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    SUD35N10 Search Results

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    SUD35N10 Price and Stock

    Vishay Siliconix SUD35N10-26P-GE3

    MOSFET N-CH 100V 35A TO252
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    DigiKey SUD35N10-26P-GE3 Digi-Reel 1,928 1
    • 1 $2.91
    • 10 $1.883
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    SUD35N10-26P-GE3 Cut Tape 1,928 1
    • 1 $2.91
    • 10 $1.883
    • 100 $2.91
    • 1000 $0.96875
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    SUD35N10-26P-GE3 Reel 2,000
    • 1 -
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    Vishay Siliconix SUD35N10-26P-BE3

    MOSFET N-CH 100V 12A/35A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SUD35N10-26P-BE3 Cut Tape 1,509 1
    • 1 $2.91
    • 10 $1.883
    • 100 $2.91
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    SUD35N10-26P-BE3 Digi-Reel 1,509 1
    • 1 $2.91
    • 10 $1.883
    • 100 $2.91
    • 1000 $0.96875
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    SUD35N10-26P-BE3 Reel 2,000
    • 1 -
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    Vishay Siliconix SUD35N10-26P-E3

    MOSFET N-CH 100V 35A TO252
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SUD35N10-26P-E3 Cut Tape 308 1
    • 1 $2.91
    • 10 $1.883
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    • 1000 $2.91
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    SUD35N10-26P-E3 Digi-Reel 308 1
    • 1 $2.91
    • 10 $1.883
    • 100 $2.91
    • 1000 $2.91
    • 10000 $2.91
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    SUD35N10-26P-E3 Reel 2,000
    • 1 -
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    • 10000 $0.8775
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    Vishay Siliconix SUD35N10-26P-T4GE3

    MOSFET N-CH 100V 35A TO252
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SUD35N10-26P-T4GE3 Reel 2,500
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    Vishay Intertechnologies SUD35N10-26P

    N-CHANNEL 100-V (D-S) MOSFET - Tape and Reel (Alt: SUD35N10-26P)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SUD35N10-26P Reel 2,000
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    Find more SUD35N10 price and stock on Findchips.com

    SUD35N10 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SUD35N10-26P-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 35A TO252 Original PDF
    SUD35N10-26P-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 35A DPAK Original PDF
    SUD35N10-26P-T4GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 35A TO252 Original PDF

    SUD35N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sud35n10

    Abstract: No abstract text available
    Text: New Product SUD35N10-26P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) 100 0.026 at VGS = 10 V 35 31 nC • TrenchFET Power MOSFET • 100 % UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch


    Original     		PDF SUD35N10-26P O-252 SUD35N10-26P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sud35n10

    SUD35N10-26P

    Abstract: No abstract text available
    Text: New Product SUD35N10-26P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) 100 0.026 at VGS = 10 V 35 31 nC • TrenchFET Power MOSFET • 100 % UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch


    Original     		PDF SUD35N10-26P O-252 SUD35N10-26P-E3 08-Apr-05 SUD35N10-26P

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUD35N10-26P www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SUD35N10-26P 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SUD35N10-26P www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) a 0.0260 at VGS = 10 V 35 0.0375 at VGS = 7 V 31 Qg (TYP.) 31 nC TO-252 TO • TrenchFET power MOSFET • 100 % UIS tested


    Original     		PDF SUD35N10-26P O-252 SUD35N10-26P-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SUD35N10

    Abstract: AN609 SUD35N10-26P
    Text: SUD35N10-26P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUD35N10-26P AN609 12-Dec-07 SUD35N10

    SUD35N10-26P

    Abstract: SUD35N1026P
    Text: SPICE Device Model SUD35N10-26P Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUD35N10-26P 18-Jul-08 SUD35N10-26P SUD35N1026P

    Untitled

    Abstract: No abstract text available
    Text: New Product SUD35N10-26P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) 100 0.026 at VGS = 10 V 35 31 nC • TrenchFET Power MOSFET • 100 % UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch


    Original     		PDF SUD35N10-26P O-252 SUD35N10-26P-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SUD35N10-26P-GE3

    Abstract: SUD35N10-26PGE3
    Text: SPICE Device Model SUD35N10-26P-GE3 Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SUD35N10-26P-GE3 18-Jul-08 SUD35N10-26P-GE3 SUD35N10-26PGE3

    Untitled

    Abstract: No abstract text available
    Text: New Product SUD35N10-26P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) 100 0.026 at VGS = 10 V 35 31 nC • TrenchFET Power MOSFET • 100 % UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch


    Original     		PDF SUD35N10-26P O-252 SUD35N10-26P-E3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product SUD35N10-26P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) 100 0.026 at VGS = 10 V 35 31 nC • TrenchFET Power MOSFET • 100 % UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch


    Original     		PDF SUD35N10-26P O-252 SUD35N10-26P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SUD35N10-26P

    Abstract: SUD35N10
    Text: New Product SUD35N10-26P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) 100 0.026 at VGS = 10 V 35 31 nC • TrenchFET Power MOSFET • 100 % UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch


    Original     		PDF SUD35N10-26P O-252 SUD35N10-26P-E3 18-Jul-08 SUD35N10-26P SUD35N10

    7313

    Abstract: mosfet 407 AN609
    Text: SUD35N10-26P-GE3_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SUD35N10-26P-GE3 AN609, 09-Apr-09 7313 mosfet 407 AN609

    piezo injector

    Abstract: Automotive ECU IC automotive ecu circuit engine diesel injector MOSFET driver WSLT2512
    Text: Diesel ECU and Fuel Injector Drivers Table of Contents CAN-BUS, ESD Protection. 3 CAN-BUS, ISO9141 Bus Transceiver. 4


    Original     		PDF ISO9141 O-277A 0V-50VDC; SM5A27HE3 DO-218AB SM8A27HE3 piezo injector Automotive ECU IC automotive ecu circuit engine diesel injector MOSFET driver WSLT2512

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836