Untitled
Abstract: No abstract text available
Text: 0PA131 OPA2131 OPA4131 BURR - BROW N General Purpose FET-INPUT OPERATIONAL AMPLIFIERS FEATURES OPA131 • FET INPUT: lB = 50pA max • LOW OFFSET VOLTAGE: 750[iV max • WIDE SUPPLY RANGE: ±4.5V to ±18V • SLEW RATE: 10V/ps NC V+ Output • WIDE BANDWIDTH: 4MHz
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0PA131
OPA2131
OPA4131
OPA131
OPA131
T01ERANCING
ZZ235
S-012_
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til 31a
Abstract: h196 H199 IRHM7130 IRHM8130 EO 28b H202
Text: Data Sheet No. PD-9.707A INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM7130 o r IRHM8130 N-CHANNEL MEGA RAD HARD 100 Volt, 0.18Q, MEGA RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs
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IRHM7130
IRHM8130
1x105
T01ERANCING
IRHM7130D
IRHM7130U
O-254
MIL-S-19500
H-202
til 31a
h196
H199
IRHM7130
IRHM8130
EO 28b
H202
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AN780a
Abstract: MOC 3063 APPLICATION NOTE AN-780A moc opto triac motorola an780a MAC3060-8 triac driver opto application note 2 amp triac driver opto OPTO TRIAC moc MOC3060 and applications
Text: MOTOROLA SC -C D I0D ES/0PT03- 71 DE J b 3 h 7 E S 5 GD73Dm 1 uraer this data sheet by MAC3060/D M OTOROLA S E I¥ ig C O E y D U C T O R TECHNICAL DATA T ria c s S ilic o n Bidirectional Triode T h yristo rs . . . d e s ig n e d fo r fu ll-w ave ac p o w e r control app lications, an d sp e cifically d e sig n e d to be
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-CDI0DES/0PT03-MOTOROLA
GD73Dm
MAC3060/D
MOC3060
MK145BP,
MAC3060
C3586S
AN780a
MOC 3063 APPLICATION NOTE
AN-780A
moc opto triac
motorola an780a
MAC3060-8
triac driver opto application note
2 amp triac driver opto
OPTO TRIAC moc
MOC3060 and applications
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rectifier diode 6 amp 400 volt
Abstract: 340E-01 transistor 2 Amp 3 volt MJH16018 rectifier diode 20 amp 800 volt blocking diode 20 amp 1200 volt MUR30100E 200 Amp current 1000 volt diode 100 Amp current 1000 volt diode blocking diode 200 amp 1200 volt
Text: Order this data sheet by MUR30100E/D MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA TM Sw itchm ode Pow er Rectifier MUR30100E . designed for use in switching power supplies, inverters and as freewheeling diodes, these state-of-the-art devices have the following features:
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MUR30100E/D
MUR30100E
O-218
25137R
MUR30100E/D
rectifier diode 6 amp 400 volt
340E-01
transistor 2 Amp 3 volt
MJH16018
rectifier diode 20 amp 800 volt
blocking diode 20 amp 1200 volt
MUR30100E
200 Amp current 1000 volt diode
100 Amp current 1000 volt diode
blocking diode 200 amp 1200 volt
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T3D 87
Abstract: t3d 99 G-100 IRGMC50U
Text: International [^Rectifier PD-9.719A IRGMC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT D escription Product Sum m ary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
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IRGMC50U
IRGMC50U
IRGMC50UD
IRGMC50UU
MIL-S-19500
O-254
G-105
T3D 87
t3d 99
G-100
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IRFD1Z3 equivalent
Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not
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VP1204N
TP8P08
5001D
VP1206N
1208N
5002D
1209N
VP1209N
IRFD1Z3 equivalent
8N60 equivalent
TP8N20
TP8N10
siemens semiconductor manual
What is comparable with IRF 3205
2N6823
irf8408
MTM5N90 designers datasheet
smps cook circuit
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1PHX11136Q-14
MHW721A2
13001 S 6D TRANSISTOR
atv5030* motorola
2N5591 MOTOROLA
13001 6D TRANSISTOR
BGY41
MHW710-1
construction linear amplifier 2sc1945
7119 amperex
bf503
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motorola AN938
Abstract: MRF567 mrf56
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF557 The RF Line 1.5 W 870 M H z RF LOW POWER TRANSISTOR NPN SILICON RF LOW POWER TRANSISTOR N P N SILICON . . . d e s ig n e d p rim a rily fo r w id e b a n d large s ig n a l p redrive r stages in the 800 M H z fre q u en cy range.
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MRF557
motorola AN938
MRF567
mrf56
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2N7219
Abstract: 555C IRFM240 JANTXV2N7219 2N7219 JANTX
Text: Data Sheet No. PD-9.555C INTERNATIONAL RECTIFIER I« R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM840 8N7S19 JANTX2N7219 "‘ JANTXV2N7219 N-CHANNEL [REF: M IL-S-19500/5S6] Product Summary 200 Volt, 0.18 Ohm HEXFET The HEXFET® technology is the key to International
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IRFMS40
JANTXSN7S19
JANTXV2N7219
MIL-S-19500/5S6]
IRFM240D
IRFM240U
O-254
MIL-S-19500
2N7219
555C
IRFM240
JANTXV2N7219
2N7219 JANTX
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QJ50
Abstract: TRANSISTOR MOSFET K 1249 IRFI064 LS51 BYL3
Text: Data Sheet No. PD-9.876 I«R INTERNATIONAL RECTIFIER AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR IRFI064 N-CHANNEL Product Summary 60 Volt, 0.017 Ohm HEXFET The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFI064
irf10b4d
irfi064u
O-259
MIL-S-19500
QJ50
TRANSISTOR MOSFET K 1249
IRFI064
LS51
BYL3
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MOC5008
Abstract: MOC5007 MOC5009
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M O C 5007 M O C 5008 M O C 5009 6 -P in D IP O p to is o la to rs Logic Output . . . gallium arsenide IRED optically coupled to a high-speed integrated detector w ith S chm itt trig ger output. Designed for applications requiring electrical isolation, fast
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E54915
MOC5007
MOC5008
MOC5007
MOC5009
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transistor KJJ
Abstract: H11A41 VDE0860 H11A1 VDE0113 VDE0160 VDE0832 VDE0833
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA H11A1 thru H11A5 6-P in D IP O p to is o la to rs Transistor Output These device s co n s is t o f a g a lliu m a rsen id e in fra re d e m ittin g d io d e o p tic a lly c o up le d to a m o n o lith ic s ilic o n p h o to tra n s is to r detector.
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
VDE110b,
IEC204/,
VDE0113,
VDE0160,
VDE0832,
VDE0833,
transistor KJJ
H11A41
VDE0860
H11A1
VDE0113
VDE0160
VDE0832
VDE0833
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6.5S5
Abstract: 5S51 ely transformers I282 A IRFM054 SS452 DD113
Text: Data Sheet No. PD-9.709A INTERNATIONAL RECTIFIER l O R j AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMQ54 N-CHANNEL 60 Volt, 0.027 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier’s advanced line of power M O SFE T transistors.
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IRFM054
IRFM054D
IRFM054U
O-254
MIL-S-19500
I-284
6.5S5
5S51
ely transformers
I282 A
IRFM054
SS452
DD113
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HFA45HI120C
Abstract: 3108 DIODE case 19j 19j case 0u50 transistor k31
Text: International [^Rectifier HEXFRED P D -2 .3 7 5 Provisional Data Sheet HFA45HI120C Features: Major Ratings and Characteristics Characteristics — — — — — — — — — Units 1200 V 'F AV 28 A trr (per leg) 135 ns Qrr (per leg) 675 nC Ir r m (per leg)
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HFA45HI120C
00A/jis,
00A//Ã
O-259AA
HFA45HI120C
3108 DIODE
case 19j
19j case
0u50
transistor k31
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1PHX11136Q-14
A5 GNE mosfet
jo3501
2N4427 equivalent bfr91
2N503
2N5160 MOTOROLA
BF431
BFR96
HY 1906 transistor
jo2015
kd 2060 transistor
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MRF458
Abstract: K 2645 transistor transistor d 2645
Text: 1EE D I b3b?E54 MOTOROLA MOTOROLA SC 0aö7fe,73 1 | X S T R S /R F _ SEMICONDUCTOR TECHNICAL DATA MRF458 T h e R F L in e 80 W—30 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR . . . designed fo r power am plifier applications in com m erical and amateur radio equipm ent to 30 M H z.
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MRF458
MRF458
K 2645 transistor
transistor d 2645
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MAC3060-8
Abstract: MAC3060-X an-780a MOC3060 and applications TRIAC FT 12 motorola an780a "0580" TRIAC OPTO TRIAC moc3060 ac30602 AC3060
Text: 71 MOTOROLA SC -CDI0DES/0PT03- DE|b3b7ES5 GD73Qm 1 T - t MOTOROLA t — n u ra e r this data ' sheet by M A C3060/D SEi¥lECOE^DUCTOR TECHNICAL DATA Triacs Series Silicon Bidirectional Triode Thyristors . . . designed fo r full-w ave ac pow er control applications, and specifically designed to be
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-CDI0DES/0PT03-
GD73Qm
C3060/D
MOC3060
AC3060
MK145BP,
DS3712
MAC3060-8
MAC3060-X
an-780a
MOC3060 and applications
TRIAC FT 12
motorola an780a
"0580" TRIAC
OPTO TRIAC moc3060
ac30602
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MT 1336
Abstract: PHOENIX CONTACT # 32 00 83 6
Text: ftm/voNic y - c o *» . SINGLE ROW DUALOBE Scoop-proof, Plastic or Metal shrouded Connectors Cryogenic -200PC to 225°C ACTUAL SIZE !L_ i : r! PLUG ! i Jl 09 position .210 .225 OPTION; Without Mounting Ears Coupling threads for 1mm screws.
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-200PC)
986xamples,
TGS25M4
MT 1336
PHOENIX CONTACT # 32 00 83 6
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MRF548
Abstract: MRF531 MRF548 MOTOROLA MRF542 MRF531 motorola LG CRT MRF534 motorola AN938
Text: I MOTOROLA SC XSTRS/R F 4bE D • b3b72S4 MOTOROLA 00^4730 2 ■MOTb - T - 3 3 - ¿ ^5 SEMICONDUCTOR TECHNICAL DATA MRF531 The R F Line HIGH FREQUENCY TRANSISTOR NPN SILICO N NPN SILICON HIGH FREQUENCY TRANSISTOR . . . designed for high voltage and high current f j switching appli
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b3b72S4
MRF531
MRF542
AN938,
MRF542,
MRF548
00R4741
T-33-05
MRF548
MRF531
MRF548 MOTOROLA
MRF531 motorola
LG CRT
MRF534
motorola AN938
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2N3422
Abstract: 2N3442 2n4347 2N4327 C0440
Text: MOTOROLA SC XSTRS/R F 1EE D | b3b72SM G0â44b0 MOTOROLA r - 3 3 -/ 3 T | 2N3442 2N4347 SEMICONDUCTOR TECHNICAL DATA 5.0 AND 10 AMPERE POWER TRANSISTORS NPN SILICON HIGH-POWER INDUSTRIAL TRANSISTORS 1 2 0 ,1 4 0 V O L T S 1 0 0 ,1 1 7 W A T T S NPN silicon power transistors designed for applications in
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b3b72SM
2N3442
2N4347
2N4347
2N3442
2N3422
2N4327
C0440
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hall marking code A04
Abstract: M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code
Text: Introduction Advanced Digital r i Consumer Products L-l Microcomputer Components [2 Logic: Standard, Special p , and Programmable I-5* Analog and Interface Integrated Circuits Semiconductor r= Components Group L5 Product Literature and r~ Technical Training L”
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2PHX14226-31
hall marking code A04
M143206EVK
differences uc3842a uc3842b
toshiba satellite laptop battery pinout
2N3773 audio amplifier diagram
toshiba laptop battery pack pinout
BC413
motorola transistor sj 5812
M68HC705X16
ABB inverter motor fault code
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MRF515
Abstract: motorola MRF515
Text: I MOTOROLA SC XSTRS/R F MbE P • b3b725M MOTOROLA DGTH7n T ■ SEMICONDUCTOR TECHNICAL DATA T ■ flO T b 5 3 - Q 5 MRF515 The R F L in e 0.75 W - 470 M H z NPN S IL IC O N H IG H F R EQ U E N C Y T R A N SIS T O R HIGH F R EQ U E N C Y T R A N SIST O R
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b3b725M
MRF515
MRF515
motorola MRF515
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MJ10001
Abstract: No abstract text available
Text: MOTOROLA SC 12E D I b3b?SS4 GQflSGGT T | XSTRS/R F MOTOROLA ~7:~33'£t MJ10000 MJ10001 SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’ s D a ta Sheet 20 A M P E R E NPN SILICON POWER DARLINGTON TRANSISTORS SWITCHMODE SER IES NPN SILICON POWER DARLINGTON TRANSISTORS
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MJ10000
MJ10001
J10001
MJ10001
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TRANSISTOR tip122 CHN 949
Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
Text: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.
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38v01
TRANSISTOR tip122 CHN 949
E2955T
BD706
TU F 13003
13003 Transistor NPN Power TO 126
transistor E2955T
construction linear amplifier 2sc1945
LA 4301
8d679
transistor bf 175
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