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    STRUCTURE MEMS IC Search Results

    STRUCTURE MEMS IC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    STRUCTURE MEMS IC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: White Paper: RF MEMS Switch: What You Need to Know Structure and Usage of OMRON MEMS Switch 2SMES-01 MEMS RF Switch Type: 2SMES-01 White Paper: 2SMES-01 MEMS RF Switch 1 Outline In this application note, the basic operation principle and driving method for OMRON’s MEMS switch


    Original     		PDF 2SMES-01 2SMES-01 2SMES-01)

    SSH-003T-P0.2

    Abstract: AGW28 "Flow Sensor" SM03B-SRSS-TB 03SR-3S JST 03SR-3S sm03b gas oil sensor MEMS MEMS flow sensor AWG32
    Text: MEMS Flow Sensor D6F-03A3 Includes an MEMS Flow Element. High-accuracy Sensing Even for Shiny Bodies. • The industry's thinnest and lightest flow sensor See note. , with a MEMS flow chip. ■ Unique flow path structure provides high precision and fast response.


    Original     		PDF D6F-03A3 D6F-03A3-000 SSH-003T-P0 SHR-03V-03 A181-E1-01 77-587-7486/Fax: SSH-003T-P0.2 AGW28 "Flow Sensor" SM03B-SRSS-TB 03SR-3S JST 03SR-3S sm03b gas oil sensor MEMS MEMS flow sensor AWG32

    Untitled

    Abstract: No abstract text available
    Text: D6F-W MEMS Flow Rate Sensor A Compact Sensor That Uses OMRON’s Unique Flow Path Structure for High-performance Flow Rate Measurement. • Anti-dust performance enhanced by OMRON’s unique three-dimensional flow path structure. • High accuracy of ±5% FS.


    Original     		PDF D6F-W01A1 D6F-W04A1 D6F-W10A1 A184-E1-02

    "Flow Sensor"

    Abstract: d6F-P0010A1 03SR-3S D6F-P0001A mems pressure sensor structure D6F-P0010A2 particulate matter sensor XG8V-0344 mass air flow sensor
    Text: MEMS Mass Flow Sensor D6F-P A Compact, High-performance Flow Sensor with Dust Segregation Structure. • Built in Dust Segregation System DSS with cyclone flow structure, diverts particulates from sensor element. • High resolution and repeatability, even at low flow rates.


    Original     		PDF X305-E-1 "Flow Sensor" d6F-P0010A1 03SR-3S D6F-P0001A mems pressure sensor structure D6F-P0010A2 particulate matter sensor XG8V-0344 mass air flow sensor

    S3B-ZR-SM2-TF

    Abstract: SZH-002T SZH-002T-P SZH-002T-P0 D6F-W CABLE D6F-W04A1 S3B-ZR SZH-003T-P w01a AWG28
    Text: MEMS Flow Rate Sensor D6F-W@A1 A Compact Sensor That Uses OMRON’s Unique Flow Path Structure for Highperformance Flow Rate Measurement. • Anti-dust performance enhanced by OMRON's unique three-dimensional flow path structure. ■ High accuracy of ±5% FS.


    Original     		PDF D6F-W01A1 D6F-W04A1 SZH-002T-P0 A184-E1-01 77-587-7486/Fax: S3B-ZR-SM2-TF SZH-002T SZH-002T-P D6F-W CABLE D6F-W04A1 S3B-ZR SZH-003T-P w01a AWG28

    Untitled

    Abstract: No abstract text available
    Text: MEMS Mass Flow Sensor D6F-P A Compact, High-performance Flow Sensor with Dust Segregation Structure. • Built in Dust Segregation System DSS with cyclone flow structure, diverts particulates from sensor element. • High resolution and repeatability, even at low flow rates.


    Original     		PDF X305-E-1a

    D6F-W

    Abstract: Omron
    Text: D6F-W MEMS Flow Rate Sensor A Compact Sensor That Uses OMRON’s Unique Flow Path Structure for High-performance Flow Rate Measurement. • Anti-dust performance enhanced by OMRON’s unique three-dimensional flow path structure. • High accuracy of ±5% FS.


    Original     		PDF D6F-W01A1 D6F-W10A1 D6F-W04A1 A184-E1-02 D6F-W Omron

    bias stability gyro mems

    Abstract: No abstract text available
    Text: CRH02 Technical Datasheet Analogue Angular Rate Sensor High Performance MEMS Gyroscope www.siliconsensing.com Sensing Axis Features 1 General Description • Proven and Robust silicon MEMS VSG3Q vibrating ring structure • Four rate ranges available: ±25°/s, ±100°/s, ±200°/s


    Original     		PDF CRH02 CRH02-00-0100-132 bias stability gyro mems

    velocity sensor

    Abstract: "Velocity Sensor" gas oil sensor MEMS D6F-V03A1 dehumidifier velocity sensors tunnel sensor MEMS humidity sensor resistance 10k SH-003T-P0
    Text: MEMS Air Velocity Sensor D6F-V03A1 Unique dust separating structure, developed by OMRON, in a compact and highly efficient FLOW-SENSOR. • Unique dust segregation structure. • +/-10% Full-Scale repeatable accuracy achieves consistent air velocity measurement, in a cost efficient package.


    Original     		PDF D6F-V03A1 X305-E-1 velocity sensor "Velocity Sensor" gas oil sensor MEMS D6F-V03A1 dehumidifier velocity sensors tunnel sensor MEMS humidity sensor resistance 10k SH-003T-P0

    S12028

    Abstract: No abstract text available
    Text: IR-enhanced Si PIN photodiode S12028 Enhanced near IR sensitivity, using a MEMS techonology The S12028 is Si PIN photodiode that offers enhanced near infrared sensitivity due to a MEMS structure formed on the backside of the photodiode. The S12028 offers significantly higher sensitivity than our previous product S5821 .


    Original     		PDF S12028 S12028 S5821) KPIN1083E01

    Untitled

    Abstract: No abstract text available
    Text: IR-enhanced Si APD S11519 series Enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11519 series are a family of Si APDs with improved sensitivity in the near infrared region.


    Original     		PDF S11519 S8890 SE-171 KAPD1028E01

    1NA101

    Abstract: S8890 APD S11519
    Text: IR-enhanced Si APD S11519 series Enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11519 series are a family of Si APDs with improved sensitivity in the near infrared region.


    Original     		PDF S11519 S8890 SE-171 KAPD1028E01 1NA101 APD S11519

    Untitled

    Abstract: No abstract text available
    Text: IR-enhanced Si PIN photodiodes S11499 series Large area, enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11499 series is a family of Si PIN photodiodes with drastically


    Original     		PDF S11499 S11499-01) KPIN1082E02

    "Air Flow Sensor"

    Abstract: S3B-ZR-SM2-TF S3B-ZR D6F-W01A1 D6F-W04A1 SZH-002T-P0 SZH-003T-P0 SZH-003T-P air flow sensor
    Text: MEMS Air Flow Sensor D6F-W The unique dust separating structure, developed by Omron, is a compact and highly efficient Flow-Sensor. NEW • Dust resistant design prevents contamination in an efficient flow-sensor. • ±5% Full-Scale repeatable accuracy achieves reliable air


    Original     		PDF D6F-W01A1 D6F-W04A1 J01C-E-01 "Air Flow Sensor" S3B-ZR-SM2-TF S3B-ZR D6F-W01A1 D6F-W04A1 SZH-002T-P0 SZH-003T-P0 SZH-003T-P air flow sensor

    D6F marking

    Abstract: d6f-p D6F-0010A1 0010A1 cpap D6F-P0010A1 gas oil sensor MEMS medical Flow Sensor MEMS, 0-1 LPM terminal ring jst
    Text: MEMS Flow Sensor D6F-P A Compact, High-performance Flow Sensor with Dust Segregation Structure. • Built in Dust Segregation System DSS . ■ High resolution and repeatability, even at low flow rates. ■ Barbed ports with connector or PCB terminals or manifold mount with connector versions.


    Original     		PDF D6F-P0010A1 D6F-P0010A2 A0037G) A183-E1-02 77-588-9200/Fax: D6F marking d6f-p D6F-0010A1 0010A1 cpap D6F-P0010A1 gas oil sensor MEMS medical Flow Sensor MEMS, 0-1 LPM terminal ring jst

    Photodiodes

    Abstract: yag Electrical circuit S11499 TO-8 Package
    Text: IR-enhanced Si PIN photodiodes S11499 series Large area, enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11499 series is a family of Si PIN photodiodes with drastically improved sensitivity in the near infrared region at wavelengths longer than 900 nm. Compared to our conventional product, the S11499 series has


    Original     		PDF S11499 S11499-01) SE-171 KPIN1082E01 Photodiodes yag Electrical circuit TO-8 Package

    Untitled

    Abstract: No abstract text available
    Text: IR-enhanced Si PIN photodiodes S11499 series Large area, enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11499 series is a family of Si PIN photodiodes with drastically improved sensitivity in the near infrared region at wavelengths longer than 900 nm. Compared to our conventional product, the S11499 series has


    Original     		PDF S11499 S11499-01) SE-171 KPIN1082E01

    Untitled

    Abstract: No abstract text available
    Text: I R-enhanced Si PI N photodiodes S11499 series Large area, enhanced near I R sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11499 series is a family of Si PIN photodiodes with drastically improved sensitivity in the near infrared region at wavelengths longer than 900 nm. Compared to our conventional product, the S11499 series has


    Original     		PDF S11499 SE-171 KPIN1082E01

    Untitled

    Abstract: No abstract text available
    Text: IR-enhanced CCD area image sensor S11500-1007 Enhanced near infrared sensitivity: QE=40% λ=1000 nm , back-thinned FFT-CCD The S11500-1007 is an FFT-CCD image sensor for photometric applications that offers improved sensitivity in the near infrared region at wavelengths longer than 800 nm. Our unique technology in laser processing was used to form a MEMS structure on


    Original     		PDF S11500-1007 S11500-1007 S7030-1007) KMPD1125E05

    CCD area sensor 2.2 black white

    Abstract: mems Infrared light source
    Text: IR-enhanced CCD area image sensor S11500-1007 Enhanced near infrared sensitivity: QE=40% λ=1000 nm , back-thinned FFT-CCD The S11500-1007 is an FFT-CCD image sensor for photometric applications that offers improved sensitivity in the near infrared region at wavelengths longer than 800 nm. Our unique technology in laser processing was used to form a MEMS structure on


    Original     		PDF S11500-1007 S11500-1007 S7030-1007) KMPD1125E05 CCD area sensor 2.2 black white mems Infrared light source

    S11500-1007

    Abstract: CCD area sensor 2.2 black white
    Text: IR-enhanced CCD area image sensor S11500-1007 Enhanced near infrared sensitivity: QE=40% λ=1000 nm , back-thinned FFT-CCD The S11500-1007 is an FFT-CCD image sensor for photometric applications that offers improved sensitivity in the near infrared region at wavelengths longer than 800 nm. Our unique technology in laser processing was used to form a MEMS structure on the


    Original     		PDF S11500-1007 S11500-1007 S7030-1007) SE-171 KMPD1125E04 CCD area sensor 2.2 black white

    Untitled

    Abstract: No abstract text available
    Text: 700volt MEMS SUPERJUNCTION MOSFETS for Green Energy APPLICATIONS. by Sam Anderson IceMOS Technology, USA T. Ishiguro (IceMOS Technology, Japan) IceMOS Technology Corporation 1 Introduction In many electronics applications a load has to be fed with a current at variable frequency and


    Original     		PDF 700volt

    mems

    Abstract: mems pacemaker MEMS ic silicon mems microphone glass frit bolometer mems microphone structure MEMS IC Introduction to accelerometers bolometer sensor
    Text: MEMS and Microsystem Packaging NMI at INNOS June 2005 CONFIDENTIAL Introduction ƒ Background to MEMS and Microsystem Packaging ƒ Types of Packaging – “Zero level” packaging – Primary packaging – Secondary packaging [Page 1] CONFIDENTIAL Silicon IC Systems


    Original     		PDF

    pressure sensors used for measuring blood pressure

    Abstract: MEMS blood pressure sensor MEMS pressure sensor infusion pump pressure transducer blood pressure sensors heart beat sensor wheatstone bridge pressure sensor pacemaker microprocessor heart pulse rate sensor infusion pumps
    Text: General Papers Medical MEMS Technology: Design, Fabrication, Packaging And High Volume Manufacturing Techniques Contributors: Roberta J. Swafford—IC Sensors Harold Joseph—IC Sensors Vladimir Vaganov—IC Sensors INTRODUCTION same way that the price of IC’s has decreased. However, a


    Original     		PDF