1ss335
Abstract: W810i SCH-B380 P990i k800i nokia c5 hp ipaq power connector BT-STA2416C2 B560 transistor datasheet mobile nokia circuit diagram
Text: AN2612 Applications note How to use the BT_HTS_RX_R2 evaluation board Features ! Support A2DP/AVRCP sink side profile. ! Class 2 (max +4 dBm RF power output), BQB qualified module. ! Single 5-V DC power supply. ! 1.5-Vpp line-out (stereo) with full scale input.
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AN2612
BT-STA2416C2
1ss335
W810i
SCH-B380
P990i
k800i
nokia c5
hp ipaq power connector
BT-STA2416C2
B560 transistor datasheet
mobile nokia circuit diagram
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COBRA5272
Abstract: sentec tp 0401 ATMEL 0613 M95P08 ATMEL 0619 K4S641632 M95P080 TP0401 D0504
Text: 5 4 3 2 1 COBRA5272 Module R1.0 D D CON0301B CON0301A IC 0204 Reset-LED D[31:24] BDM-Interface Reset-Key Driver /RST IC 0701 IC 0704 Reset IC 0203 optional D[23:16] EEPROM Driver Test-LED PortA (16Bit) Data[31:0] PortB (8Bit) Addr[22:0] IC 0202 D[15:8] Driver
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COBRA5272
CON0301B
CON0301A
16Bit)
66MHz
100nF
ICL3232CVE
sentec
tp 0401
ATMEL 0613
M95P08
ATMEL 0619
K4S641632
M95P080
TP0401
D0504
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2200bg schematic
Abstract: Hannstar mainboard ns681680 78l05 so8 Preface Notebook Computer AR9220 2200bg Z0451 RSS090 Z2333
Text: Preface Notebook Computer M120C/M121C/M120W/M121W Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are
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M120C/M121C/M120W/M121W
Z0203-A
Z2210-A
Z2211-A
DTD114EK
DTD114EK
ZA0201
71-M12C0-004)
2200bg schematic
Hannstar mainboard
ns681680
78l05 so8
Preface Notebook Computer
AR9220
2200bg
Z0451
RSS090
Z2333
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Untitled
Abstract: No abstract text available
Text: b?E J> m SAMSUNG ELECTRONICS INC 7 ^ 4 1 4 2 0Ü1S3ÖG SS3 KM41C1000C CMOS DRAM 1Mx1 Bit C M O S Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • P e rfo rm a n c e ra n g e : T h e S am sung KM41C1000C is a C M O S high speed 1,048,576x1 D ynam ic R andom A ccess M emory. Its
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KM41C1000C
KM41C1000C
576x1
110ns
KM41C1000C-7
130ns
KM41C1000C-8
KM41C1000C-6
150ns
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Untitled
Abstract: No abstract text available
Text: SAM S UN G E L E C T R O N I C S INC b7E » • 7^4142 0 D 1 S 47 7 = 4T CMOS DRAM KM44C256CL 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM44C256CL is a CMOS high speed 262,144 x 4 D ynam ic Random A ccess M em ory. Its
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KM44C256CL
256Kx4
KM44C256CL
KM44C256C
110ns
KM44C256CL-7
130ns
KM44C256CL-8
150ns
20-LEAD
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Untitled
Abstract: No abstract text available
Text: KS82C411 PARALLEL I/O INTERFACE FEATURES G ENERAL DESCRIPTIO N • Fully IBM PC parallel port compatible The KS82C411 Parallel I/O Interface is a 40 pin DIP custom LSI which provides parallel port interlace be tween IBM PC and printer with minimum external
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KS82C411
KS82C411
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44c256
Abstract: KM44C256 KM44C256CSL-7 KM44C256CSL-8 18 pins KM44C256
Text: SAMSUNG E L E C TRONICS INC b?E D • 71^142 KM44C256CSL O O I S M 1^ TER SUGK CM OS DRAM 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION » Performance range: The Samsung KM44C256CSL is a CMOS high speed 262,144 x 4 Dynamic Random Access Memory. Its
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KM44C256CSL
256Kx4
44C256CS
110ns
KM44C256CSL-7
130ns
KM44C256CSL-8
150ns
100fiA
cycle/128ms
44c256
KM44C256
18 pins KM44C256
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100-10L
Abstract: KS58C05 Keyboard SAMSUNG 100-10L wo 4 pin dip switch KS58C05N KS58D05 KS58D05N
Text: KS58C05/KS58D05 CMOS INTEGRATED CIRCUIT PULSE DIALER WITH REDIAL The KS58C/D05 is a m o n o lith ic CMOS integrated c irc u it w hich uses an inexpensive RC o s c illa to r fo r its frequen cy reference and provides all the features required fo r im ple m e n tin g a pulse dia le r w ith 32 d ig it redial.
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KS58C05/KS58D05
KS58C05/KS58D05
KS58C/D05
100-10L
KS58C05
Keyboard SAMSUNG
100-10L wo
4 pin dip switch
KS58C05N
KS58D05
KS58D05N
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pixel clock generator ttl
Abstract: No abstract text available
Text: SAMSUNG ELECTR ONI CS INC M2E D KS82C670/671 BB 7 T b M m 2 000^470 S • SMGK Video Clock Generator P relim inary FEATURES • Single/Dual Clock output versions • Custom ROM programmed frequencies up to 100 MHz ■ "On-the-1ly,rfrequency selection • Separate on-chip Phase Locked Loops
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KS82C670/671
140MHz
KS82C670
KS82C671
KS82C671)
KS82C670/671
20-Pln
pixel clock generator ttl
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Untitled
Abstract: No abstract text available
Text: KS82C670/671 Video Clock Generator P relim inary F E A TU R E S • S ingle/D ual C lock output versions • C ustom ROM progra m m e d fre quencies up to 100 MHz • "O n -the -fly" fre q u e n c y selection • S epa rate o n -chip Phase Locked Loops
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KS82C670/671
KS82C671
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KM41C1001bp
Abstract: c1001b KM41C1001BJ
Text: KM41C1001B CMOS DRAM 1 M X 1 Bit C M O S Dynamic RAM with Nibble M ode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM41C1001B is a CMOS high speed 1,048,576 x 1 Dynam ic Random A ccess Memory. Its de sign is o p tim ized fo r high perform ance ap p lica tio n s
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KM41C1001B
KM41C1001B6
KM41C1001B
18-LEAD
20-LEAD
KM41C1001bp
c1001b
KM41C1001BJ
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390P
Abstract: KS5805 KS5805A KS5805AN KS5805B KS5805BN
Text: KS5805A/KS5805B CMOS INTEGRATED CIRCUIT TELEPHONE PULSE DIALER WITH REDIAL The KS5805A/B is a m onolithic CMOS integrated circuit and provides all the features required for implementing a pulse dialer with redial. FUNCTIONS • • • • • • • •
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KS5805A/KS5805B
KS5805AVB
KS5805A
KS5805B
KS58A/B05
390P
KS5805
KS5805AN
KS5805BN
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KS5805A
Abstract: KS5805 390P KS5805AN KS5805B KS5805BN Keyboard SAMSUNG 40
Text: CMOS INTEGRATED CIRCUIT KS5805A/KS5805B TELEPHONE PULSE DIALER WITH REDIAL i The KS5805AVB is a monolithic CMOS integrated circuit and provides all the features required for im plementing a pulse dialer with redial. 18 DIP FUNCTIONS • Mute output logic “ 0 ”
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KS5805A/KS5805B
KS5805AVB
KS5805A
KS5805B
KS58A/B05
KS5805
390P
KS5805AN
KS5805BN
Keyboard SAMSUNG 40
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KM41C1000BJ
Abstract: KM41C1000B KM41C1000BP KM41C1000B-7 41C1000 KM41C1000B-8 41C1000B
Text: KM41C1000B CMOS DRAM 1 M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: • • • • • • • • • tnAc tcAc •nc KM41C1000B-6 60ns 20ns 110ns KM41C1000B-7 70ns 20ns 130ns KM41C1000B-8 80ns 20ns
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KM41C1000B
KM41C1000B-6
KM41C1000B-7
KM41C1000B-8
KM41C1000B-10
100ns
110ns
130ns
150ns
180ns
KM41C1000BJ
KM41C1000B
KM41C1000BP
41C1000
41C1000B
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SE MI CO ND UC TOR INC 10 ' •' MC78LXXAC SERIES • D eT| 7 ^ 4 1 4 2 • - OGD47n 3 | - LINEAR INTEGRATED CIRCUIT 3-TERMINAL POSITIVE VOLTAGE REGULATORS These regulators employ internal current-limiting and thermat-shutdown, making them essentially indestructible. If adequate heat sinking is
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MC78LXXAC
OGD47n
100mA
110mV
11mV/V
11mV/Vx0
24x20mA
MC78LXXAC
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM5322104CKU/CKUG KMM5322104CKU/CKUG Fast Page Mode with Extended Data Out 2M x 32 DRAM SIMM using 2Mx8 , 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5322104CKU is a 2Mx32bits RAM high density memory module. The Dynamic Part Identification
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KMM5322104CKU/CKUG
KMM5322104CKU/CKUG
KMM5322104CKU
2Mx32bits
cycles/32ms
5322104CKUG
28-pin
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KS7126CN
Abstract: TSC7126
Text: SAMSUNG SE MICO ND UC TO R INC Sfl -• □ □ □ 4 C13M . ;: KS7126 -7 ^ S /~ /¿ CMOS INTEGRATED CIRCUIT 3 1/2 DIGIT A/D CONVERTER The single chip CMOS KS7126 incorporates all the active devices for a 31/2 digit anatog-to-digital converter to directly drive an LCD display. The
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KS7126
KS7126
KS74HCTLS266
KS7126CN
TSC7126
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KM41C1000B-8
Abstract: KM41C1000B
Text: SAMSUNG ELECTRONICS INC 4SE D • 7 ^ 4 1 4 2 0G10022 5 KM41C1000B CMOS DRAM 1M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: two • • • • • • • • • tcAQ The Samsung KM41C1000B is a CMOS high speed
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0G10022
KM41C1000B
KM41C1000B-6
110ns
KM41C1000B-7
130ns
KM41C1000B-8
KM41C1000B-10
KM41C1000B
576x1
KM41C1000B-8
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Untitled
Abstract: No abstract text available
Text: KMM332F104BT-L KMM332F124BT-L DRAM MODULE KMM332F104BT-L & KMM332F124BT-L Fast Page with EDO Mode 1M x 32 DRAM SO DIM M using 1M X 16, 1K & 4K Ref., 3.3V, Low pow er/Self-R efresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F10 2 4BT is a 1Mx32bits Dynamic
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KMM332F104BT-L
KMM332F124BT-L
KMM332F104BT-L
KMM332F124BT-L
KMM332F10
1Mx32bits
332F10
1Mx16bits
44-pin
72-pin
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KM44V4104CS
Abstract: No abstract text available
Text: KMM332F400CS-L KMM332F41OCS-L DRAM MODULE KMM332F400CS-L & KMM332F410CS-L Fast Page with EDO Mode 4M x 32 DRAM SODIMM Using 4MX4, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F40 1 0CS is a 4Mx32bits Dynamic Part Identification
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OCR Scan
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KMM332F400CS-L
KMM332F41OCS-L
KMM332F400CS-L
KMM332F410CS-L
KMM332F40
4Mx32bits
24-pinTSOPII
72-pin
KM44V4104CS
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM332F400BS-L KMM332F410BS-L DRAM MODULE KMM332F400BS-L & KMM332F410BS-L Fast Page with EDO Mode 4M x 32 DRAM SODIMM Using 4MX4, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F40 1 0BS is a 4Mx32bits Dynamic Part Identification
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OCR Scan
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KMM332F400BS-L
KMM332F410BS-L
KMM332F400BS-L
KMM332F410BS-L
KMM332F40
4Mx32bits
24-pinTSOPII
72-pin
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Untitled
Abstract: No abstract text available
Text: KMM332F400CS-L KMM332F41OCS-L DRAM MODULE KMM332F400CS-L & KMM332F410CS-L Fast Page with EDO Mode 4M x 32 DRAM SODIMM Using 4MX4, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F40 1 0CS is a 4Mx32bits Dynamic Part Identification
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OCR Scan
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KMM332F400CS-L
KMM332F41OCS-L
KMM332F410CS-L
KMM332F40
4Mx32bits
KMM332F400CS-L5/L6
24-pinTSOPII
72-pin
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PDF
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EZ 720
Abstract: No abstract text available
Text: KMM5364005CK/CKG KMM5364105CK/CKG DRAM MODULE KMM5364005CK/CKG & KMM5364105CK/CKG Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53640 1 05CK is a 4Mx36bits Dynamic
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OCR Scan
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KMM5364005CK/CKG
KMM5364105CK/CKG
KMM5364005CK/CKG
KMM5364105CK/CKG
KMM53640
4Mx36bits
24-pin
28-pin
72-pin
EZ 720
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D • 7 T bm M5 KM44V1000B/BL GGlSfiG3 SDU CMOS ORAM 1 M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM44V1000B/BL is a high speed CMOS 1,048,576 b it x 4 D ynam ic Random A ccess M em ory. Its
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OCR Scan
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KM44V1000B/BL
KM44V1000B/BL
KM44V1000B/BL-7
130ns
KM44V1000B/BL-8
150ns
180ns
KM44V1000B/BL-10
20-LEAD
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