T1J 30 Search Results

Contextual Info: N AMER PHILIPS/DISCRETE Philips Semiconductors_ b'lE ]> bbS3^31 DDBbS^b STT » A P X _ Preliminary specification Very fast soft-recovery rectifier diodes DESCRIPTION Glass passivated rectifier diodes in hermetically sealed SOD81 glass

Contextual Info: Wi5ePjwer FPC/FFC connector Right Angle / ZIF / Upper Contact 1.Omm SMT/Low Profile 1.2mm H I BL117-DDRU Features Electrical Spec Low Profile body high 1.2mm Easy and fast to assembly Temperature -20’C to + 8 5 'C Current: 0.4Amp Max. Voltage : 50VAC Max.

s 2 umi 1A 250V

Abstract: umi 150 5A 250V umi 5A 250V 2SC2979 1J1ST
Contextual Info: Æ&m o s p e c HIGH-VOLTAGE HIGH-SPEED POWER TRANSISTORS . designed for use in high-voltage,high-speed,power switching in inductive circuit,motor control,solenoid and relay drivers. FEATURES: * Collector-Emitter Sustaining VoltageV C E O s u s = 800 V (Min)

S20S100

Abstract: S20S70 S20S80 S20S90
Contextual Info: Sk MOSPEC S20S70 Thru S20S100 SWITCHMODE POWER RECTIFIERS d 2 pak SCHOTTKY BARRIER RECTIFIERS surface mount pow er package The D2 PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features:

CSA10

Abstract: CD4069UBE M30800MC TCD-99-6C09
Contextual Info: Technical Data of Ceramic Resonator Type CSA10.0MTZ CST10.0MTW Applied to M30800MC HP-mode TOYAMA MURATA MANUFACTURING CO., LTD. Product Engineering Service Section I Planning Department Piezoelectric Components Group Approved by Checked by Checked by S.Iwasaki

NSCM

Contextual Info: vu m LF Un m O lû It g m m - NO. © s& NAME K -z ? - 7 " CTRADE MARK) C5ECT3 *£ ! 1. 2. * * ) * « » 3. 3.5 14.6 1 C TABLE 1 5 l^- /0\k B : 179939-u : 17791 4 - C i , 17791 5-C 4. Sit A «.*» i 108-5410 W * * (MATERIAL) A (HEADER HOUSING) « 2 4 » A*

transistor T1J

Abstract: T1J marking
Contextual Info: Philips Semiconductors Product specification NPN switching transistor PMST2369 FEATURES PINNING • Low current max. 200 mA PIN • Low voltage (max. 15 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • High-speed switching applications, primarily in portable

D44R4

Abstract: D44R2 D40N5 D44R8 D40N1 D40N2 D40N3 D40N4 D40P1 D40P3
Contextual Info: SILICON POWER TRANSISTORS NPN HIGH VOLTAGE GE Type Pt rc = 25°C M ax. W D40N1 D40N2 D40N3 D40N4 6.25 6 .2 5 6.25 6 .2 5 v CEO M in. (V) 6.25 120 D40P3 6 .2 5 180 D42R2 D 42R 3 D42R4 15 225 250 300 15 15 250 15 60 300 D40P1 D42R I 30 300 375 6 .2 5 60 250

MSM534020B

Contextual Info: O K I Semiconductor MSM534020B 262,144-Word x 16-Bit Mask ROM DESCRIPTION lue? ^ ^ 020B iS 3 hlgh_SPeed silicon 8ate CMOS Mask ROM with 262,144-word x 16-bit capacity. The MSM534020B operates on a single 5.0 V power supply and is TTL compatible. The chip's asynchro­

TEA-1035

Abstract: TEA1035
Contextual Info: DATA SHEET NEC 1 COMPOUND FIELD EFFECT POWER TRANSISTOR PA1576 N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION T he itzPA1576 is N-channel P ow er M O S FET A rray that built in 4 circuits designed for solenoid, m otor and lamp driver. FEATURES • 4 V driving is possible

c4153

Abstract: 132 triacs
Contextual Info: Preliminary specification Philips Semiconductors Triacs BT132 series D logic GENERAL DESCRIPTION Glass passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase

BDX33c equivalent

Abstract: P6019 BDX33D equivalent X33B BDX33 69-6R
Contextual Info: BDX33, BDX33A, BDX33B, BDX33C, BDX33D HARRIS SEMICOND SECTOR SbE D File Number • 4 3 0 2 8 7 1 O D M O b l l S34 « H A S 10-Ampere N-P-N Darlington Power Transistors 7 ^ 3 3 TERMINAL DESIGNATIONS 45-60-80-100-120 Volts, 70 Watts Gain of 750 at 4 A B DX33, BDX33A

BYV96E

Abstract: BYV96D
Contextual Info: N AMER PHILIPS/DISCRETE b'ìE T> m bb S B ' m GDEbbTO 174 • APX BYV96D BYV96E A AVALANCHE FAST SOFT-RECOVERY RECTIFIER DIODES Glass passivated re c tifie r diodes in h e rm e tica lly sealed axial-leaded glass envelopes. T h e y are intended fo r television and in d u stria l applications, such as sw itched-m ode p o w e r supplies, scan

nesg2101m05-t1-a

Abstract: NESG2101M05-A
Contextual Info: A Business Partner of Renesas Electronics Corporation. NESG2101M05 Data Sheet NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW Flat-Lead 4-Pin Thin-Type Super Minimold (M05) R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • • • •

C175

Contextual Info: PART NUMBER UNCONTROLLED DOCUMENT 1.00 [0.033] MAX. REV. LCD-H6X2M70TF-1 REV. A B C 101.60 [4.000] 96.60 [3.803] V.A. 92.60 [3.646] I.A. 76 E.C.N. E.C.N. E.C.N. E.C.N. NUMBER AND REVISION COMMENTS # 1099 8 . # 1101 5 . # 1114 8 . • l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l

5V RELAY 8pin

Abstract: KAQW414S 12V RELAY 1 C/O cosmo 010 AGT relay
Contextual Info: PRODUCT SPECIFICATION DATE:05/15/2003 NO. 62M21002 PHOTO 'MOS RELAYS: cosm o ELECTRONICS CORPORATION KAQW414S REV. 1 SHEET 1 OF 7 OUTSIDE DIMENSION Unit:mm Tolerance:! 0. 2 mm Operate/Reverse time DUAL 1 FORM B NORMALLY CLOSED Input Output • - 10« “ X

marking code p07 sot89

Abstract: marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F
Contextual Info: MARKING CODES Page T y p e n u m b e r to m arking c o d e c ro s s re fe re n ce 68 M ark in g co d e to type n u m b er c ro s s re fe re n ce 74 Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER I MARKING

doc-70

Abstract: c431a
Contextual Info: O K I Semiconductor MSM27C431AZB 524,288-Word x 8-Bit Low-Voltage One Time PROM D E S C R IP T IO N The MSM27C431AZB is a 4 Mb electrically Programmable Read-Only Memory organized as 524 288 t h e S M 27C43 1 A ^ SM27C^31AZB °P erates on a single 3.3 V power supply and is TTL compatible. Since

AMP 7-338069-6

Abstract: iec 286 EH0I-0970-03
Contextual Info: TH I 5 DRAWING I S UNPUBLI SHED. Dl ST LOC C COPYRIGHT - by Tyco EEtecHrrctnics Nederland EB.V- REV I S IONS ALL RIGHTS RESERVED. DESCRIPTION LTR ECN EH0I-0970-03 EH01-0232-04 D APVD DATE 27-08-03 EL 16 FEB 04 EL 1ATAPE FOR VACUUM PICK AND PLACING NOTES:

Contextual Info: MIC2920A/29201 29202 29204 400m A Low-Dropout Voltage Regulator General Description Features High output voltage accuracy Guaranteed 400mA output Low quiescent current Low dropout voltage Extremely tight load and line regulation Very low temperature coefficient

transistor T1J

Abstract: NESG2101M05-T1 NESG2101M05
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification

Contextual Info: 74ALVCH162244 16-bit buffer/line driver with 30Q termination resistor 3-State Product specification 1998 Jun 29 IC24 Data Handbook Philips Semiconductors PHILIPS Philips Semiconductors Product specification 16-bit buffer/line driver with 30ft termination resistor

JTs smd diode

Abstract: TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE smd transistor marking p3 12A p transistor smd 12A transistor smd SMD TRANSISTOR 12a smd transistor marking 1j transistor smd sG SMD TRANSISTOR MARKING P2 STTA1206D/DI/G
Contextual Info: rz7 SGS-THOMSON ^ 7 # M O œ iL E O T M Û S S T T A 1206G TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f av 12A V rrm 600V trr (typ) 28ns Vf (max) 1.5V FEATURES AND BENEFITS • SPECIFIC TO ’’FREEWHEEL MODE” OPERA­

circuit diagram of FTA receiver

Abstract: DS8833 DS8833J 5H41
Contextual Info: NATL SEtllCO ND -CNEflORY} I DE D | b S O lia b □ D b 5 b 3 ci Ö | O V '«I 09 W CO •'«. CO -si T-52-31 National Semiconductor 00 DS7833/DS8833/DS7835/DS8835 Quad TRI-STATE Bus Transceivers W 01 o in 00 00 W CJ General Description Features This family of TRI-STATE bus transceivers offers extreme