMOS MCU WITH EEPROM, RAM AND A/D CONVERTER • Register oriented 8/16 bit CORE with RUN, WFI and HALT modes ■ Minimum instruction cycle time : 500ns (12MHz internal) ■ Internal Memory : ROM 16K bytes
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ST9040
500ns
12MHz
80-pin
ST9040Q
68-lead
ST9040C
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|
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QMA INVERTER
Abstract: HLX quartz ST6398 EPROM 27256 programmer schematic ST9027 ST9028 ST90R28 SGS M74HC04 tda 835 cj CLCC44-W
Text: SGS-THOMSON [M œ [lL iû r a M O i S T 9 0 2 7 , S T 9 0 2 8 16K ROM / 256 RAM HCMOS MCUs • Register oriented 8/16 bit CORE with RUN, WFI and HALT modes ■ Minimum instruction cycle time : 500ns (12MHz internal ■ Internal Memory : ROM RAM ST9027
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ST9027,
ST9028
500ns
12MHz
ST9027
ST9028
40-pin
ST9027
44-lead
ST9028C
QMA INVERTER
HLX quartz
ST6398
EPROM 27256 programmer schematic
ST90R28
SGS M74HC04
tda 835 cj
CLCC44-W
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ST6398
Abstract: HLX quartz hlx crystal QMA INVERTER setting data hlx 12Mhz crystal oscillator RG61 SGS M74HC04 sda 20560 hlx* crystal QMA INVERTER
Text: SGS-THOMSON [M œ [lL iû r a M O i S T 9 0 2 7 , S T 9 0 2 8 16K ROM / 256 RAM HCMOS MCUs • Register oriented 8/16 bit CORE with RUN, WFI and HALT modes ■ Minimum instruction cycle time : 500ns (12MHz internal ■ Internal Memory : ROM RAM ST9027
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ST9027,
ST9028
500ns
12MHz
ST9027
ST9028
40-pin
ST9027
44-lead
ST9028C
ST6398
HLX quartz
hlx crystal
QMA INVERTER setting data
hlx 12Mhz crystal oscillator
RG61
SGS M74HC04
sda 20560
hlx* crystal
QMA INVERTER
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st90r50
Abstract: No abstract text available
Text: SGS-THOMSON [ M œ [ lL iû r a M O i S T 9 0 R 5 0 ROMLESS HCMOS MCU WITH BANKSWITCH AND A/D CONVERTER PRELIMINARY DATA • Register oriented 8/16 bit CORE with RUN, WFI and HALT modes ■ Minimum instruction cycle time : 500ns (12MHz internal ■ 224 general purpose registers available as RAM,
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500ns
12MHz
16Mbytes
84-pin
ST90R50C)
80-pin
ST90R50Q)
st90r50
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ST90T36C6
Abstract: ST9036C ST9036C1 microcontroller ST9036 lc 76 adg hs6 marking TC 4863 ZCPL1 equivalent for tda 4863 ic ST9030
Text: SGS-THOMSON [ M œ [ lL iû r a M O i S T 9 0 3 6 16K ROM / 256 RAM HCMOS MCU WITH RAM AND A/D CONVERTER • Register oriented 8/16 bit CORE with RUN, WFI and HALT modes ■ Minimum instruction cycle time : 500ns (12MHz internal ■ Internal M em ory:
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PDF
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500ns
12MHz
80-pin
ST9036Q
68-lead
ST9036C
ST90T36
68-Pin
VR001534
ST90T36C6
ST90T36C6
ST9036C
ST9036C1
microcontroller ST9036
lc 76 adg
hs6 marking
TC 4863
ZCPL1
equivalent for tda 4863 ic
ST9030
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ST90R28
Abstract: No abstract text available
Text: SGS-THOMSON HD E[fil IILICÎ^(â IKlDSl ST90R28 ROMLESS HCMOS MCU WITH RAM • Register oriented 8/16 bit CORE with RUN, WFI and HALT modes ■ Minimum instruction cycle time:500ns (12MHz internal) ■ ROMIess to allow maximum external memory flexibility
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PDF
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ST90R28
500ns
12MHz
56-pin
VR01996C
ST90R28B1
24MHz
PSDIP56
ST90R28
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors-Signetics Linear Products High-speed dual-differential comparator/sense amp FEATURES APPLICATIONS • 15ns maximum guaranteed propagation delay • A-to-D conversion • 20 iA maximum input bias current NE522 PIN CONFIGURATION
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NE522
14-Pin
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0405B
Abstract: NE522 NE522D NE522N TI-03 VV510
Text: Product specification Philips Semiconductors Linear Products High-speed dual-differential comparator/sense amp NE522 PIN CONFIGURATION FEATURES • 15ns maximum guaranteed propagation delay D ,N Packages • 20nA maximum input bias current w • TTL-compatible strobes and outputs
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NE522
711002b
0405B
NE522D
NE522N
TI-03
VV510
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NE522
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Linear Products High-speed dual-differential comparator/sense amp FEATURES NE522 PIN CONFIGURATION • 15ns maximum guaranteed propagation delay D ,N Packages _ w _ • 20nA maximum input bias current • TTL-compatible strobes and outputs
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PDF
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NE522
14-Pin
10MHz
711002b
007flbb5
711052b
NE522
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TRANSISTOR PHL 25 amp
Abstract: 0405B NE522 NE522D NE522N I2111
Text: P roduct specification P hilips S em iconductors Linear Products High-speed dual-differential comparator/sense amp NE522 PIN CONFIGURATION FEATURES • 15ns maximum guaranteed propagation delay D, N Packages • 20nA maximum input bias current • TTL-compatible strobes and outputs
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OCR Scan
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PDF
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NE522
14-Pin
TRANSISTOR PHL 25 amp
0405B
NE522
NE522D
NE522N
I2111
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Untitled
Abstract: No abstract text available
Text: 01ZA8.2 TO SHIBA TOSHIBA DIODES FOR PROTECTING AGAINST ESD EPITAXIAL PLANAR TYPE 0 1 Z A 8 .2 Unit in mm DIODES FOR PROTECTING AGAINST ESD 1.6 ± 0.1 Because two devices are mounted on an ultra compact package, it is possible to allow reducing the number of the
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01ZA8
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