T1P42C
Abstract: T1P-42C 53a33 2sb85 T1P42A T1P32B T1P32A
Text: POWER PACKAGE TRANSISTORS PNP M axim um R atin gs E lectrical C h aracte ristics VCE0 v EBO PD 'CBO « v CB (V) (V) (W) (V) Un Mn Mn a Tc=25°C MJE350T 300 300 3 21 100 300 30 240 0.05 10 2SA940 150 150 5 25 10 120 40 140 0.50 10 1.5 BD240C 115 100 5 30
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MJE350T
2SA940
BD240C
BD242C
2SB856A
2SB856C
BD242
BD244
TIP32
TIP42
T1P42C
T1P-42C
53a33
2sb85
T1P42A
T1P32B
T1P32A
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TIP418
Abstract: T1P31C T1P32C tip120 to-220 npn darlington
Text: SELECTION GUIDE BY PART NUMBER DEVICE TYPE VcEO NPN PNP V ST13005 ST13007 STD909T4 STD910T4 THD200FI THD215HI THD218DHI THD277HI TIP29A TIP29B TIP29C TIP30A TIP30B TIP30C TIP31A T1P31C TIP32A TIP32B TIP32C TIP33A TIP33C TIP34C TIP35C TIP36B TIP36C TIP41A
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ST13005
ST13007
STD909T4
TIP42B
TIP42C
TIP47
TIP48
TIP49
TIP50
TIP100
TIP418
T1P31C
T1P32C
tip120 to-220 npn darlington
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transistor 13003 AD
Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)
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OT-23
KST06
KST05
KSC1623
BCW71
BCX70G
BCX70H
BCX70J
BCX70K
BCX71G
transistor 13003 AD
ksd-180
HF 13003
KSD180
13003 HF
KSD168
KSD966
ksd-168
PNP NPN Transistor VCEO 120V 100V Ic 7A
KSC 1.5k 250v
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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BPW22A
Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey
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BS9000,
D3007
HE4000B
80RIBUTION
BS9000
BPW22A
cm .02m z5u 1kv
pin configuration of BFW10
la4347
B2X84
TDA3653 equivalent
TRIAC TAG 9322
HEF40106BP equivalent
fx4054 core
dsq8
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Untitled
Abstract: No abstract text available
Text: INTRODUCTION PLASTIC ENCAPSULATED TRAN SISTO RS TRI ACS AND THYRISTO RS This catalogue provides technical descriptions and specifications on Plastic Power Semiconductors manufactured by Texas Instruments. From the earliest days o f transistors Sem iconductor C ircuit Designers have
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TIP31AF
Abstract: TIP31BF TIP31CF TIP31DF TIP31F TIP32BF TIP32DF TIP32F
Text: TIP32F; 32AF TIP32BF; 32CF TIP32DF SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors, each in a SOT186 envelope with an electrically insulated mounting base. They are intended for use in audio amplifier output stages, general purpose amplifiers, and high-speed
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TIP32F;
TIP32BF;
TIP32DF
OT186
TIP31F,
TIP31AF,
TIP31BF,
TIP31CF
TIP31DF.
TIP32F
TIP31AF
TIP31BF
TIP31DF
TIP31F
TIP32BF
TIP32DF
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T1P32
Abstract: transistor tip31 TIP32B T1P32/A TIP32 TIP32 applications TIP31
Text: TIP32; A TIP32B; C SILICON EPITAXIAL BASE POWER TRANSISTORS PIMP transistors in a plastic T 0 -2 2 0 envelope. They are intended for use in a wide range of power amplifiers and for switching applications. N PN complements are TIP31 series. Q U IC K R E F E R E N C E D A T A
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TIP32;
TIP32B;
T0-220
TIP31
TIP32
T0-220.
7Z82913
T1P32
transistor tip31
TIP32B
T1P32/A
TIP32
TIP32 applications
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t1p41
Abstract: T1P32C SAL 41B TTP32 T1P-32C TIP328 T1P32 transistor tip31 tip32C samsung T1P32B
Text: SAMSUNG S EMI C O NDU CT OR INC 14E TIP3T SEKIHhS D I 7^4142 000771t, 1 | TIP31/31A/31B/31C NPN EXITAXIAL SILICO N TRANSISTOR / f MEDIUM POWER LINEAR n SWITCHING APPLICATIONS • Complement to TIP32/32A/32B/32C ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic
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000771t,
TIP31/31
T1P32/32A/32B/32C
TIP31
TIP31A
TIP31B
TIP31C
t1p41
T1P32C
SAL 41B
TTP32
T1P-32C
TIP328
T1P32
transistor tip31
tip32C samsung
T1P32B
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Untitled
Abstract: No abstract text available
Text: TO-220 Power Package Transistors PNP Electrical Characteristics (Ta=25 C. Unless Otherwise Specified) Maximum Ratings Type No. TIP117 V C80 V CEO ^EBO (V) Min (V) Min (V) Min 100 100 5 pc (W) @Tc=25“c 50 <c (A) 2 *C80 (pA) Max 1000 @ (V) V.ÍS V CE (mA)
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O-220
TIP117
IP125
TIP126
TIP32
T1P32B
TIP42
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TIP3iC
Abstract: No abstract text available
Text: PANASONIC INDL/ELEK -CIO fe,=132852 0 0 1 0 4 2 7 1 I 12E D Silicon PNP Power Transistors r-3 3 -n TO-220 Package Absolute Maximum Ratings Ta=25°C Hem Symbol TIP32 TIP32A TIP32B T IP32C Unit V V V Collector-Base Voltage -VCBO 40 60 80 100 Collector-Emitter Voltage
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O-220
TIP32
TIP32A
TIP32B
IP32C
TIP31,
TIP31B,
500haracteristics
--B-50
35ffA
TIP3iC
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2SA532
Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
Text: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G
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057-2G
1611G
1620G
1621-2G
1623G
1641G
1N4001
1N4002
1N4004
1N4005
2SA532
BC109 BC184 BC549
BC317
2SC734 Y
MS181A
BC159 8
2SC876
TTP31A
ML78M06A
BC357
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Untitled
Abstract: No abstract text available
Text: TIP32; A TIP32B; C _ / V SILICON EPITAXIAL BA SE POWER TRANSISTORS PNP transistors in a plastic TO-220 envelope. They are intended for use in a wide range of power amplifiers and for switching applications. NPN complements are TIP31 series.
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TIP32;
TIP32B;
O-220
TIP31
TIP32
0034T21
D03MT22
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PNP 2SD
Abstract: T1P61 2N3055 2N3055SD 2N3054 2N3439 2N3440 2N3713 BD224 2N3715
Text: 1 SEMICONDUCTORS INC OTE D | fi!3bbSG 0D0DSÖ2 4 | Power Transistors •c D E V IC E Max v CEO M ax A v hFE M in / M a x <$ lç P O L A R IT Y Powered by ICminer.com A v CE sat M a x fti Iq V A »T M in p D (M a x) T C =25°C MHi W PACK AGE 2N 3054 2N 3055
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2N3054
2N3055
2N3055SD
2N3439
2N3440
2N3713
2N3714
2N3715
2N3716
2N3740
PNP 2SD
T1P61
BD224
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1n52408
Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
Text: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which
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301PT1115
302PT1115
303PT1115
311PT1110
312PTI110
319PTI110
327PTI110
351PT1115
353PT1115
1n52408
1N52428 zener
SFC2311
78M12HM
21L02A
54175
IRS 9530 transistor
10116dc
BB105G
962PC
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JE350
Abstract: je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55
Text: INDUSTRY STANDARD SGS-THOMSON BD135 BD136 BD137 BD138 BD139 BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 BD140 BD159 BD160 BD165 BD166 BD167 BD159 SGS-THOMSON PAGE NEAREST BD157 BD158 2N5878 BD437 BD438 BD439 BD440 BD441 BD442 BD237 BD238 BD168
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BD135
BD136
BD137
BD138
BD139
BD140
BD142
BD144
BD157
BD158
JE350
je180
MJ13004
TP33C
BD325
JE172
BDX48
JE340
bd160
BUT55
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T1P127
Abstract: T1P42C TIP3iC T1P-127 MJE350T 2SA940 BD240C BD242B BD242C MJE2S55T
Text: PO W ER P A C K A G E T R A N SIST O R S PNP M a x im u m R a t in g s Typ» No. VcBO Electrical C h a ra c te ris tic s « vCB « lc 4 VCE 00 hin VCE0 (V) Mn MJE350T 300 300 3 21 100 300 30 240 0.05 10 2SA940 150 150 5 25 10 120 40 140 0.50 10 1.5 BD240C
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MJE350T
2SA940
BD240C
BD242C
BD244C
2SB856
2SB856A
2SB856C
BD242
BD244
T1P127
T1P42C
TIP3iC
T1P-127
BD242B
MJE2S55T
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T1P32
Abstract: bd241 42bb
Text: f Z 7 SGS-THOMSON BD241/A/B/C BD242/A/B/C ^7# MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS D E S C R IP T IO N The BD241, BD241 A, BD241B and BD241C are si licon epitaxial-base NPN power transistors in Jedec TCi-220 plastic package, intended for use in medium
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BD241/A/B/C
BD242/A/B/C
BD241,
BD241
BD241B
BD241C
TCi-220
BD242,
BD242A,
BD242B
T1P32
42bb
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TIP31
Abstract: TIP31B TIP31C TIP32 TIP32A TIP32B TIP32C
Text: PANASONIC INDL/ELEK -CIO 12E D t, 1 3 2 0 5 2 I 001Q427 Silicon PNP Power Transistors 1 r-33-n TO-220 Package Absolute Maximum Ratings Ta=25°C Hem Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current
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r-33-n
O-220
tip32
tip32a
tip32b
tip32c
h-150
TIP31,
TIP31B,
TIP31C
TIP31
TIP31B
TIP31C
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2sc1061
Abstract: 2SC1626 2N6108
Text: Power Transistors TYPE POLA CASE NO. RITY U te min max Ic A V ce (V) max (V) fl COMPLE min MENTARY lc (A) (MHz) TYPE D45C12 MH0810 MH0816 MH0818 MH0870 P P P P P TO-220 TO-220 TO-220 TO-220 TO-220 30 12 10 10 30 4 3 1 1 4 80 30 60 80 50 20 40 40 40 40
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D45C12
MH0810
MH0816
MH0818
MH0870
MH8100
MH8106
MH8108
MH8500
MH8700
2sc1061
2SC1626
2N6108
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BUX98PI
Abstract: BUS08D T1P35C bux98p TP41A BUS08DFI BUF420AI Bo677A B0X54C BO677
Text: SELECTION GUIDE BY PACKAGE OPAK IPAK % DEVICE TYPE VcBO V ceO NPN PNP V MJD200T4 MJD3055T4 MJD31BT4 MJD44H11T4 STD909T4 IIJ m t2 T 4 MJD31CT4 «J012W 4 MJD47T4 MJ0340T4 MJD50T4 MJD210T4 MJD2955T4 MJD32BT4 MJ045H11T4 STD910T4 MJD32CT4 MJD127T4 MJD350T4 BULD118-1
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MJD200T4
MJD3055T4
MJD31BT4
MJD44H11T4
STD909T4
MJD31CT4
J012W
MJD47T4
MJ0340T4
MJD50T4
BUX98PI
BUS08D
T1P35C
bux98p
TP41A
BUS08DFI
BUF420AI
Bo677A
B0X54C
BO677
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TIp328
Abstract: TIP31 PNP Transistor T1P32A
Text: TIP32, TIP32A,TtP32B, TIP32C PNP SILICON POWER TRANSISTORS C o p y right 1997, Pow er Innovations Limited, U K • Designed tor Complementary Use with the TIP31 Series • 40 W at 25°C Case Temperature • 3 A Continuous Collector Current • 5 A Peak Collector Current
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TIP32,
TIP32A
TtP32B,
TIP32C
TIP31
O-220
TIP32
TIP32B
TIp328
TIP31 PNP Transistor
T1P32A
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T1P32B
Abstract: No abstract text available
Text: ^ 33- H Power Transistors TIP32, TIP32A, TIP32B, TIP32C HARRIS SEMICOND SECTOR File N um ber 27E D H 4302571 0050344 987 2 • HAS Epitaxial-Base, Silicon P-N-P VERSAWATT Transistors For Power-Am plifier and High-Speed-Switching Applications Fea tu re s: ■
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TIP32,
TIP32A,
TIP32B,
TIP32C
TIP32B.
TIP32C.
T1P32B
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2SD5703
Abstract: 2sd 209 l 2N6883 638s IC 638S T1P61 BD223 CX704 2n6125
Text: T- SEMICONDUCTORS INC OTE S | 813tUS0 0 D M 2 6 2 4 | S3 -fi Power Transistors •c D E V IC E M ax v CEO M ax A v hF E M in /M a x ?f l ç P O L A R IT Y v C E (sa t M ax fti Iq »T M in p D (M ax) T C =25°C W A V A M Hi PACK AGE 2N3054 2N3055 2N3055SD
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813tUS0
O-48D
2SD5703
2sd 209 l
2N6883
638s
IC 638S
T1P61
BD223
CX704
2n6125
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