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    PEI Genesis PT06A14-12SW

    PT 12C 4#16,8#20 SKT PLUG
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    DigiKey PT06A14-12SW Bulk 389 1
    • 1 $35.18
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    PT06A14-12SW Bulk 194 1
    • 1 $33.43
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    PEI Genesis PT06A12-14P-SR

    PT 14C 14#20 PIN PLUG
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    DigiKey PT06A12-14P-SR Bag 218 1
    • 1 $36.47
    • 10 $31.61
    • 100 $21.88
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    PEI Genesis PT06A12-8SZ-470

    PT 8C 8#20 SKT PLUG
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    DigiKey PT06A12-8SZ-470 Bulk 111 1
    • 1 $36.24
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    PEI Genesis PT06A12-10PX-470

    PT 10C 10#20 PIN PLUG
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    DigiKey PT06A12-10PX-470 Bulk 111 1
    • 1 $35.48
    • 10 $30.75
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    Amphenol Industrial Operations PT06A-12-10S(470)

    CONN PLUG FMALE 10P SOLDER CUP
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    DigiKey PT06A-12-10S(470) Bulk 90 1
    • 1 $39.54
    • 10 $30.574
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    RS PT06A-12-10S(470) Bulk 13 6 Weeks 1
    • 1 $38.1
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    Master Electronics PT06A-12-10S(470) 30
    • 1 $40.16
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    T06A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    orca

    Abstract: signal path designer
    Text: Application Note June 1997 ORCA FPGAs Integrate Datacom’s Paths Introduction Traditional datacom applications have largely relied on discrete logic components for such supporting circuits as data registers; first-in, first-outs FIFOs ; last-in, first-outs (LIFOs); control; and data paths.


    Original     		PDF AP97-012FPGA AP95-006FPGA) orca signal path designer

    marking t08i

    Abstract: FR07 APC 2020 B I326 T08G A200000 ti01h BTS 7246 I342 T3.15A 250V
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF whatsoeveF0000­ FFFFE000­ SH7055 E8000 HS7055EDD81H marking t08i FR07 APC 2020 B I326 T08G A200000 ti01h BTS 7246 I342 T3.15A 250V

    T06A-XX-XXX

    Abstract: A 1266 PT06W PT06E-XX-XXX
    Text: PT06 MS3116 SP06 straight plug TERMINATION ASSEMBLIES “ A " General Duty 'A '' (SR), “ E" (SR), " P ” (SR), M S /"F " Strain Relief “ W ” Cable Seal ‘P” P otting Boot “ E” Open Wire Seal N P T06A-XX-XXX (SR) SP 06A-XX-XXX (SR) P TG 06A-XX-XXX (SR)


    OCR Scan     		PDF MS3116) PT06A-XX-XXX SP06A-XX-XXX T06A-XX-XXX PT06E-XX-XXX SP06E 06E-XX-XXX PT06P-XX-XXX SP06P-XX-XXX 06P-XX-XXX T06A-XX-XXX A 1266 PT06W PT06E-XX-XXX

    42S421

    Abstract: I2758 uPD424210-60-G eZ 752 SCZ7 NEC Japan 424210-60 7PP4
    Text: PRELIMINARY DATA SH EET_ / M O S IN T E G R A T E D CIRCUIT ¿/PD42S4210-60-G,424210-60-G 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The ¿/PD42S4210-60-G,424210-60-G is 262 144 words by 16 bits dynamic CM OS RAMs with optional


    OCR Scan     		PDF uPD42S4210-60-G uPD424210-60-G 16-BIT, pPD42S4210-60-G 424210-60-G 44-pin 40-pin /PD42S4210-60-G 42S421 I2758 eZ 752 SCZ7 NEC Japan 424210-60 7PP4

    nec 424800

    Abstract: ic 2716 ic2716 PD42S4800-70 424800-10 424800-80 TXXXXXXXXXX
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT jU P D 4 2 S 4 8 0 0 , 4 2 4 8 0 0 4 M -BIT D Y N A M IC R A M 512 K -W O R D B Y 8-BIT, F A S T P A G E M O D E D e s c rip tio n The /¿PD42S4800, 424800 are 524,288 words by 8 bits CMOS dynamic RAMs. The fast page mode capability


    OCR Scan     		PDF uPD42S4800 uPD424800 PD42S4800 28-pin /iPD42S4800-60, PD42S4800-70, PD42S4800-80, PD42S4800-10, VP15-207-2 nec 424800 ic 2716 ic2716 PD42S4800-70 424800-10 424800-80 TXXXXXXXXXX

    6400L-A5G

    Abstract: d4216400
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿¿PD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD B Y 4-BIT, F A S T P A G E M ODE Description The /iPD42S16400L, 4216400L, 42S17400L, 4217400L are 4,194,304 words by 4 bits CMOS dynamic RAMs. The


    OCR Scan     		PDF uPD42S16400L uPD4216400L uPD42S17400L uPD4217400L /iPD42S16400L, 4216400L, 42S17400L, 4217400L JUPD42S16400L, 42S17400L 6400L-A5G d4216400

    wj da11 pin

    Abstract: 22TCW
    Text: •HYUNDAI H Y 5 1 1 6 1 6 0 B S e r ie s 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5116160B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116160B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF 16-bit HY5116160B 16-bit. 1AD53-10-MAY95 HY5116160BJC HY5116160BSLJC HY5116160BTC wj da11 pin 22TCW

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    Untitled

    Abstract: No abstract text available
    Text: “H Y U N D A I H Y 5 1 V 4 4 0 0 B S e r ie s 1 M x 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V4400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY51V4400B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V4400B HY51V4400B 1AC12-00-MAY94 HY51V4400BJ HY51V4400BU HY51V4400BSU HY51V4400BT HY51V4400BLT

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 4 4 0 0 B " H Y U N D A I S e r ie s 1M x 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY514400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY514400B 1AC11-00-MAY94 4b75Gflfl HY514400BJ HY514400BU HY514400BSU HY514400BT

    Untitled

    Abstract: No abstract text available
    Text: KM416V256B/BL/BLL CMOS DRAM 256K x1 6 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • P erform ance range: The Samsung KM416V256B/BL7BL1 is a CMOS high speed 262,14 4 b it \ 16 D ynam ic R andom A cce ss M e m ory. Its d e s ig n is o p tim iz e d fo r iow p o w e r


    OCR Scan     		PDF KM416V256B/BL/BLL KM416V256B/BL7BL1 KM416V256B/BIVBLL-6 110ns KM416V256B/BIVBLL-7 130ns KM416V256B/BL7BLL-8 150ns KM416V256B/B

    pw3sd

    Abstract: No abstract text available
    Text: - H Y U N D A HY514403B Series I 1M x 4-bit CMOS DRAM with 4CAS DESCRIPTION The HY514403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CASO) controls DQO,


    OCR Scan     		PDF HY514403B 1AC15-10-MAY95 HY514403BJ HY514403BLJ HY514403BSLJ pw3sd

    Untitled

    Abstract: No abstract text available
    Text: D A TA SHEET NECE MOS INTEGRATED CIRCUIT /¿PD42S4260, 424260 4 M BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The /¿PD42S4260, 424260 are 262 144 words by 16 bits dynamic CMOS RAMs w ith optional fast page mode and byte read/write mode.


    OCR Scan     		PDF PD42S4260, 16-BIT, /1PD42S4260. iPD42S4260 PD424260 44-pin 40-pin VP15-207-2

    Untitled

    Abstract: No abstract text available
    Text: CMOS 512K 64K x 8 Pseudo^Static RAM FEATURES • 66,536 x 8 bit organization • Access time: 80 ns (MAX.) • Cycle time: 140 ns (MIN.) • Single -»5 V power supply • Power consumption: Operating: 440 mW (MAX.) Standby (TTL level): 22 mW (MAX) Standby (CMOS level): 2.75 mW (MAX.)


    OCR Scan     		PDF 32-PIN 32-pin, 525-mil 32S0P 525-mH LH5P864 I-------80

    plastite screw

    Abstract: No abstract text available
    Text: T DRAWING REVISIONS DOCUMENT REV APP DATE RELEASE FOR P RO D U C T I O N D.O. # 0 1 - 1 4 0 7 TO HOUSING I .464 [ 3 7 . ¡8] OVER NSULATOR <LOF 2 REF MATCH CPU DIE DRAFT 1 . 150 29.21] MTG HOLE . 166 [4.22] PCB MTG S U R F A C E TO T ER M I N A L ENDS PANEL


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs M 5 M 5 1 T 0 8 A F P ,V P ,R V -1 2 V S L ,-1 5 V S L _1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM No«-0 ‘ ¿met'* r': DESCRIPTION The M5M51 T08AFP,VP,RV are a 1048576-bit CMOS static RAM organized as 131072-word by 8-bit which are fabricated using


    OCR Scan     		PDF 1048576-BIT 131072-WORD M5M51 T08AFP 1048576-bit

    D482234

    Abstract: No abstract text available
    Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT //PD482234, 482235 2M-Bit Dual Port Graphics Buffer 256K-WORD BY 8-BIT D escription The jiPD482234 and /iPD482235 have a random access port and a serial access port. The random access port has a 2M-bit 262,144 words x 8 bits memory cell array structure. The serial access port can perform clock operations


    OCR Scan     		PDF uPD482234 uPD482235 256K-WORD jiPD482234 /iPD482235 /tPD482235 PP482234. b427525 00b3flfl3 UPD482234. D482234

    D482234

    Abstract: D482234G5-70 d482235le D482235 icc20 sis 735 k7 TNC 24 mk 2 d482235g5-60 SES N 2402
    Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT //PD482234, 482235 2M-Bit Dual Port Graphics Buffer 256K-WORD BY 8-BIT D escription The jiPD482234 and /iPD482235 have a random access port and a serial access port. The random access port has a 2M-bit 262,144 words x 8 bits memory cell array structure. The serial access port can perform clock operations


    OCR Scan     		PDF uPD482234 uPD482235 256K-WORD jiPD482234 /iPD482235 /tPD482235 PP482234. b427525 00b3flfl3 UPD482234. D482234 D482234G5-70 d482235le D482235 icc20 sis 735 k7 TNC 24 mk 2 d482235g5-60 SES N 2402

    dd417

    Abstract: No abstract text available
    Text: 'd a t a b427525 GÜM17SE ST2 « N E C E NEC sh eet MOS INTEGRATED CIRCUIT f juPD42S4260L, 424260L 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The /¿PD42S4260L, 424260L are 262 144 words by 16 bits dynamic CMOS RAMs with optional fast page mode


    OCR Scan     		PDF b427525 M17SE juPD42S4260L 424260L 16-BIT, PD42S4260L, 424260L /1PD42S4260L. PD42S4260L //PD424260L dd417

    HY5117404A

    Abstract: HY5117404AJ60 HY5117404ASLT60 AMO 0210 1A038 VH77 AHC28 HY5117404 hy5117
    Text: “H Y U N D A I HY5117404A Series 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5117404A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117404A utilizes Hyundai’s CM OS silicon gate process technology as w ell as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5117404A 1AD38-10-MAY95 0D45DG HY5117404AJ HY5117404ASLJ HY5117404AT HY5117404AJ60 HY5117404ASLT60 AMO 0210 1A038 VH77 AHC28 HY5117404 hy5117