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    Vishay Siliconix SUP28N15-52-E3

    MOSFET N-CH 150V 28A TO220AB
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    Vishay Intertechnologies SUP28N15-52

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    Quest Components SUP28N15-52 8
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    Vishay Intertechnologies SUP28N15-52-E3

    MOS Power Transistors LV 200V (Alt: SUP28N15-52-E3)
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    EBV Elektronik SUP28N15-52-E3 143 Weeks 500
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    SUP28N15 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SUP28N15-52 Vishay Siliconix MOSFETs Original PDF
    SUP28N15-52-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 28A TO220AB Original PDF
    SUP28N15-52 SPICE Device Model Vishay N-Channel 150-V (D-S) 175 Degrees MOSFET Original PDF

    SUP28N15 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SUP28N15-52 Vishay Siliconix N-Channel 150-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 ID (A) 0.052 at VGS = 10 V 28 0.060 at VGS = 6 V 26 • • • • TrenchFET Power MOSFET 175 °C Junction Temperature PWM Optimized Compliant to RoHS Directive 2002/95/EC


    Original     		SUP28N15-52 2002/95/EC O-220AB SUP28N15-52 11-Mar-11 PDF

    SUP28N15-52

    Abstract: No abstract text available
    Text: SPICE Device Model SUP28N15-52 Vishay Siliconix N-Channel 150-V D-S 175° MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		SUP28N15-52 18-Jul-08 SUP28N15-52 PDF

    6948

    Abstract: AN609 SUP28N15-52
    Text: SUP28N15-52_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		SUP28N15-52 AN609 19-Dec-07 6948 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUP28N15-52 Vishay Siliconix N-Channel 150-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 ID (A) 0.052 at VGS = 10 V 28 0.060 at VGS = 6 V 26 • • • • TrenchFET Power MOSFET 175 °C Junction Temperature PWM Optimized Compliant to RoHS Directive 2002/95/EC


    Original     		SUP28N15-52 2002/95/EC O-220AB SUP28N15-52 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUP28N15-52 Vishay Siliconix N-Channel 150-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 ID (A) 0.052 at VGS = 10 V 28 0.060 at VGS = 6 V 26 • • • • TrenchFET Power MOSFET 175 °C Junction Temperature PWM Optimized Compliant to RoHS Directive 2002/95/EC


    Original     		SUP28N15-52 2002/95/EC O-220AB SUP28N15-52 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    70-088

    Abstract: 70088 SUP28N15-52
    Text: SPICE Device Model SUP28N15-52 Vishay Siliconix N-Channel 150-V D-S 175°° MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		SUP28N15-52 0-to-10V 05-Sep-02 70-088 70088 SUP28N15-52 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUP28N15-52 Vishay Siliconix N-Channel 150-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 ID (A) 0.052 at VGS = 10 V 28 0.060 at VGS = 6 V 26 • • • • TrenchFET Power MOSFET 175 °C Junction Temperature PWM Optimized Compliant to RoHS Directive 2002/95/EC


    Original     		SUP28N15-52 2002/95/EC O-220AB SUP28N15-52 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SUP28N15-52

    Abstract: No abstract text available
    Text: SUP28N15-52 New Product Vishay Siliconix N-Channel 150-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.052 @ VGS = 10 V 28 0.060 @ VGS = 6 V 26 D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized APPLICATIONS


    Original     		SUP28N15-52 O-220AB S-21375--Rev. 12-Aug-02 SUP28N15-52 PDF

    SUP28N15-52

    Abstract: sup28n15
    Text: SUP28N15-52 Vishay Siliconix N-Channel 150-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 ID (A) 0.052 at VGS = 10 V 28 0.060 at VGS = 6 V 26 • • • • TrenchFET Power MOSFET 175 °C Junction Temperature PWM Optimized Compliant to RoHS Directive 2002/95/EC


    Original     		SUP28N15-52 2002/95/EC O-220AB SUP28N15-52 18-Jul-08 sup28n15 PDF

    SUP28N15-52

    Abstract: EAR31 sup28n15
    Text: SUP28N15-52 New Product Vishay Siliconix N-Channel 150-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.052 @ VGS = 10 V 28 0.060 @ VGS = 6 V 26 D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized APPLICATIONS


    Original     		SUP28N15-52 O-220AB 08-Apr-05 SUP28N15-52 EAR31 sup28n15 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUP28N15-52 Vishay Siliconix N-Channel 150-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 ID (A) 0.052 at VGS = 10 V 28 0.060 at VGS = 6 V 26 • • • • TrenchFET Power MOSFET 175 °C Junction Temperature PWM Optimized Compliant to RoHS Directive 2002/95/EC


    Original     		SUP28N15-52 2002/95/EC O-220AB SUP28N15-52 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SUP28N15-52

    Abstract: No abstract text available
    Text: SUP28N15-52 New Product Vishay Siliconix N-Channel 150-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.052 @ VGS = 10 V 28 0.060 @ VGS = 6 V 26 D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized APPLICATIONS


    Original     		SUP28N15-52 O-220AB 18-Jul-08 SUP28N15-52 PDF

    SUP28N15-52 SPICE Device Model

    Abstract: SUP28N15-52
    Text: SPICE Device Model SUP28N15-52 Vishay Siliconix N-Channel 150-V D-S 175° MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		SUP28N15-52 S-71528Rev. 30-Jul-07 SUP28N15-52 SPICE Device Model SUP28N15-52 PDF

    sum45n25

    Abstract: PPAP PPAP for thermistor 0034D sud*45N05-20L SQ7414EN ceramic disc aec capacitors siliconix an80 SUP57N20-33 SUP75N06-08
    Text: For Automotive Applications w w w. v i s h a y. c o m SELECTOR GuIdE Power MoSFeTs P O w E R M O S F E Ts V I S H AY I N T E R T E C H N O L O G Y, I N C . SeMICoNDUCTorS reCTIFIerS Schottky single, dual Standard, Fast, and ultra-Fast Recovery (single, dual)


    Original     		VMN-SG2117-0705 sum45n25 PPAP PPAP for thermistor 0034D sud*45N05-20L SQ7414EN ceramic disc aec capacitors siliconix an80 SUP57N20-33 SUP75N06-08 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 PDF

    sud*50n025-06p

    Abstract: SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110
    Text: SELECTOR GUIDE V I S H A Y I N T E R T E C H N O L O G Y, I N C . Power MOSFETs for DC/DC Applications Siliconix LITTLE FOOT LITTLE FOOT® Plus Tr e n c h F E T ® WFET ChipFET® P ow e r PA K ® Application-Specific MOSFETs w w w. v i s h a y. c o m


    Original     		VSA-SG0019-0310 sud*50n025-06p SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110 PDF

    gs 069

    Abstract: PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04
    Text: N-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		SC-75 SC-75A SC-89 gs 069 PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04 PDF