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    Vishay Siliconix SUM90N03-2M2P-E3

    MOSFET N-CH 30V 90A TO263
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    DigiKey SUM90N03-2M2P-E3 Digi-Reel 433 1
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    SUM90N03-2M2P-E3 Cut Tape 433 1
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    SUM90N03-2M2P-E3 Reel 800
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    Vishay Intertechnologies SUM90N03-2M2P-E3

    Trans MOSFET N-CH 30V 33A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: SUM90N03-2M2P-E3)
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    Avnet Americas SUM90N03-2M2P-E3 Reel 20 Weeks 800
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    Mouser Electronics SUM90N03-2M2P-E3 572
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    TTI SUM90N03-2M2P-E3 Reel 800
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    TME SUM90N03-2M2P-E3 800
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    Avnet Asia SUM90N03-2M2P-E3 21 Weeks 800
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    EBV Elektronik SUM90N03-2M2P-E3 21 Weeks 800
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    SUM90N03 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SUM90N03-2M2P-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 90A D2PAK Original PDF

    SUM90N03 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    6077

    Abstract: 717 MOSFET na 7705 AN609
    Text: SUM90N03-2m2P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUM90N03-2m2P AN609 20-Jul-07 6077 717 MOSFET na 7705

    74342

    Abstract: SUM90N03
    Text: New Product SUM90N03-2m2P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a, e 0.0022 at VGS = 10 V 90 0.0027 at VGS = 4.5 V 90 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 82 nC


    Original     		PDF SUM90N03-2m2P O-263 SUM90N03-2m2P-E3 08-Apr-05 74342 SUM90N03

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUM90N03-2m2P www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SUM90N03-2m2P 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SUM90N03-2m2P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a, e RDS(on) () ID (A) 0.0022 at VGS = 10 V 90 0.0027 at VGS = 4.5 V 90 Qg (Typ.) 82 nC TO-263 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:


    Original     		PDF SUM90N03-2m2P O-263 SUM90N03-2m2P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    74342

    Abstract: No abstract text available
    Text: New Product SUM90N03-2m2P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a, e 0.0022 at VGS = 10 V 90 0.0027 at VGS = 4.5 V 90 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 82 nC


    Original     		PDF SUM90N03-2m2P O-263 SUM90N03-2m2P-E3 08-Apr-05 74342

    mosfet 0018

    Abstract: No abstract text available
    Text: SPICE Device Model SUM90N03-2m2P Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUM90N03-2m2P 18-Jul-08 mosfet 0018

    74342

    Abstract: No abstract text available
    Text: SUM90N03-2m2P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a, e RDS(on) () ID (A) 0.0022 at VGS = 10 V 90 0.0027 at VGS = 4.5 V 90 Qg (Typ.) 82 nC TO-263 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:


    Original     		PDF SUM90N03-2m2P O-263 SUM90N03-2m2P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 74342

    Untitled

    Abstract: No abstract text available
    Text: New Product SUM90N03-2m2P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a, e 0.0022 at VGS = 10 V 90 0.0027 at VGS = 4.5 V 90 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 82 nC


    Original     		PDF SUM90N03-2m2P O-263 SUM90N03-2m2P-E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SUM90N03-2m2P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a, e RDS(on) () ID (A) 0.0022 at VGS = 10 V 90 0.0027 at VGS = 4.5 V 90 Qg (Typ.) 82 nC TO-263 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:


    Original     		PDF SUM90N03-2m2P O-263 SUM90N03-2m2P-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: DEMO CIRCUIT 1704A LTC4280 QUICK START GUIDE LTC4280 Hot Swap Controller with I C Compatible Monitoring 2 DESCRIPTION Demonstration circuit DC1704A4A is a 12V rail circuit using the LTC4280, Hot Swap Controller with I2C Compatible Monitoring. Included on a board is an input clamp, input and output


    Original     		PDF LTC4280 DC1704A4A LTC4280, DC590A DC1704A STV300NH02L 2N7002 100nF 820nF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477

    gs 069

    Abstract: PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04
    Text: N-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SC-75 SC-75A SC-89 gs 069 PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04