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    T0218A Search Results

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    T0218A Price and Stock

    Essentra Components ST0218A

    Spiral Wraps, Sleeves, Tubing & Conduit TUBING:SILICON NATURAL
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    Mouser Electronics ST0218A
    • 1 $105.13
    • 10 $92
    • 100 $85.43
    • 1000 $85.43
    • 10000 $85.43
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    RS ST0218A Reel 15 Weeks 1
    • 1 $102.81
    • 10 $89.96
    • 100 $84.82
    • 1000 $84.82
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    Marathon Motors GT0218 (ALTERNATE: 213TTDBD6003)

    AC Motor, 10, 3600, DP, 213TC, 3, 60, 230, 460 | Marathon Motors GT0218
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS GT0218 (ALTERNATE: 213TTDBD6003) Bulk 11 Weeks 1
    • 1 $926.43
    • 10 $926.43
    • 100 $926.43
    • 1000 $926.43
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    T0218A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STPS3045CW

    Abstract: top-31 T0-218AC STPS12045TV T0247 T0218 stps6045cw STPS80100TV
    Text: POWER RECTIFIERS 5 7. SGS-IHOMSON mi TOP3I POWER SCHOTTKY DIODES T0218AC T0247 ISOTOP' Isolated T0247, T0218, TOP3 AND ISOTOP TYPE SCHOTTKY RECTIFIERS T j (max) =150°C (except for 15V) lo Device V rrm V f @ lo I r @ V rrm I fsm Max (V) Max (mA) (A) Package


    OCR Scan     		PDF T0218AC T0247 T0247, T0218, STPS3045CPI STPS6045CPI STPS3045CP STPS4045CP STPS6045CP STPS20L40CW STPS3045CW top-31 T0-218AC STPS12045TV T0247 T0218 stps6045cw STPS80100TV

    DA 2688

    Abstract: transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688
    Text: TEXAS r ÌNSTR 8961726 TEXAS IN STR 62C OPTO 37004 TIP3055 N-P-N SILICON POWER TRANSISTOR T - 3 3 DECEMBER 1970 - REVISED OCTOBER 1884 Designed for Complementary Use with TIP2955 9 0 W at 2 5 ° C C ase T emperature 15 A Continuous Collector Current Plastic-Case Version of 2N 3055


    OCR Scan     		PDF TIP3055 TIP2955 T0-218AA 7S265 DA 2688 transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688

    Q400414

    Abstract: 06040J7 TO810MH q2006l5 triac Q2008F51 Triac SC141D L201E5 SC136B L4004F91 T6401M
    Text: LORAS INDUSTRIES ITrms Amps PART No. INC 42E VDRM IDRM Volts mAmps PACKAGE Q1 D 5500440 TRIAC IGT Q2 Q3 mAmps DOOOODt. T IL O R A “T - 2 5 ' O Î VGT Volts Q4 Ih mAmps ITM Amps VTM Volts 0.6 Amps ITrms TO-92 Package MAC974 MAC976 0.6 0.6 MA0&7fr " : MAC97A3 "•


    OCR Scan     		PDF -T-25-0Ã MAC974 MAC976 MAC97AÂ MAC97A6 MAC97A8 SC92B T0218AC BTB41200B Q400414 06040J7 TO810MH q2006l5 triac Q2008F51 Triac SC141D L201E5 SC136B L4004F91 T6401M

    Untitled

    Abstract: No abstract text available
    Text: TECCÔR ELE CTRONICS INC 24E D- Afl72fln 0001311 7 ~ 2 S -Z 2 > TECCOR ELECTRONICS, INC. 1801 HURD DRIVE IRVING, TEXAS 75038-4385 PHONE 214/580-1515 FAX 214/550-1309 ALTERNISTORS General Description 15-40 Amps T h e se Alternistors are offered in three b a sic


    OCR Scan     		PDF Afl72fln

    Untitled

    Abstract: No abstract text available
    Text: N AflER PHILIPS/DISCRETE OLE D PowerMOS transistor • 0014550 7 BUZ358 r- -i3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUZ358 T0218AA; T-39-13 T0014flSS

    Untitled

    Abstract: No abstract text available
    Text: N AMER P H I LIPS/DISCRETE QbE D PowerMOS transistor • bbSBTBl 0014737 4 ■ BUZ384 T - V 1 'I Z May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. FREDFET* with fast-recovery reverse diode. This device is


    OCR Scan     		PDF BUZ384 bbS3i31 00147T0 BUZ384 T-39-13 bb53T31 bb53T31 Q0147TS

    buz349

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE PowerMOS transistor ObE D • bb53T31 0014745 T ■ BUZ349 T " 31-13 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF bb53T31 BUZ349 TQ218AA; bbS3131 T-39-13 b53131 D0147SQ buz349

    T1C263M

    Abstract: q4015 triac T1C226D Q200BL5 Q2006L5 Q5025Z6 SC160D q201015 Q4015A Q4006
    Text: PART No. ITrms Amps PACKAGE VDRM IDRM Volts mAmps Q1 TRIAC IGT Q2 Q3 mAmps Q4 VGT Volts Ih mAmps VTM Volts ITM Amps 0.6 Amps ITrms TO—92 Package MAC974 MAC976 MAC978 MAC97A4 MAC97A6 MAC97A8 200 400 600 200 400 600 .010 .010 .010 .010 .010 .010 10 10 10 5


    OCR Scan     		PDF MAC974 MAC976 MAC978 MAC97A4 MAC97A6 MAC97A8 SC92B SC92C SC92D SC92M T1C263M q4015 triac T1C226D Q200BL5 Q2006L5 Q5025Z6 SC160D q201015 Q4015A Q4006

    BUZ358

    Abstract: LDM80
    Text: N AMER PHILIPS/DISCRETE OLE D PowerMOS transistor bbSBTBl 0014050 7 BUZ358 r - 3 ^ - ls May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF bb53131 BUZ358 r-31- T0218AA; T-39-13 800VC BUZ358 LDM80

    transistor KF 517

    Abstract: BUZ310 KF 517 BUZ31 BUZ-310 B53 transistor
    Text: N AMER PH ILI PS/DIS CRET E : ObE D Pow erM O Stransistor • 1 ^ 53^31 D D iqflBI 5 ■ B U Z 31Ü ^ 2^-1/ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUZ31Ã T0218AA; bb53T31 BUZ310 T-39-11 transistor KF 517 BUZ310 KF 517 BUZ31 BUZ-310 B53 transistor

    BUZ384

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE GbE D PowerMOS transistor • bbSBTBl 001470? 4 ■ BUZ384 t - 2*?'13 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. FREDFET* with fast-recovery reverse diode. This device is


    OCR Scan     		PDF BUZ384 T0218AA; BUZ384 T-39-13

    MC 140 transistor

    Abstract: "MC 140" transistor buz355 transistor 502 alps 502 C alps 503 a
    Text: N AMER PHILIPS/DISCRETE j ObE D • PowerMÔS transistor ^53131 0014015 5 m BÜZ355 r - 3cj - l 3 May 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF BUZ355T is-18 T0218AA; BUZ355 T-39-13 MC 140 transistor "MC 140" transistor buz355 transistor 502 alps 502 C alps 503 a

    BUZ311

    Abstract: P70D
    Text: N AMER PHILIPS/DISCRETE DbE D m PowerMOS transistor □bS3T31 OGlMaBb E • BUZ311 T* ~ 3 I I^ May 1987 GENERAL DESCRIPTION N-channel enchancement mode fleld-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUZ311 T0218AA; P70D

    Untitled

    Abstract: No abstract text available
    Text: N ANER PHI L I P S / D I S CR E T E bbSBTBl 0 0 1 4 7 7 3 4 ObE D HJZ330 T - 31-/3 PowerMOS transistor May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF HJZ330 T0218AA; BUZ330 T-39-13 BUZ33U

    BUZ357

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE OLE D PowerM OS transistor • b b S a ^ l 0014343 T B U Z 357 T~ ~ 3^ - 13- May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF LLS3T31 BUZ357 T-39-13 D014fl4c BUZ357

    transistor et 455

    Abstract: transistor et 454
    Text: N AMER PHI LI PS/ DI SCRETE DbE D PowerMOS transistor • bb53*131 0D147bb 7 ■ BCZ3$ l f - ~ _ 3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF 0D147bb T0218AA; 00147bT T-39-13 BUZ351 001477E transistor et 455 transistor et 454

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE : ObE D PowerMOS transistor • bb53131 0014651 S ■ BUZ310 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF bb53131 BUZ310 T0218AA; T-39-11 bbS3T31 T-39-H

    T0247AC

    Abstract: IRG4PC50FD T0-220AB bup314 T0-247AC bup314d IRG4BC40U T0220AB IRG4PC50UD BUP212
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 electronics CunoBbie TpaH3MCTopbi IGBT copTMpoBKa no HanpflweHMro UCE TpaH3Mcrop IGBT (Insulated Gate Bipolar Transistor) npeflCTaBrmeT c o 6 om 6 M n o r m p H b iM T p a H 3 M C T o p c M3 o n M p o B a H H H M 3 a T B o p o M , y n p a B r m e M b iM H a n p a ^ e H M e M . O h x a p a K T e p M 3y e T c a b h c o k m m


    OCR Scan     		PDF B03M0WH0CTb npe06pa30Baiennx paUP212 T0220AB BUP213 BUP313 T0218AB BUP313D T0247AC IRG4PC50FD T0-220AB bup314 T0-247AC bup314d IRG4BC40U T0220AB IRG4PC50UD BUP212

    IGBT 200A 1200V

    Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D


    OCR Scan     		PDF bup203 t0220) BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s IGBT 200A 1200V T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40

    BT808

    Abstract: Q2006L5 Triac SC141D TFK 609 TO810MH triac tic236m Q2006R5 Q4025V5 Q6040 T0505NH
    Text: LORAS INDUSTRIES INC 42E D 5500440 DOOOODt. T IL O R A “T - 2 5 ' O Î TRIAC ITrms PART No. VDRM Volts PACKAGE Amps IDRM mAmps IGT Q2 Q3 mAmps Q1 VGT Volts Q4 Ih mAmps VTM Volts ITM Amps 0.6 Amps ITrms T O -92 Package MAC974 0.6 0.6 MAC976 MACÔ7& 0.6: MAC97A3 "•


    OCR Scan     		PDF -T-25-0Ã MAC974 MAC976 MAC97AÂ MAC97A6 MAC97A8 SC92B T0218AC BTB41200B BT808 Q2006L5 Triac SC141D TFK 609 TO810MH triac tic236m Q2006R5 Q4025V5 Q6040 T0505NH

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


    OCR Scan     		PDF

    BUZ356

    Abstract: T0218AA BUZ-356
    Text: N AMER PH IL IP S/D ISCRETE ObE D PowerMOS transistor • =.1353^31 DQ14SH2 S BUZ356 * r= -5 l-i3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUZ356 T0218AA; BUZ356 T-39-13 T0218AA BUZ-356

    BUZ348

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ObE PowerMOS transistor D • tab S 3 e]31 0014730 BUZ348 . T - 3 < M " 3 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF 001M73Ã BUZ348 T0218AA; T-39-13 BUZ348

    BUZ350

    Abstract: IY TRANSISTOR BUZ35 at ma hi mvs
    Text: N AUER P H I L I P S / D I S CR E TE DfaE D PowerMOS transistor ^ 53=131 0 0 1 4 7 5 2 7 BUZ350 T-3^-/3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUZ350 T0218AA; T-39-13 BUZ350 IY TRANSISTOR BUZ35 at ma hi mvs