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    HG20N60B3

    Abstract: hG20N60 hg20n60b3 equivalent
    Text: HGTG20N60B3 Data Sheet October 2004 40A, 600V, UFS Series N-Channel IGBTs Features The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state


    Original     		PDF HGTG20N60B3 HGTG20N60B3 150oC. HG20N60B3 hG20N60 hg20n60b3 equivalent

    HG20N60B3

    Abstract: Series 475 Rev-B3 hG20N60 hg20n60b3 equivalent 475 Rev-B3 HGTG20N60B3 LD26 RHRP3060 TB334 hg20n
    Text: HGTG20N60B3 Data Sheet October 2004 40A, 600V, UFS Series N-Channel IGBTs Features The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state


    Original     		PDF HGTG20N60B3 HGTG20N60B3 150oC. TB334lopment. HG20N60B3 Series 475 Rev-B3 hG20N60 hg20n60b3 equivalent 475 Rev-B3 LD26 RHRP3060 TB334 hg20n

    HG20N60B3

    Abstract: hG20N60 HG20N60B hg20n60b3 equivalent TA49050 HGTG20N60B3 LD26 RHRP3060 TB334 hg20n
    Text: HGTG20N60B3 Data Sheet August 2003 40A, 600V, UFS Series N-Channel IGBTs Features The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state


    Original     		PDF HGTG20N60B3 HGTG20N60B3 150oC. TB334 HG20N60B3 hG20N60 HG20N60B hg20n60b3 equivalent TA49050 LD26 RHRP3060 hg20n

    HG20N60B3

    Abstract: hG20N60 G20N60B3 hg20n60b3 equivalent HG20N60B
    Text: HGTP20N60B3, HGTG20N60B3 S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBTs November 1997 Features Description • 40A, 600V at TC = 25oC The HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a


    Original     		PDF HGTP20N60B3, HGTG20N60B3 HGTP20N60B3 HGTG20N60B3 150oC. TA49050. 1-800-4-HARRIS HG20N60B3 hG20N60 G20N60B3 hg20n60b3 equivalent HG20N60B

    G20N60B3

    Abstract: G20N60 HGTG20N60B3 G20N60B HGTP20N60B3 LD26 RHRP3060 hg*20n60
    Text: HGTP20N60B3, HGTG20N60B3 S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBT February 1996 Features • • • • • Package JEDEC TO-220AB COLLECTOR EMITTER 40A, 600V at TC = +25oC Square Switching SOA Capability Typical Fall Time - 140ns at +150oC


    Original     		PDF HGTP20N60B3, HGTG20N60B3 O-220AB 140ns 150oC O-247 HGTP20N60B3 HGTG20N60B3 1-800-4-HARRIS G20N60B3 G20N60 G20N60B LD26 RHRP3060 hg*20n60

    G20N60B3

    Abstract: MOSFET 40A 600V HGTG20N60B3 HGTP20N60B3 LD26 RHRP3060 TA49050
    Text: HGTP20N60B3, HGTG20N60B3 S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBTs January 1997 Features • • • • • Package JEDEC TO-220AB COLLECTOR EMITTER 40A, 600V at TC = 25oC 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . . . . . . . 140ns at 150oC


    Original     		PDF HGTP20N60B3, HGTG20N60B3 O-220AB 140ns 150oC O-247 HGTP20N60B3 HGTG20N60B3 1-800-4-HARRIS G20N60B3 MOSFET 40A 600V LD26 RHRP3060 TA49050

    HG20N60B3

    Abstract: G20N60B3 hG20N60 HGT1S20N60B3S9A hg20n60b3 equivalent g20n60 HGTG20N60B3 MOSFET 40A 600V HGT1S20N60B3S HGTP20N60B3
    Text: HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBTs Features The HGT1S20N60B3S, the HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs


    Original     		PDF HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 HGTP20N60B3 HGTG20N60B3 150oC. HG20N60B3 G20N60B3 hG20N60 HGT1S20N60B3S9A hg20n60b3 equivalent g20n60 MOSFET 40A 600V HGT1S20N60B3S

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    HGTG20N60B3

    Abstract: HG20N60B3 hG20N60 hg20n60b3 equivalent HG20N60B G20N60B3 G20N60B g20n60 hg*20n60 hg20n
    Text: HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 Data Sheet January 2000 40A, 600V, UFS Series N-Channel IGBTs Features The HGT1S20N60B3S, the HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs


    Original     		PDF HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 HGTP20N60B3 HGTG20N60B3 150oC. HG20N60B3 hG20N60 hg20n60b3 equivalent HG20N60B G20N60B3 G20N60B g20n60 hg*20n60 hg20n

    HG20N60B3

    Abstract: hG20N60 hg20n60b3 equivalent g20n60b3 HG20N hg*20n60 TA49050 g20n60 MOSFET 40A 600V HGTG20N60B3
    Text: HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 Data Sheet January 2000 File Number 3723.6 40A, 600V, UFS Series N-Channel IGBTs Features The HGT1S20N60B3S, the HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs


    Original     		PDF HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 HGTP20N60B3 HGTG20N60B3 150oC. HG20N60B3 hG20N60 hg20n60b3 equivalent g20n60b3 HG20N hg*20n60 TA49050 g20n60 MOSFET 40A 600V

    HG20N60B3

    Abstract: hG20N60 hg20n60b3 equivalent HG20N60B G20N60B3 hg*20n60 g20n60 vqe 24 d HGTG20N60B3 G20N60B
    Text: interrii HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 J a n u a ry . m Data Sheet 40A, 600V, UFS Series N-Channel IGBTs The HGT1S20N60B3S, the HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs


    OCR Scan     		PDF HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 HGTP20N60B3 HGTG20N60B3 HG20N60B3 hG20N60 hg20n60b3 equivalent HG20N60B G20N60B3 hg*20n60 g20n60 vqe 24 d G20N60B

    PJ 969 diode

    Abstract: TA49050 pj 809 pj 986 diode
    Text: S E M I C O N D U C HGTP20N60B3 it: March1995 40A, 600V, UFS Series N-Channel IGBT Features Package • 40A, 600V at Tc = +25°C JEDEC TO-220AB • Square Switching SOA Capability • Typical Fall Time - 140ns at +150°C • Short Circuit Rated • Low Conduction Loss


    OCR Scan     		PDF HGTP20N60B3 O-220AB 140ns HGTP20N60B3 PJ 969 diode TA49050 pj 809 pj 986 diode