G30N60
Abstract: TA49053 TA49172 TA49170 G30N60B3 G30N60B3D HGTG30N60B3D LD26 HGTG30N60b 200pulse
Text: HGTG30N60B3D Data Sheet April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Packaging JEDEC STYLE TO-247 The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a
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HGTG30N60B3D
O-247
HGTG30N60B3D
150oC.
TA49170.
TA49053.
G30N60
TA49053
TA49172
TA49170
G30N60B3
G30N60B3D
LD26
HGTG30N60b
200pulse
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g7n60b3d
Abstract: igbt g7n60b3d G7N60B3 HGT1S7N60B3DS HGT1S7N60B3DS9A HGTP7N60B3D RHRD660 2MH22 150OC
Text: HGTP7N60B3D, HGT1S7N60B3DS Data Sheet January 2000 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the
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HGTP7N60B3D,
HGT1S7N60B3DS
HGTP7N60B3D
HGT1S7N60B3DS
150oC
TA49190.
RHRD660
TA49057)
g7n60b3d
igbt g7n60b3d
G7N60B3
HGT1S7N60B3DS9A
RHRD660
2MH22
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G3N60C3
Abstract: G3N60 G3N60C3D HGT1S3N60C3DS HGT1S3N60C3DS9A HGTP3N60C3D
Text: HGTP3N60C3D, HGT1S3N60C3DS Data Sheet January 2000 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices
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HGTP3N60C3D,
HGT1S3N60C3DS
HGT1S3N60C3DS
150oC.
TA49113.
TA49055.
G3N60C3
G3N60
G3N60C3D
HGT1S3N60C3DS9A
HGTP3N60C3D
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HG20N60B3
Abstract: hG20N60 hg20n60b3 equivalent
Text: HGTG20N60B3 Data Sheet October 2004 40A, 600V, UFS Series N-Channel IGBTs Features The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state
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HGTG20N60B3
HGTG20N60B3
150oC.
HG20N60B3
hG20N60
hg20n60b3 equivalent
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RHRD660
Abstract: rhr660 rhr650 RHRD650 RHRD640S RHRD660S RHRD660S9A RHR640 RHRD640 RHRD650S
Text: S E M I C O N D U C T O R RHRD640, RHRD650, RHRD660, RHRD640S, RHRD650S, RHRD660S 6A, 400V - 600V Hyperfast Diodes April 1995 Features • • • • • Package Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . . . . . . . . <30ns Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
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RHRD640,
RHRD650,
RHRD660,
RHRD640S,
RHRD650S,
RHRD660S
175oC
O-251
O-252
RHRD660
rhr660
rhr650
RHRD650
RHRD640S
RHRD660S
RHRD660S9A
RHR640
RHRD640
RHRD650S
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G40N60B3
Abstract: No abstract text available
Text: HGTG40N60B3 Data Sheet November 2004 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
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HGTG40N60B3
HGTG40N60B3
150oC.
100ns
150oC
G40N60B3
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G40N60
Abstract: HGTG40N60B3 equivalent g40n60b g40n60b3 hgtg40n60b3 TA49052 LD26 RHRP3060 transistor* igbt 70A 300 V DSA003678
Text: HGTG40N60B3 Data Sheet December 2001 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
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HGTG40N60B3
HGTG40N60B3
150oC.
100ns
150oC
G40N60
HGTG40N60B3 equivalent
g40n60b
g40n60b3
TA49052
LD26
RHRP3060
transistor* igbt 70A 300 V
DSA003678
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RHRP860C
Abstract: RHRP840CC RHRP860CC
Text: RHRP840CC, RHRP860CC Data Sheet January 2000 File Number 3964.2 8A, 400V - 600V Hyperfast Dual Diodes Features The RHRP840CC and RHRP860CC are hyperfast dual diodes with soft recovery characteristics trr < 30ns . They have half the recovery time of ultrafast diodes and are of
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RHRP840CC,
RHRP860CC
RHRP840CC
RHRP860CC
RHRP860C
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1n120cnd
Abstract: HGT1S1N120CNDS HGT1S1N120CNDS9A HGTP1N120CND RHRD4120 TB334 1N120CN
Text: HGTP1N120CND, HGT1S1N120CNDS Data Sheet December 2001 6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120CND and the HGT1S1N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT
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HGTP1N120CND,
HGT1S1N120CNDS
HGTP1N120CND
HGT1S1N120CNDS
TA49317.
RHRD4120
TA49056)
1n120cnd
HGT1S1N120CNDS9A
RHRD4120
TB334
1N120CN
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HGTG5N120BND
Abstract: 5n120bnd 5n120 TA49058 mosfet 600v 10a to-220ab IC-2521 HGTP5N120BND RHRD6120 TA49308 TB334
Text: HGTG5N120BND, HGTP5N120BND Data Sheet May 2003 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BND and HGTP5N120BND are NonPunch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT
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HGTG5N120BND,
HGTP5N120BND
HGTG5N120BND
HGTP5N120BND
TA49308.
TA49058
RHRD6120)
5n120bnd
5n120
TA49058
mosfet 600v 10a to-220ab
IC-2521
RHRD6120
TA49308
TB334
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HGT1S2N120CNDS
Abstract: HGTP2N120CND HGT1S2N120CNDS9A RHRD4120 TB334 2N120CN
Text: HGTP2N120CND, HGT1S2N120CNDS Data Sheet December 2001 13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTP2N120CND and HGT1S2N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT
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HGTP2N120CND,
HGT1S2N120CNDS
HGTP2N120CND
HGT1S2N120CNDS
TA49313.
TA49056
RHRD4120)
HGT1S2N120CNDS9A
RHRD4120
TB334
2N120CN
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HG20N60B3
Abstract: Series 475 Rev-B3 hG20N60 hg20n60b3 equivalent 475 Rev-B3 HGTG20N60B3 LD26 RHRP3060 TB334 hg20n
Text: HGTG20N60B3 Data Sheet October 2004 40A, 600V, UFS Series N-Channel IGBTs Features The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state
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HGTG20N60B3
HGTG20N60B3
150oC.
TB334lopment.
HG20N60B3
Series 475 Rev-B3
hG20N60
hg20n60b3 equivalent
475 Rev-B3
LD26
RHRP3060
TB334
hg20n
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HR6120
Abstract: RHRD6120 RHRD6120S RHRD6120S9A TA49058
Text: RHRD6120, RHRD6120S Data Sheet Title HR 120, HRD 20S bt A, 00V pert odes utho eyrds terrpoon, minctor, ache ergy ted, itch wer pes, wer itch - January 2000 File Number 3981.1 6A, 1200V Hyperfast Diodes Features The RHRD6120 and RHRD6120S are hyperfast diodes with
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RHRD6120,
RHRD6120S
RHRD6120
RHRD6120S
HR6120
RHRD6120S9A
TA49058
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g30n60c3d
Abstract: G30N60 TA49053 TA49051 HGTG30N60C3D LD26 RHRP3060
Text: HGTG30N60C3D Data Sheet January 2009 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input
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HGTG30N60C3D
HGTG30N60C3D
150oC.
TA49051.
TA49053.
230ns
150oC
g30n60c3d
G30N60
TA49053
TA49051
LD26
RHRP3060
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5n120bnd
Abstract: mosfet 5N120bnd TA49306 5n120 HGT1S5N120BNDS HGTG5N120BND HGTP5N120BND RHRD6120 TA49058 TA49308
Text: HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Data Sheet January 2000 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high
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HGTG5N120BND,
HGTP5N120BND,
HGT1S5N120BNDS
HGTG5N120BN,
HGT1S5N120BNDS
TA49308.
TA49058
RHRD6120)
5n120bnd
mosfet 5N120bnd
TA49306
5n120
HGTG5N120BND
HGTP5N120BND
RHRD6120
TA49058
TA49308
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MCT thyristor
Abstract: MCT harris 3A65P100F2 IK25 THYRISTOR 35A 300V diode ik 60
Text: MCTV35P60F1D S E M I C O N D U C T O R April 1998 S DESIGN R NEW O F 2 F D E 35A, 600V ND P10 COMME CT3D65 NOT RE 3A65P100F2, M Thyristor MCT T See MC Features P-Type MOS Controlled with Anti-Parallel Diode Package • 35A, -600V JEDEC STYLE TO-247 • VTM = -1.35V (Max) at I = 35A and +150oC
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MCTV35P60F1D
O-247
CT3D65
3A65P100F2,
-600V
150oC
factor/100)
MCT thyristor
MCT harris
3A65P100F2
IK25
THYRISTOR 35A 300V
diode ik 60
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Untitled
Abstract: No abstract text available
Text: RHRP840, RHRP850, RHRP860 Semiconductor April 1995 File Number 3668.1 8A, 400V - 600V Hyperfast Diodes Features RHRP840, RHRP850 and RHRP860 TA49059 are hyper fast diodes with soft recovery characteristics (tp p < 30ns). They have half the recovery time of ultrafast diodes and are
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OCR Scan
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RHRP840,
RHRP850,
RHRP860
RHRP850
TA49059)
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RHR460
Abstract: No abstract text available
Text: RHRD440, RHRD450, RHRD460, RHRD440S, RHRD450S, RHRD460S Semiconductor April 1995 File Number 3613.4 4A, 400V - 600V Hyperfast Diodes Features RHRD440, RHRD450, RHRD460, RHRD440S, RHRD450S, and RHRD460S TA49055 are hyperfast diodes with soft recovery characteristics (tp p < 30ns). They have half the
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OCR Scan
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RHRD440,
RHRD450,
RHRD460,
RHRD440S,
RHRD450S,
RHRD460S
RHR460
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Untitled
Abstract: No abstract text available
Text: RHRD4120, RHRD4120S S em iconductor March 1997 File Number 3626.3 4A, 1200V Hyperfast Diodes Features RHRD4120 and RHRD4120S TA49056 are hyperfast diodes with soft recovery characteristics (tp p < 60ns). They have half the recovery time of ultrafast diodes and are silicon
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OCR Scan
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RHRD4120,
RHRD4120S
RHRD4120
TA49056)
and-------------400
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RHRP860C
Abstract: No abstract text available
Text: RHRP840CC, RHRP850CC, RHRP860CC S em iconductor April 1995 File Number 3964.1 8A, 400V - 600V Hyperfast Dual Diodes Features RHRP840CC, RHRP850CC and RHRP860CC TA49059 are hyperfast dual diodes with soft recovery characteristics (tRR < 30ns). They have half the recovery time of ultrafast
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OCR Scan
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RHRP840CC,
RHRP850CC,
RHRP860CC
RHRP850CC
TA49059)
RHRP860C
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PDF
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Untitled
Abstract: No abstract text available
Text: HGTP1N120BND, HGT1S1N120BNDS S e m iconductor D ata S h eet F eb ru ary 1999 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120BND and the HGT1S1N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT
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OCR Scan
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HGTP1N120BND,
HGT1S1N120BNDS
HGTP1N120BND
HGT1S1N120BNDS
TA49316.
RHRD4120
TA49056)
O-220AB
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HG20N60B3
Abstract: hG20N60 hg20n60b3 equivalent HG20N60B G20N60B3 hg*20n60 g20n60 vqe 24 d HGTG20N60B3 G20N60B
Text: interrii HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 J a n u a ry . m Data Sheet 40A, 600V, UFS Series N-Channel IGBTs The HGT1S20N60B3S, the HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs
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OCR Scan
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HGT1S20N60B3S,
HGTP20N60B3,
HGTG20N60B3
HGTP20N60B3
HGTG20N60B3
HG20N60B3
hG20N60
hg20n60b3 equivalent
HG20N60B
G20N60B3
hg*20n60
g20n60
vqe 24 d
G20N60B
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Untitled
Abstract: No abstract text available
Text: HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS H A R R IS semiconductor 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1996 Packaging Features JEDEC TO-220AB • 6A, 600V at Tc = +25°c EMITTER . 600V Switching SOA Capability • Typical Fall Time - 130ns at T j = +150°C
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OCR Scan
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HGTP3N60C3D,
HGT1S3N60C3D,
HGT1S3N60C3DS
O-220AB
130ns
O-262AA
1-800-4-HARRIS
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rhr660
Abstract: TA49057 RHRD660 RHRD660S RHRD660S9A UJ45
Text: RHRD660, RHRD660S in t e r r ii m i J a n u a ry . Data Sheet File Num ber 3746.3 6A, 600V Hyperfast Diodes Features The RHRD660 and RHRD660S are hyperfast diodes with soft recovery characteristics trr < 30ns . They have half the recovery time of ultrafast diodes and are silicon nitride
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OCR Scan
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RHRD660,
RHRD660S
RHRD660
RHRD660S
TA49057.
rhr660
TA49057
RHRD660S9A
UJ45
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