nesg2101m05-t1-a
Abstract: NESG2101M05-A
Text: A Business Partner of Renesas Electronics Corporation. NESG2101M05 Data Sheet NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW Flat-Lead 4-Pin Thin-Type Super Minimold (M05) R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • • • •
|
Original
|
PDF
|
NESG2101M05
R09DS0036EJ0300
NESG2101M05
PU10190EJ02V0DS
nesg2101m05-t1-a
NESG2101M05-A
|
transistor T1J
Abstract: NESG2101M05-T1 NESG2101M05
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification
|
Original
|
PDF
|
NESG2101M05
PU10190EJ02V0DS
transistor T1J
NESG2101M05-T1
NESG2101M05
|
Untitled
Abstract: No abstract text available
Text: Data Sheet NESG2101M05 NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW Flat-Lead 4-Pin Thin-Type Super Minimold (M05) R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification
|
Original
|
PDF
|
NESG2101M05
R09DS0036EJ0300
|
transistor T1J
Abstract: NESG2101M05-T1 NEC NESG2101M05 NESG2101M05 MICROWAVE TRANSISTOR T1J marking
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
PU10190EJ02V0DS
NESG2101M05
transistor T1J
NESG2101M05-T1
NEC NESG2101M05
NESG2101M05
MICROWAVE TRANSISTOR
T1J marking
|
Untitled
Abstract: No abstract text available
Text: WILLAS FM120-M+ THRU SRK7002LT1 FM1200-M+ Small Signal MOSFET Silicon N-Channel 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers
|
Original
|
PDF
|
OD-123+
FM120-M+
SRK7002LTHRU
FM1200-M+
OD-123H
FM120-MH
FM130-MH
FM140-MH
FM150-MH
FM160-MH
|
D73 MAIDA
Abstract: D6544ZOV D6544 RS-468
Text: TAPE AND REEL • TAPE AND REEL SERIES INTRODUCTION Maida zinc-oxide varistors are also available in ammo pack or Tape and Reel packaging formats. Generally, through-hole varistors with a lead spacing of 0.394 inches and a nominal disk diameter of 20mm can be taped. All components of the
|
Original
|
PDF
|
RS-468.
requir15
D73 MAIDA
D6544ZOV
D6544
RS-468
|
Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE Philips Semiconductors_ b'lE ]> bbS3^31 DDBbS^b STT » A P X _ Preliminary specification Very fast soft-recovery rectifier diodes DESCRIPTION Glass passivated rectifier diodes in hermetically sealed SOD81 glass
|
OCR Scan
|
PDF
|
BYD43-20
S0D81.
|
s 2 umi 1A 250V
Abstract: umi 150 5A 250V umi 5A 250V 2SC2979 1J1ST
Text: Æ&m o s p e c HIGH-VOLTAGE HIGH-SPEED POWER TRANSISTORS . designed for use in high-voltage,high-speed,power switching in inductive circuit,motor control,solenoid and relay drivers. FEATURES: * Collector-Emitter Sustaining VoltageV C E O s u s = 800 V (Min)
|
OCR Scan
|
PDF
|
2SC2979
s 2 umi 1A 250V
umi 150 5A 250V
umi 5A 250V
2SC2979
1J1ST
|
S20S100
Abstract: S20S70 S20S80 S20S90
Text: Sk MOSPEC S20S70 Thru S20S100 SWITCHMODE POWER RECTIFIERS d 2 pak SCHOTTKY BARRIER RECTIFIERS surface mount pow er package The D2 PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features:
|
OCR Scan
|
PDF
|
S20S70
S20S100
O-22Q
S20S90
S20S100
S20S80
S20S90
|
CSA10
Abstract: CD4069UBE M30800MC TCD-99-6C09
Text: Technical Data of Ceramic Resonator Type CSA10.0MTZ CST10.0MTW Applied to M30800MC HP-mode TOYAMA MURATA MANUFACTURING CO., LTD. Product Engineering Service Section I Planning Department Piezoelectric Components Group Approved by Checked by Checked by S.Iwasaki
|
OCR Scan
|
PDF
|
M30800MC
TCD-99-6C09
CSA10
M30B00MC
CD4069UBE
CD4069UBE
TCD-99-6C09
|
NSCM
Abstract: No abstract text available
Text: vu m LF Un m O lû It g m m - NO. © s& NAME K -z ? - 7 " CTRADE MARK) C5ECT3 *£ ! 1. 2. * * ) * « » 3. 3.5 14.6 1 C TABLE 1 5 l^- /0\k B : 179939-u : 17791 4 - C i , 17791 5-C 4. Sit A «.*» i 108-5410 W * * (MATERIAL) A (HEADER HOUSING) « 2 4 » A*
|
OCR Scan
|
PDF
|
Mfct94v-0J
179939-u
179939-u
100AY
NSCM
|
D44R4
Abstract: D44R2 D40N5 D44R8 D40N1 D40N2 D40N3 D40N4 D40P1 D40P3
Text: SILICON POWER TRANSISTORS NPN HIGH VOLTAGE GE Type Pt rc = 25°C M ax. W D40N1 D40N2 D40N3 D40N4 6.25 6 .2 5 6.25 6 .2 5 v CEO M in. (V) 6.25 120 D40P3 6 .2 5 180 D42R2 D 42R 3 D42R4 15 225 250 300 15 15 250 15 60 300 D40P1 D42R I 30 300 375 6 .2 5 60 250
|
OCR Scan
|
PDF
|
500mA
D40N1
D40N2
D40N3
D40N4
D40N5
D40P1
D40P3
D40P5
D42RI
D44R4
D44R2
D44R8
|
MSM534020B
Abstract: No abstract text available
Text: O K I Semiconductor MSM534020B 262,144-Word x 16-Bit Mask ROM DESCRIPTION lue? ^ ^ 020B iS 3 hlgh_SPeed silicon 8ate CMOS Mask ROM with 262,144-word x 16-bit capacity. The MSM534020B operates on a single 5.0 V power supply and is TTL compatible. The chip's asynchro
|
OCR Scan
|
PDF
|
MSM534020B
144-Word
16-Bit
MSM534020B
|
TEA-1035
Abstract: TEA1035
Text: DATA SHEET NEC 1 COMPOUND FIELD EFFECT POWER TRANSISTOR PA1576 N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION T he itzPA1576 is N-channel P ow er M O S FET A rray that built in 4 circuits designed for solenoid, m otor and lamp driver. FEATURES • 4 V driving is possible
|
OCR Scan
|
PDF
|
PA1576
itzPA1576
PA1576H
IEI-1209)
TEI-1202
MEI-1202
IEI-1207
TEA-1034
TEA-1035
TEA-1035
TEA1035
|
|
|
D44R4
Abstract: D44R2 D44R8 D44R1 D44R3 D44R7 D44R D44R5 D44R6
Text: Silicon Power Pac Transistors HIGH VOLTAGE The General Electric D44R is a red, silicone encapsulated, power transistor designed for various specific and general purpose applications such as: 120 V.A.C. line operated amplifiers; series, shunt and switching regulators; low thru high frequency inverters/
|
OCR Scan
|
PDF
|
T0-220
D44R4
D44R2
D44R8
D44R1
D44R3
D44R7
D44R
D44R5
D44R6
|
5V RELAY 8pin
Abstract: KAQW414S 12V RELAY 1 C/O cosmo 010 AGT relay
Text: PRODUCT SPECIFICATION DATE:05/15/2003 NO. 62M21002 PHOTO 'MOS RELAYS: cosm o ELECTRONICS CORPORATION KAQW414S REV. 1 SHEET 1 OF 7 OUTSIDE DIMENSION Unit:mm Tolerance:! 0. 2 mm Operate/Reverse time DUAL 1 FORM B NORMALLY CLOSED Input Output • - 10« “ X
|
OCR Scan
|
PDF
|
KAQW414S
62M21002
W414S
5V RELAY 8pin
KAQW414S
12V RELAY 1 C/O
cosmo 010
AGT relay
|
doc-70
Abstract: c431a
Text: O K I Semiconductor MSM27C431AZB 524,288-Word x 8-Bit Low-Voltage One Time PROM D E S C R IP T IO N The MSM27C431AZB is a 4 Mb electrically Programmable Read-Only Memory organized as 524 288 t h e S M 27C43 1 A ^ SM27C^31AZB °P erates on a single 3.3 V power supply and is TTL compatible. Since
|
OCR Scan
|
PDF
|
MSM27C431AZB
288-Word
MSM27C431AZB
7Cf31
MSM27-
C431AZB
32-pin
MSM27C421ZB)
doc-70
c431a
|
Untitled
Abstract: No abstract text available
Text: MIC2920A/29201 29202 29204 400m A Low-Dropout Voltage Regulator General Description Features High output voltage accuracy Guaranteed 400mA output Low quiescent current Low dropout voltage Extremely tight load and line regulation Very low temperature coefficient
|
OCR Scan
|
PDF
|
MIC2920A/29201
400mA
IC29202/MIC29204)
T0-220,
O-220-5,
O-263-5,
OT-223,
MIC2920A
370mV
O-263-5
|
Untitled
Abstract: No abstract text available
Text: S ilic o n T ra n s is to r 2SD1950 N P N x t 7 + y 7 ; i/ i> i& m ì& w tìim u m -> > 9 1-9 4 2 S D 1950 Ü , hFK \ ÿ ' y :J 7 , 9 T , 1 / ^ 9 m a M J ± T , M tl o ^ ' P ^ ^ t z n b , | 3 {&mWMJ±T<r>*: ')u-, ? > r i p c o ; * æ s K 7 4 y"m t L -9, ft
|
OCR Scan
|
PDF
|
2SD1950
|
Untitled
Abstract: No abstract text available
Text: TAPE AND REEL INTRODUCTION M aida zinc-oxide varistors are also available In a m m o pack or Tape and Reel packaging form ats. Generally, through-hole varistors w ith a lead spacing o f 0.394 inches and a nom inal disk dia m e te r o f 20 m m can be taped. All c o m p o n e n ts o f the
|
OCR Scan
|
PDF
|
RS-468.
|
Untitled
Abstract: No abstract text available
Text: blE 1324*1025 D O I W O 3bT • M I T I MITSUBISHI LSIs M5M5189AP, J-25,-35,-45,-55 6 5 5 3 6 -B IT 16384-W O R D BY 4 -B IT CMOS STATIC RAM MITSUBISHI (MEMORY/ASIC) DESCRIPTION This is a family of 16384 word by 4-bit static RAMs, fabri cated with the high-performance CMOS silicon-gate MOS
|
OCR Scan
|
PDF
|
M5M5189AP,
6384-W
5M5189AP,
b241fi25
384-W
|
7MBP50NA060-01
Abstract: u4100
Text: - iL - y W m 'O h S Fuji New Semiconductor Products 600V / 50A / 7 fUM 7MBP50NA060-01 If# H Features 7 V7 I* — £ v ju [1 i f a i l ' t t Low switching-surge and noise Low power loss H gh reliability I Maximum ratings and characteristics Absolute maximum ratings
|
OCR Scan
|
PDF
|
7MBP50NA060-01
7MBP50NA060-01
u4100
|
2N1227
Abstract: 2M214 2N1202 1j63 2N2148 2NS40 2N511 2N176 2N236A 2N420
Text: . •■_ m Môb^EMb 0 0 0 0 2 1 3 0 H 7 ^ ;3 3 " ° ¡ JE iT lltrO n SEMICONDUCTORS SemitronicsCorp. INTEX/ SENITRONICS CORP 27E D germanium transistors cont’d germ anium power transistors T»P» Polarity Power D issipation
|
OCR Scan
|
PDF
|
2N155
2N156
2N158
2N158A
2N173
T0-13
2N174
2N176
2N234A
2N1227
2M214
2N1202
1j63
2N2148
2NS40
2N511
2N236A
2N420
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TLCS-47 Series TMP47P454V CMOS 4-Bit Microcontroller The 47P454V is the OTP microcontroller with 32kbits PROM. For program operation, the programming is achieved by using with EPROM programmer TMM2764AD type and adapter socket (BM1119). AC/DC characteristics are equivalent to
|
OCR Scan
|
PDF
|
TLCS-47
TMP47P454V
47P454V
32kbits
TMM2764AD
BM1119)
TMP47P454VN
SDIP30
BM1119
|
